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500MW

Catalog Datasheet MFG & Type PDF Document Tags

2G105J

Abstract: 2g272 , 2.7â"¦, 500mW, 5% MCRC1/2G2R7JT-RH Resistor, Carbon, 75kâ"¦, 250mW, 5% MCRC1/4G753JT-RH Resistor, Carbon, 3â"¦, 500mW, 5% MCRC1/2G3R0JT-RH Resistor, Carbon, 82kâ"¦, 250mW, 5% MCRC1/4G823JT-RH Resistor, Carbon, 3.3â"¦, 500mW, 5% MCRC1/2G3R3JT-RH Resistor, Carbon, 100kâ"¦, 250mW, 5% MCRC1/4G104JT-RH Resistor, Carbon, 3.9â"¦, 500mW, 5% MCRC1/2G3R9JT-RH Resistor, Carbon, 110kâ"¦, 250mW, 5% MCRC1/4G114JT-RH Resistor, Carbon, 4.7â"¦, 500mW, 5% MCRC1/2G4R7JT
Multicomp
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2G105J 2g272 MCRC100G100KB-RH 2G682J MCRC100G102KB-RH MCRC100G105KB-RH

RESISTOR

Abstract: MF-12 /8W (125mW) 1.85 3.5 MF25 1/4W (250mW) 2.5 6.8 MF50 1/2W (500mW) 3.5 , Resistor, 100K, 500mW, 1% MF50 100K Resistor, 500mW 1% 100K MF50 100K. www.element14.com , Leaded Description Resistor, 100R, 500mW, 1% Resistor, 10K, 500mW, 1% Part Number MF50 100R MF50 10K Resistor, 500mW 1% 10R MF50 10R Resistor, 500mW 1% 10R MF50 10R. Resistor, 500mW 1% 110K MF50 110K Resistor, 500mW 1% 110R MF50 110R Resistor, 500mW 1% 11K MF50 11K
Multicomp
Original
RESISTOR MF-12

1N3606

Abstract: SS7550 4 4 P=500mW 24G 1N914 SS 100 75 450 150 2 1 10 5 75 0. 9 4 2 4 P=500mW 24B 1N914A a â'" A 100 75 450 150 2 1 30 0. 025 20 4 4 P=500mW 24G 1N914A 100 75 450 150 2 1 20 5 75 0. 9 4 2 4 P=500mW 24B 1N914B a â'" A 100 75 450 150 2 1 100 0. 025 20 4 4 P=500mW 240 1N914B SS 100 75 450 150 2 1 100 5 75 0. 9 4 2 4 P=500mW 24B 1N916 a â'" A 100 75 450 150 2 1 10 0.025 20 2 4 P=500mW 24G 1N916 JRS 100 75 450 150 2 1 10 5 75 0. 9 2 2 4 P=500mW Z4B 1N916A a â
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OCR Scan
1N916B 1N3063 1N3064 1N3600 1N3606 SS7550 1N3604 1N4149 1N4150

IR-Laser-Diode 808nm 300mw

Abstract: 808nm 500mw 8052-1313-AU 808nm 500mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type , Conditions Characteristics Ith Threshold Current Iop Po=500mW Operating Current Vop Po=500mW Operating Voltage 200mW Slope Efficiency I(500mW)-I(300mW) Monitor Current Beam Divergence , Accuracy Lasing Wavelength Im // // X Y Z Po=500mW Po=500mW Po=500mW Po=500mW Po=500mW Po=500mW Po=500mW Po=500mW Po=500mW Units mW V V Min. - Typ. 250 800 1.9
DB Lectro
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IR-Laser-Diode 808nm 300mw 808nm 500mw IR-Laser-Diode 500mW IR-Laser-Diode 808nm IR-Laser-Diode 808nm 300mw laser diode

MCF 0.5W 3K9

Abstract: MCF 2W 47K Resistor, 500mW 5% 1M2 MCF 0.5W 1M2 Resistor, 250mW 5% 1M2 MCF 0.25W 1M2 Resistor, 250mW 5% 1M5 , Resistor, 2.2K, 500mW, 5% MCF 0.5W 2K2 Resistor, 500mW 5% 27R MCF 0.5W 27R Resistor, 500mW 5% 270R MCF 0.5W 270R Resistor, 500mW 5% 27K MCF 0.5W 27K Resistor, 500mW 5% 270K MCF 0.5W , , 250mW 5% 8M2 MCF 0.25W 8M2 Resistor, 250mW 5% 10M MCF 0.25W 10M Resistor, 500mW 5% 1M5 MCF 0.5W 1M5 Resistor, 500mW 5% 1M8 MCF 0.5W 1M8 Resistor, 500mW 5% 2M2 MCF 0.5W 2M2
Multicomp
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MCF 0.5W 3K9 MCF 2W 47K CFR-50JT-52/220R DLS12D1-O(M)0.25W 350PPM/

XC6382A501PR

Abstract: XC6383E201M XC6381A201PR 2.0 10 0.9 500mW 155 13.7 70 SOT-89 0.57 XC6381A301MR 3.0 10 0.9 150mW 155 7.9 80 SOT-23 0.59 XC6381A301PR 3.0 10 0.9 500mW 155 7.9 80 SOT-89 0.57 XC6381A501MR 5.0 10 0.9 150mW 155 4.3 85 SOT-23 0.59 XC6381A501PR 5.0 10 0.9 500mW 155 4.3 85 SOT-89 0.57 External Transistor Drive 2.0V ­ 7.0V Available XC6381B201MR 2.0 10 0.9 150mW 155 210 70 SOT-23 0.59 XC6381B201PR 2.0 10 0.9 500mW 155 210 70 SOT-89 0.57 XC6381B301MR 3.0 10 0.9 150mW 155 114 80 SOT-23 0.59 XC6381B301PR 3.0 10 0.9 500mW 155 114 80 SOT-89 0.57
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XC6382A501PR XC6383E201M SOT895 XC6383B301PR XC6383A201M XC6382F501 XC638 100KH XC6381 XC6382 XC6383 XC6385

IN916B

Abstract: 1N3063 4 4 P=500mW 24G 1N914 SS 100 75 450 150 2 1 10 5 75 0. 9 4 2 4 P=500mW 24B 1N914A a â'" A 100 75 450 150 2 1 30 0. 025 20 4 4 P=500mW 24G 1N914A 100 75 450 150 2 1 20 5 75 0. 9 4 2 4 P=500mW 24B 1N914B a â'" A 100 75 450 150 2 1 100 0. 025 20 4 4 P=500mW 240 1N914B SS 100 75 450 150 2 1 100 5 75 0. 9 4 2 4 P=500mW 24B 1N916 a â'" A 100 75 450 150 2 1 10 0.025 20 2 4 P=500mW 24G 1N916 JRS 100 75 450 150 2 1 10 5 75 0. 9 2 2 4 P=500mW Z4B 1N916A a â
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OCR Scan
IN916B IN914 in916 1N4151 1N4152 1N4153 1N4154 1N4446 25MIN
Abstract: °C 200mA 200mA 200mA 200mA 250mA 200mA 200mA 150mA 150mA 150mA 500mW 500mW 500mW 500mW 500mW 500mW 500mW 500mW 500mW 500mW 50nS 50nS 50nS 50nS 4.0nS 4.0nS 4.0nS 2.0nS -
OCR Scan
BAV100 BAV102 LL914 LL4148 LL4150 LL4151

1N3755

Abstract: in4152 4 4 P=500mW 24G 1N914 SS 100 75 450 150 2 1 10 5 75 0. 9 4 2 4 P=500mW 24B 1N914A a â'" A 100 75 450 150 2 1 30 0. 025 20 4 4 P=500mW 24G 1N914A 100 75 450 150 2 1 20 5 75 0. 9 4 2 4 P=500mW 24B 1N914B a â'" A 100 75 450 150 2 1 100 0. 025 20 4 4 P=500mW 240 1N914B SS 100 75 450 150 2 1 100 5 75 0. 9 4 2 4 P=500mW 24B 1N916 a â'" A 100 75 450 150 2 1 10 0.025 20 2 4 P=500mW 24G 1N916 JRS 100 75 450 150 2 1 10 5 75 0. 9 2 2 4 P=500mW Z4B 1N916A a â
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OCR Scan
1N3755 in4152 in914b

R25-5D16-24

Abstract: R25-1D16-24 Power: See Chart 68 500mW 16A D39b SPST-NO 270 500mW 16A D39b SPST-NO 1100 500mW 16A D39b 48VDC SPST-NO 4200 500mW 16A D39b R25-5D16-5/6 5/6VDC SPDT 68 500mW 16A D39a R25-5D16-12 12VDC SPDT 270 500mW 16A D39a R25-5D16-24 24VDC SPDT 1100 500mW 16A D39a R25-5D16-48 48VDC SPDT 4200 500mW 16A D39a R25-11D10-5/6 5/6VDC DPDT 68 500mW 10A D39a
NTE Electronics
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R25-11A10-24 R25-11A10-120 R25-1D16-12 R25-1D16-24 R25-11D10-12 R25-11D10-24 Transistor R25 R25-11D10-48 28VDC 120VAC R25-5A16-24 24VAC R25-5A16-120

zener diode 4.7V

Abstract: zener 8v diode Fairchild Kits available thru Digi-Key Digi-Key Part Number: DIODESKITFS-ND 500MW Zener Diodes 1N5221B 1N5229BTR 1N5230BTR Description ZENER 2.4V 5% 500MV 4.3V 500MW 5% ZENER, DO35 4.7V 500MW 5% ZENER, DO35 Pkg DO-35 DO-35 DO-35 Parts per Kit 5 5 5 1N5231BTR 1N5232BTR 5.1V 500MW 5% ZENER, DO35 5.6V 500MW 5% ZENER, DO35 DO-35 DO-35 5 5 1N5233BTR 1N5235BTR 1N5236BTR 6V 500MW 5% ZENER, DO35 6.8V 500MW 5% ZENER, DO35 7.5V 500MW 5% ZENER, DO35 DO-35 DO-35 DO
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zener diode 4.7V zener 8v diode zener 18V zener diode 6.8v Zener 5.1V MicroPak-10 1N5239BTR 1N5240BTR 1N5242BTR 1N5248BTR 1N5250B MLP-24

1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-25

Abstract: XC6372E501P Step-Up 2.0V ­ 7.0V Available XC6371A301PR 3.0 0.9 ~ 10 500mW 100 87 ­ 2.4 85 SOT-89 0.60 XC6371A501PR 5.0 0.9 ~ 10 500mW 100 87 ­ 2.4 85 SOT-89 0.60 XC6371B301PR 3.0 0.9 ~ 10 500mW 100 87 ­ 62.5 85 SOT-89 0.60 XC6371B501PR 5.0 0.9 ~ 10 500mW 100 87 ­ 62.5 85 SOT-89 0.60 XC6371C301PR 3.0 0.9 ~ 10 500mW 100 87 ­ 2.4 85 SOT-89-5 0.60 XC6371C501PR 5.0 0.9 ~ 10 500mW 100 87 ­ 2.4 85 SOT-89-5 0.60 XC6371D301PR 3.0 0.9 ~ 10 500mW 100 87 ­ 62.5 85 SOT-89-5 0.60 XC6371D501PR 5.0 0.9 ~ 10 500mW 100 87 ­ 62.5 85 SOT
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1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-25 XC6372E501P 8A SOT-89 XC6371B301 XC6372A301PR 8E sot-89 XC6367 XC6368 XC6371 XC6372 XC6373 180KH

A642 transistor pnp

Abstract: a603 transistor D12E109 6 6 fi N-PL N-PL N-PL s s fi L1 7f L2b L2d Ptfboth sides)-500mW;hFE1/2-.60 min;VBE(1-2)-15mV max , ,1.0 max;VBE(1-2)-15mV max;Pc-500mW both. VCE0-15V max;hFE-30 min. at 10mA;AhFE-20%;AVBE±5.0mV. Pt , 500mW:IDSS 1/2 1.0max;VGS(1-2)2.0mVmax:IG(1-2)10nA max;Yfs 1-2 1.0 max. 79 80 81 FM1101* FM 1102* FMI 103* 6 6 fi N0 N0 N0 s s fi L74 L74 L74 Pd 500mW;IDSS 1/2 I.Omax; VGS(1-2)5.0mVmax;IG(1-2)10nA max;Yfs 1/2 1.0 max. Pd 500mW;IDSS 1/2 1.0max;VGS(1-2)10mVmax;IG(1-2)10nAmax;Yfs 1/2 1.0 max. Pd 500mW
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OCR Scan
FM1208 A642 transistor pnp a603 transistor A608 transistor pnp transistor A608 A608 N A608 FM1210 FM1211 VCEO-20V FT4020 FT4021

R25-11D10-24

Abstract: R25-11D10-12 Power: See Chart 68 500mW 16A D39b SPST-NO 270 500mW 16A D39b SPST-NO 1100 500mW 16A D39b 48VDC SPST-NO 4200 500mW 16A D39b R25-5D16-5/6 5/6VDC SPDT 68 500mW 16A D39a R25-5D16-12 12VDC SPDT 270 500mW 16A D39a R25-5D16-24 24VDC SPDT 1100 500mW 16A D39a R25-5D16-48 48VDC SPDT 4200 500mW 16A D39a R25-11D10-5/6 5/6VDC DPDT 68 500mW 10A D39a
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11A10 1D16 5A16 R25-1D16-48 R25-1D16-5/6 R95-132 R95-131

Fiber-Bragg-Grating

Abstract: 980nm 500mw ML8xx5 (980nm High Power LD) FEATURES DESCRIPTION High Power (CW 500mW) ML8xx5 series are , 980nm and Ridge waveguide with window structure standard continuous light output of @500mW, and , Threshold current CW - 110 150 mA Iop Operation current CW,Po=500mW - 680 730 mA Vop Operating voltage CW,Po=500mW - 2.1 2.5 V c Center wavelength CW,Po=500mW 970 980 990 nm Spectral width (RMS , -20dB) CW,Po=500mW, RMS -
Mitsubishi
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ML861E5S Fiber-Bragg-Grating 980nm 500mw 980NM laser diode 980nm single mode 13MAX

R25-5D16-24

Abstract: R25-1D16-24 68 500mW 16A D39b NTE Type No. DC OPERATED R25-1D16-5/6 5/6VDC SPST-NO R25-1D16-12 12VDC SPST-NO 270 500mW 16A D39b R25-1D16-24 24VDC SPST-NO 1100 500mW 16A D39b R25-1D16-48 48VDC SPST-NO 4200 500mW 16A D39b R25-5D16-5/6 5/6VDC SPDT 68 500mW 16A D39a R25-5D16-12 12VDC SPDT 270 500mW 16A D39a R25-5D16-24 24VDC SPDT 1100 500mW 16A D39a R25-5D16-48 48VDC SPDT
NTE Electronics
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D39B R25-11D10-5
Abstract: Fairchild Kits available through Digi-Key Digi-Key Part Number: DIODESKITFS-ND 500MW Zener Diodes Description PKG parts per kit 1N5229BTR 4.3V 500MW 5% ZENER, DO35 DO-35 10 1N5230BTR 4.7V 500MW 5% ZENER, DO35 DO-35 10 1N5231BTR 5.1V 500MW 5% ZENER, DO35 DO-35 10 1N5232BTR 5.6V 500MW 5% ZENER, DO35 DO-35 10 1N5235BTR 6.8V 500MW 5% ZENER, DO35 DO-35 10 1N5239BTR 9.1V 500MW 5% ZENER, DO35 DO-35 10 1N5240BTR 10V 500MW 5 Fairchild Semiconductor
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FXL2TD24510X FXL4245MPX FXL4T245BQX DQFN-14 DQFN-16 FXL5T244BQX
Abstract: : Laser Diode (2) Structure: TO-5ï¼Ï9.0mm ),With Pb free glass cap, PD (3) Power Output: 500mW , Min. Typ. Max. Threshold Current Ith Po=500mW 110 130 Operating Current Iop Po=500mW 570 600 Operating Voltage Vop Po=500mW 2.0 2.1 375mW-125mW Slope Efficiency 0.8 1.1 η I375 mW-I125 mW Monitor Current Im Po=500mW 0.6 2.5 Beam Divergence Parallel θ// Po=500mW 11 (FWHM) Perpendicular θ⥠Po=500mW 38 Lasing Wavelength* λ Po=500mW 803 808 811 â—θ// and θ⥠are Laser Components
Original
LCU80E041A- W-125 W-I125

HLDH-808-B50001

Abstract: HLDH-808-B-500-01 Unit Threshold Current Ith - - 0.18 0.3 A Operating Current Lop Po=500mW - 0.75 1.2 A Operating Voltage Vop Po=500mW - 2.1 3.0 V Po=500mW 0.5 0.9 - W/A Lm Po=500mW, VRD=10V 0.15 0.8 3.0 mA Beam Divergence (FWHM) Parallel Perpendicular // Po=500mW 4 9 17 Degree Po=500mW 20 30 40 Degree Perpendicular Deviation Angle Po=500mW Degree Po=500mW - +3 x
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HLDH-808-B-500-01 HLDH-808-B50001

808nm 500mw

Abstract: 808nm laser laser diodes 808nm OED-LDH8004F OED-LDH8005F Features · · · · LUMEX Visible lig h t: X - 808 nm (Typ.) Output power: 200mW/500mW, CW High Efficiency MOCVD Quantum Well Design Standard TO-5 package (9mm 0 ) Applications · Diode pump solid state laser · Medical instrument Parameters Optical Power (mW) Operating Temperature (°C) Storage Temperature (°C) LD Reverse Voltage (V) PD Reverse , Condition 813 200 800 2.8 1.0 6.3 Po=500mW Po=500mW Po=500mW, FWHM Po=500mW CW Po=500mW Po=500mW 805 0.4
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OCR Scan
808nm laser 808nm 500mW laser diode 9mm W/500
Abstract: Power: See Chart 68 500mW 16A D39b SPST-NO 270 500mW 16A D39b SPST-NO 1100 500mW 16A D39b 48VDC SPST-NO 4200 500mW 16A D39b R25-5D16-5/6 5/6VDC SPDT 68 500mW 16A D39a R25-5D16-12 12VDC SPDT 270 500mW 16A D39a R25-5D16-24 24VDC SPDT 1100 500mW 16A D39a R25-5D16-48 48VDC SPDT 4200 500mW 16A D39a R25-11D10-5/6 5/6VDC DPDT 68 500mW 10A D39a -
OCR Scan
1N746A D0-204AH D0-204AA

1N4705

Abstract: Fairchild Kits available thru Digi-Key Digi-Key Part Number: DIODESKITFS-ND 500MW Zener Diodes 1N5221B 1N5229BTR 1N5230BTR Description ZENER 2.4V 5% 500MV 4.3V 500MW 5% ZENER, DO35 4.7V 500MW 5% ZENER, DO35 Pkg DO-35 DO-35 DO-35 Parts per Kit 5 5 5 1N5231BTR 1N5232BTR 5.1V 500MW 5% ZENER, DO35 5.6V 500MW 5% ZENER, DO35 DO-35 DO-35 5 5 1N5233BTR 1N5235BTR 1N5236BTR 6V 500MW 5% ZENER, DO35 6.8V 500MW 5% ZENER, DO35 7.5V 500MW 5% ZENER, DO35 DO-35 DO-35 DO
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OCR Scan
1N4705 1N4678
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