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5/18F

Catalog Datasheet MFG & Type PDF Document Tags

battery CR2032

Abstract: 50°C) ±5% ±1.8°F/1°C 0.1%RH 0.1°C or °F One lithium battery (CR2032) 5.7x 1.2 x 1" (145 x 30 x 25mm
Extech Instruments
Original
battery CR2032 445580-NIST RH300-CAL
Abstract: 1D513#30;DD5#22;C class="hl">5 1#16;8F 1-8FC2B,1-2C#25;1 ; /#26;#23;#29;-7#20;#31;*7#29;*3#20;2#29;*5*,6#31;. 3#18;#17;B9#21;.7 #27;595B4318B1C#25;51 , #19;#20;#21;./#21;#19;18F1 # ;. #20;#21;#27;#17;.#19;3#21;4 1C8873#23;1 #30;#18;#19;84#18;#19;9. #19;F8 OLIMEX
Original
77789A9BCDE9F 12345612314565789A5BC1D8EF41 192B1 8BCF8775F 12C31 1EB41
Abstract: : ~404g (0.89lbs) MikroElektronika 5 1 2 3 4 5 6 7 8 9 page LV 18F , you want to learn more about our products, please visit our website at www.mikroe.com LV 18F v6 , LV 18F v6 Development System TABLE OF CONTENTS Introduction to LV 18F v6 Development System , . 5 1.0. Connecting the System to a PC , . 25 MikroElektronika page 4 LV 18F v6 Development System Introduction to LV 18F v6 MikroElektronika
Original

multiplexeur

Abstract: AFFICHEUR LCD 16 internet: www.mikroe.com LV 18F v6 â"¢ COPYRIGHT ET LIMITES DE RESPONSABILITE: Cet environnement , Système de développement LV 18F v6 TABLE DES MATIERES Présentation du système de développement LV 18F v6 . 4 Caractéristiques , . 5 1.0. Connexion au PC , . 25 MikroElektronika page #24; Système de développement LV 18F v6 Présentation du
MikroElektronika
Original
multiplexeur AFFICHEUR LCD 16

SCK 222 voltaje

Abstract: teclado USB EasyLV-18F v6 Todos los sistemas de desarrollo de MikroElektronika son unas herramientas , desarrollo EasyLV-18F v6 TABLA DE CONTENIDO Introducción al sistema de desarrollo EasyLV-18F v6 , . 5 1.0. Conexión del sistema a PC , ) . 30 MikroElektronika página 4 Sistema de desarrollo EasyLV-18F v6 Introducción al sistema de desarrollo EasyLV-18F v6 El sistema de desarrollo EasyLV-18F v6â"¢ proporciona un entorno de
MikroElektronika
Original
SCK 222 voltaje teclado USB interruptor zumbador resistencia 10K LV-18F 8051B LV18FJ LV2433A LV32MX PIC32MX4
Abstract: ¥ www.mikroe.com LV 18F v6 BEGRÃ"NSNINGAR I ANVÃ"NDNINGEN TILL VÃRA VÃ"RDEFULLA KUNDER Jag vill , ©MikroelektronikaTM, 2009, Samtliga rättigheter förbehÃ¥lles. #24; sida LV 18F v6 Utvecklingssystem INNEHÃLL Inledning till LV 18F v6 utvecklingssystem , . 5 1.0. Anslutning av systemet till datorn , . 25 MikroElektronika sida #24; LV 18F v6 Utvecklingssystem Inledning till LV 18F v6 MikroElektronika
Original
Abstract: you want to learn more about our products, please visit our website at www.mikroe.com EasyLV-18F v6 , EasyLV-18F v6 Development System TABLE OF CONTENTS Introduction to EasyLV-18F v6 Development System , . 5 1.0. Connecting the System to a PC , ) . 30 MikroElektronika page #24; EasyLV-18F v6 Development System Introduction to EasyLV-18F v6 Development System The EasyLV-18F v6â"¢ development system provides a development environment for MikroElektronika
Original
PICPLC16

puente de diodos

Abstract: CONECTOR P4 saber más de nuestros productos, por favor visite nuestra página web www.mikroe.com LV 18F v6 , página Sistema de desarrollo LV 18F v6 TABLA DE CONTENIDO Introducción al sistema de desarrollo LV 18F v6 . 4 , . 5 1.0. Conexión del sistema a PC , . 25 MikroElektronika página 4 Sistema de desarrollo LV 18F v6 Introducción al
MikroElektronika
Original
puente de diodos CONECTOR P4

S465A

Abstract: FLM1314-18F FLM1314-18F X,Ku-Band Internally Matched FET FEATURES High Output Power: P1dB=42.5dBm(Typ , Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM1314-18F is a power GaAs FET , Tch Unit V V W o C o C Rating 15 -5 75 -65 to +150 175 RECOMMENDED OPERATING , .: Gain Compression Point, S.C.L.: Single Carrier Level FLM1314-18F X,Ku-Band Internally Matched FET , Output Power (S.C.L.) [dBm] Frequency [GHz] 2 38 FLM1314-18F X,Ku-Band Internally Matched
Eudyna Devices
Original
FLM1314-18F S465A ED-4701

17,5 MHZ

Abstract: 10G22D 910 // 25.0 910 // 25.0 910 // 25.0 910 // 25.0 910 // 25.0 910 // 25.0 F38/18E F38/18F F38/18E F38/18F F38/18E F38/18F Termination ( // pF) Package Style 910 // 15.0 910 , /18E F38/18F F25/14B F38/18E F38/18F F25/14B F38/18E F38/18F F25/14B Package Drawings GMCF UM-1/3L, UM-4/3L & UM-5/3L HC49/3L & HC49T/3L H H 0.35Ø 0.43Ø 12.00 (min , ) Height H UM-1/3L UM-4/3L UM-5/3L 8.00 max 4.80 max 6.00 max Package UM-1/3Lx2 is a pair
Golledge Electronics
Original
10G22D 10G6C 17,5 MHZ UM-1J um 60 250f38 8G22D 9G22C 9G22D 9G24F 106G22D
Abstract: FLM4450-18F C-Band Internally Matched FET FEATURES â'¢ High Output Power: P1dB = 43.0dBm (Typ , Package DESCRIPTION The FLM4450-18F is a power GaAs FET that is internally matched for standard , -5 83.3 -65 to +175 175 Unit V V W deg.C deg.C SEDI recommends the follow ing , RoHS Compliance Edition 1.4 Sep. 2012 1 4000V to 8000V FLM4450-18F C-Band Internally , Power (dBm) 2 FLM4450-18F C-Band Internally Matched FET S-PARAMETERS VDS = 10V, IDS = 4800mA Sumitomo Electric
Original
FLM4450-18F
Abstract: FLM5053-18F C-Band Internally Matched FET FEATURES â'¢ High Output Power: P1dB = 43.0dBm (Typ , 32.0dBm â'¢ Broad Band: 5.0 to 5.3GHz â'¢ Impedance Matched Zin/Zout = 50ohm DESCRIPTION The FLM5053-18F , 25deg.C Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 83.3 -65 to +175 175 , 4000V to 8000V FLM5053-18F C-Band Internally Matched FET POWER DERATING CURVE IM3 (dBc , ) Frequency (GHz) Input Power (dBm) Edition 1.3 Sep. 2012 2 FLM5053-18F C-Band Internally Matched Sumitomo Electric
Original
FLM5053-18F

RM-1101

Abstract: ED-4701 FLM1314-18F X,Ku-Band Internally Matched FET FEATURES High Output Power: P1dB=42.5dBm(Typ , /Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM1314-18F is a power GaAs FET that is , GS PT Tstg Tch Unit V V W o C o C Rating 15 -5 75 -65 to +150 175 RECOMMENDED , .: Single Carrier Lev el FLM1314-18F X,Ku-Band Internally Matched FET OUTPUT POWER , POWER ADDED , ] Frequency [GHz] 2 38 FLM1314-18F X,Ku-Band Internally Matched FET S-PARAMETERS +90° +50j
Eudyna Devices
Original
RM-1101

DIODE 10D2

Abstract: CT60AM-18F MITSUBISHI Nch IGBT MITSUBISHI Nch IGBT CT60AM-18F CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 , MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR ELECTRICAL CHARACTERISTICS Symbol , ) 15V 10V 9V 8V 80 7V 40 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VS. GATE-EMITTER VOLTAGE (TYPICAL) 5 Tc = 25°C Pulse
Mitsubishi
Original
CT60AM-18F DIODE 10D2 DIODE 10D1 102 TRANSISTOR bipolar transistor IGBT CT60AM 20MAX

FLM7785-18F

Abstract: FLM7785-18F C-Band Internally Matched FET FEATURES · · · · · · · High Output Power , DESCRIPTION The FLM7785-18F is a power GaAs FET that is internally matched for standard communication bands , Gate-Source Voltage VGS -5 V 83.3 W Total Power Dissipation Tc = 25°C PT Storage , 31.5dBm S.C.L. Min. -1.0 -5 41.5 6.0 - Limit Typ. Max. 8.1 12.75 4350 Unit A -2.0 - , .: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM7785-18F C-Band Internally Matched
Eudyna Devices
Original
Abstract: FLM3439-18F C-Band Internally Matched FET FEATURES â'¢ High Output Power: P1dB = 43.0dBm (Typ , Package DESCRIPTION The FLM3439-18F is a power GaAs FET that is internally matched for standard , -5 83.3 -65 to +175 175 Unit V V W deg.C deg.C SEDI recommends the follow ing , RoHS Compliance Edition 1.2 Aug. 2012 1 4000V to 8000V FLM3439-18F C-Band Internally , Power (dBm) 2 FLM3439-18F C-Band Internally Matched FET S-PARAMETERS VDS = 10V, IDS = 4800mA Sumitomo Electric
Original
FLM3439-18F
Abstract: FLM3742-18F C-Band Internally Matched FET FEATURES â'¢ High Output Power: P1dB = 43.0dBm (Typ , Package DESCRIPTION The FLM3742-18F is a power GaAs FET that is internally matched for standard , -5 83.3 -65 to +175 175 Unit V V W deg.C deg.C SEDI recommends the follow ing , RoHS Compliance Edition 1.4 Sep. 2012 1 4000V to 8000V FLM3742-18F C-Band Internally , . FREQUENCY 2 FLM3742-18F C-Band Internally Matched FET S-PARAMETERS VDS = 10V, IDS = 4800mA Sumitomo Electric
Original
FLM3742-18F

FLM5053-18F

Abstract: FLM5053-18F C-Band Internally Matched FET FEATURES · · · · · · High Output Power: P1dB = , Broad Band: 5.0 ~ 5.3GHz Impedance Matched Zin/Zout = 50 DESCRIPTION The FLM5053-18F is a power , Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 , November 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM5053-18F C-Band , add (%) Total Power Dissipation (W) 100 IM3 (dBc) POWER DERATING CURVE FLM5053-18F
Eudyna Devices
Original
Abstract: FLM4450-18F C-Band Internally Matched FET FEATURES · · · · · · · High Output Power: P1dB = , The FLM4450-18F is a power GaAs FET that is internally matched for standard communication bands to , Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 83.3 -65 to +175 175 Unit V V W °C °C , Carrier Level Edition 1.3 August 2004 1 FLM4450-18F C-Band Internally Matched FET POWER , ) Input Power (dBm) 2 add (%) FLM4450-18F C-Band Internally Matched FET +j50 +j25 +j100 S11 Eudyna Devices
Original
Abstract: FLM3135-18F C-Band Internally Matched FET FEATURES · · · · · · · High Output Power: P1dB = , FLM3135-18F is a power GaAs FET that is internally matched for standard communication bands to provide , Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 83.3 -65 to +175 175 Unit V V W °C °C , .: Single Carrier Level Edition 1.1 August 2004 1 FLM3135-18F C-Band Internally Matched FET , ) IM3 (dBc) FLM3135-18F C-Band Internally Matched FET S11 S22 +j100 3.0 +j50 +j25 +90° Eudyna Devices
Original
FLM3135-18F
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