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HI1-0508-2 Intersil Corporation 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16, FRIT SEALED, CERDIP-16 ri Buy
5962-85155082A Texas Instruments Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-LCCC -55 to 125 ri Buy

5082-3039 Datasheet

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5082-3039 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
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1 pages,
34.17 Kb

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5082-3039#T25 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
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1 pages,
34.17 Kb

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5082-3039#T50 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
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1 pages,
34.17 Kb

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5082-3039 Agilent Technologies axial lead glass packaged PIN diodes
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4 pages,
38.86 Kb

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5082-3039 Avago Technologies axial lead glass packaged PIN diodes
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4 pages,
124.38 Kb

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5082-3039 Hewlett-Packard Diode and Transistor Data Book 1980
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4 pages,
3590.06 Kb

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5082-3039 Hewlett-Packard Pin Diodes for RF Switching and Attenuating
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3 pages,
811.05 Kb

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5082-3039 Advanced Semiconductor Diode
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1 pages,
19.52 Kb

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5082-3039#T25 Avago Technologies RF Diodes, Discrete Semiconductor Products, DIODE PIN GEN PURP SW 150V AXIAL
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4 pages,
0 Kb

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5082-3039#T50 Avago Technologies RF Diodes, Discrete Semiconductor Products, DIODE PIN GEN PURP SW 150V AXIAL
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4 pages,
0 Kb

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5082-3039

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 5082-3039 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: TheASI 5082-3039 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS IF VR PDISS TJ TSTG JC 100 mA 150 V 250 mW @ TA = 25 °C -65 °C to +200 °C -65 °C to +200 °C 0.7 °C/mW NONE CHARACTERISTICS SYMBOL VBR CT RS trr IR = 10 A VR = 50 V TC = 25 °C TEST CONDITIONS f = 1.0 MHz f = 100 MHz IR = 250 mA f = 20 mA MINIMUM 150 TYPICAL MAXIMUM ... Advanced Semiconductor
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datasheet

1 pages,
19.51 Kb

diode 5082-3039 TEXT
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Abstract: Agilent 1N5719 1N5719, 1N5767 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features · Low Harmonic Distortion · Large Dynamic Range Description/Applications These general purpose switching diodes are intended for low , 0.4 0.6 1000 0.8 1.0 5082-3001 5082-3039 5082-3077 IN5719 IN5719 100 10 1 0.1 , 100 CAPACITANCE (pF) .5 5082-3039 IN5719 IN5719 1.5 1.0 5082-3188 5082-3080 5082-3081 ... Agilent Technologies
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datasheet

4 pages,
67.28 Kb

RS-296-D 1N5767 1NXXXX 5082-3077 1N5712 diode 5082-3001 IN-5719 1N57xx 1Nxx 1N5719 diode 5082- 3039 5082-3001 diode 5082-3077 5082-3080 5082-XXXX DIODE T25 in5719 TEXT
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Abstract: tape and reel specification is patterned after RS-296-D RS-296-D. 1N5719 1N5719 1N5767 1N5767 5082-3001 5082-3039 , ­ FORWARD CURRENT (mA) 100 5082-3001 5082-3039 5082-3077 IN5719 IN5719 100 10 1 0.1 , RECOVERY TIME (ns) 1.0 CAPACITANCE (pF) CAPACITANCE (pF) 2.0 .5 5082-3039 IN5719 IN5719 1.5 ... Hewlett-Packard
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datasheet

4 pages,
43.27 Kb

RS-296-D 5082-3080 HP 5082-3081 IN5719 1N5719 HP 5082-3379 1N5767 hp 3080 diode hp pin diode 5082-3081 HP 5082-3188 hp 3077 TEXT
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Abstract: Wfipl m H H M HEW LETT PACKARD PEN Diodes for RF Switching and Attenuating Technical Data 1N5719 1N5719 1N5767 1N5767 5082-3001 5082-3039 5082-3077 5082-3080/81 5082-3188 5082-3379 Features · · · · Low Harm onic D istortion Large Dynam ic Range Low S eries R esistance Low C apacitance These general , z < H Ç 0 10 X LU CO LU CC = z w 5082-3001 5082-3039 5082-3077 0 0.2 0.4 0.6 , HEWLETT« PACKARD H >OC LU 5082-3001 3039 3077 IN5719 IN5719 V, 0 10 20 30 o 100 ü 5082-3039 IN5719 IN5719 ... OCR Scan
datasheet

4 pages,
125.46 Kb

in5767 HP 5082-3039 5082-XXXX 5082-3039 HP 5082-3081 hp 3077 d823 TEXT
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Abstract: 1N5719 1N5719, 1N5767 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching , 1000 0.8 1.0 5082-3001 5082-3039 5082-3077 IN5719 IN5719 100 10 1 0.1 0.001 1.2 VF ­ FORWARD VOLTAGE (V) 0.01 1 0.1 10 5082-3039 IN5719 IN5719 20 30 40 50 1000 1.5 ... Avago Technologies
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datasheet

4 pages,
124.42 Kb

RS-296-D 1N5712 1N5719 5082-XXXX digital phase shifters in5719 1N5 diode 1nxxxx diode DIODE T25 1N5767 TEXT
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Abstract: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719 1N5719, 1N5767 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features · Low Harmonic Distortion · Large Dynamic Range · Low Series Resistance · Low Capacitance Description/Applications These general purpose , 0.4 0.6 1000 0.8 1.0 5082-3001 5082-3039 5082-3077 IN5719 IN5719 100 10 1 0.1 , 100 CAPACITANCE (pF) .5 5082-3039 IN5719 IN5719 1.5 1.0 5082-3188 5082-3080 5082-3081 ... Agilent Technologies
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datasheet

4 pages,
38.88 Kb

RS-296-D 1N5712 1N5719 1nxxxx diode diode 5082- 3039 F 5082 1N5 diode 5082-3039 diode 5082-3080 1N5767 IN5719 diode 5082-3077 TEXT
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Abstract: -296-D -296-D. 1N5719 1N5719 1N5767 1N5767 5082-3001 5082-3039 5082-3077 5082-3080/81 5082-3188 5082-3379 0.41 (. 016 , 5082-3001 5082-3039 5082-3077 . o LU o z < H Ç 0 LU CC CC = z X , 5082-3039 IN5719 IN5719 20 30 40 50 V R = 20V > LU C C 10 10 V R = 10V _ (0 C ... OCR Scan
datasheet

4 pages,
61.69 Kb

TEXT
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Abstract: tape and reel specification is patterned after RS-296-D RS-296-D. 1N5719 1N5719 1N5767 1N5767 5082-3001 5082-3039 , RESISTANCE (OHMS) IF ­ FORWARD CURRENT (mA) 100 5082-3001 5082-3039 5082-3077 IN5719 IN5719 100 10 , 5082-3039 IN5719 IN5719 1.5 1.0 5082-3188 .5 5082-3080 5082-3081 5082-3379 5082-3001 0 0 10 ... Hewlett-Packard
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datasheet

4 pages,
51.91 Kb

RS-296-D 5082-3077 5082-3188 diode 5082-3042 diode 5082-3080 hp 3080 diode 1N5719 in5719 hp pin diode 5082-3081 HP 5082-3042 1N5767 5082-3042 HP 5082-3188 5082-3043 HP 3379 HP 5082-3081 TEXT
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Abstract: 1N5719 1N5719, 1N5767 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices , , 3077, 3080 IN5719 IN5719 10,000 100,000 RF RESISTANCE (OHMS) 10 100 5082-3001 5082-3039 , 5082-3001 3039 3077 IN5719 IN5719 2.0 CAPACITANCE (pF) CAPACITANCE (pF) 1.5 .5 5082-3039 IN5719 IN5719 ... Avago Technologies
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datasheet

4 pages,
61.31 Kb

IN5719 5082-XXXX 1nxxxx diode 1N5767 1N5719 RS-296-D TEXT
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Abstract: 5082-3039 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. (V)150 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.25 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.25pò Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m Maximum Operating Temp (øC)150 Package StyleAxial-4 Mounting StyleT DescriptionRF Switching and Attenuating;Low Distrtn American Microsemiconductor ... American Microsemiconductor
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datasheet

1 pages,
6.25 Kb

TEXT
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Avago Cross Reference Results

Avago Part Cross Reference Type Manufacturer
5082-3039 Buy 1N5719 Buy Drop-in Various