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RH73X2A33GKTN (1625862-3) TE Connectivity (1625862-3) RH73 2A 33G 10% 1000PPM visit TE Connectivity

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50 33g

Catalog Datasheet MFG & Type PDF Document Tags

50 33g

Abstract: TRIO TA 80W < o o -H < 50 33g f -O o H -|í ti Oí -©H-O L M S -ÌP < r " Il » Ko f Il 11 w # to I J? = O , P0(2) Vqc = ±32V, f = 20Hz to 20kHz, THD = 0.4% 50 55 - w L,H P0(3) Vcc = d21 V, f = 1kHz-THD = 1 -0%. \ = 3ii 25 30 - w C P0(4) Vcc = ±26V, f = 1kHz, THD = 1.0%, RL = 3Q 50 55 - w Total harmonic , lcco(1) VCC = ±30V 20 60 100 mA C lcco(2) Vcc = ±39V 10 30 50 mA Neutral voltage L, R VN(1) Vcc = , -130 STK401-330 100W x 2 ±£5.0 - ±45.0 - STK401-140 STK401-340 120Wx2 ±74.0 - ±51.0 - STK400
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OCR Scan
STK400-490 50 33g TRIO TA 80W stk*0460 600 DKZ 15Wx2 5247 STK400-X00 STK401-X00

50 33g

Abstract: MAX5954 3 4 5 6 7 8 N.C. N.C. N.C. N.C. 3.3VAUXIN 3.3VAUXO PWRGD FAULT 3.3G 9 , ) 12S, 12S-, 3.3G .-0.3V to (V12VIN + 0.3V) 3.3VAUXIN, ON, FAULT , = 3.3V, PWRGD = FAULT = PORADJ = TIM = OUTPUT = 12G = 3.3G = OPEN, INPUT = PRES-DET = PGND = GND , regulation, V12VIN - V12S_ 1V, V12G_= 5V 50 120 180 mA I12G = 1µA 4.8 5.3 5.8 V Referred to V12VIN, I12G_ = 1µA (Note 2) 3.0 4 4.8 V 1 V12GH 5 50 µA 20
Maxim Integrated Products
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MAX5954 FON QFN Thermal Shut Down Functioned MOSFET 2105w MAX5954AETX T3666-3 MAX5954LETX 5M-1994 SPP-012

CR0402-16W-000T

Abstract: 74LVTH241 Preliminary Rev. 0.5 35 Si4133/33G-EVB Figure 49. Si4136BT Component Figure 50. Si4136BT Ground , Si4133/33G-EVB EVALUATION BOARD FOR THE SYNTHESIZER FAMILIES Description The Si4133/Si4133G , Rev. 0.5 4/01 Copyright © 2001 by Silicon Laboratories Si4133/33G-EVB-05 Si4133/33G , the synthesizers are ac-coupled and matched to a 50 load impedance. SMA connectors are provided for , , Vc, is fixed at 2 Preliminary Rev. 0.5 Si4133/33G-EVB AUXOUT The AUXOUT pin of the
Silicon Laboratories
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CR0402-16W-000T 74LVTH241 Header 13X2 RA2EJ2-6G RTVY-174 si4135 4133/33G-EVB 4133/S 4133G 4133G-X2 4113G-X5 4114G

50 33g

Abstract: Si4133/33G-EVB E VALUATION B OA RD F O R T H E S YNTHESIZER F AMILIES Description The Si4133 , 11/11 Copyright © 2011 by Silicon Laboratories Si4133/33G-EVB Si4133/33G-EVB Functional , the synthesizers are ac-coupled and matched to a 50  load impedance. SMA connectors are provided , provides filtering for 2 Rev. 0.6 Si4133/33G-EVB AUXOUT The AUXOUT pin of the frequency , PWDNB provided by external generator connected to PWDNB/GND test points. Rev. 0.6 3 Si4133/33G
Silicon Laboratories
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50 33g on

Abstract: FON QFN 50 150 250 µA 3.3G_ Gate Discharge Current I3.3G_DIS Output short-circuit , _ = VFON_ = 3.3V, PWRGD_ = FAULT_ = PORADJ = TIM = OUTPUT_ = 12G_ = 3.3G_ = OPEN, INPUT_ = PRES_DET , , V12G_ = 2V 50 150 250 µA 12G_ Gate Discharge Current I12G_DIS Output short-circuit condition, strong gate pulldown to regulation, V12VIN - V12S_ 1V, V12G_= 5V 50 120 180 mA , 3.3G_ = OPEN, INPUT_ = PRES_DET_ = PGND = GND, TA = -40°C to +85°C, unless otherwise noted. Typical
Maxim Integrated Products
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MAX5946AETX MAX5946LETX MAX5946 50 33g on 12VIN MAX7313ATG 16-BIT
Abstract: Features â'¢ 50 MHz EDO performance â'¢ 256K x 16 Multiport Video RAM â'¢ FLASH WRITE with WPBM- 512 , can be loaded using the Load Mask Register (LMR) cycle. 33G 0307 M M D V 0 1 D S U -0 3 R e v is , Assignments RE CÃ' V CC E TRG l _ 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 ,   33G 0307 M M D V 0 1 D S U -0 3 R e v is e d 1 1 /9 5 IBM025160 IBM025161 IBM025170 , possible 256 starting locations for the next Serial Read/Write cycle for the Serial port. 33G 0307 M M -
OCR Scan
IBM025171 SSOG-64 DV01D SU-03

025161LG5D-60

Abstract: CD 4751 x 16 Multiport Video RAM â'¢ 50 MHz EDO performance â'¢ Performance: â'¢ FLASH WRITE with W , ) mode with a stop address of 128 bit (or less). 33G 0307 SA14-4751 -05 Revised 3/98 Unique , 25 26 27 28 29 30 31 32 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 , â¡ p LCE, UCE JRow Enable 33G 0307 SA14-4751 -05 Revised 3/98 IBM025160 IBM025170 , possible 256 starting locations for the next Serial Read/Write cycle for the Serial port. 33G 0307
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025161LG5D-60 CD 4751 025170LG5D-60 025161LG5D-6H
Abstract: Datasheet R8C/33G Group, R8C/33H Group RENESAS MCU 1. R01DS0091EJ0100 Rev.1.00 Jul. 05, 2011 Overview 1.1 Features The R8C/33G Group, R8C/33H Group of single-chip MCUs , , reduces the number of system components. The R8C/33G Group has data flash (1 KB × 4 blocks) with the , Rev.1.00 Jul. 05, 2011 Page 1 of 54 R8C/33G Group, R8C/33H Group 1.1.2 1. Overview Specifications Tables 1.1 and 1.2 outline the Specifications for R8C/33G Group. Tables 1.3 and 1.4 outline the Renesas Electronics
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R8C/33G

R5F21334HJFP

Abstract: R5F21336GJFP Datasheet R8C/33G Group, R8C/33H Group RENESAS MCU R01DS0091EJ0100 Rev.1.00 Jul. 05, 2011 1. 1.1 Overview Features The R8C/33G Group, R8C/33H Group of single-chip MCUs incorporates the R8C , system components. The R8C/33G Group has data flash (1 KB × 4 blocks) with the background operation (BGO , Page 1 of 54 R8C/33G Group, R8C/33H Group 1. Overview 1.1.2 Specifications Tables 1.1 and 1.2 outline the Specifications for R8C/33G Group. Tables 1.3 and 1.4 outline the Specifications
Renesas Electronics
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R5F21334HJFP R5F21336GJFP

R5F21334

Abstract: R5F21336 /33G Group, R8C/33H Group RENESAS MCU 1. REJ03B0306-0010 Rev.0.10 Jul. 21, 2010 Overview 1.1 Features The R8C/33G Group, R8C/33H Group of single-chip MCUs incorporates the R8C CPU core , of system components. The R8C/33G Group has data flash (1 KB × 4 blocks) with the background , document are tentative and subject to change. R8C/33G Group, R8C/33H Group 1.1.2 1. Overview Specifications Tables 1.1 and 1.2 outline the Specifications for R8C/33G Group. Tables 1.3 and 1.4 outline the
Renesas Electronics
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R5F21334 R5F21336 PLQP0032GB-A R5F21336HJFP 2C46 r5f21334h

MAX5946

Abstract: MAX5946AETX 50 150 250 µA 3.3G_ Gate Discharge Current I3.3G_DIS Output short-circuit , _ = VFON_ = 3.3V, PWRGD_ = FAULT_ = PORADJ = TIM = OUTPUT_ = 12G_ = 3.3G_ = OPEN, INPUT_ = PRES_DET , , V12G_ = 2V 50 150 250 µA 12G_ Gate Discharge Current I12G_DIS Output short-circuit condition, strong gate pulldown to regulation, V12VIN - V12S_ 1V, V12G_= 5V 50 120 180 mA , 3.3G_ = OPEN, INPUT_ = PRES_DET_ = PGND = GND, TA = -40°C to +85°C, unless otherwise noted. Typical
Maxim Integrated Products
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SI7448DP-T1

LM 33G

Abstract: 50 33g 256K x 16 Multiport Video RAM · Performance: Param eter 50 MHz EDO performance FLASH WRITE with , Mask Register (LMR) cycle. 33G 0307 S A 1 4 -4 7 5 1 -0 5 R evised 3 /9 8 © IBM C orporation , SD Q 12 53 P D Q 1 2 52 - IV s s 51 SDQ11 50 P D Q 1 1 49 S D Q 10 48 I D Q 10 47 P V cc 46 SDQ9 , , UCE P NC P A0 I A1 P A2 P A3 IV s s 33G 0307 S A 1 4 -4 7 5 1 -0 5 R e v is e d 3 /9 8 , Serial port. 33G 0307 S A 1 4 -4 7 5 1 -0 5 R e v is e d 3 /9 8 ©IBM Corporation, 1995. All rights
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LM 33G AX135

pcie Design guide

Abstract: 12v output CIRCUIT DIAGRAM ) 12S_+, 12S_-, 3.3G_ .-0.3V to (V12VIN + 0.3V) 3.3VAUXIN, ON_, FAULT , 12G_ = 3.3G_ = OPEN, INPUT_ = PRES-DET_ = PGND = GND, TA = TJ = -40°C to +85°C, unless otherwise , 13.2V 1 2.5 mA 49 54 59 mV V12G_ = GND 4 5 6 µA 50 150 250 , _ = 3.3G_ = OPEN, INPUT_ = PRES-DET_ = PGND = GND, TA = TJ = -40°C to +85°C, unless otherwise noted , .3G_ = 2V 50 150 250 µA Output short-circuit condition, strong gate pulldown to
Maxim Integrated Products
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MAX7313 pcie Design guide 12v output CIRCUIT DIAGRAM 12v regulated power supply 3SB diode IRF N-Channel Power MOSFETs pcie MAX5959/MAX5960 12SD- 12SC- MAX5959 MAX5960

resistor b 33g

Abstract: _-, 3.3G_ .-0.3V to (V12VIN + 0.3V) 3.3VAUXIN, ON_, FAULT_, PWRGD , VFON_ = 3.3V, PWRGD_ = FAULT_ = PORADJ = TIM = OUTPUT_ = 12G_ = 3.3G_ = OPEN, INPUT_ = PRES-DET_ = PGND , , (V12S+ - V12S-) 1V, V12G_ = 5V I12G_ = 1µA Referred to V12VIN, I12G_ = 1µA (Note 2) 49 4 50 54 5 150 59 , PORADJ = TIM = OUTPUT_ = 12G_ = 3.3G_ = OPEN, INPUT_ = PRES-DET_ = PGND = GND, TA = TJ = -40°C to +85°C , Current-Limit Threshold (V3.3S_+ - V3.3S_-) 3.3G_ Gate Charge Current V3.3ILIM I3.3G_,CHG V3.3G_ = GND Normal
Maxim Integrated Products
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resistor b 33g 12SA12SA 12SD12GD TQFP12

T5677-1

Abstract: MAX5957 ) 12S_+, 12S_-, 3.3G_ .-0.3V to (V12VIN + 0.3V) 3.3VAUXIN, ON_, FAULT , 3.3G_ = OPEN, INPUT_ = PRES-DET_ = PGND = GND, TA = TJ = -40°C to +85°C, unless otherwise noted , turn-off, ON_ = GND, V12G_ = 2V 12V Supply Current Hysteresis 50 150 250 µA Output , 3.3G_ = OPEN, INPUT_ = PRES-DET_ = PGND = GND, TA = TJ = -40°C to +85°C, unless otherwise noted , .3G_ = 2V 50 150 250 µA Output short-circuit condition, strong gate pulldown to
Maxim Integrated Products
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T5677-1 MAX5957 qfn 48l MAX5957/MAX5958 MAX5957/ MAX5958

marking 27G

Abstract: SS6638-30G SS6638-27G 42 SS6638-30G 50 SS6638-33G Supply Current UNIT 60 SS6638-45G 2 , 150 175 50 200 0 25 50 75 Output Current (mA) Fig. 26 SS6638-33G Load , CIRCUIT VIN VOUT L1 100µH + C1 SW 22µF D1 SS12 SS6638-27G SS6638-30G SS6638-33G , 27: 2.7V 30: 3.0V 33: 3.3V 45: 4.5V 50: 5.0V Example: SS6638-27GXTR 2.7V output in , -27G SS6638-30G SS6638-33G SS6638-45G VOUT SS6638-50G + C2 47µF GND Fig. 1 Test Circuit 1 IS
Silicon Standard
Original
marking 27G Step-up DC/DC Converter marking sot-23 diode MARKING 30g marking we sot-23 sot-23 MARKING GU Step-up DC/DC Converter sot-23-3 SS6638G SS6638-33G
Abstract: 50 150 250 µA 3.3G_ Gate Discharge Current I3.3G_DIS Output short-circuit , 12G_ = 3.3G_ = OPEN, INPUT_ = PRES_DET_ = PGND = GND, TA = -40°C to +85°C, unless otherwise noted , µA Normal turn-off, ON_ = GND, V12G_ = 2V 50 150 250 µA 12G_ Gate Discharge , _ ≥ 1V, V12G_= 5V 50 120 180 mA 12G_ Gate High Voltage (V12G_ - V12VIN) V12G_H , 3.3G_ = OPEN, INPUT_ = PRES_DET_ = PGND = GND, TA = -40°C to +85°C, unless otherwise noted. Typical Maxim Integrated Products
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MAX5946L MAX5946A
Abstract: (HMC) Package Type Power Rating (Watts) @ 70°C 0.063W 0.1W 0.125W Maximum Working Voltage* 50 150 200 , /°C ±1500 ppm/°C ±500 ppm/°C ±1500 ppm/°C Ohmic Range and Tolerance 10% 43M ­ 1G 1.2G ­ 3.3G 43M ­ 1G 1.2G ­ 4.7G 43M ­ 1G 1.2G ­ 4.7G 20% 43M ­ 1G 1.2G ­ 3.3G 43M ­ 1G 1.2G ­ 4.7G 43M ­ 1G 1.2G ­ 4.7G , Rating (Watts) @ 70°C 0.063W 0.1W 0.125W Maximum Working Voltage* 50 150 200 Maximum Overload Voltage 100 , /°C ±1500 ppm/°C Ohmic Range and Tolerance 10% 43M ­ 1G 1.2G ­ 3.3G 43M ­ 1G 1.2G ­ 4.7G 43M ­ 1G 1.2G Stackpole Electronics
Original
15VDC
Abstract: subject to change without notice. Si41 33G-X2 S I L I C O N L A B O R A T O R I E S Si4133G-X2 , . 32 4 3 S I L I C O N L A B O R A T O R I E S S i 4 1 33G-X2 Electrical Specifications , SCLK, SDATA, SENB, PWDNB and XIN. 4 S I L I C O N L A B O R A T O R I E S Si41 33G-X2 Table , Ì 4 1 33G-X2 Table 4. Serial Interface Timing (VD = 2.7 to 3.6 V, Ta = -2 0 to 85°C) D S ym b , '" ns SCLK Rise Time tr Figure 1 â'" â'" 50 ns SCLK Fall Time tf Figure 1 -
OCR Scan
GSM900 DCS1800 PCS1900

trw rf

Abstract: ACRIAN 125 125 125 135 135 140 140 512M 3.1G 3.3G 3.5G 1.2G 1.2G 1.5G 1.8G 1.2G 1.1G 400M 400M 400M 400M 400M 500M 500M 470M 6.3 5.6 5.2 55 60 55 50 25 25 40 35 30 65 470M 3.1G 3.3G 3.5G 9.0 5.7 5.7 5.7 2.5 2.5 12 , foac Max (Hz) Gp (dB) Po (W) N.F. at fT··t (Hz) Ie Max JA) Mati. (Vl 36 50 50 50 60 60 50 50 40 50 jdB) Toper Max jOe) Package Style UHFIMicrowave Transistors , MKB12100W5 BAL0204·50 UMIL60 UMIL70 2N6439 C2M70·28R BAL0105·50 0105·50 CM60·12A Acrianlnc PhilipsElec
Short Form Catalog
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trw rf ACRIAN trw rf transistors trw transistors acrian inc TRW MICROWAVE UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 OME30L
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