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DS1013 10-35-35 MOTOROLA Maxim Integrated Products 3-in-1 Silicon Delay Line ri Buy
DS1013K-10/MOTOROLA Maxim Integrated Products 3-in-1 Silicon Delay Line ri Buy
DS1013K-100 MOTOROLA Maxim Integrated Products 3-in-1 Silicon Delay Line ri Buy

MOTOROLA TRANSISTOR

Catalog Datasheet Results Type PDF Document Tags
Abstract: SEMICONDUCTOR TECHNICAL DATA MOTOROLA MRFQ17 MRFQ17 The RF Line IMPN Silicon High Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B or C output driver or pre-driver stages in VHF and UHF. · · · · , V V V nA nA (continued) _ - 100 100 - _ MOTOROLA RF DEVICE DATA 2-1063 MRFQ 17 , e 12.5 13 - 23 -4 2 -4 7 -4 9 -51 -7 0 -8 3 -9 5 - MOTOROLA RF DEVICE DATA 2-1064 ... OCR Scan
datasheet

2 pages,
39.71 Kb

transistor tic 2250 MRFQ17 MRFQ17 abstract
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Abstract: 646-06 TO-116 TYPE A TYPE B 9 8 Each Transistor Total Device D issipation (« T a = 25°C Derate , QUAD COMPLEMENTARY PAIR TRANSISTORS NPN/PNP SILICON This is a Motorola designated preferred device. , *T Cobo - 50 - - MHz pF - 1.2 1.8 4.0 4.0 Rev 2 Motorola Small-Signal , 2.0%. h F E 1% E 2 |VBE1-VßE2l 0.8 - ~ 1.0 20 m Vdc - 2-254 Motorola ... OCR Scan
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2 pages,
45.57 Kb

datasheet abstract
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Abstract: 2 E m itte r r 0JA 417 - 55 to + 150 T j- Tsta GENERAL PURPOSE TRANSISTOR NPN SILICON *T h is is a Motorola designated preferred device. Refer to 2N3903 2N3903 for graphs. *FR-5 = 1 ,0 * 0.75 , Duty Cycle 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data 2 -1 7 9 M , /¿mhos dB 35 35 200 50 ns ns ns - - 2-180 Motorola Small-Signal Transistors, FETs and ... OCR Scan
datasheet

2 pages,
48.08 Kb

BT3904 datasheet abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview Internally Clamped N-Channel IGBT This Logic Level Insulated G ate Bipolar Transistor (IG B T ) features G ate-E m itte r E S D protection, Gate Collector O v e rVoltage Protection from monolithic circuitry for usage as an Ignition Coil , subject to change without notice. 4-82 Motorola IGBT Device Data M GP15N38CL GP15N38CL ELECTRICAL , Motorola IGBT D evice Data 4 -8 3 ... OCR Scan
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2 pages,
70.87 Kb

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Abstract: IE E D § t3fci72SM 0007202 S | MOTOROLA T 'il'lf MOTOROLA SC XS RS/R F TECHNICAL DATA The RF Line SE M IC O N D U C T O R MMBR4957 MMBR4957 Die Source Same as 2N4957 2N4957 P N P S ilic o n H ig h Fre qu e n cy T ra n sisto r . . . d e sig n e d fo r h igh -gain , lo w -n o ise am plifier , 'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. RF AMPLIFIER TRANSISTOR P N P S IL IC O N Sym bol , bFE 20 150 - - 0.8 - 3.0 (Typ) MHz pF dB dB Gpe NF - ·MOTOROLA RF DEVICE ... OCR Scan
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1 pages,
68.76 Kb

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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1030 MRF1030 UHF Power IVansistor . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1.0 GHz. · Designed for , POWER TRANSISTOR NPN SILICON Symbol V cEO Vc b O vebo pd Value 30 60 4.0 29 0.167 200 -6 5 t o , dB No Degradation in Output Power MOTOROLA RF DEVICE DATA MRF1030 MRF1030 2-567 TYPICAL , -169 -169 -169 Table 1. Common Emitter S-Parameters MRF1030 MRF1030 2-568 MOTOROLA RF DEVICE DATA ... OCR Scan
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2 pages,
56.51 Kb

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Abstract: MOTOROLA TECHNICAL DATA SEM ICO NDUCTOR IRF240 IRF240 IRF241 IRF241 IRF243 IRF243 TMOS POWER FETs 16 and 18 AMPERES rDS(on) = OHM 150 and 200 VOLTS rDS(on) = 0.22 OHMS 150 VOLTS Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for low voltage, high , Soldering Purposes, 1/8" fro m Case fo r 5 Seconds R»JC R&j a tl 1 30 300 °C/W °C MOTOROLA TMOS , (Typ) J _ - nH nH MOTOROLA TMOS POWER MOSFET DATA 3-102 ... OCR Scan
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2 pages,
69.79 Kb

mosfet IRF240 IRF241 IRF240 IRF243 IRF240 abstract
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Abstract: RF AMPLIFIER TRANSISTOR PN P S ILIC O N THERMAL CHARACTERISTICS Characteristic Therm al R esistan ce, Ju n c tio n to A m bient Sym bol r Max 357 Unit ; C/W T h is is a Motorola , - - 0.85 0.65 MHz pF pF - - MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-356 , ) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-357 ... OCR Scan
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2 pages,
49.6 Kb

MPSH81 MPSH81 abstract
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Abstract: MOTOROLA ^ SC (XSTRS/R ,vrT B W R ir \ F) ULF ]) » b3b7254 G a s a li D MOTb MOTOROLA SEMICONDUCTOR h h h h h h i h h TECHNICAL DATA MD3468HX MD3468HX, HXV (DUAL) . MD3468FHXV MD3468FHXV (DUAL) MHQ3468HX MHQ3468HX, HXV (QUAD) MQ3468HXV MQ3468HXV (QUAD) PNP Silicon Dual/Quad Small-Signal , Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO Ve b o 'C Each Transistor , DATA 3-195 MOTOROLA SC (XSTRS/R F) 4bE » b3b7254 00*120* 12 2 «flO ... OCR Scan
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2 pages,
124.52 Kb

MQ3468 transistor 342 G datasheet abstract
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Abstract: MPQ2483 MPQ2483 MPQ2484 MPQ2484* M A X IM U M RATIN G S Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO Ve b o Value 40 60 6.0 50 Each Transistor , °C NPN SILICON *T h is Is a Motorola designated preferred device. 900 7.2 mW mW/°C 1 Unit Vdc Vdc , 0.5 Vdc - - 0.7 0.8 v BEisat) 2-236 Motorola Small-Signal Transistors, FETs and Diodes , *= 300 ms . 10 k ohms, 2.0%. MPQ2483 MPQ2483 MPQ2484 MPQ2484 - 3.0 2.0 - Duty Cycle Motorola ... OCR Scan
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2 pages,
42.68 Kb

MPQ2483 MPQ2484 MPQ2483 abstract
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