4N27W Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min - Datasheet Archive

 

Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current Transfer Ratio Pd >c vceo Vr ||= Viso

 

1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current Transfer Ratio Pd >c vceo Vr ||= Viso â- C/'F @'f @vce Device No. Output mW mA v v mA kv % mA v 4N25 Trans 250 - 30 3.0 80 2.5 20 10 10 4N26 Trans 250 - 30 3.0 80 1.5 20 10 10 4N27W 4N27W Trans 250 - 30 3.0 80 1.5 10 10 10 4N28 Trans 250 - 30 3.0 80 0.5 10 10 10 4N29 Darlg 250 125 30 3.0 80 2.5 100 10 10 4N30 Darlg 250 125 30 3.0 80 1.5 100 10 10 4N31(4' Darig 250 125 30 3.0 80 1.5 50 10 10 4N32 Darlg 250 125 30 3.0 80 2.5 500 10 10 4N33 Darlg 250 125 30 3.0 80 1.5 500 10 10 4N35 Trans 300 - 30 6.0 60 3.5 100 10 10 4N36'4' Trans 300 - 30 6.0 60 2.5 100 10 10 4N37 Trans 300 - 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor Characteristics Output Darlington Characteristics Tr IIS Typ tf H» Typ VF V Max ©iF mA vCEJsat) Max @ 'c mA @'F mA â- ceo /uA Max @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N26 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N27 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N28(4> 10 45 1.5 50 1.0 2.0 8.0 0.1 10 5-49 4N29 10 45 1.5 50 1.0 2.0 8.0 0.1 10 5-49 4N30 10 45 1.5 50 1.2 2.0 8.0 0.1 10 5-49 4N31 10 120 1.5 50 1.0 2.0 8.0 0.1 10 5-49 4N32 10 120 1.5 50 1.0 2.0 8.0 0.1 10 5-49 4N33 8.0 8.0 1.5 10 0.3 0.5 10 5-51 4N35'4' 8.0 8.0 1.5 10 0.3 0.5 10 5-51 4N36 8.0 8.0 1.5 10 0.3 0.5 10 5-51 4N37 5-47 Optically-Coupled Isolator Optoelectronic Products 4N25, 4N26 4N27, 4N28 General Description The 4N25, 4N26, 4N27, and 4N28 series of opto-isolators has a silicon npn Planar phototransistor coupled to a Ga'As diode. Each is mounted in a 6-pin plastic dual in-line package. Glassolatedâ„¢ High Current Transfer Ratio-Typically 50% 500 V to 2500 V Minimum Isolation Input-To-Output 1011 i) Isolation Resistance Low Coupling Capacitance-Typically 1.0 pF Absolute Maximum Ratings Maximum Temperature and Humidity pk Storage Temperature* Operating Temperature Pin Temperature Soldering, 10 s* Total Package Power Dissipation at 7a = 25 °C, LED plus Detector' Derate Linearly from 25° C* Input Diode* Vr * Reverse Voltage lp* Forward dc Current Peak Forward Current, 1 ms pulse width, 300 pps Pd" Power Dissipation at Ta = 25°C Derate Linearly from 25 °C Output Transistor Vc£* Collector-to-Ernitter Voltage Vcb* Collector-to-Base Voltage Emitter-to-Collector Voltage Power Dissipation at Ta = 25°C Derate Linearly from 25°C 'EC Po' -55°C to 150°C -55°C to 100°C 260°C 250 mW 3.3 mW/°C 3.0 V 80 mA 3.0 A 150 mW 2.0 mW /< 30 V 70 V 7.0 V 150 mW 2.0 mW/' Package Outline -045 J t. ti 143) n " 075(1 905)MAX .060 (1 270) f .062 (1 575) DIA .050(1.270) - - .032 .120 1813) (3 048) A. * •M .100(2.5401 Notes All dimensions in inches bold and millimeters (parentheses) Tolerance unless specified - ±.015 (±.381) Connection Diagram DIP (Top View) ANODE (+)| 1 CATHODE (-)| 2 N.C. I 3 'indicates JEDEC registered values. Pin 1 2 3 4 5 6 Anodi; Cathode NC Emitter Collector Base *e+ } '"Put Diode ) Output npn Phototransistor 5-48 Typical Electrical 4N25, 4N26 Characteristics 4N27,4N28 Electrical Characteristics-Input Diode T^ = 25 °C Symbol Characteristic Min Typ Max Units Test Conditions vF' Ir* C Forward Voltage Reverse Leakage Current Capacitance 1.2 0.05 150 1.5 100 V MA PF lp = 50 mA VR = 3.0 V, Rl = 1 Mfi VR = 0 V, f = 1 MHz Electrical Characteristics-Output Transistor TA = 25°C Symbol Characteristic Min Typ Max Units Test Conditions VCEO* Collector-to-Emitter Voltage 30 65 V lc = 1.0 mA, IB = 0 lc = 100/iA, IE = o VCBO* Collector-to-Base Voltage 70 165 V VECO* Emitter-to-Collector Voltage 7.0 14 V lE = 100 ft A, lB = o VCE = 10 V, Base Open VCE = 10 V, Base Open VCB = 10 V, Emitter Open VCE = 5.0 V, lc = 500 fiA VCB = 0. f = 1 MHz 'ceo* •cBO* hFE Ccb Collector-to-Emitter Leakage Current 4N25, 4N26, 4N27 4N28 Collector-to-Base Leakage Current Forward Current Gain Collector-to-Base Capacitance 3.5 0.1 250 65 50 100 20 nA nA nA pF Electrical Characteristics-Coupled TA - 25°C Symbol Characteristic Miri Typ Max Units Test Conditions Vio' Input-to-Output Voltage 4N25 4N26, 4N27 4N28 2500 1500 500 Vpk Vpk V VcE(sat)* Collector-to-Emitter Saturation Voltage 0.2 0.5 V lc = 2.0 mA, lp - 50 mA 'e' Collector Output Current 4N25, 4N26 2.0 5.0 mA VCE = 10 V, 4N27, 4N28 1.0 3.0 mA oo n II II °5 3 Rio Input-to-Output Resistance 10" a V|0 = 500 V BW Collector Bandwidth 300 kHz lc = 2.0 mA, VCC = 10 v, Rl = 100 ii Ciò Input-to-Output Capacitance 1.3 pF V|0 = 0, t = 1.0 MHz * Indicates JEDEC registered values.