NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (Figure 2) consists ot an N-channel, P-channel and N-channel MOSFET in series, as opposed to the transmission gate configuration with an N and P-channel device in parallel. The series N-P-N switch offers , present a high impedance when power is off. This is achieved by a switch cell with three MOSFET's in , 350U OV ±5V ±10» ±15V ±20V POWER SUPPLY VOLTAGES 4-20 HI-50BL HI-50BL TEST CIRCUITS TEST CIRCUIT NO. , Latches (RSj TTL/DTL and CMOS Compatible Failsafe for conditions of Overvoltage & Loss of Power • No SCR ... | OCR Scan |
9 pages, |
HI-507L HI-506L HI-506L/HI-507L HI-506L/HI-507L abstract |
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| Abstract: Co-packaged HEXFETâ•¥ Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET , Vr ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com IRF7422D2 IRF7422D2 Power Mosfet Characteristics 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V , On-Resistance Vs. Temperature 3 A IRF7422D2 IRF7422D2 Power Mosfet Characteristics V GS C is s C rs s C o ss , ) Fig 8. Maximum Safe Operating Area www.irf.com IRF7422D2 IRF7422D2 Power Mosfet Characteristics Thermal ... | Original |
8 pages, |
IRF7422D2 91412J 91412J abstract |
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| Abstract: PD- 91412J 91412J IRF7422D2 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFETо Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET , International Rectifier Power MOSFET's ) 2 www.irf.com IRF7422D2 IRF7422D2 Power Mosfet Characteristics 100 , On-Resistance Vs. Temperature 3 IRF7422D2 IRF7422D2 Power Mosfet Characteristics V GS C is s C rs s C o ss , , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7422D2 IRF7422D2 Power Mosfet ... | Original |
8 pages, |
IRF7422D2 91412J 91412J abstract |
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| Abstract: two sets of back-to-back N-channel MOSFET switches to route power to the input of a low voltage , Switching The LTC1473L LTC1473L drives external back-to-back N-channel MOSFET switches to direct power from two , P-channel counterparts.) two switch pairs, SW A1/B1 and SW A2/B2 during the transitions. Figure 2 shows , eliminates the problems associated with the inherent body diodes in power MOSFET switches and allows each , than any of the three main power source voltages to allow the control of N-channel MOSFET switches. ... | Original |
16 pages, |
Si4936DY MBRS130LT3 LTC1473LCGN LTC1473L BAT54C Top Marking GA2 LTC1473L abstract |
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| Abstract: QS5U26 QS5U26 Transistor 2.5V Drive Pch+SBD MOS FET QS5U26 QS5U26 Structure Silicon P-channel MOS FET , Transistor Absolute maximum ratings (Ta=25癈) Symbol VDSS VGSS ID IDP 1 IS ISP 1 Tch , IFSM 2 Tj Limits 30 20 0.5 2.0 125 Unit V V A A 癈 Parameter Total power , Channel temperature Parameter Range of strage temperature Unit W , characteristics (Ta=25癈) Parameter Symbol Min. IGSS Gate-source leakage - Drain-source breakdown ... | Original |
5 pages, |
QS5U26 QS5U26 abstract |
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| Abstract: controlling larger surge currents effectively. The on-resistance of the p-channel MOSFET adversely affects , Smallest 20-V and 30-V common drain n-channel and 20-V common drain p-channel devices, ideal for Li-Ion , TrenchFET® p-channel silicon technology to provide lower on-resistance. The thermally designed PowerPAK , Vishay Siliconix power MOSFET portfolio, we highly recommend that you visit our website, that is , 0.65 7 150 20 0.84 5 150 11 Power MOSFET Packages* MICRO FOOT PowerPAK ... | Original |
16 pages, |
vishay resistances guide Si4927DY Si6866BDQ Si6874EDQ Si6880AEDQ Si6965DQ Si6968ADQ Si6968BEDQ SI8901 Si9371 nimh spice model charge Si6875DQ Si8901EDB power selector guide datasheet abstract |
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| Abstract: PD - 90863A IRFL9014 IRFL9014 HEXFETо Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of , improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than , Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)* Linear Derating Factor Linear , 250â•¡A VDS = -25V, ID = 1.1A VDS = -60V, VGS = 0V VDS = -48V, VGS = 0V, TJ = 125â-'C VGS = -20V VGS = ... | Original |
8 pages, |
AN-994 IRFL9014 IRFL9014 abstract |
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| Abstract: International Rectifier PD-9.519E IRFR9110 IRFR9110 HEXFET® Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Surface Mount {1RFR9110 1RFR9110) • Straight Lead (IRFU9110 IRFU9110) • Available in Tape & Reel • P-Channel , applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. , Continuous Drain Current, Vgs @ -10 V. -2.0 A I DM Pulsed Drain Current © -12 Pd @ Tc = 25°C Power Dissipation 25 W PD @ TA = 25°C Power Dissipation (PCB Mount)*4 2.5 Linear Derating Factor 0.20 W/'C ... | OCR Scan |
6 pages, |
IRFU9110 IRFR9110 AN-994 1RFR9110 IRFR9110 abstract |
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| Abstract: International S Rectifier PD-9.520D IRFR9120 IRFR9120 HEXFET® Power MOSFET • Dynamic dv/dt Rating • , P-Channel • Fast Switching Description Third Generation HEXFETs from International Rectifier provide the , techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power , Drain Current © -22 PD @ Tc = 25°C Power Dissipation 42 W PD @ TA = 25°C Power Dissipation (PCB , -500 Vds=-80V, Vgs=0V, Tj=125°C Igss Gate-to-So uree Forward Leakage - - -100 nA Vgs=-20V ' • ... | OCR Scan |
6 pages, |
IRFU9120 IRFR9120 AN-994 IRFR9120 abstract |
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| Abstract: PD - 90864A IRFL9110 IRFL9110 HEXFETо Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of , improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than , Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)* Linear Derating Factor Linear , 250â•¡A VDS = -50V, ID = 0.66 A VDS = -100V -100V, VGS = 0V VDS = -80V, VGS = 0V, TJ = 125â-'C VGS = -20V ... | Original |
8 pages, |
IRFL9110 AN-994 IRFL9110 abstract |
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