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MABA-009180-500MHZ MACOM RF Transformer, 0.4MHz Min, 500MHz Max, SM-22, ROHS COMPLIANT visit Digikey Buy
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ASTMUPCFL-33-212.500MHZ-LJ-E-T3 Abracon Corporation LVCMOS Output Clock Oscillator, visit Digikey Buy

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Part : FUSB1500MHX Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 214,944 Best Price : $0.51 Price Each : $0.51
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500MH

Catalog Datasheet MFG & Type PDF Document Tags

ICS8430-61

Abstract: DATA SHEET ICS8430-61 Integrated ICS8430-61 500MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL Circuit 500MH Z , at a frequency range of 250MHz to 500MHz. The VCO frequency is programmed in steps equal to the value , provides a 1MHz reference frequency. The VCO of the PLL operates over a range of 250MHz to 500MHz. The , Selectable crystal oscillator interface or LVCMOS/LVTTL TEST_CLK · Output frequency range: 20.83MHz to 500MHz · Crystal input frequency range: 14MHz to 27MHz · VCO range: 250MHz to 500MHz · Parallel or serial
Integrated Circuit Systems
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250MH MK1491-14 ICS1890 ICS1527 ICS280 199707558G

ICS8430-61

Abstract: 32-PIN operates at a frequency range of 250MHz to 500MHz. The VCO frequency is programmed in steps equal to the , , this provides a 1MHz reference frequency. The VCO of the PLL operates over a range of 250MHz to 500MHz. , Z RYSTAL 500MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER 500MH , C -TO-3.3V , ICS8430-61 Circuit Z RYSTAL 500MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER 500MH , ICS8430-61 Circuit Z RYSTAL 500MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER 500MH
Integrated Circuit Systems
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32-PIN ICS8430AY-61 ICS84332 MS-026
Abstract: /0V RG = 0W, L=500mH *Eon includes diode reverse recovery S pF pF ns mJ - 55 , ID= 7A VGS = 18V/0V RG= 0W L=500mH 200 Ta = 25ºC VDD= 600V VGS = 18V/0V RG= 0W L=500mH , 18V/0V L=500mH Switching Energy : E [mJ] 300 250 Eon 200 150 Eoff 100 50 0 0 ROHM
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SCT2160KE R1102B
Abstract: =7A VGS = 18V/0V RG = 0W, L=500mH *Eon includes diode reverse recovery mJ - 55 - lGate , Fig.17 Typical Switching Loss vs. Drain Current 800 Ta = 25ºC ID= 7A VGS = 18V/0V RG= 0W L=500mH 200 Ta = 25ºC VDD= 600V VGS = 18V/0V RG= 0W L=500mH 700 Switching Energy : E [mJ , Gate Resistance 350 Ta = 25ºC VDD= 600V ID= 7A VGS = 18V/0V L=500mH Switching Energy : E [mJ ROHM
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S2306
Abstract: =4A VGS = 18V/0V RG = 0W, L=500mH *Eon includes diode reverse recovery mJ - 20 - lGate , .17 Typical Switching Loss vs. Drain Current 120 300 Ta = 25ºC ID= 4A VGS = 18V/0V RG= 0W L=500mH , Ta = 25ºC VDD= 600V VGS = 18V/0V RG= 0W L=500mH 250 200 Eon 150 Eoff 100 50 0 , Resistance 160 Ta = 25ºC VDD= 600V ID= 4A VGS = 18V/0V L=500mH Switching Energy : E [mJ] 140 ROHM
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S2308

1212EMS-A10-02

Abstract: smd a10 CIT1212EMS-A10-01 0mA 500Vdc 600Q±10% [500Q load] 1.5dB max. ±1dB -5 0 d B min. 500mH min. 550 max. 6612 max. SMD CIT 1212EMS-A10-02 0mA 1,5kVdc 6000±10% [5000 load] 1.5dB max. ±1dB -5 0 d B min. 500mH min. 550
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OCR Scan
CIT1412ERS CIT1212EMS smd a10 e bobbin cit smd 160SS CIT2016ERS 1412ERS-A10-01 CIT2016ERS-A10-01
Abstract: =10A VGS = 18V/0V RG = 0W, L=500mH *Eon includes diode reverse recovery mJ - 51 - lGate , Current 1200 300 Ta = 25ºC ID=10A VGS = 18V/0V RG=0W L=500mH 200 1100 Ta = 25ºC VDD=600V VGS = 18V/0V RG=0W L=500mH 1000 Switching Energy : E [mJ] Switching Energy : E [mJ] 250 , Resistance 500 Ta = 25ºC VDD=600V ID=10A VGS = 18V/0V L=500mH 450 Switching Energy : E [mJ ROHM
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S2301
Abstract: Turn - off switching loss Eon *3 Eoff *3 VDD = 600V, ID=10A VGS = 18V/0V RG = 0W, L=500mH , 300 Ta = 25ºC ID=10A VGS = 18V/0V RG=0W L=500mH 200 1100 Eon 150 100 50 0 Eoff 0 200 Ta = 25ºC VDD=600V VGS = 18V/0V RG=0W L=500mH 1000 Switching Energy : E , Resistance 500 Ta = 25ºC VDD=600V ID=10A VGS = 18V/0V L=500mH 450 Switching Energy : E [mJ ROHM
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SCT2080KE
Abstract: =3A VGS = 18V/0V RG = 0W, L=500mH *Eon includes diode reverse recovery mJ - 17 - lGate , = 3A VGS = 18V/0V RG= 0W L=500mH Eon 60 50 40 30 Eoff 20 Ta = 25ºC VDD= 600V VGS = 18V/0V RG= 0W L=500mH 250 200 Eon 150 100 Eoff 50 10 0 0 0 200 , VDD= 600V ID= 3A VGS = 18V/0V L=500mH Switching Energy : E [mJ] 110 100 90 80 Eon 70 ROHM
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S2305
Abstract: , L=500mH *Eon includes diode reverse recovery S pF pF ns mJ - 17 - lGate , = 3A VGS = 18V/0V RG= 0W L=500mH 90 Switching Energy : E [mJ] Fig.20 Typical Switching Loss , = 0W L=500mH 250 200 Eon 150 100 Eoff 50 10 0 0 200 400 600 800 , = 3A VGS = 18V/0V L=500mH Switching Energy : E [mJ] 110 100 90 80 Eon 70 60 50 40 ROHM
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SCT2450KE
Abstract: =10A VGS = 18V/0V RG = 0W, L=500mH *Eon includes diode reverse recovery S pF ns mJ - 64 , .20 Typical Switching Loss vs. Drain Current 400 1100 Ta = 25ºC ID=10A VGS = 18V/0V RG=0W L=500mH , =0W L=500mH 1000 Switching Energy : E [mJ] 350 Switching Energy : E [mJ] 1200 400 , =10A VGS = 18V/0V L=500mH 550 Switching Energy : E [mJ] 500 450 400 Eon 350 300 250 ROHM
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SCH2080KE

smd 1203 5

Abstract: smd a10 V22. bis(2400bps) SMD CIT1212EMS-A10-01 0mA 500V 600±10%[500 load] 1.5dB max. ±1dB ­50dB min. 500mH , SMD CIT1212EMS-A10-02 0mA 1.5kV 600±10%[500 load] 1.5dB max. ±1dB ­50dB min. 500mH min. 55 max. 66 max
TDK
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smd 1203 5 SMD MARKING 7G SMD MARKING 3D tip 42 smd CIT1414EP A10-01 A10-05 CIT1515EPC CIT1412ERS-A10-01 CIT1414EP-A10-01
Abstract: 220mH 120mH Im H 500mH 8 8 8 9 9 lOmH lOOmH 250mH 250mH 10 10 10 11 1.25mH 360mH 11 .45 x .29 2mH 500mH .05mH 15mH 12 51 .65 x .33 Im H 500m H -
OCR Scan
Abstract: , L=500mH *Eon includes diode reverse recovery S pF pF ns mJ - 20 - lGate , ID= 4A VGS = 18V/0V RG= 0W L=500mH 100 80 Eon Switching Energy : E [mJ] Switching Energy : E [mJ] 120 60 40 Eoff 20 0 Ta = 25ºC VDD= 600V VGS = 18V/0V RG= 0W L=500mH , L=500mH Switching Energy : E [mJ] 140 120 Eon 100 80 60 Eoff 40 20 0 0 ROHM
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SCT2280KE

resistor 500 ohm

Abstract: X o O o r- DO d L±J o 1. Mechanical Dimensions: 0.675 Max XFMRS WWW )03 3XF5003-CS 1 D 0.500 00 F 00.031 ±0.005 £ S DQfr) O 2. Schematic: 1 o- 5 DOT 3 O- 3. Electrical Specifications: ®25°C OCL: Pins 1-3 500mH Min @1.0KHz,1.0V Sensed Current: 40A Max Terminating Resistor: 500 Ohm DCR: Pins 1-3 30 Ohms Max Notes; 1. Solderabllity: Leads shall meet MIL-STD-202, Method 2Q8D for salderabllity. 2. Rammabllity: UL04V-0 â'¢3. ASTM oxygen index: > 2&% 4. Insulation System: Class F 155"C. UL
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OCR Scan
resistor 500 ohm E15155G XF5003-CS
Abstract: DESIGN UNITS' H B unac R R T MT IC (nn) ER [IN ES] CH - o REVISION FIRST ANGLE PROJECTION REV. BESCRPTIDN D TE A B Y. EC N . N O 8.0x(P-1)+4.8 NOTES: 1. Rating: UL 50A 600V IEC 41A 1000V PITCH: 8.0 mm 2. Insulation Withstand Voltage: AC 2000V for 1 minute 3. Insulation Resistance: Min 500MH at DC500V 4. Usable Temperature Range: â'" 40°C~ + 105â' C 5. RoHS compliant 6. Pole size and P/N refer to table below: p D SS6N -02P D SS6N -03P D SS6N -04P ITEM -
OCR Scan
L94-V0 OE/1201 ON/1204
Abstract: CURRENT (A) EOFF TURN-OFF ENERGY LOSS (µJ) RG = 10, L = 500mH, VCE = 390V 600 RG = 10, L = 500mH, VCE = , Loss vs Collector to Emitter Current 40 RG = 10, L = 500mH, VCE = 390V 35 trI , RISE TIME (ns) 30 25 , ) Figure 14. Gate Charge 1.2 RG = 10, L = 500mH, VCE = 390V, VGE = 15V 10 TJ = 125oC, L = 500µH Fairchild Semiconductor
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FGH30N6S2 FGP30N6S2 FGB30N6S2 TA49367 FGB30N6S2T

30N6S2

Abstract: make full-bridge SMPS ) 400 RG = 10, L = 500mH, VCE = 390V 350 300 TJ = 125oC, VGE = 10V, VGE = 15V 250 200 150 100 TJ = 25oC, VGE = 10V, VGE = 15V 50 0 0 5 10 15 20 RG = 10, L = 500mH, VCE = 390V , Emitter Current 20 25 RG = 10, L = 500mH, VCE = 390V 14 35 12 10 TJ = 25oC, TJ = 125oC , 25, TJ = 25oC 14 0 16 0 2 4 6 8 RG = 10, L = 500mH, VCE = 390V, VGE = 15V
Fairchild Semiconductor
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30N6S2 make full-bridge SMPS FGP30N6S2D

30N6S2D

Abstract: ) EOFF TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) RG = 10, L = 500mH, VCE = 390V 600 RG = 10, L = 500mH, VCE = 390V 500 400 TJ = 125oC, VGE = 10V, VGE = 15V 300 200 100 TJ = 25oC , = 390V 14 Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current 30 RG = 10, L = 500mH , 500mH, VCE = 390V, VGE = 15V 10 TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
Fairchild Semiconductor
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30N6S2D FGH30N6S2D FGB30N6S2D TA49336 TA49390 FGB30N6S2DT
Abstract: 600 EOFF TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (mJ) 400 RG = 10â"¦, L = 500mH , = 15V 50 0 0 5 10 15 20 RG = 10â"¦, L = 500mH, VCE = 390V 500 400 TJ = 125oC , 25 RG = 10â"¦, L = 500mH, VCE = 390V 14 35 12 10 TJ = 25oC, TJ = 125oC, VGE = 10V 8 6 , 25â"¦, TJ = 25oC 14 0 16 0 2 4 6 8 RG = 10â"¦, L = 500mH, VCE = 390V, VGE = Fairchild Semiconductor
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PC2714

Abstract: PC2715 DATA SHEET ICS8430-61 Integrated ICS8430-61 500MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL Circuit 500MH Z , -3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER Integrated ICS8430-61 Systems, Inc. 500MH , C -TO-3.3V , LVPECL FREQUENCY SYNTHESIZER Integrated ICS8430-61 Systems, Inc. 500MH , C -TO-3.3V , SYNTHESIZER Integrated ICS8430-61 Systems, Inc. 500MH , C -TO-3.3V DIFFERENTIAL TSD LVPECL , -61 Systems, Inc. 500MH , C -TO-3.3V DIFFERENTIAL TSD LVPECL FREQUENCY SYNTHESIZER NOTE: Stresses beyond
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OCR Scan
PC2714 PC2715 UPC2714 PC271

500 mh inductor

Abstract: mh 180 , CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER 500MH , C -TO-3.3V DIFFERENTIAL TSD LVPECL , FREQUENCY SYNTHESIZER ICS8430-61 500MH , C -TO-3.3V DIFFERENTIAL TSD LVPECL FREQUENCY SYNTHESIZER , Z RYSTAL 500MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER 500MH , C -TO-3.3V , SYNTHESIZER 500MH , C -TO-3.3V DIFFERENTIAL TSD LVPECL FREQUENCY SYNTHESIZER Systems, Inc , ICS8430-61 Circuit Z RYSTAL 500MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER 500MH
Gowanda Electronics
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500 mh inductor mh 180 mh 600 inductors 2000 mH flammable 047T1005 047T2005 047T5005 047T1006 047T2006 047T5006
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