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50KRAD

Catalog Datasheet MFG & Type PDF Document Tags

0709A

Abstract: LTS-2020 two tests (biased and unbiased) were less than the LTC data sheet limits of 20krad(Si) at the 50krad , =10mA: The Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The , Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The maximum voltage , limit at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was , at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was
Aeroflex Plainview
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RH137H QML-38534 0709A LTS-2020 smd code marking 40E LTS2020 649E-03 VRG8661-S 5962-0920602KXC RH137 SCD8661 RH137K

474E-01

Abstract: 50kRad data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was
Aeroflex Plainview
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VRG8602-S 5962-0521904KYA 474E-01 50kRad 15A Adjustable Positive Voltage Regulator 43e smd code 957a VRG8601-S 5962-0521901KXC 5962-0521901KYC RH117 SCD8601

A2151

Abstract: 15A Adjustable Positive Voltage Regulator data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was
Aeroflex Plainview
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RH117H RH117K A2151 15A Adjustable Positive DC Voltage Regulator MIL 72E smd diode marking code TO3 2881E HT 12E APPLICATION VRG8660-S 5962-0920601KXC SCD8660 VRG8660

LTS-2020

Abstract: 5962-0521901KXC two tests (biased and unbiased) were less than the LTC data sheet limits of 20krad(Si) at the 50krad , =10mA: The Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The , Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The maximum voltage , limit at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was , at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was
Aeroflex Plainview
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power 22E analog LTS-2101 236E-01 46E SMD CODE Aeroflex Microelectronic Solutions power 22E VRG8609-S VRG8610-S 5962-0521904KXC 5962-0521904KYC SCD8609 VRG8609/10

A2151

Abstract: QML-38534 data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was
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VRG8608-S Power Supply Control IC dap 07 smd 340E-01 132E-02 rad hard Negative voltage regulators mev rh117 smd 43e VRG8607-S 5962-0521903KXC 5962-0521903KYC SCD8607 VRG8607/08
Abstract: specifically conducted to demonstrate LDR performance to support offering the 50krad(Si) LDR assurance tested , rad(Si)/s. Only the IS-139ASEH is wafer-by-wafer assurance tested at 50krad(Si) LDR (0.01 rad(Si)/s). LDR characterization beyond 50krad(Si) is included as indicative, but no assurance testing beyond 50krad(Si) LDR is performed in production of the "EH" part. â'¢ DLA Standard Microcircuit Drawing SMD , . . . . . . . . . .50krad(Si) â'¢ Single event latch-up immunity . . . . . . . . .>84MeV*cm2/mg â Intersil
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IS-139ASRH MIL-STD-883H AN1821
Abstract: 300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s), insuring hardness to the specified , variant), with four output voltage options selected through Low dose rate (0.01rad(Si)/s) 50krad(Si , 0 8 0 Pre-irradiation 8 8 0 50krad(Si) 8 0 100krad(Si) 8 0 , 150krad(Si) Grounded 8 100krad(Si) HDR 8 50krad(Si) 3.3 Pre-irradiation 30krad(Si) ISL71091SEH33 8 5 150krad(Si) Biased 5 100krad(Si) HDR Pre-irradiation 50krad(Si Intersil
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ISL71091SEH ISL71091SEH20 ISL71091SEH40 ISL71091SEH10 AN1939
Abstract: (Si) at high dose rate (50 - 300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s). , the low dose rate tests are 0, 10, 30 and 50krad(Si); this test will be extended to 100krad(Si , tolerance, low dose rate . . . . . . . . . . . . .50krad(Si) â'¢ QML qualified per MIL-PRF-38535 â , , 30 and 50krad(Si); this test will be extended to 100krad(Si), 150krad(Si) and the 168-hour biased , (Note 1) FAIL 5 10krad(Si) 5 0 30krad(Si) 5 0 50krad(Si) 5 0 100krad Intersil
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ISL71590SEH CY2014 AN1895

5962-08230

Abstract: a 1458 smd parametric limits after 50krad(Si) TID, as indicated in the Electrical Specification tables of this application note. Please note, however, that the post-50krad electrical specifications shown herein are not , can be extended up to 50krad(Si). R2 R1 U1 INA OE VS OUTA INB R1 VS+ OUTB , Conclusions A simple method to extend the TID capability of the ISL7457SRH to 50krad(Si) has been described , = +25°C, Post 50krad(Si) unless otherwise specified. Refer to Figure 2 for radiation exposure
Intersil
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AN1458 5962-08230 a 1458 smd IC UA 1458 ISL7457
Abstract: and low dose rate tests. The biased low dose rate samples were run successfully to 50krad(Si) but all , under biased and unbiased conditions. The biased low dose rate samples were run successfully to 50krad , rate samples passed the SMD criteria at the 50krad(Si) downpoint. All high dose rate samples passed , effectively proceeded to 50krad(Si) while the other three tests were run out to 150krad(Si). The , at all downpoints, with the biased low dose rate data truncated at 50krad(Si). The plots show the Intersil
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IS-2100ARH MIL-STD-883G

DOC203810

Abstract: , radiation hardening up to 50krad(Si) (RHA level R) is met by utilizing swept quartz and active device types , number, are designed to withstand 50krad(Si) ELDRS based on previous similar device tests results , Pedigree (choose one as the 5th character in the part number): (E) Enhanced Element Evaluation, 50krad Class S die, Premium Q Swept Quartz (R) Hi-Rel design w/ 50krad Class S die, Premium Q Swept Quartz (V) Hi-Rel design w/ 50krad Class S die, Cultured Quartz (X) Hi-Rel design w/ Cultured Quartz, Class S die
Vectron International
Original
DOC203810 CO-22326 CO-21399 DOC203982 AS9100 MIL-HDBK-1547
Abstract: )/s). Only the HS-1825AEH is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate (0.01 rad(Si)/s). The LDR performance characterization beyond the 50krad(Si) assurance level is included in this report as indicative, but no assurance testing beyond 50krad(Si) is performed at LDR in , radiation limits at the 50krad(Si) low dose rate assurance level. The current limit (VLIMIT) and , maintaining specified operation up to the 50krad(Si) level of radiation assurance testing for the "EH" Intersil
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HS-1825ARH AN1823
Abstract: hardening up to 50krad (Si) (RHA level L) is met by utilizing swept quartz and active device lots that have , number, are certified for 50krad (Si) ELDRS. 4.1.3.1 Class B Active Devices. When specified, active , 5th character in the part number): (E) Enhanced Element Evaluation, 50krad Class S die, Premium Q Swept Quartz (R) Hi-Rel design w/ 50krad Class S die, Premium Q Swept Quartz (V) Hi-Rel design w/ 50krad Class S die, Cultured Quartz (X) Hi-Rel design w/ Cultured Quartz, Class S die (B) Hi-Rel design Vectron International
Original
NIR-52398 DOC204898 M55342 STD-981

Microwave PIN diode

Abstract: BFY196 S Energy: Exposure Rate: Electron Source 4MeV approx. 50Krad / min Total Irradiation Dose Rate , SCC561100606 Exposure Energy: Rate: 4MeV approx. 50Krad / min BFY193; Total Irradiation Dose Rate , 1020 Krad Control Samples 4MeV approx. 50Krad / min No. of Test Samples 8 8 8 8 3 BFY450
Infineon Technologies
Original
CGY40 BFY180 BFY280 BFY181 BFY420 SCC561100803 Microwave PIN diode BFY196 S microwave fet IC t359 krad CGY41 CFY66 CFY67 BXY42 BXY43

Dose

Abstract: SCC22900 will report only results gathered during the maximum exposure of 50Krad(Si) at 1Krad(Si)/h. Table 4 , 20Krad 35Krad 50Krad 24h 168h ICCPD (A) 0.0001 0.0001 0.024 0.127 0.116 , for a 5 Volts power supply. D Functionality OK after 50Krad(Si) exposure with 1Krad(Si)/hour. D
Temic Semiconductors
Original
Dose SCC22900 TM1019 Single Supply Operation cross EHR95056 9849/92/NL

rh117 krad

Abstract: 619W ) MIN MAX 1.20 SYMBOL 2 % 1.20 1.30 50KRAD(Si) MIN MAX 1.30 1.20 1.30 , 50KRAD(Si) MIN MAX 100KRAD(Si) MIN MAX UNITS Adjust Pin Current DIADJ CONDITIONS
Linear Technology
Original
rh117 krad 619W

5962F0052302VXC

Abstract: IS2-1009EH-Q Radiation Hardened 2.5V Reference IS-1009RH, IS-1009EH Features The Star*PowerTM Radiation Hardened IS-1009RH, IS-1009EH â'¢ Electrically screened to SMD # 5962-00523 are a 2.5V shunt regulator diode is designed to provide a stable 2.5V reference over a wide current range. â'¢ QML qualified per MIL-PRF-38535 requirements â'¢ EH version acceptance tested to 50krad(Si) (LDR) These , . . . . . . . 50krad(Si) - Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated
Intersil
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5962F0052302VXC IS2-1009EH-Q ISO9000 FN4780
Abstract: as a constant current regulator that generates a current equal to 1µA/Kelvin (K). â'¢ 50krad(Si , rate . . . . . . . . . . . . . . . . . 50krad(Si)* * Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate , TID shift Ambient Error 50krad @ 0.01 rad(Si) per sec (Note 8) -1.5 0.5 °C Post High , Ambient Error (ERADD) is the specified accuracy after 50krad(Si) at 0.01 rad(Si) per second (LDR) and Intersil
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FN8376 5M-1982

RH117

Abstract: rh117 krad 10KRAD(Si) MIN MAX 20KRAD(Si) MIN MAX 1.20 SYMBOL 2 % 1.20 1.30 50KRAD(Si , : ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 5) 50KRAD(Si) MIN MAX 100KRAD(Si) MIN MAX
Linear Technology
Original

specification of ldr

Abstract: LDR SPECIFICATION dose rate (50â'"300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s), insuring hardness , test. Downpoints Downpoints for the low dose rate tests were zero, 25 and 50krad(Si). Downpoints , 5 5 BIN 1 REJECTS 5 0 5 0 50krad(Si) 0.01rad(Si)/s BIAS Figure 2 0 25krad(Si) 0.01rad(Si)/s DOWNPOINT 5 0 0 5 0 25krad(Si) 5 0 50krad(Si , low dose rate test was run to 50krad(Si) and the high dose rate was run to 300krad(Si), with the high
Intersil
Original
specification of ldr LDR SPECIFICATION LDR voltage range ISL70444SEH MIL-STD-883 AN1870

M54HC138KG

Abstract: M54HC595KG two tests (biased and unbiased) were less than the LTC data sheet limits of 20krad(Si) at the 50krad , =10mA: The Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The , Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The maximum voltage , limit at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was , at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was
STMicroelectronics
Original
M54HC138KG M54HC595KG M54HC132 920112001F M54HC M54HCT DIL-14 DIL-16 DIL-20 DIL-24
Abstract: data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was Intersil
Original
ISL70003SEH Q3CY2014 AN1924

ISL71090SEHVF25

Abstract: parametric limits after 50krad(Si) TID, as indicated in the Electrical Specification tables of this application note. Please note, however, that the post-50krad electrical specifications shown herein are not , can be extended up to 50krad(Si). R2 R1 U1 INA OE VS OUTA INB R1 VS+ OUTB , Conclusions A simple method to extend the TID capability of the ISL7457SRH to 50krad(Si) has been described , = +25°C, Post 50krad(Si) unless otherwise specified. Refer to Figure 2 for radiation exposure
Intersil
Original
ISL71090SEHVF25 ISL71090SEH ISL71090SEHVF12 ISL71090SEHVF50 ISL71090SEHVF75

LMH6612QML

Abstract: 5962R0722701VZA 50krad(Si), respectively, providing hardness assurance at both dose rates. The sourcing and sinking
National Semiconductor
Original
LMH6612QML 5962R0722701VZA SOIC-10 LM117HQML DS90LV032QML CQFP-128

NORPS-12 LDR

Abstract: , radiation hardening up to 50krad(Si) (RHA level R) is met by utilizing swept quartz and active device types , number, are designed to withstand 50krad(Si) ELDRS based on previous similar device tests results , Pedigree (choose one as the 5th character in the part number): (E) Enhanced Element Evaluation, 50krad Class S die, Premium Q Swept Quartz (R) Hi-Rel design w/ 50krad Class S die, Premium Q Swept Quartz (V) Hi-Rel design w/ 50krad Class S die, Cultured Quartz (X) Hi-Rel design w/ Cultured Quartz, Class S die
Intersil
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NORPS-12 LDR ISL70419SEH AN1949
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