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50mils

Catalog Datasheet Results Type PDF Document Tags
Abstract: -Terminals: Wire lead Ø 50mils. 0.220(5.60) 0.180(4.60) 0.052(1.30)DIA. 0.048(1.20)TYP. 1.134(28.80) 1.114 ... Original
datasheet

3 pages,
50.42 Kb

BR5010l BR5005L-G BR5010L-G BR5005L-G abstract
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Abstract: reinforced epoxy film 5.0mils thick Primary Inductance 12mH ± 10% Leakage Inductance 10% of ... Original
datasheet

4 pages,
350.75 Kb

converter 12-35 10w led driver zener 12V zener 12v 1/4w do-41 footprint EE16 bobbin schematic diagram 12v power supply DN-H02 core ee16 transformer schematic EE16 core transformer HV9922 video isolation transformer cap 100uf 16v DN-H02 abstract
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Abstract: ) 47pF Chip Capacitor (ATC100B ATC100B) 22pF Chip Capacitor (ATC100B ATC100B) Rogers 6006, r=6.15, 50mils, 1oz 7 Turns ... Original
datasheet

5 pages,
266.1 Kb

silicon carbide 0150SC-1250M 0150SC-1250M abstract
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Abstract: z1071 (ATC 100B) 47pF Chip Capacitor (ATC100B ATC100B) 22pF Chip Capacitor (ATC100B ATC100B) Rogers 6006, r=6.15, 50mils ... Original
datasheet

5 pages,
309.94 Kb

0150SC-1250M Static Induction Transistor SIT 1000uf capacitor 700B silicon carbide electrolytic capacitor, 1uF SIT Static Induction Transistor sit transistor "Static Induction Transistor" atc100b "silicon carbide" FET electrolytic capacitor, .1uF 0150SC-1250M abstract
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Abstract: pin pitch of the package is 50-mils and the board area required is approximately half that of the , market. Both these packages have contacts or leads spaced at 50-mils. Both these packages use ... Original
datasheet

4 pages,
16.58 Kb

TQFP 100 PACKAGE footprint TQFP 100 footprint qsop 24 footprint qfp 25mils footprint 24PIN DIP 24-Pin Plastic DIP millipaq datasheet abstract
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Abstract: 5.0mils 4.0mils 16.0mils 4.0mils 16.0mils 4.0mils 5.0mils 0.5mils SILKSCREEN ... Original
datasheet

12 pages,
745.1 Kb

AD8152 EVAL-AD8152EB AD8152 abstract
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Abstract: at 50mils. 2. · Pentium Socket-7TM, power planes and cooling as per Pentium Processor Flexible ... Original
datasheet

3 pages,
53.24 Kb

opti ide controller viper 82C578 82C576 74F244 pci pcb layout Socket7 datasheet abstract
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Abstract: Connectors 20 pins / 50mils connector Ref: Samtec no TMS-120-01-T-S-RA TMS-120-01-T-S-RA © 2000- Domosys Corporation ... Original
datasheet

9 pages,
179.73 Kb

DSIP-000-01B CEWay CEBus EIA-600 DOMOSYS D-DS-0500-02 EIA-600 abstract
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Abstract: 48mils x 50mils 406µm Nominal 288µm Nominal 110µm x 110µm ALUMINUM VOM NITRIDE BARE BACK Floating ... Original
datasheet

23 pages,
824.84 Kb

texas instruments circuit diagram 1980 Audio Handbook 3 band Graphic Equalizer LM833 balanced input riaa ic op 5218 Texas Instruments amp diagram riaa LM833 audio power amplifier lm833 operating conditions LM833 data 10 Band Graphic Equalizer LM833AMX LM833 LM833 LM833 abstract
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Abstract: horizontally mounted on 25-mil thick alumina microstrip substrates (50-mils for 650F), 24-mil-wide traces (48 ... Original
datasheet

8 pages,
1259.55 Kb

ATC 25V 0603 CAPACITOR 650s 650L datasheet abstract
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Abstract: Data Sheet No. 2C3762 2C3762 Chip Type 2C3762 2C3762 Geometry 6706 Polarity PNP Generic Packaged Parts: 2N3467 2N3467, 2N3467L 2N3467L, 2N3468 2N3468, 2N3468L 2N3468L, 2N3762 2N3762, 2N3762L 2N3762L, 2N3763 2N3763, 2N3763L 2N3763L, 2N3764 2N3764, 2N3765 2N3765 B E 30 MILS 30 MILS Chip type 2C3762 2C3762 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available 2N3467 2N3467, 2N3467L 2N3467L, 2N3468 2N3468, 2N3468L 2N3468L, 2N3762 2N3762, 2N ... Original
datasheet

1 pages,
35.34 Kb

2C3762 2N3467 2N3467L 2N3468 2N3468L 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 2C3762 abstract
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Abstract: Data Sheet No. 2C4029 2C4029 Generic Packaged Parts: Chip Type 2C4029 2C4029 Geometry 6700 Polarity PNP 2N4029 2N4029, 2N4033 2N4033 30 MILS B E 30 MILS Chip type 2C4029 2C4029 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N4029 2N4029, 2N4033 2N4033 Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitt ... Original
datasheet

1 pages,
30.96 Kb

transistor 2N4033 2N4029 2N4033 2C4029 2C4029 abstract
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Abstract: |t989963M[CENTRAL SEMICONDUCTOR i A / f-t'i-^.j-ctÈtîlgfciCL ©erp« Central™ Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788 92D 00341 P 7"-*?3 TE DE| nfl^tB DDDDB41 DDDDB41 4 CP103 CP103 SILICON NPN DARLINGTON POWER TRANSISTOR BONDING DIAGRAM PROCESS TOP SIDE METAL IZATION BACK SIDE METAL IZATION BASE BONDING PAD EMITTER BONDING PAD GLASS PASS IVATED MESA ALUMINUM NICKEL, CHROME, SILVER 35 x 50 MILS 39 x MILS This Material Copyrighted By Its Respective Manufacturer ... OCR Scan
datasheet

1 pages,
58.42 Kb

CP103 QQ963 QQ963 abstract
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Abstract: Packaging Availability A M I AMERICAN MICROSYSTEMS, INC. August 1996 AMI offers you space-saving and cost-effective packages and package processes spanning a broad spectrum of capabilities. AMI can meet your package requirements in a variety of ways. You can choose from ten basic package PACKAGE TYPE LEAD SHAPE LEAD ... OCR Scan
datasheet

3 pages,
87 Kb

datasheet abstract
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Abstract: Central PROCESS TM CP215 CP215 Small Signal Transistors Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 21 x 21 MILS DIE THICKNESS 9.0 MILS BASE BONDING PAD AREA 4.3 x 4.3 MILS EMITTER BONDING PAD AREA 5.0 x 5.0 MILS TOP SIDE METALIZATION Al - 15,000... BACK SIDE METALIZATION Au - 10,000... GEOMETRY B PRINCIPAL DEVICE TYPES 2N3725 2N3725 2N3725A 2N3725A MPQ3725 MPQ3725 MPQ3725A MPQ3725A E BACKSIDE CO ... Original
datasheet

1 pages,
55.42 Kb

MPQ3725A MPQ3725 CP215 2N3725A 2N3725 transistor 2N3725 datasheet abstract
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Abstract: Data Sheet No. 2C3501 2C3501 Generic Packaged Parts: Chip Type 2C3501 2C3501 Geometry 5620 Polarity NPN 2N3498 2N3498, 2N3499 2N3499, 2N3500 2N3500, 2N3501 2N3501 Chip type 2C3501 2C3501 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for switching and amplifier applications. Part Numbers: 2N3498 2N3498, 2N3498L 2N3498L, 2N3499 2N3499, 2N3499L 2N3499L, 2N3500 2N3500, 2N3500L 2N3500L, 2N3501 2N3501, 2N3501L 2N3501L Features: Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter ... Original
datasheet

1 pages,
30.62 Kb

2N3501L 2N3501 2N3500L 2N3500 2N3499L 2N3499 2N3498L 2N3498 2C3501 2C3501 abstract
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Abstract: PROCESS CPD05 CPD05 Central General Purpose Rectifier TM Semiconductor Corp. 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000... Back Side Metalization Au - 2,000... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES 1N3611 1N3611 thru 1N3614 1N3614 1N4001 1N4001 thru 1N4007 1N4007 1N4245 1N4245 thru 1N4249 1N4249 1N5059 1N5059 ... Original
datasheet

2 pages,
211.82 Kb

CPD05 1N3614 1N4001 1N4007 details 1N4245 1N4249 1N5059 1N5062 1n5062 equivalent 1N5391 1N5399 1N3611 1N4007 CPD05 abstract
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Abstract: 1989963 CENTRAL SEMICONDUCTOR f.-C .-v-r.'l-V- miüiWri Central™ Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788 92D 00341 D 7~-13 TS DE(nflnt3 --00341 4 CP103 CP103 SILICON NPN DARLINGTON POWER TRANSISTOR BONDING DIAGRAM PROCESS: TOP SIDE METAL IZATI ON: BACK SIDE METAL IZATION: BASE BONDING PAD: EMITTER BONDING PAD: GLASS PASSIVATED MESA ALUMINUM NICKEL, CHROME, SILVER 35 x 50 MILS 39 x 5b MILS i'.vl / MM m^^mm SlMlifS -1 'M-5 if - I.; iï'is m > I -T rs E ... OCR Scan
datasheet

1 pages,
57.91 Kb

CP103 datasheet abstract
datasheet frame
Abstract: PROCESS CPD16 CPD16 Ultra Fast Rectifier 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000... Back Side Metalization Au - 2,000... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES UES1001 UES1001 thru UES1003 UES1003 UF4001 UF4001 thru UF4007 UF4007 CMR1U-01 CMR1U-01 Series CMR1U-01M CMR1U-01M Series BACKSIDE CATHODE 145 Adams Ave ... Original
datasheet

2 pages,
254.95 Kb

UES1003 UES1001 diode uf4007 CPD16 CMR1U-01M CMR1U-01 uf4007 diode data sheet UF4007 CPD16 abstract
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Abstract: PROCESS CPD05 CPD05 General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000... Back Side Metalization Au - 2,000... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES 1N3611 1N3611 thru 1N3614 1N3614 1N4001 1N4001 thru 1N4007 1N4007 1N4245 1N4245 thru 1N4249 1N4249 1N5059 1N5059 thru 1N5062 1N5062 1N5391 1N5391 thru 1N5399 1N5399 1N5614 1N5614 t ... Original
datasheet

2 pages,
264.82 Kb

1N3611 1N3614 1N4001 1N4007 1N4245 1N4249 1N5059 1N5062 1N5391 1N5399 CPD05 diode 1n5059 equivalent components of diode 1N4249 free download datasheet 1N4007 1n5062 equivalent CPD05 abstract
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#FILE = EDWIN2000 EDWIN2000 EDWIN2000 EDWIN2000.EXE 'EDWin 2000 Main' 101 ~ EDWinについて(&A)~ &About EDWin 102 ~ アパーチャ(&A).~ &Apertures 103 ~ スタートアプリケーション(&A).~ &Applications 104 ~ バックアップ(&B).~ &Backup 105 ~ 回路図設計(&C)~ &Capture 106 ~ 回路記号(&C)~ &Comp.Name 107 ~ コンダクター(&C).~ &Conductors 108 ~ デフォルトの設定と-て保存-ない(&C)~ &Current 109 ~ ASCIIプロジェクトの保存(&D).~ &Database ASCII Save 1010 ~ データベース...報(&D)~ &Database Info 1011 ~ デフォルトの設定と-て保存(&D)~ &Default 1012 ~ ディレクトリ(&D).~ &Directories 1013 ~ &EDSpiceシミュレ
www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/country/japanese/e2klocal.txt
Kaleidoscope 29/04/2003 507.34 Kb TXT e2klocal.txt