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Part Manufacturer Description PDF Samples Ordering
PDTC124EM T/R NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = 22 kOhm ri Buy
PIMD2 T/R NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 22 kOhm ri Buy
PDTA124EM T/R NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 22 kOhm ri Buy

db3 22 Datasheet

Part Manufacturer Description PDF Type Ordering
DB3-22 Continental Device India Limited Silicon DIAC Bidirectional Trigger Diode in DO-35 Glass Axial Package
ri

4 pages,
458.03 Kb

Original Buy
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db3 22

Catalog Datasheet Results Type PDF Document Tags
Abstract: Db3 Figure 7. Dual Bank Interleaving WRITE (BL=4) CLK Command ACT WRITE ACT tRCD , Reference Point 1. For GLT5160L16-6/7 GLT5160L16-6/7, the Output Load is 30 pF. DQ 1.4V Figure 22. Output Load , ACT B1 Da2 Da3 B0 Db0 Db1 WRITE B1 PRE Db2 Db3 PRE Figure 24. , ] Ya Yb Xa BA DQ Qa0 PRE READ Qa1 Db0 Db1 WRITE Db2 Db3 PRE , (Dual Bank) BL=4, CL=3 32 G-LINK Technology February 1999 (Rev.2) Db3 PRE CLK tRCD ... Original
datasheet

44 pages,
6422.07 Kb

GLT5160L16-10TC GLT5160L16 db3 22 GLT5160L16 abstract
datasheet frame
Abstract: 13 48 DB1+ 14 47 DB2­ 15 46 DB2+ 16 45 DB3­ 17 44 DB3+ 18 43 DB4­ , 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Figure 4. Pin Configuration Table , 43 44 45 46 47 48 49 50 51 52 53 54 DB4­ DB3+ DB3­ DB2+ DB2­ DB1+ DB1­ DB0+ , ) 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 DB10+ DB10­ DB9+ ... Original
datasheet

16 pages,
266.83 Kb

SDIO DB10 AD9726 datasheet abstract
datasheet frame
Abstract: NC A12 21 34 A9 A10 22 33 A8 A0 23 A1 24 32 A7 A2 25 30 A5 A3 26 29 A4 , Qa3 tAC Db0 Db1 Db2 Db3 tOH WE UDQM, LDQM Row Active Read Command Precharge Command , , A13 A10 WE CAS Latency=2 DQ Qa0 Qa1 Qa2 Qa3 Db0 Db1 Db2 Db3 A-Bank Precharge Start UDQM, LDQM CAS Latency=3 Qa0 Qa1 Qa2 Qa3 DQ Db0 Db1 Db2 Db3 tWR A-Bank Precharge Start , ) Row Active (A-Bank) 22/36 FEDD56V62162J-01 FEDD56V62162J-01 OKI Semiconductor MD56V62162J MD56V62162J Bank ... Original
datasheet

37 pages,
422.6 Kb

MD56V62162 md56v62160 active suspension MD56V62162J datasheet abstract
datasheet frame
Abstract: Write B K Clock K Clock R W BWX Address A B Data-In DB DB+1 DB+2 DB+3 , X Write A L H X L Din at K (t + 1) Din at K (t + 1.5) DB+3 Previous , (t+1) Abort Write LH H H H H DB+3 D9-17 D9-17 (t+1) Write Byte 2 DB+2 D0-8 , ) Abort Write LH H H DB+3 D9-17 D9-17 (t+1) Write All Bytes DB+2 D0-8 (t+1) Write , 22 Integrated Silicon Solution, Inc. Rev. 06/27/07 72 Mb (2M x 36 & 4M x 18) QUAD (Burst ... Original
datasheet

28 pages,
626.71 Kb

IS61QDB44M18-300M3 IS61QDB44M18 IS61QDB42M36-300M3 IS61QDB42M36 D0-35 datasheet abstract
datasheet frame
Abstract: 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 Ball FVBGA(8mmx8mm) 54 53 52 51 , A10/AP A10/AP Ra Rb tOH CL=2 Qa0 t R AC QC Qa2 Qa1 CL=3 Db1 Db2 Db3 , Qa2 Qa3 t S AC Db0 tS H Z *Note4 Db1 Db2 Db3 tRDL WE DQ M Row , Db3 Db0 Db1 Db2 Db3 DQ CL=3 Q a0 Qa3 WE DQM Row Active ( A - Bank , : Apr. 2007 Revision : 1.2 22/30 ESMT M52S32162A M52S32162A Write Interrupted by Precharge Command & ... Original
datasheet

30 pages,
766.27 Kb

M52S32162A M52S32162A abstract
datasheet frame
Abstract: VSSQ DQ3 DQ4 VCCQ DQ5 DQ6 VSSQ DQ7 VCC LDQM WE# CAS# RAS# Pin 19 20 21 22 23 24 , Note 4 t OH t SAC Qa1 Qa2 Db1 Db2 Note 4 Db3 t RDL Qa3 Db0 Db1 Db2 Db3 WE# DQM Row Active (A-Bank) Read (A-Bank) Precharge (A-Bank) Row , Qa1 Qa2 Qa3 Qa0 CL = 2 Qa1 Qa2 Db0 Db1 Db2 Db3 Db0 Db1 Db2 Db3 DQ CL = 3 Qa3 WE# DQM Row Active (A-Bank) Read with Auto Precharge (A-Bank ... Original
datasheet

26 pages,
896.27 Kb

WED416S16030A 100MHZ 100MHZ abstract
datasheet frame
Abstract: 35 17 34 18 33 BA 19 32 20 31 21 30 22 29 23 28 A3 , /AP Ra Rb tO H CL=2 Qa0 t R AC QC Qa2 Qa1 CL=3 Db1 Db2 Db3 , Qa3 t S AC Db0 tS H Z *Note4 Db1 Db2 Db3 tRDL WE DQ M Row Active (A- , Db3 Db0 Db1 Db2 Db3 DQ CL=3 Q a0 Qa3 WE DQM Row Active ( A - Bank , Semiconductor Memory Technology Inc. Publication Date : May. 2007 Revision : 1.1 22/29 ESMT ... Original
datasheet

29 pages,
609.66 Kb

M12S16161A-7TG M12S16161A-7BG M12S16161A M12S16161A abstract
datasheet frame
Abstract: 15 36 16 35 17 34 18 33 19 32 20 31 21 30 22 29 A6 , QC Qa2 Qa1 CL=3 Db1 Db2 Db3 *Note4 tRDL tO H Qa1 Qa0 t R AC , Db1 Db2 Db3 tRDL WE DQ M Row Active (A- Bank) Read (A- Ban k) Precharge , Db0 Db1 Db2 Db3 Db0 Db1 Db2 Db3 DQ CL=3 Q a0 Qa3 WE DQM Row , Date : Apr. 2007 Revision : 1.5 22/29 ESMT M52D16161A M52D16161A Burst Read Single bit Write Cycle ... Original
datasheet

29 pages,
752.2 Kb

M52D16161A-10TG M52D16161A-10BG M52D16161A M52D16161A abstract
datasheet frame
Abstract: 33 BA 19 32 20 31 A0 21 30 22 29 23 28 24 27 A4 VDD , Db1 Db2 Db3 *Note4 tRDL tOH Qa1 Qa0 t R AC *Note3 Db0 tS H Z t S AC *Note3 Qa3 Qa2 Qa3 t S AC Db0 tS H Z *Note4 Db1 Db2 Db3 tRDL WE DQ , Db3 Db0 Db1 Db2 Db3 DQ CL=3 Q a0 Qa3 WE DQM Row Active ( A - Bank , Semiconductor Memory Technology Inc. Publication Date : May. 2007 Revision : 1.5 22/29 ESMT ... Original
datasheet

29 pages,
751.02 Kb

M52S16161A-8TG M52S16161A-8BG M52S16161A-10TG M52S16161A M52S16161A abstract
datasheet frame
Abstract: DB3+ DB3­ DBVDD 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Figure 4. Pin , Disable (Active High) 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 , DB5+ DB5­ DB4+ DB4­ DB3+ DB3­ DBVDD Rev. PrA | Page 8 of 16 AD9725 AD9725 Preliminary ... Original
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16 pages,
263.21 Kb

DBCOM datasheet abstract
datasheet frame