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4N04L08

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Type Package Marking IPB45N04S4L-08 PG-TO263-3-2 4N04L08 IPI45N04S4L-08 PG-TO262-3-1 4N04L08 IPP45N04S4L-08 PG-TO220-3-1 4N04L08 Maximum ratings, at T j=25 °C, unless otherwise Infineon Technologies
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DIODE smd marking Ag F45A smd diode marking DD IPB45N04S4L GD25Q D-22A
Abstract: IPD50N04S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V DS 40 V R DS(on),max 7.3 m ID 50 A Features · N-channel - Enhancement mode PG-TO252-3-313 · AEC qualified · MSL1 up to 260°C peak reflow · 175°C operating temperature · Green Product (RoHS compliant) · 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain Infineon Technologies
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8025A ANPS071E
Abstract: IPG20N04S4L-08 OptiMOSTM-T2 Power-Transistor Product Summary V DS 40 V R DS(on),max4) 8.2 mW ID 20 A Features · Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 · AEC Q101 qualified · MSL1 up to 260°C peak reflow · 175°C operating temperature · Green Product (RoHS compliant) · 100% Avalanche tested Type Package Marking IPG20N04S4L-08 PG-TDSON-8-4 4N04L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous Infineon Technologies
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F17 DIODE IPG20N04S4L