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Abstract: two tests (biased and unbiased) were less than the LTC data sheet limits of 20krad(Si) at the 50krad , =10mA: The Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The , Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The maximum voltage , limit at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was , at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was Aeroflex Plainview
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RH137H QML-38534 0709A LTS-2020 smd code marking 40E LTS2020 LTS-2101 649E-03 VRG8661-S 5962-0920602KXC RH137 SCD8661 RH137K
Abstract: data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was Aeroflex Plainview
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VRG8602-S 5962-0521901KYC 5962-0521904KYA 474E-01 LTS0606 A2151 43e smd code smd diode marking code TO3 VRG8601-S 5962-0521901KXC RH117 SCD8601
Abstract: data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was Aeroflex Plainview
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RH117H RH117K VRG8660-201-1S MIL 72E 957a 2881E HT 12E APPLICATION VRG8660-S 5962-0920601KXC SCD8660 VRG8660
Abstract: two tests (biased and unbiased) were less than the LTC data sheet limits of 20krad(Si) at the 50krad , =10mA: The Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The , Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The maximum voltage , limit at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was , at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was Aeroflex Plainview
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VRG8610-S power 22E analog smd 37e power 22E Aeroflex Microelectronic Solutions 46E SMD CODE 236E-01 VRG8609-S 5962-0521904KXC 5962-0521904KYC SCD8609 VRG8609/10
Abstract: data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was Aeroflex Plainview
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Power Supply Control IC dap 07 smd 340E-01 smd 43e 132E-02 rad hard Negative voltage regulators mev rh117 VRG8607-S VRG8608-S 5962-0521903KXC 5962-0521903KYC SCD8607 VRG8607/08
Abstract: specifically conducted to demonstrate LDR performance to support offering the 50krad(Si) LDR assurance tested , rad(Si)/s. Only the IS-139ASEH is wafer-by-wafer assurance tested at 50krad(Si) LDR (0.01 rad(Si)/s). LDR characterization beyond 50krad(Si) is included as indicative, but no assurance testing beyond 50krad(Si) LDR is performed in production of the "EH" part. â'¢ DLA Standard Microcircuit Drawing SMD , . . . . . . . . . .50krad(Si) â'¢ Single event latch-up immunity . . . . . . . . .>84MeV*cm2/mg â Intersil
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IS-139ASRH MIL-STD-883H AN1821
Abstract: 300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s), insuring hardness to the specified , variant), with four output voltage options selected through Low dose rate (0.01rad(Si)/s) 50krad(Si , 0 8 0 Pre-irradiation 8 8 0 50krad(Si) 8 0 100krad(Si) 8 0 , 150krad(Si) Grounded 8 100krad(Si) HDR 8 50krad(Si) 3.3 Pre-irradiation 30krad(Si) ISL71091SEH33 8 5 150krad(Si) Biased 5 100krad(Si) HDR Pre-irradiation 50krad(Si Intersil
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ISL71091SEH ISL71091SEH20 ISL71091SEH40 ISL71091SEH10 AN1939
Abstract: (Si) at high dose rate (50 - 300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s). , the low dose rate tests are 0, 10, 30 and 50krad(Si); this test will be extended to 100krad(Si , tolerance, low dose rate . . . . . . . . . . . . .50krad(Si) â'¢ QML qualified per MIL-PRF-38535 â , , 30 and 50krad(Si); this test will be extended to 100krad(Si), 150krad(Si) and the 168-hour biased , (Note 1) FAIL 5 10krad(Si) 5 0 30krad(Si) 5 0 50krad(Si) 5 0 100krad Intersil
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ISL71590SEH CY2014 AN1895
Abstract: parametric limits after 50krad(Si) TID, as indicated in the Electrical Specification tables of this application note. Please note, however, that the post-50krad electrical specifications shown herein are not , can be extended up to 50krad(Si). R2 R1 U1 INA OE VS OUTA INB R1 VS+ OUTB , Conclusions A simple method to extend the TID capability of the ISL7457SRH to 50krad(Si) has been described , = +25°C, Post 50krad(Si) unless otherwise specified. Refer to Figure 2 for radiation exposure Intersil
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AN1458 5962-08230 a 1458 smd IC UA 1458 ISL7457
Abstract: and low dose rate tests. The biased low dose rate samples were run successfully to 50krad(Si) but all , under biased and unbiased conditions. The biased low dose rate samples were run successfully to 50krad , rate samples passed the SMD criteria at the 50krad(Si) downpoint. All high dose rate samples passed , effectively proceeded to 50krad(Si) while the other three tests were run out to 150krad(Si). The , at all downpoints, with the biased low dose rate data truncated at 50krad(Si). The plots show the Intersil
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IS-2100ARH MIL-STD-883G
Abstract: , radiation hardening up to 50krad(Si) (RHA level R) is met by utilizing swept quartz and active device types , number, are designed to withstand 50krad(Si) ELDRS based on previous similar device tests results , Pedigree (choose one as the 5th character in the part number): (E) Enhanced Element Evaluation, 50krad Class S die, Premium Q Swept Quartz (R) Hi-Rel design w/ 50krad Class S die, Premium Q Swept Quartz (V) Hi-Rel design w/ 50krad Class S die, Cultured Quartz (X) Hi-Rel design w/ Cultured Quartz, Class S die Vectron International
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CO-22326 DOC203810 CO-21399 DOC203982 AS9100 MIL-HDBK-1547
Abstract: )/s). Only the HS-1825AEH is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate (0.01 rad(Si)/s). The LDR performance characterization beyond the 50krad(Si) assurance level is included in this report as indicative, but no assurance testing beyond 50krad(Si) is performed at LDR in , radiation limits at the 50krad(Si) low dose rate assurance level. The current limit (VLIMIT) and , maintaining specified operation up to the 50krad(Si) level of radiation assurance testing for the "EH" Intersil
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HS-1825ARH AN1823
Abstract: hardening up to 50krad (Si) (RHA level L) is met by utilizing swept quartz and active device lots that have , number, are certified for 50krad (Si) ELDRS. 4.1.3.1 Class B Active Devices. When specified, active , 5th character in the part number): (E) Enhanced Element Evaluation, 50krad Class S die, Premium Q Swept Quartz (R) Hi-Rel design w/ 50krad Class S die, Premium Q Swept Quartz (V) Hi-Rel design w/ 50krad Class S die, Cultured Quartz (X) Hi-Rel design w/ Cultured Quartz, Class S die (B) Hi-Rel design Vectron International
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NIR-52398 DOC204898 M55342 STD-981
Abstract: Energy: Exposure Rate: Electron Source 4MeV approx. 50Krad / min Total Irradiation Dose Rate , SCC561100606 Exposure Energy: Rate: 4MeV approx. 50Krad / min BFY193; Total Irradiation Dose Rate , 1020 Krad Control Samples 4MeV approx. 50Krad / min No. of Test Samples 8 8 8 8 3 BFY450 Infineon Technologies
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CGY40 CGY41 CFY66 CFY67 BXY42 BXY43 Microwave PIN diode BFY196 S microwave fet IC t359 microwave transistor bfy193
Abstract: will report only results gathered during the maximum exposure of 50Krad(Si) at 1Krad(Si)/h. Table 4 , 20Krad 35Krad 50Krad 24h 168h ICCPD (A) 0.0001 0.0001 0.024 0.127 0.116 , for a 5 Volts power supply. D Functionality OK after 50Krad(Si) exposure with 1Krad(Si)/hour. D Temic Semiconductors
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Dose SCC22900 Single Supply Operation cross TM1019 EHR95056 9849/92/NL
Abstract: ) MIN MAX 1.20 SYMBOL 2 % 1.20 1.30 50KRAD(Si) MIN MAX 1.30 1.20 1.30 , 50KRAD(Si) MIN MAX 100KRAD(Si) MIN MAX UNITS Adjust Pin Current DIADJ CONDITIONS Linear Technology
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619W rh117 krad
Abstract: Radiation Hardened 2.5V Reference IS-1009RH, IS-1009EH Features The Star*PowerTM Radiation Hardened IS-1009RH, IS-1009EH â'¢ Electrically screened to SMD # 5962-00523 are a 2.5V shunt regulator diode is designed to provide a stable 2.5V reference over a wide current range. â'¢ QML qualified per MIL-PRF-38535 requirements â'¢ EH version acceptance tested to 50krad(Si) (LDR) These , . . . . . . . 50krad(Si) - Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated Intersil
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5962F0052302VXC ISO9000 FN4780
Abstract: as a constant current regulator that generates a current equal to 1ÂuA/Kelvin (K). â'¢ 50krad(Si , rate . . . . . . . . . . . . . . . . . 50krad(Si)* * Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate , TID shift Ambient Error 50krad @ 0.01 rad(Si) per sec (Note 8) -1.5 0.5 °C Post High , Ambient Error (ERADD) is the specified accuracy after 50krad(Si) at 0.01 rad(Si) per second (LDR) and Intersil
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FN8376 5M-1982
Abstract: 10KRAD(Si) MIN MAX 20KRAD(Si) MIN MAX 1.20 SYMBOL 2 % 1.20 1.30 50KRAD(Si , : ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 5) 50KRAD(Si) MIN MAX 100KRAD(Si) MIN MAX Linear Technology
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Abstract: dose rate (50â'"300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s), insuring hardness , test. Downpoints Downpoints for the low dose rate tests were zero, 25 and 50krad(Si). Downpoints , 5 5 BIN 1 REJECTS 5 0 5 0 50krad(Si) 0.01rad(Si)/s BIAS Figure 2 0 25krad(Si) 0.01rad(Si)/s DOWNPOINT 5 0 0 5 0 25krad(Si) 5 0 50krad(Si , low dose rate test was run to 50krad(Si) and the high dose rate was run to 300krad(Si), with the high Intersil
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specification of ldr LDR SPECIFICATION LDR voltage range ISL70444SEH MIL-STD-883 AN1870
Abstract: two tests (biased and unbiased) were less than the LTC data sheet limits of 20krad(Si) at the 50krad , =10mA: The Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The , Post-Radiation limit at 50krad(Si) was -1.225V maximum. The parameter minimum was -1.275V. The maximum voltage , limit at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was , at 50krad(Si) was -1.200V maximum. The parameter minimum was -1.300V. The maximum voltage was STMicroelectronics
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M54HC132 M54HC138KG M54HC595KG M54HC M54HCT DIL-14 DIL-16 DIL-20 DIL-24
Abstract: data sheet limits of 20krad(Si) at the 50krad(Si) test level. These lots PASSED the 15 test , Reference VDIFF=3V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum , =40V IL=10mA: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V , =0.5A: The Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The , Post-Radiation limit at 50krad(Si) was 1.30V maximum. The parameter minimum was 1.20V. The maximum voltage was Intersil
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ISL70003SEH Q3CY2014 AN1924
Abstract: parametric limits after 50krad(Si) TID, as indicated in the Electrical Specification tables of this application note. Please note, however, that the post-50krad electrical specifications shown herein are not , can be extended up to 50krad(Si). R2 R1 U1 INA OE VS OUTA INB R1 VS+ OUTB , Conclusions A simple method to extend the TID capability of the ISL7457SRH to 50krad(Si) has been described , = +25°C, Post 50krad(Si) unless otherwise specified. Refer to Figure 2 for radiation exposure Intersil
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ISL71090SEHVF25 ISL71090SEH ISL71090SEHVF12 ISL71090SEHVF50 ISL71090SEHVF75
Abstract: 50krad(Si), respectively, providing hardness assurance at both dose rates. The sourcing and sinking National Semiconductor
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LMH6612QML 5962R0722701VZA SOIC-10 CQFP-128 LM117HQML DS90LV032QML
Abstract: , radiation hardening up to 50krad(Si) (RHA level R) is met by utilizing swept quartz and active device types , number, are designed to withstand 50krad(Si) ELDRS based on previous similar device tests results , Pedigree (choose one as the 5th character in the part number): (E) Enhanced Element Evaluation, 50krad Class S die, Premium Q Swept Quartz (R) Hi-Rel design w/ 50krad Class S die, Premium Q Swept Quartz (V) Hi-Rel design w/ 50krad Class S die, Cultured Quartz (X) Hi-Rel design w/ Cultured Quartz, Class S die Intersil
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NORPS-12 LDR ISL70419SEH AN1949
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