NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS(on)= N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 trr 300 ns PLUS 264TM 264TM (IXFB) Symbol Test Conditions VDSS VDGR TJ = 25癈 to 150癈 TJ = 25癈 to 150癈; RGS = 1 M 800 800 V V VGS VGSM Continuous Transient � � V V ID25 IDM IAR TC = 25癈 TC = 25癈, pulse width limited by TJM TC = 25癈 50 ... | Original |
2 pages, |
IXFB50N80Q2 50N80Q2 264TM 50N80Q2 abstract |
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| Abstract: conditions, and dimensions. IXYS REF:F_50N80Q2(95)10-11-07-A ... | Original |
4 pages, |
IXFB50N80Q2 50N80Q2 50n80 IXFB50N80Q2 abstract |
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| Abstract: , Test Conditions, and Dimensions. IXYS REF:F_50N80Q2(95)1-18-10-C 1-18-10-C ... | Original |
4 pages, |
IXFB50N80Q2 50N80Q2 IXFB50N80Q2 abstract |
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| Abstract: REF:F_50N80Q2(95)1-18-10-C 1-18-10-C ... | Original |
4 pages, |
50N80Q2 IXFN50N80Q2 IXFN50N80Q2 abstract |
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| Abstract: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS(on)= N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 trr 300 ns PLUS 264TM 264TM (IXFB) Symbol Test Conditions VDSS VDGR TJ = 25癈 to 150癈 TJ = 25癈 to 150癈; RGS = 1 M 800 800 V V VGS VGSM Continuous Transient � � V V ID25 IDM IAR TC = 25癈 TC = 25癈, pulse width limited by TJM TC = 25癈 50 ... | Original |
4 pages, |
IXFB50N80Q2 IXFB 50N80Q2 50n80 50N80Q2 50N80Q2 abstract |
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| Abstract: HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS(on)= N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 trr 300 ns PLUS 264TM 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25癈 to 150癈 TJ = 25癈 to 150癈; RGS = 1 M 800 800 V V VGS VGSM Continuous Transient � � V V ID25 IDM IAR TC = 25癈 TC = 25癈, pulse width limited by TJM TC = 25癈 50 200 50 A A A EAR ... | Original |
4 pages, |
IXFB50N80Q2 50N80Q2 IXFB 50N80Q2 abstract |
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| Abstract: : F_50N80Q2(95)5-27-08-B 5-27-08-B ... | Original |
4 pages, |
ixfn50n80q2 50N80Q2 IXFN50N80Q2 IXFN50N80Q2 abstract |
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| Abstract: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS(on)= N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 trr 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 E153432 Symbol Test Conditions S Maximum Ratings G VDSS VDGR TJ = 25癈 to 150癈 TJ = 25癈 to 150癈; RGS = 1 M 800 800 V V VGS VGSM Continuous Transient � � V V ID25 IDM IAR TC = 25癈 TC = 25癈, pulse width limited by TJM TC ... | Original |
4 pages, |
IXFN50N80Q2 50N80Q2 50n80 50N80Q2 abstract |
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| Abstract: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS(on)= N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV /t Low trr d, 800 V 50 A 0.15 trr 300 ns miniBLOC, SOT-227 B (IXFN) E153432 E153432 Symbol Test Conditions Maximum Ratings S G VDSS VDGR TJ = 25癈 to 150癈 TJ = 25癈 to 150癈; RGS = 1 M 800 800 V V VGS VGSM Continuous Transient � � V V ID25 IDM IAR TC = 25癈 TC = 25癈, pulse width limited by TJM TC = 25癈 ... | Original |
4 pages, |
IXFN50N80Q2 50N80Q2 50N80Q2 abstract |
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| Abstract: R1446NS12C R1271NS12 SW22CXC14C N600SH16 SW06CXC19C r1275ns20l R1271ns12C IXFB 38N100Q2 38N100Q2 Ø IXFB 40N110P 40N110P Ø IXFB 44N100P 44N100P IXFB 50N80Q2 IXFB 60N80P 60N80P IXFB 70N60Q2 70N60Q2 IXFB 80N50Q2 80N50Q2 , IXFN 50N80Q2 IXFN 60N80P 60N80P IXFN 64N50P 64N50P 104 104 104 104 104 99 104 106 109 110 109 107 ... | Original |
288 pages, |
Westcode SW22cxc14c vub 70-12 48N60 vub 70-16 60n30 IXDD 614 10M45 C 547 B W57 BJT transistor 10N60C 18N50 equivalent MOSFET smd 4407 7N60B equivalent datasheet abstract |
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