NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 8052-1313-AU 8052-1313-AU 808nm 500mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type , Conditions Characteristics Ith Threshold Current Iop Po=500mW Operating Current Vop Po=500mW Operating Voltage 200mW Slope Efficiency I(500mW)-I(300mW) Monitor Current Beam Divergence , Accuracy Lasing Wavelength Im // // X Y Z Po=500mW Po=500mW Po=500mW Po=500mW Po=500mW Po=500mW Po=500mW Po=500mW Po=500mW Units mW V V Min. - Typ. 250 800 1.9 ... | Original |
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specifications of 8052 8052-1313-AU 808nm laser 300mw 500MW 808nm 200mw 808nm 300mW ir laser IR-Laser-Diode IR-Laser-Diode 808nm IR-Laser-Diode 500mW 808nm 500mw IR-Laser-Diode 808nm 300mw 8052-1313-AU abstract |
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| Abstract: Po=500mW - 0.75 1.2 A Operating Voltage Vop Po=500mW - 2.1 3.0 V Po=500mW 0.5 0.9 - W/A Lm Po=500mW, VRD=10V 0.15 0.8 3.0 mA Beam Divergence (FWHM) Parallel Perpendicular // Po=500mW 4 9 17 Degree Po=500mW 20 30 40 Degree Perpendicular Deviation Angle Po=500mW Degree Po=500mW - +3 x - +50 um y Po=500mW - - +50 um Po=500mW 790 - ... | Original |
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500MW HLDH-808-B-500-01 HLDH-808-B50001 HLDH-808-B-500-01 abstract |
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| Abstract: Fairchild Kits available thru Digi-Key Digi-Key Part Number: DIODESKITFS-ND 500MW Zener Diodes 1N5221B 1N5221B 1N5229BTR 1N5229BTR 1N5230BTR 1N5230BTR Description ZENER 2.4V 5% 500MV 500MV 4.3V 500MW 5% ZENER, DO35 4.7V 500MW , 500MW 5% ZENER, DO35 5.6V 500MW 5% ZENER, DO35 DO-35 DO-35 DO-35 DO-35 5 5 1N5233BTR 1N5233BTR 1N5235BTR 1N5235BTR 1N5236BTR 1N5236BTR 6V 500MW 5% ZENER, DO35 6.8V 500MW 5% ZENER, DO35 7.5V 500MW 5% ZENER, DO35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 5 5 5 1N5239BTR 1N5239BTR 9.1V 500MW 5% ZENER, DO35 DO-35 DO-35 5 1N5240BTR 1N5240BTR 1N5242BTR 1N5242BTR 10V ... | Original |
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1N5221B 12v zener diode 9.1V Zener diode zener 3v Fairchild zener diode zener 5.6v TSSOP48 1N5229BTR 1N5235BTR 7.5V zener diode 20v zener diode zener 4.7v 6v Zener diode 500MW 1N5221B 500MW abstract |
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| Abstract: 68 500mW 16A D39b NTE Type No. DC OPERATED R25-1D16-5/6 R25-1D16-5/6 5/6VDC SPST-NO R25-1D16-12 R25-1D16-12 12VDC 12VDC SPST-NO 270 500mW 16A D39b R25-1D16-24 R25-1D16-24 24VDC 24VDC SPST-NO 1100 500mW 16A D39b R25-1D16-48 R25-1D16-48 48VDC 48VDC SPST-NO 4200 500mW 16A D39b R25-5D16-5/6 R25-5D16-5/6 5/6VDC SPDT 68 500mW 16A D39a R25-5D16-12 R25-5D16-12 12VDC 12VDC SPDT 270 500mW 16A D39a R25-5D16-24 R25-5D16-24 24VDC 24VDC SPDT 1100 500mW 16A D39a R25-5D16-48 R25-5D16-48 48VDC 48VDC SPDT ... | Original |
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r25-5d16-48 1D16 5A16 R25-11A10-120 11A10 D39B R25-11D10-48 R25-11A10-24 R25-1D16-12 R25-11D10-12 R25-1D16-24 R25-5D16-12 R25-11D10-24 R25-5D16-24 datasheet abstract |
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| Abstract: Power: See Chart 68 500mW 16A D39b SPST-NO 270 500mW 16A D39b SPST-NO 1100 500mW 16A D39b 48VDC 48VDC SPST-NO 4200 500mW 16A D39b R25-5D16-5/6 R25-5D16-5/6 5/6VDC SPDT 68 500mW 16A D39a R25-5D16-12 R25-5D16-12 12VDC 12VDC SPDT 270 500mW 16A D39a R25-5D16-24 R25-5D16-24 24VDC 24VDC SPDT 1100 500mW 16A D39a R25-5D16-48 R25-5D16-48 48VDC 48VDC SPDT 4200 500mW 16A D39a R25-11D10-5/6 R25-11D10-5/6 5/6VDC DPDT 68 500mW 10A D39a ... | Original |
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r25-5d16-48 1D16 5A16 D39A- 11A10 R25-1D16-12 R25-1D16-24 R25-11D10-48 R25-11D10-24 R25-11D10-12 datasheet abstract |
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| Abstract: Power: See Chart 68 500mW 16A D39b SPST-NO 270 500mW 16A D39b SPST-NO 1100 500mW 16A D39b 48VDC 48VDC SPST-NO 4200 500mW 16A D39b R25-5D16-5/6 R25-5D16-5/6 5/6VDC SPDT 68 500mW 16A D39a R25-5D16-12 R25-5D16-12 12VDC 12VDC SPDT 270 500mW 16A D39a R25-5D16-24 R25-5D16-24 24VDC 24VDC SPDT 1100 500mW 16A D39a R25-5D16-48 R25-5D16-48 48VDC 48VDC SPDT 4200 500mW 16A D39a R25-11D10-5/6 R25-11D10-5/6 5/6VDC DPDT 68 500mW 10A D39a ... | Original |
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11A10 5 pin relay 12vdc 5A16 D39B 1D16 30 amp DPDT relay 24vdc coil SPDT 5 pins Relay R25 3 pins R25-1D16-12 R25-5D16-5/6 r25 transistor R25-11D10-48 R25-11D10-12 R25-1D16-24 datasheet abstract |
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| Abstract: TEST CONDITION MIN Optical Output Power Po Threshold Current Ith Operation Current Iop Po =500mW Operating Voltage Vop Po =500mW Lasing Wavelength lp Po =500mW 975 Beam Divergence Po =500mW = Beam Divergence Po =500mW UNIT mW V °C °C TYP 500 250 800 1.6 980 8 35 MAX ... | Original |
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BT98500-TO-18 BT98500-TO-18 abstract |
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| Abstract: 0. 5 1 10 0. 25 20 4 5 7A IN 914 o - A 100 75 450 150 2 1 10 0.025 20 4 4 P=500mW 24G 1N914 1N914 SS 100 75 450 150 2 1 10 5 75 0. 9 4 2 4 P=500mW 24B 1N914A 1N914A a - A 100 75 450 150 2 1 30 0. 025 20 4 4 P=500mW 24G 1N914A 1N914A 100 75 450 150 2 1 20 5 75 0. 9 4 2 4 P=500mW 24B 1N914B 1N914B a - A 100 75 450 150 2 1 100 0. 025 20 4 4 P=500mW 240 1N914B 1N914B SS 100 75 450 150 2 1 100 5 75 0. 9 4 2 4 P=500mW 24B 1N916 1N916 a - A 100 75 450 150 2 1 10 0.025 20 2 4 P=500mW 24G ... | OCR Scan |
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1N916B 1N3064 1N3600 1N3604 1N914 1N914A 1N914B 1N916 1N916A 1N3063 1N3606 1N914 abstract |
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| Abstract: 0. 5 1 10 0. 25 20 4 5 7A IN 914 o - A 100 75 450 150 2 1 10 0.025 20 4 4 P=500mW 24G 1N914 1N914 SS 100 75 450 150 2 1 10 5 75 0. 9 4 2 4 P=500mW 24B 1N914A 1N914A a - A 100 75 450 150 2 1 30 0. 025 20 4 4 P=500mW 24G 1N914A 1N914A 100 75 450 150 2 1 20 5 75 0. 9 4 2 4 P=500mW 24B 1N914B 1N914B a - A 100 75 450 150 2 1 100 0. 025 20 4 4 P=500mW 240 1N914B 1N914B SS 100 75 450 150 2 1 100 5 75 0. 9 4 2 4 P=500mW 24B 1N916 1N916 a - A 100 75 450 150 2 1 10 0.025 20 2 4 P=500mW 24G ... | OCR Scan |
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1N3063 1N3064 1N3600 1N3604 1N914 1N914A 1N914B 1N916 1N916A 1N916B IN914 in914b in916 in4152 1N3755 1N914 abstract |
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| Abstract: 0. 5 1 10 0. 25 20 4 5 7A IN 914 o - A 100 75 450 150 2 1 10 0.025 20 4 4 P=500mW 24G 1N914 1N914 SS 100 75 450 150 2 1 10 5 75 0. 9 4 2 4 P=500mW 24B 1N914A 1N914A a - A 100 75 450 150 2 1 30 0. 025 20 4 4 P=500mW 24G 1N914A 1N914A 100 75 450 150 2 1 20 5 75 0. 9 4 2 4 P=500mW 24B 1N914B 1N914B a - A 100 75 450 150 2 1 100 0. 025 20 4 4 P=500mW 240 1N914B 1N914B SS 100 75 450 150 2 1 100 5 75 0. 9 4 2 4 P=500mW 24B 1N916 1N916 a - A 100 75 450 150 2 1 10 0.025 20 2 4 P=500mW 24G ... | OCR Scan |
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1N3063 1N3064 1N3600 1N3604 1N914 1N914A 1N914B 1N916 1N916A 1N916B IN914 in916 IN916B 1N914 abstract |
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| Abstract: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT85500G RLT85500G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Aperture: 1.5 x 120 um Lasing wavelength: 850 nm typ. Optical power: 500 mW typ. Package: 9 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maxim ... | Original |
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RLT85500G RLT85500G abstract |
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| Abstract: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at S808500G S808500G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: InGaAs, active MQW Lasing wavelength: 808 nm typ., multimode Output power: 500 mW, cw Package: 9 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ra ... | Original |
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S808500G S808500G abstract |
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| Abstract: 200A300A400A500A600A700A800A 200A300A400A500A600A700A800A 900A1000A 900A1000A 1.0 BDLH-J2G12 BDLH-J2G12 5V 300ms 5mA 150mW ±12/15VDC 12/15VDC BDLH-J2G11 BDLH-J2G11 5V 300ms 5mA 150mW 12VDC 12VDC BDLH-J4G11 BDLH-J4G11 20mA 300ms 6V 400mW 12VDC 12VDC BDLH-J4aG11 4~20mA 300ms 6V 500mW 12VDC 12VDC BDLH-J4aG14 4~20mA 300ms 6V 500mW 24VDC 24VDC ... | Original |
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BDLH-J4G11 BDLH-J2G12 BDLH-J2G11 200A300A400A500A600A700A800A 900A1000A 12/15VDC 12VDC 24VDC BDLH-J2G12 abstract |
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| Abstract: 200A300A400A500A600A700A800A900A1000A 200A300A400A500A600A700A800A900A1000A BDLH-Z2G12 BDLH-Z2G12 5V 10ms 5mA 0.5 150mW �/15VDC /15VDC BDLH-Z2G11 BDLH-Z2G11 5V 10ms 5mA 0.5 200mW �/15VDC /15VDC BDLH-Z4G11 BDLH-Z4G11 20mA 300ms 6V 0.5 400mW 12VDC 12VDC BDLH-Z4aG12 4~20mA 300ms 6V 0.5 500mW �/15VDC /15VDC BDLH-Z4aG11 4~20mA 300ms 6V 0.5 500mW 12VDC 12VDC ... | Original |
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BDLH-Z4G11 BDLH-Z2G12 BDLH-Z2G11 15Vdc- 15VDC 200A300A400A500A600A700A800A900A1000A 12/15VDC 12VDC BDLH-Z2G12 abstract |
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| Abstract: 990701 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808500GLI RLT808500GLI TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing wavelength: 808 nm typ. NOTE! Output power: 500 mW, cw LASERDIODE Package: 9 mm MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Ph ... | Original |
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RLT808500GLI datasheet abstract |
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| Abstract: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT1050M-500G RLT1050M-500G TECHNICAL DATA High Power Infrared Laser Diode NOTE! Lasing mode structure: multi mode Lasing wavelength: typ. 1050 nm Optical power: 500 mW Package: 9 mm (SOT-148) LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode ... | Original |
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RLT1050M-500G RLT1050M-500G abstract |
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| Abstract: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT91500G RLT91500G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: AlGaAs quantum well Lasing wavelength: 915 nm typ., multimode Optical power: 500 mW, 1 x 50 um² aperture Package: 9 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and phot ... | Original |
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RLT91500G PIN photodiode 500 nm RLT91500G abstract |
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| Abstract: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT78500G RLT78500G TECHNICAL DATA High Power Infrared Wavelength Laserdiode NOTE! Structure: AlGaAs/GaAs, Aperture: 50 x 1 um² Lasing wavelength: 785 nm, multimode Typ. optical power: 500 mW Package: 9 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode ... | Original |
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RLT78500G RLT78500G abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| * DualPNP linking file *AD Si Dual Matched PNP 500mw 40V 20mA 200MHz pkg:TO99 1,2,3,5,6,7 .PARAM XMAT02 XMAT02 XMAT02 XMAT02 File:AD3.lib *AD Si Dual Matched PNP 500mw 36V 20mA 190MHz pkg:TO99 1,2,3,5,6,7 .PARAM XMAT03 XMAT03 XMAT03 XMAT03 File:AD3.lib *AD Si Dual Matched PNP 36V 20mA 190MHz pkg:Dip8 1,2,3,6,7,8 .PARAM XSSM2220 XSSM2220 XSSM2220 XSSM2220 File:Ad3.lib www.datasheetarchive.com/files/spicemodels/misc/models/dualpnp.sub |
Spice Models | 17/09/2010 | 0.3 Kb | SUB | dualpnp.sub |
| Insulation resistance of 500MW min at 500VDC 500VDC 500VDC 500VDC Ambient operating temperature range is -40 to +105°C www.datasheetarchive.com/files/molex/docs/wcd00021/wcd0214f.htm |
Molex | 30/06/1999 | 5.31 Kb | HTM | wcd0214f.htm |
| AC for 1 minute Insulation resistance of 500MW min at 500VDC 500VDC 500VDC 500VDC Ambient operating temperature range www.datasheetarchive.com/files/molex/docs/00005/0053e.htm |
Molex | 20/12/1997 | 7.29 Kb | HTM | 0053e.htm |
| Voltage: 1000V Insulation Resistance: 500 MW min. Shielding Effectiveness: 20 dB min www.datasheetarchive.com/files/molex/docs/wcd00004/wcd004ac.htm |
Molex | 30/06/1999 | 3.54 Kb | HTM | wcd004ac.htm |
| .0 D10 DIODE ZENER 5.6V 500MW SOD123 DIODE INC., BZT52C5V6 BZT52C5V6 BZT52C5V6 BZT52C5V6 23.0 1.0 F1 FUSE, 6.3A 32V T-LAG 1206 SMD www.datasheetarchive.com/download/56828719-364979ZC/1721a.zip (1721Acf.xls) |
Linear | 21/06/2011 | 1672.98 Kb | ZIP | 1721a.zip |
| the RD3 can also be reconfigured to provide 500mW or 100mW at even lower system cost. The RD3 www.datasheetarchive.com/files/power-integrations/piwebsite/top209pr.htm |
Power-Integrations | 21/05/1998 | 5.74 Kb | HTM | top209pr.htm |
| 500mW, 1VIN, Adjustable Output Voltage www.datasheetarchive.com/files/unitrode/catalog/apps/apps_sbj.htm |
Unitrode | 21/05/1998 | 84.31 Kb | HTM | apps_sbj.htm |
| . (*) 500mW: @ 65 o C derated to 300 mW by 10 mW/ o C: 65 o C to 85 o C PIN www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6396-v3.htm |
STMicroelectronics | 25/05/2000 | 12.61 Kb | HTM | 6396-v3.htm |
| these condition is not implied. (*) 500mW: @ 65 o C derated to 300 mW by 10 mW/ o C: 65 o C www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6504.htm |
STMicroelectronics | 20/10/2000 | 14 Kb | HTM | 6504.htm |