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Part Manufacturer Description PDF Samples Ordering
VC10F22K Honeywell Sensing and Control VC Series, 22 kOhms, 10.0 W, Fixed, Wirewound Resistor ri Buy
VC5E22K Honeywell Sensing and Control VC Series, 22 kOhms, 5.0 W, Fixed, Wirewound Resistor ri Buy
FF-SBZROD22 Honeywell Sensing and Control Test rod for 22 mm [0.86 in] diameter resolution ri Buy

db3 22 Datasheet

Part Manufacturer Description PDF Type Ordering
DB3-22 Continental Device India Limited Silicon DIAC Bidirectional Trigger Diode in DO-35 Glass Axial Package
ri

4 pages,
458.03 Kb

Original Buy
datasheet frame

db3 22

Catalog Datasheet Results Type PDF Document Tags
Abstract: Db3 Figure 7. Dual Bank Interleaving WRITE (BL=4) CLK Command ACT WRITE ACT tRCD , Reference Point 1. For GLT5160L16-6/7 GLT5160L16-6/7, the Output Load is 30 pF. DQ 1.4V Figure 22. Output Load , ACT B1 Da2 Da3 B0 Db0 Db1 WRITE B1 PRE Db2 Db3 PRE Figure 24. , ] Ya Yb Xa BA DQ Qa0 PRE READ Qa1 Db0 Db1 WRITE Db2 Db3 PRE , (Dual Bank) BL=4, CL=3 32 G-LINK Technology February 1999 (Rev.2) Db3 PRE CLK tRCD ... Original
datasheet

44 pages,
6422.07 Kb

GLT5160L16-10TC GLT5160L16 db3 22 GLT5160L16 abstract
datasheet frame
Abstract: 13 48 DB1+ 14 47 DB2­ 15 46 DB2+ 16 45 DB3­ 17 44 DB3+ 18 43 DB4­ , 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Figure 4. Pin Configuration Table , 43 44 45 46 47 48 49 50 51 52 53 54 DB4­ DB3+ DB3­ DB2+ DB2­ DB1+ DB1­ DB0+ , ) 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 DB10+ DB10­ DB9+ ... Original
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16 pages,
266.83 Kb

SDIO DB10 AD9726 datasheet abstract
datasheet frame
Abstract: NC A12 21 34 A9 A10 22 33 A8 A0 23 A1 24 32 A7 A2 25 30 A5 A3 26 29 A4 , Qa3 tAC Db0 Db1 Db2 Db3 tOH WE UDQM, LDQM Row Active Read Command Precharge Command , , A13 A10 WE CAS Latency=2 DQ Qa0 Qa1 Qa2 Qa3 Db0 Db1 Db2 Db3 A-Bank Precharge Start UDQM, LDQM CAS Latency=3 Qa0 Qa1 Qa2 Qa3 DQ Db0 Db1 Db2 Db3 tWR A-Bank Precharge Start , ) Row Active (A-Bank) 22/36 FEDD56V62162J-01 FEDD56V62162J-01 OKI Semiconductor MD56V62162J MD56V62162J Bank ... Original
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37 pages,
422.6 Kb

MD56V62162 md56v62160 active suspension MD56V62162J datasheet abstract
datasheet frame
Abstract: Write B K Clock K Clock R W BWX Address A B Data-In DB DB+1 DB+2 DB+3 , X Write A L H X L Din at K (t + 1) Din at K (t + 1.5) DB+3 Previous , (t+1) Abort Write LH H H H H DB+3 D9-17 D9-17 (t+1) Write Byte 2 DB+2 D0-8 , ) Abort Write LH H H DB+3 D9-17 D9-17 (t+1) Write All Bytes DB+2 D0-8 (t+1) Write , 22 Integrated Silicon Solution, Inc. Rev. 06/27/07 72 Mb (2M x 36 & 4M x 18) QUAD (Burst ... Original
datasheet

28 pages,
626.71 Kb

IS61QDB44M18-300M3 IS61QDB44M18 IS61QDB42M36-300M3 IS61QDB42M36 D0-35 datasheet abstract
datasheet frame
Abstract: 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 Ball FVBGA(8mmx8mm) 54 53 52 51 , A10/AP A10/AP Ra Rb tOH CL=2 Qa0 t R AC QC Qa2 Qa1 CL=3 Db1 Db2 Db3 , Qa2 Qa3 t S AC Db0 tS H Z *Note4 Db1 Db2 Db3 tRDL WE DQ M Row , Db3 Db0 Db1 Db2 Db3 DQ CL=3 Q a0 Qa3 WE DQM Row Active ( A - Bank , : Apr. 2007 Revision : 1.2 22/30 ESMT M52S32162A M52S32162A Write Interrupted by Precharge Command & ... Original
datasheet

30 pages,
766.27 Kb

M52S32162A M52S32162A abstract
datasheet frame
Abstract: VSSQ DQ3 DQ4 VCCQ DQ5 DQ6 VSSQ DQ7 VCC LDQM WE# CAS# RAS# Pin 19 20 21 22 23 24 , Note 4 t OH t SAC Qa1 Qa2 Db1 Db2 Note 4 Db3 t RDL Qa3 Db0 Db1 Db2 Db3 WE# DQM Row Active (A-Bank) Read (A-Bank) Precharge (A-Bank) Row , Qa1 Qa2 Qa3 Qa0 CL = 2 Qa1 Qa2 Db0 Db1 Db2 Db3 Db0 Db1 Db2 Db3 DQ CL = 3 Qa3 WE# DQM Row Active (A-Bank) Read with Auto Precharge (A-Bank ... Original
datasheet

26 pages,
896.27 Kb

WED416S16030A 100MHZ 100MHZ abstract
datasheet frame
Abstract: 35 17 34 18 33 BA 19 32 20 31 21 30 22 29 23 28 A3 , /AP Ra Rb tO H CL=2 Qa0 t R AC QC Qa2 Qa1 CL=3 Db1 Db2 Db3 , Qa3 t S AC Db0 tS H Z *Note4 Db1 Db2 Db3 tRDL WE DQ M Row Active (A- , Db3 Db0 Db1 Db2 Db3 DQ CL=3 Q a0 Qa3 WE DQM Row Active ( A - Bank , Semiconductor Memory Technology Inc. Publication Date : May. 2007 Revision : 1.1 22/29 ESMT ... Original
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29 pages,
609.66 Kb

M12S16161A-7TG M12S16161A-7BG M12S16161A M12S16161A abstract
datasheet frame
Abstract: 15 36 16 35 17 34 18 33 19 32 20 31 21 30 22 29 A6 , QC Qa2 Qa1 CL=3 Db1 Db2 Db3 *Note4 tRDL tO H Qa1 Qa0 t R AC , Db1 Db2 Db3 tRDL WE DQ M Row Active (A- Bank) Read (A- Ban k) Precharge , Db0 Db1 Db2 Db3 Db0 Db1 Db2 Db3 DQ CL=3 Q a0 Qa3 WE DQM Row , Date : Apr. 2007 Revision : 1.5 22/29 ESMT M52D16161A M52D16161A Burst Read Single bit Write Cycle ... Original
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29 pages,
752.2 Kb

M52D16161A-10TG M52D16161A-10BG M52D16161A M52D16161A abstract
datasheet frame
Abstract: 33 BA 19 32 20 31 A0 21 30 22 29 23 28 24 27 A4 VDD , Db1 Db2 Db3 *Note4 tRDL tOH Qa1 Qa0 t R AC *Note3 Db0 tS H Z t S AC *Note3 Qa3 Qa2 Qa3 t S AC Db0 tS H Z *Note4 Db1 Db2 Db3 tRDL WE DQ , Db3 Db0 Db1 Db2 Db3 DQ CL=3 Q a0 Qa3 WE DQM Row Active ( A - Bank , Semiconductor Memory Technology Inc. Publication Date : May. 2007 Revision : 1.5 22/29 ESMT ... Original
datasheet

29 pages,
751.02 Kb

M52S16161A-8TG M52S16161A-8BG M52S16161A-10TG M52S16161A M52S16161A abstract
datasheet frame
Abstract: DB3+ DB3­ DBVDD 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Figure 4. Pin , Disable (Active High) 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 , DB5+ DB5­ DB4+ DB4­ DB3+ DB3­ DBVDD Rev. PrA | Page 8 of 16 AD9725 AD9725 Preliminary ... Original
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16 pages,
263.21 Kb

DBCOM datasheet abstract
datasheet frame