50KRAD
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Abstract: two tests (biased and unbiased) were less than the LTC data sheet limits of 20krad(Si) at the 50krad , =10mA: The PostRadiation limit at 50krad(Si) was 1.225V maximum. The parameter minimum was 1.275V. The , PostRadiation limit at 50krad(Si) was 1.225V maximum. The parameter minimum was 1.275V. The maximum voltage , limit at 50krad(Si) was 1.200V maximum. The parameter minimum was 1.300V. The maximum voltage was , at 50krad(Si) was 1.200V maximum. The parameter minimum was 1.300V. The maximum voltage was 
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RH137H QML38534 0709A LTS2020 smd code marking 40E LTS2020 LTS2101 649E03 VRG8661S 59620920602KXC RH137 SCD8661 RH137K 
Abstract: data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was 
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VRG8602S 59620521901KYC 59620521904KYA 474E01 LTS0606 A2151 43e smd code smd diode marking code TO3 VRG8601S 59620521901KXC RH117 SCD8601 
Abstract: data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was 
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RH117H RH117K VRG86602011S MIL 72E 957a 2881E HT 12E APPLICATION VRG8660S 59620920601KXC SCD8660 VRG8660 
Abstract: two tests (biased and unbiased) were less than the LTC data sheet limits of 20krad(Si) at the 50krad , =10mA: The PostRadiation limit at 50krad(Si) was 1.225V maximum. The parameter minimum was 1.275V. The , PostRadiation limit at 50krad(Si) was 1.225V maximum. The parameter minimum was 1.275V. The maximum voltage , limit at 50krad(Si) was 1.200V maximum. The parameter minimum was 1.300V. The maximum voltage was , at 50krad(Si) was 1.200V maximum. The parameter minimum was 1.300V. The maximum voltage was 
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VRG8610S power 22E analog smd 37e power 22E Aeroflex Microelectronic Solutions 46E SMD CODE 236E01 VRG8609S 59620521904KXC 59620521904KYC SCD8609 VRG8609/10 
Abstract: data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was 
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Power Supply Control IC dap 07 smd 340E01 smd 43e 132E02 rad hard Negative voltage regulators mev rh117 VRG8607S VRG8608S 59620521903KXC 59620521903KYC SCD8607 VRG8607/08 
Abstract: specifically conducted to demonstrate LDR performance to support offering the 50krad(Si) LDR assurance tested , rad(Si)/s. Only the IS139ASEH is waferbywafer assurance tested at 50krad(Si) LDR (0.01 rad(Si)/s). LDR characterization beyond 50krad(Si) is included as indicative, but no assurance testing beyond 50krad(Si) LDR is performed in production of the "EH" part. â'¢ DLA Standard Microcircuit Drawing SMD , . . . . . . . . . .50krad(Si) â'¢ Single event latchup immunity . . . . . . . . .>84MeV*cm2/mg â 
Intersil Original 

IS139ASRH MILSTD883H AN1821 
Abstract: 300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s), insuring hardness to the specified , variant), with four output voltage options selected through Low dose rate (0.01rad(Si)/s) 50krad(Si , 0 8 0 Preirradiation 8 8 0 50krad(Si) 8 0 100krad(Si) 8 0 , 150krad(Si) Grounded 8 100krad(Si) HDR 8 50krad(Si) 3.3 Preirradiation 30krad(Si) ISL71091SEH33 8 5 150krad(Si) Biased 5 100krad(Si) HDR Preirradiation 50krad(Si 
Intersil Original 

ISL71091SEH ISL71091SEH20 ISL71091SEH40 ISL71091SEH10 AN1939 
Abstract: (Si) at high dose rate (50  300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s). , the low dose rate tests are 0, 10, 30 and 50krad(Si); this test will be extended to 100krad(Si , tolerance, low dose rate . . . . . . . . . . . . .50krad(Si) â'¢ QML qualified per MILPRF38535 â , , 30 and 50krad(Si); this test will be extended to 100krad(Si), 150krad(Si) and the 168hour biased , (Note 1) FAIL 5 10krad(Si) 5 0 30krad(Si) 5 0 50krad(Si) 5 0 100krad 
Intersil Original 

ISL71590SEH CY2014 AN1895 
Abstract: parametric limits after 50krad(Si) TID, as indicated in the Electrical Specification tables of this application note. Please note, however, that the post50krad electrical specifications shown herein are not , can be extended up to 50krad(Si). R2 R1 U1 INA OE VS OUTA INB R1 VS+ OUTB , Conclusions A simple method to extend the TID capability of the ISL7457SRH to 50krad(Si) has been described , = +25°C, Post 50krad(Si) unless otherwise specified. Refer to Figure 2 for radiation exposure 
Intersil Original 

AN1458 596208230 a 1458 smd IC UA 1458 ISL7457 
Abstract: and low dose rate tests. The biased low dose rate samples were run successfully to 50krad(Si) but all , under biased and unbiased conditions. The biased low dose rate samples were run successfully to 50krad , rate samples passed the SMD criteria at the 50krad(Si) downpoint. All high dose rate samples passed , effectively proceeded to 50krad(Si) while the other three tests were run out to 150krad(Si). The , at all downpoints, with the biased low dose rate data truncated at 50krad(Si). The plots show the 
Intersil Original 

IS2100ARH MILSTD883G 
Abstract: , radiation hardening up to 50krad(Si) (RHA level R) is met by utilizing swept quartz and active device types , number, are designed to withstand 50krad(Si) ELDRS based on previous similar device tests results , Pedigree (choose one as the 5th character in the part number): (E) Enhanced Element Evaluation, 50krad Class S die, Premium Q Swept Quartz (R) HiRel design w/ 50krad Class S die, Premium Q Swept Quartz (V) HiRel design w/ 50krad Class S die, Cultured Quartz (X) HiRel design w/ Cultured Quartz, Class S die 
Vectron International Original 

CO22326 DOC203810 CO21399 DOC203982 AS9100 MILHDBK1547 
Abstract: )/s). Only the HS1825AEH is acceptance tested on a waferbywafer basis to 50krad(Si) at low dose rate (0.01 rad(Si)/s). The LDR performance characterization beyond the 50krad(Si) assurance level is included in this report as indicative, but no assurance testing beyond 50krad(Si) is performed at LDR in , radiation limits at the 50krad(Si) low dose rate assurance level. The current limit (VLIMIT) and , maintaining specified operation up to the 50krad(Si) level of radiation assurance testing for the "EH" 
Intersil Original 

HS1825ARH AN1823 
Abstract: hardening up to 50krad (Si) (RHA level L) is met by utilizing swept quartz and active device lots that have , number, are certified for 50krad (Si) ELDRS. 4.1.3.1 Class B Active Devices. When specified, active , 5th character in the part number): (E) Enhanced Element Evaluation, 50krad Class S die, Premium Q Swept Quartz (R) HiRel design w/ 50krad Class S die, Premium Q Swept Quartz (V) HiRel design w/ 50krad Class S die, Cultured Quartz (X) HiRel design w/ Cultured Quartz, Class S die (B) HiRel design 
Vectron International Original 

NIR52398 DOC204898 M55342 STD981 
Abstract: Energy: Exposure Rate: Electron Source 4MeV approx. 50Krad / min Total Irradiation Dose Rate , SCC561100606 Exposure Energy: Rate: 4MeV approx. 50Krad / min BFY193; Total Irradiation Dose Rate , 1020 Krad Control Samples 4MeV approx. 50Krad / min No. of Test Samples 8 8 8 8 3 BFY450 
Infineon Technologies Original 

CGY40 CGY41 CFY66 CFY67 BXY42 BXY43 Microwave PIN diode BFY196 S microwave fet IC t359 microwave transistor bfy193 
Abstract: will report only results gathered during the maximum exposure of 50Krad(Si) at 1Krad(Si)/h. Table 4 , 20Krad 35Krad 50Krad 24h 168h ICCPD (A) 0.0001 0.0001 0.024 0.127 0.116 , for a 5 Volts power supply. D Functionality OK after 50Krad(Si) exposure with 1Krad(Si)/hour. D 
Temic Semiconductors Original 

Dose SCC22900 Single Supply Operation cross TM1019 EHR95056 9849/92/NL 
Abstract: ) MIN MAX 1.20 SYMBOL 2 % 1.20 1.30 50KRAD(Si) MIN MAX 1.30 1.20 1.30 , 50KRAD(Si) MIN MAX 100KRAD(Si) MIN MAX UNITS Adjust Pin Current DIADJ CONDITIONS 
Linear Technology Original 

619W rh117 krad 
Abstract: Radiation Hardened 2.5V Reference IS1009RH, IS1009EH Features The Star*PowerTM Radiation Hardened IS1009RH, IS1009EH â'¢ Electrically screened to SMD # 596200523 are a 2.5V shunt regulator diode is designed to provide a stable 2.5V reference over a wide current range. â'¢ QML qualified per MILPRF38535 requirements â'¢ EH version acceptance tested to 50krad(Si) (LDR) These , . . . . . . . 50krad(Si)  Latchup immune. . . . . . . . . . . . . . . . dielectrically isolated 
Intersil Original 

5962F0052302VXC ISO9000 FN4780 
Abstract: as a constant current regulator that generates a current equal to 1ÂuA/Kelvin (K). â'¢ 50krad(Si , rate . . . . . . . . . . . . . . . . . 50krad(Si)* * Product capability established by initial characterization. The EH version is acceptance tested on a waferbywafer basis to 50krad(Si) at low dose rate , TID shift Ambient Error 50krad @ 0.01 rad(Si) per sec (Note 8) 1.5 0.5 Â°C Post High , Ambient Error (ERADD) is the specified accuracy after 50krad(Si) at 0.01 rad(Si) per second (LDR) and 
Intersil Original 

FN8376 5M1982 
Abstract: 10KRAD(Si) MIN MAX 20KRAD(Si) MIN MAX 1.20 SYMBOL 2 % 1.20 1.30 50KRAD(Si , : ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 5) 50KRAD(Si) MIN MAX 100KRAD(Si) MIN MAX 
Linear Technology Original 


Abstract: dose rate (50â'"300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s), insuring hardness , test. Downpoints Downpoints for the low dose rate tests were zero, 25 and 50krad(Si). Downpoints , 5 5 BIN 1 REJECTS 5 0 5 0 50krad(Si) 0.01rad(Si)/s BIAS Figure 2 0 25krad(Si) 0.01rad(Si)/s DOWNPOINT 5 0 0 5 0 25krad(Si) 5 0 50krad(Si , low dose rate test was run to 50krad(Si) and the high dose rate was run to 300krad(Si), with the high 
Intersil Original 

specification of ldr LDR SPECIFICATION LDR voltage range ISL70444SEH MILSTD883 AN1870 
Abstract: two tests (biased and unbiased) were less than the LTC data sheet limits of 20krad(Si) at the 50krad , =10mA: The PostRadiation limit at 50krad(Si) was 1.225V maximum. The parameter minimum was 1.275V. The , PostRadiation limit at 50krad(Si) was 1.225V maximum. The parameter minimum was 1.275V. The maximum voltage , limit at 50krad(Si) was 1.200V maximum. The parameter minimum was 1.300V. The maximum voltage was , at 50krad(Si) was 1.200V maximum. The parameter minimum was 1.300V. The maximum voltage was 
STMicroelectronics Original 

M54HC132 M54HC138KG M54HC595KG M54HC M54HCT DIL14 DIL16 DIL20 DIL24 
Abstract: data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , PostRadiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was 
Intersil Original 

ISL70003SEH Q3CY2014 AN1924 
Abstract: parametric limits after 50krad(Si) TID, as indicated in the Electrical Specification tables of this application note. Please note, however, that the post50krad electrical specifications shown herein are not , can be extended up to 50krad(Si). R2 R1 U1 INA OE VS OUTA INB R1 VS+ OUTB , Conclusions A simple method to extend the TID capability of the ISL7457SRH to 50krad(Si) has been described , = +25°C, Post 50krad(Si) unless otherwise specified. Refer to Figure 2 for radiation exposure 
Intersil Original 

ISL71090SEHVF25 ISL71090SEH ISL71090SEHVF12 ISL71090SEHVF50 ISL71090SEHVF75 
Abstract: 50krad(Si), respectively, providing hardness assurance at both dose rates. The sourcing and sinking 
National Semiconductor Original 

LMH6612QML 5962R0722701VZA SOIC10 CQFP128 LM117HQML DS90LV032QML 
Abstract: , radiation hardening up to 50krad(Si) (RHA level R) is met by utilizing swept quartz and active device types , number, are designed to withstand 50krad(Si) ELDRS based on previous similar device tests results , Pedigree (choose one as the 5th character in the part number): (E) Enhanced Element Evaluation, 50krad Class S die, Premium Q Swept Quartz (R) HiRel design w/ 50krad Class S die, Premium Q Swept Quartz (V) HiRel design w/ 50krad Class S die, Cultured Quartz (X) HiRel design w/ Cultured Quartz, Class S die 
Intersil Original 

NORPS12 LDR ISL70419SEH AN1949 
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