NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: reinforced epoxy film 5.0mils thick Primary Inductance 12mH ± 10% Leakage Inductance 10% of ... | Original |
4 pages, |
schematic diagram 12v power supply Epcos EE16/8/6 P/N B66307-G60-X1 1W 12V ZENER DIODE 36AWG EE16 12V 10w led driver zener 12V do-41 footprint zener 12v 1/4w EE16 bobbin DN-H02 EE16 core transformer DN-H02 abstract |
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| Abstract: z1071 (ATC 100B) 47pF Chip Capacitor (ATC100B ATC100B) 22pF Chip Capacitor (ATC100B ATC100B) Rogers 6006, r=6.15, 50mils ... | Original |
5 pages, |
0150SC-1250M Static Induction Transistor SIT 1000uf capacitor 700B electrolytic capacitor, 1uF SIT Static Induction Transistor sit transistor electrolytic capacitor, .1uF "Static Induction Transistor" atc100b "silicon carbide" FET 0150SC-1250M abstract |
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| Abstract: pin pitch of the package is 50-mils and the board area required is approximately half that of the , market. Both these packages have contacts or leads spaced at 50-mils. Both these packages use ... | Original |
4 pages, |
TQFP 100 PACKAGE footprint TQFP 100 footprint qsop 24 footprint millipaq footprint 24PIN DIP 24-Pin Plastic DIP datasheet abstract |
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| Abstract: 5.0mils 4.0mils 16.0mils 4.0mils 16.0mils 4.0mils 5.0mils 0.5mils SILKSCREEN ... | Original |
12 pages, |
AD8152 EVAL-AD8152EB AD8152 abstract |
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| Abstract: at 50mils. 2. · Pentium Socket-7TM, power planes and cooling as per Pentium Processor Flexible ... | Original |
3 pages, |
ide controller viper 82C578 82C576 74F244 pci pcb layout Socket7 datasheet abstract |
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| Abstract: Connectors 20 pins / 50mils connector Ref: Samtec no TMS-120-01-T-S-RA TMS-120-01-T-S-RA © 2000- Domosys Corporation ... | Original |
9 pages, |
EIA-600 DSIP-000-01B DOMOSYS D-DS-0500-02 EIA-600 abstract |
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| Abstract: : (1) maintaining wide traces for power components (e.g., width > 50mils); (2) place CIN, COUT, the ... | Original |
7 pages, |
MO229 MO-229 LX1911CLD LX1911 pmos high side switch LX1911 abstract |
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| Abstract: Lin = 45mils, BW = 10.6GHz 57 10000 Lin = 50mils, BW = 10.9GHz 56 1000 Input Current ... | Original |
12 pages, |
ATA7609D1 ATA7609 ATA7603 ALA7606 9.3GHz filter ATA7609 abstract |
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| Abstract: Performance or application designator 0805 The EIA size for length and width. (80mils x 50mils in this ... | Original |
3 pages, |
V18MLA0805L IEC-1000-4-2 AN9671 9445 AN9671 abstract |
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| Abstract: 10000 Lin = 50mils, BW = 10.9GHz 56 1000 Input Current (uApp) Lin = 55mils, BW = 11.1GHz ... | Original |
12 pages, |
ATA7603D1 ATA7603 ALA7606 9.3GHz filter ATA7603 abstract |
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| Abstract: Data Sheet No. 2C4029 2C4029 Generic Packaged Parts: Chip Type 2C4029 2C4029 Geometry 6700 Polarity PNP 2N4029 2N4029, 2N4033 2N4033 30 MILS B E 30 MILS Chip type 2C4029 2C4029 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N4029 2N4029, 2N4033 2N4033 Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitt ... | Original |
1 pages, |
transistor 2N4033 2N4029 2N4033 2C4029 2C4029 abstract |
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| Abstract: |t989963M[CENTRAL SEMICONDUCTOR i A / f-t'i-^.j-ctÈtîlgfciCL ©erp« Central™ Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788 92D 00341 P 7"-*?3 TE DE| nfl^tB DDDDB41 DDDDB41 4 CP103 CP103 SILICON NPN DARLINGTON POWER TRANSISTOR BONDING DIAGRAM PROCESS TOP SIDE METAL IZATION BACK SIDE METAL IZATION BASE BONDING PAD EMITTER BONDING PAD GLASS PASS IVATED MESA ALUMINUM NICKEL, CHROME, SILVER 35 x 50 MILS 39 x MILS This Material Copyrighted By Its Respective Manufacturer ... | OCR Scan |
1 pages, |
CP103 DDDDB41 DDDDB41 abstract |
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| Abstract: Central PROCESS TM CP215 CP215 Small Signal Transistors Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 21 x 21 MILS DIE THICKNESS 9.0 MILS BASE BONDING PAD AREA 4.3 x 4.3 MILS EMITTER BONDING PAD AREA 5.0 x 5.0 MILS TOP SIDE METALIZATION Al - 15,000Ã... BACK SIDE METALIZATION Au - 10,000Ã... GEOMETRY B PRINCIPAL DEVICE TYPES 2N3725 2N3725 2N3725A 2N3725A MPQ3725 MPQ3725 MPQ3725A MPQ3725A E BACKSIDE CO ... | Original |
1 pages, |
MPQ3725A MPQ3725 CP215 2N3725A 2N3725 transistor 2N3725 datasheet abstract |
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| Abstract: Data Sheet No. 2C3501 2C3501 Generic Packaged Parts: Chip Type 2C3501 2C3501 Geometry 5620 Polarity NPN 2N3498 2N3498, 2N3499 2N3499, 2N3500 2N3500, 2N3501 2N3501 Chip type 2C3501 2C3501 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for switching and amplifier applications. Part Numbers: 2N3498 2N3498, 2N3498L 2N3498L, 2N3499 2N3499, 2N3499L 2N3499L, 2N3500 2N3500, 2N3500L 2N3500L, 2N3501 2N3501, 2N3501L 2N3501L Features: Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter ... | Original |
1 pages, |
2N3501L 2N3501 2N3500L 2N3500 2N3499L 2N3499 2N3498L 2N3498 2C3501 2C3501 abstract |
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| Abstract: 1989963 CENTRAL SEMICONDUCTOR f.-C .-v-r.'l-V- miüiWri Centralâ„¢ Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788 92D 00341 D 7~-13 TS DE(nflnt3 â-¡â-¡00341 4 CP103 CP103 SILICON NPN DARLINGTON POWER TRANSISTOR BONDING DIAGRAM PROCESS: TOP SIDE METAL IZATI ON: BACK SIDE METAL IZATION: BASE BONDING PAD: EMITTER BONDING PAD: GLASS PASSIVATED MESA ALUMINUM NICKEL, CHROME, SILVER 35 x 50 MILS 39 x 5b MILS i'.vl / MM m^^mm SlMlifS -1 'M-5 if - I.; iï'is m > I -T rs E ... | OCR Scan |
1 pages, |
CP103 datasheet abstract |
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| Abstract: PROCESS CPD16 CPD16 Ultra Fast Rectifier 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Ã... Back Side Metalization Au - 2,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES UES1001 UES1001 thru UES1003 UES1003 UF4001 UF4001 thru UF4007 UF4007 CMR1U-01 CMR1U-01 Series CMR1U-01M CMR1U-01M Series BACKSIDE CATHODE 145 Adams Ave ... | Original |
2 pages, |
UES1003 UES1001 diode uf4007 CPD16 CMR1U-01M CMR1U-01 uf4007 diode data sheet UF4007 CPD16 abstract |
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| Abstract: PROCESS CPD24 CPD24 Central Fast Recovery Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Ã... Back Side Metalization Au - 2,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES 1N4933 1N4933 thru 1N4937 1N4937 1N4942 1N4942 thru 1N4948 1N4948 1N5615 1N5615 thru 1N5623 1N5623 CMR1F-0 ... | Original |
1 pages, |
CPD24 CMR1F-02M 1N5623 1N5615 1N4948 1N4942 1N4937 1N4933 CPD24 abstract |
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| Abstract: PROCESS CPD05 CPD05 Central General Purpose Rectifier TM Semiconductor Corp. 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Ã... Back Side Metalization Au - 2,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES 1N3611 1N3611 thru 1N3614 1N3614 1N4001 1N4001 thru 1N4007 1N4007 1N4245 1N4245 thru 1N4249 1N4249 1N5059 1N5059 ... | Original |
2 pages, |
CPD05 1N3614 1N4001 1N4007 details 1N4245 1N4249 1N5059 1N5062 1n5062 equivalent 1N5391 1N5399 1N3611 1N4007 CPD05 abstract |
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| Abstract: PROCESS CPD24 CPD24 Fast Recovery Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 11 MILS Anode Bonding Pad Area 35 x 35 MILS Top Side Metalization Ni/Au - 5,000Ã.../2,000Ã... Back Side Metalization Ni/Au - 5,000Ã.../2,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,250 PRINCIPAL DEVICE TYPES 1N4933 1N4933 thru 1N4937 1N4937 1N4942 1N4942 thru 1N4948 1N4948 1N5615 1N5615 thru 1N5623 1N5623 CMR1F-02M CMR1F-02M Series BACKSIDE CATHO ... | Original |
2 pages, |
CPD24 CMR1F-02M 1N5623 1N5615 1N4948 1N4942 1N4937 1N4933 CPD24 abstract |
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| Abstract: PROCESS CPD05 CPD05 General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Ã... Back Side Metalization Au - 2,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES 1N3611 1N3611 thru 1N3614 1N3614 1N4001 1N4001 thru 1N4007 1N4007 1N4245 1N4245 thru 1N4249 1N4249 1N5059 1N5059 thru 1N5062 1N5062 1N5391 1N5391 thru 1N5399 1N5399 1N5614 1N5614 t ... | Original |
2 pages, |
1N3611 1N3614 1N4001 1N4007 1N4245 1N4249 1N5059 1N5062 1N5391 1N5399 CPD05 diode 1n5059 equivalent components of diode 1N4249 free download datasheet 1N4007 1n5062 equivalent CPD05 abstract |
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| ) 1.27mm Pitch (50 MIL) OKIFLEX-B Type (300V, 105°C) 1.27mm Pitch (50 MIL) OKIFLEX-TP Type (Twisted Pair, 150V, 80°C) 1.27mm Pitch (50 MIL) OKIFLEX-FS Type (shielded, 150V, 60°C) 1.27mm Pitch (50 MIL) OKIFLEX-S Type (Bonded-Unbonded, 300V, 105°C -Unbonded, 150V, 80°C) 1.27mm Pitch (50 MIL) Round-Flat / TP Type www.datasheetarchive.com/files/yamaichi/cc/cables/c_main.htm |
Yamaichi | 15/10/1998 | 8.65 Kb | HTM | c_main.htm |
| Technical Details 50MIL (1.27mm) OKIFLEX-TP Type (150V, 80° C) 10 to 64 Technical Details 50MIL (1.27mm 50MIL (1.27mm) OKIFLEX-S Type (300V, 105° C) 10 to 64 Technical 50MIL (1.27mm) OKIFLEX-SFX Type (150V, 80° C) 8 to 64 Technical Technical Details AWG 28, 50MIL (1.27mm) Multi Pair Cable-I (300 www.datasheetarchive.com/files/yamaichi/cables/cables_serie.htm |
Yamaichi | 28/10/2003 | 15.01 Kb | HTM | cables_serie.htm |
| Cables - Flat with round jacket Okiflex-sfx 50MIL Click on Data Sheet for further information about: -Part Number Details -Dimensions Full Title: 50MIL (1.27mm)OKIFLEX-SFX (150V, 80°C Flat 50MIL (1.27mm) Cable formed in an Â'SÂ' shape within www.datasheetarchive.com/files/yamaichi/cables/cables/spec/d10-sfx-s.htm |
Yamaichi | 02/07/2001 | 12.91 Kb | HTM | d10-sfx-s.htm |
| SO SOIC, 300-mil 50 mils S1 SOIC, 150-mil 50 mils -line Package 50 mils QF Qual Flat Pack 0.5, 0.8mm Quad Flat Pack 0.5mm J Plastic PLCC, square 50 mils JR Plastic PLCC, rectangular 50 mils General Information www.datasheetarchive.com/files/idt/docs/wcd00014/wcd0145d.htm |
IDT | 06/01/2000 | 14.7 Kb | HTM | wcd0145d.htm |
| SO SOIC, 300-mil 50 mils S1 SOIC, 150-mil 50 mils -line Package 50 mils QF Qual Flat Pack 0.5, 0.8mm Quad Flat Pack 0.5mm J Plastic PLCC, square 50 mils JR Plastic PLCC, rectangular 50 mils General Information www.datasheetarchive.com/files/idt/docs/wcd00002/wcd002cd-v1.htm |
IDT | 30/06/1999 | 15.35 Kb | HTM | wcd002cd-v1.htm |
| Title: 50MIL 50MIL (1.27mm) OKIFLEX-FS Type (150V, 60°C Flat 50MIL (1.27mm) Cable, jacketed and shielded www.datasheetarchive.com/files/yamaichi/cables/cables/spec/d08-fs-flex-b.htm |
Yamaichi | 02/07/2001 | 12.5 Kb | HTM | d08-fs-flex-b.htm |
| PACKAGE 1.27mm (50mil) 2-direction M Standard 2-direction chip GFJ (PLCC) QUAD FLAT J-LEADED PACKAGE 1.27mm (50mil) J-Lead 4 P 1.27mm (50mil) Array Leadless Ball Package bottom GB www.datasheetarchive.com/files/sony/dataseet/package.html |
Sony | 30/10/1998 | 9.61 Kb | HTML | package.html |
| ´t Title: 50MIL (1.27mm) Round-Flat / TP Type (150V, 80°C Twisted and flat 50MIL (1.27mm) cable formed in a round www.datasheetarchive.com/files/yamaichi/cables/cables/spec/d11-tpflex-n.htm |
Yamaichi | 02/07/2001 | 11.66 Kb | HTM | d11-tpflex-n.htm |
| Title: 50MIL (1.27mm) Multi Pair Cable-II (30V, 60°C Bonded 50MIL (1.27mm) flat ends accept IDC connectors www.datasheetarchive.com/files/yamaichi/cables/cables/spec/d14-hrv21.htm |
Yamaichi | 02/07/2001 | 12.36 Kb | HTM | d14-hrv21.htm |
| Title: 50MIL (1.27mm) Multi Pair Cable-I (300V, 80°C Bonded 50MIL flat ends accept IDC connectors www.datasheetarchive.com/files/yamaichi/cables/cables/spec/d13-hrv25.htm |
Yamaichi | 02/07/2001 | 12.72 Kb | HTM | d13-hrv25.htm |