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TMS44100P-80DGA Texas Instruments 4MX1 FAST PAGE DRAM, 80ns, PDSO20, PLASTIC, TSOP-26/20 visit Texas Instruments
TMS44100-60DGA Texas Instruments 4MX1 FAST PAGE DRAM, 60ns, PDSO20, PLASTIC, TSOP-26/20 visit Texas Instruments
TMS44100P-70SD Texas Instruments 4MX1 FAST PAGE DRAM, 70ns, PZIP20, PLASTIC, ZIP-20 visit Texas Instruments
TMS44100-80SD Texas Instruments 4MX1 FAST PAGE DRAM, 80ns, PZIP20, PLASTIC, ZIP-20 visit Texas Instruments
TMS44100-70DGA Texas Instruments 4MX1 FAST PAGE DRAM, 70ns, PDSO20, PLASTIC, TSOP-26/20 visit Texas Instruments
TMS44100P-80SD Texas Instruments 4MX1 FAST PAGE DRAM, 80ns, PZIP20, PLASTIC, ZIP-20 visit Texas Instruments

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Part : LM2574MX-12/NOPB Supplier : Texas Instruments Manufacturer : Avnet Stock : - Best Price : €1.1179 Price Each : €1.1292
Part : LM2574MX-12/NOPB Supplier : Texas Instruments Manufacturer : Avnet Stock : - Best Price : $1.1438 Price Each : $1.2870
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Part : LM2594MX-12/NOPB Supplier : Texas Instruments Manufacturer : Avnet Stock : 10,000 Best Price : $1.50 Price Each : $1.5423
Part : LM2674MX-12 Supplier : Texas Instruments Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : LM2594MX-12/NOPB Supplier : Texas Instruments Manufacturer : Newark element14 Stock : - Best Price : $1.50 Price Each : $1.50
Part : LM2674MX-12/NOPB Supplier : Texas Instruments Manufacturer : Newark element14 Stock : 2,347 Best Price : $2.04 Price Each : $3.11
Part : LM2674MX-12/NOPB Supplier : Texas Instruments Manufacturer : Newark element14 Stock : - Best Price : $1.56 Price Each : $1.65
Part : LM2574MX-12 Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
Part : LM2574MX-12/NOPB Supplier : National Semiconductor Manufacturer : Rochester Electronics Stock : 5,200 Best Price : $1.35 Price Each : $1.67
Part : LM2594MX-12/NOPB Supplier : National Semiconductor Manufacturer : Rochester Electronics Stock : 15,006 Best Price : $1.77 Price Each : $2.17
Part : LM2594MX-12/NOPB Supplier : Texas Instruments Manufacturer : Rochester Electronics Stock : 2,364 Best Price : $1.77 Price Each : $2.17
Part : LM2674MX-12/NOPB Supplier : National Semiconductor Manufacturer : Rochester Electronics Stock : 2,307 Best Price : $1.77 Price Each : $2.17
Part : NCP154MX100180TAG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 84,000 Best Price : $0.27 Price Each : $0.33
Part : NCP154MX150280TAG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 39,000 Best Price : $0.27 Price Each : $0.33
Part : NCP154MX180280TAG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 75,000 Best Price : $0.27 Price Each : $0.33
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Part : LM2674MX-12 Supplier : National Semiconductor Manufacturer : Bristol Electronics Stock : 1,700 Best Price : - Price Each : -
Part : OV120K474MX122R Supplier : KEKO-VARICON(RoHS) Manufacturer : Bristol Electronics Stock : 2,000 Best Price : $0.1575 Price Each : $0.5625
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Part : LMB1024MX1 Supplier : National Semiconductor Manufacturer : ComSIT Stock : 8,360 Best Price : - Price Each : -
Part : LM2574MX-12/NOPB Supplier : Texas Instruments Manufacturer : Chip1Stop Stock : 2,941 Best Price : $1.5001 Price Each : $2.4845
Part : LM2594MX-12/NOPB Supplier : Texas Instruments Manufacturer : Chip1Stop Stock : 2,660 Best Price : $1.8490 Price Each : $2.9710
Part : LM2674MX-12/NOPB Supplier : Texas Instruments Manufacturer : Chip1Stop Stock : 1,784 Best Price : $1.8020 Price Each : $2.96
Part : LM2674MX-12/NOPB Supplier : Texas Instruments Manufacturer : element14 Asia-Pacific Stock : 2,347 Best Price : $2.13 Price Each : $4.0480
Part : LM2674MX-12/NOPB Supplier : Texas Instruments Manufacturer : Farnell element14 Stock : 2,347 Best Price : £1.30 Price Each : £2.80
Part : W104MX-1 OLD Supplier : Magnecraft Manufacturer : Master Electronics Stock : 32 Best Price : - Price Each : -
Part : TY234MX-1000 Supplier : Thomas & Betts Manufacturer : Waytek Stock : 10,000 Best Price : $0.1183 Price Each : $0.1183
Part : TY244MX-1000 Supplier : Thomas & Betts Manufacturer : Waytek Stock : 1,000 Best Price : $0.3503 Price Each : $0.3503
Part : TY24MX-1000 Supplier : Thomas & Betts Manufacturer : Waytek Stock : 60,000 Best Price : $0.0843 Price Each : $0.0843
Part : TY5244MX-100 Supplier : Thomas & Betts Manufacturer : Waytek Stock : 700 Best Price : $0.6665 Price Each : $0.7841
Part : TY524MX-100 Supplier : Thomas & Betts Manufacturer : Waytek Stock : 2,900 Best Price : $0.2392 Price Each : $0.2815
Part : NCP154MX100180TAG Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 4,800 Best Price : $0.24 Price Each : $0.40
Part : NCP154MX150280TAG Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 4,800 Best Price : $0.24 Price Each : $0.40
Part : NCP154MX180280TAG Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 4,600 Best Price : $0.24 Price Each : $0.40
Part : NCP154MX180290TAG Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 4,800 Best Price : $0.24 Price Each : $0.40
Part : NCP154MX180300TAG Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 4,800 Best Price : $0.24 Price Each : $0.40
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4MX1

Catalog Datasheet MFG & Type PDF Document Tags

44-SOJ

Abstract: 4Mx1 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M Format 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8
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Original
44TSOP 44-SOJ 4Mx1 PD434001ALE-12 PD434001ALE-15 PD434001ALE-17 PD434001ALE-20 PD434001ALLE-15 PD434001ALLE-17
Abstract: '¢ 4,194,304-word by 9-bit organization. module with 9pcs of 4Mx1 DRAMs assembled on â'¢ Fast , ~A10 /RAS 4Mx1 DRAM /CAS /WE /DQ2 /DQ1 A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO DI,DO /CAS0 /WE A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS , DQ3 A6 A7 /DQ5 /DQ6 /DQ7 A0~A10 /RAS 4Mx1 DRAM /CAS /WE PQ A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS Transcend Information
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TS4M9960 TS4M9960--

4Mx1

Abstract: TASC 20-5 -50/-60/-70 3.3V 4Mx1 DRAM The HYB 314100BJ/BJL is the new generation dynamic RAM organized as 4 194 , /-70 3.3 V 4Mx1 DRAM P-SOJ-26/20-5 DI WE RAS N.C. A10 1 2 3 4 5 26 25 24 23 22 , /BJL-50/-60/-70 3.3V 4Mx1 DRAM WE & Data in Buffer DI No. 2 Clock Generator Data , 4 VCC VSS HYB314100BJ/BJL-50/-60/-70 3.3 V 4Mx1 DRAM Absolute Maximum Ratings Operating , /-70 3.3V 4Mx1 DRAM DC Characteristics (cont'd) TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V
Siemens
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TASC 20-5 P-SOJ-26 A0-A10 HYB314100BJ/BJL P-SOJ-26/20 GPJ05626

KM44C1000BJ

Abstract: 4Mx1 Mx1 4 Mx1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 1Mx4 1Mx4
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OCR Scan
KM44C1000BJ 4Mx1 nibble KM41C4000BTR KM41C4000BLP KM41C4000BU KM41C4000BLZ KM41C4000BLV KM41C4000BLVR

HB56D836SBT-AC

Abstract: power bank 5v pcs. 4Mx4 (HM5117400AS) 4 pcs. 4Mx1 (HM514100B/CS) 8 pcs. 4Mx4 (HM5117400AS) 4 pcs. 4Mx1 (HM514100CS) 16 pcs. 4Mx4 (HM5117400AS) 8 pcs. 4Mx1 (HM514100BS/CS) 16 pcs. 4Mx4 (HM5117400AS) 8 pcs. 4Mx1 , (H M 5117800B TT) 16 pcs. 4M x4 (H M 5116400A S ) 8 pcs. 4Mx1 (H M 514100B S / H M 514100C S ) 16 pcs. 4M x4 (H M 5117400A S ) 8 pcs. 4Mx1 (H M 514100B S / H M 514100C S ) 18 pcs. 4M x4 (H M 51 1 6 40 0 A
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OCR Scan
HB56D836SBT-AC 514400C power bank 5v B56A HM5116400ATS m514400c A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL HB56A132BW-B/BL HB56A132SBW-B/BL
Abstract: â'¢HYUNDAI HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized , Column Decoder Sense Amp I/O Gate Memory Array 4,194,304 x 1 Substrate Bias Generator Vcc Vss 4Mx1,FP , ) Vss Ground 4Mx1,FP DRAM Rev.10 / Jan .98 3 -HYUNDAI HY514100A ABSOLUTE MAXIMUM RATINGS Symbol , 10 |LiA Vol Output Low Voltage Iol = 4.2mA - 0.4 V Voh Output High Voltage loh = -5.0mA 2.4 - V 4Mx1 , normal functional opération. 5. Icc5(max.), Icc7 are applied to L-part only. 4Mx1,FP DRAM Rev.10 / Jan -
OCR Scan
HY514100AJ 20/26P HY5141 00ALJ HY514100AT HY514100ALT
Abstract: PcRam TS4M3660 Description Features The TS4M3660 is a 4M by 36-bit dynamic RAM â'¢ 4,194,304-word by 36-bit organization. module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 â , A0~A10 DQ8 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ17 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ18~DQ25 4Mx4 , /CAS /WE /CAS1 /RAS2 /CAS2 A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE /CAS3 Pinouts Transcend Information
Original
4P366000 TS4M3660--

MB814260

Abstract: 4MX1 document, call 1-800-866-8608 DATA SHEET EDITION 1.0 4M x 1 673k (4Mx1 Fast Page Mode, 5V) MB814100A Not recommended for new design. DATA SHEET EDITION 1.0 258k (4Mx1 Fast Page Mode, 5V) MB814100D Not recommended for new design. DATA SHEET EDITION 3.0 279k(4Mx1 Fast Page Mode, 5V
Fujitsu
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MB814400A MB814405C MB814405D MB814260 407K MB814400D MB814400C MB81V4405C

DRAMs

Abstract: 4Mx1 refresh is used, the number of rows and column match the 4Mx1. allowing the usage of 4Mx1 DRAMs for parity , , 4Mx1 DRAMs can't be used for partly because the number of rows and columns doss not maldi. The shaded
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OCR Scan
DRAMs INP01GKU 5116400BJ/BT 5117400BJ/BT

HY514100A

Abstract: HY514100AJ HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194 , 4Mx1,FP DRAM Rev.10 / Jan.98 2 VCC VSS HY514100A PIN CONFIGURATION (Marking Side) D , Data Input Q Data Output Vcc Power (5V) Vss Ground 4Mx1,FP DRAM Rev.10 / Jan , 4.2mA - 0.4 V VOH Output High Voltage IOH = -5.0mA 2.4 - V 4Mx1,FP DRAM , L-part only. 4Mx1,FP DRAM Rev.10 / Jan.98 5 HY514100A AC CHARACTERISTICS (TA = 0 °C to 70 °C
Hyundai
Original
HY514100ALJ
Abstract: a 4M by 36-bit dynamic RAM Features module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 â , DQ0~DQ7 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ8 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 , /RAS0 /CAS0 /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ27~DQ34 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ17 4Mx1 /RAS DRAM /CAS /WE /CAS1 /RAS2 /CAS2 /CAS3 PD1~PD4 PD Configuration Transcend Information Inc.#1; A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE 16MB Transcend Information
Original
TS4M3660G TS4M3660G--

A0-A10d

Abstract: HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194 , Generator Substrate Bias Generator VCC VSS 4Mx1,FP DRAM Rev. 10/Jan.98 2 HY514100A PIN , Enable 4Mx1,FP DRAM Rev. 10/Jan.98 ABSOLUTE MAXIMUM RATINGS Parameter A Unit 0 to 70 C C V V , 4.2mA IOH = -5.0mA Min -10 -10 2.4 Max 10 10 0.4 Unit µA µA V V VOL VOH 4Mx1,FP DRAM Rev. 10/Jan , normal functional operation. 5. Icc5(max.), Icc7 are applied to L-part only. 4Mx1,FP DRAM Rev. 10/Jan
Hyundai
Original
A0-A10d
Abstract: -bit dynamic RAM module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 DRAM assembled on the printed circuit board , 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ17 A0~A10 DQ18~DQ25 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ0~DQ35 /RAS0 /CAS0 /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ27~DQ34 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE /RAS /CAS /WE 4Mx1 DRAM /CAS1 /RAS2 /CAS2 /CAS3 PD1~PD4 PD Transcend Information
Original
TS4M3670G 4P3670GD TS4M3670G--
Abstract: â'¢HYUNDAI HY514100A 4Mx1, Fast Page mode DESCRIPTION T h is fa m ily is a 4M b it d y n a , FUNCTIONAL BLOCK DIAGRAM Q WE CAS 4Mx1,FP DRAM Rev.10 / Jan.98 2 -HYUNDAI HY514100A , Pin Name = NC 1 U > to WE Ground 4Mx1,FP DRAM Rev.10 / Jan.98 3 -HYUNDAI , 4Mx1,FP DRAM Rev.10 / Jan.98 4 -HYUNDAI HY514100A DC CHARACTERISTICS (T a = 0°C to 70 , L-part only. 4Mx1 ,FP DRAM Rev.10 / Jan.98 5 -HYUNDAI HY514100A AC CHARACTERISTICS (T a -
OCR Scan
Abstract: PcRam TS4M3670G Description Features The TS4M3670G is a 4M by 36-bit dynamic RAM â'¢ 4,194,304-word by 36-bit organization. module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 â , /RAS DRAM /CAS /WE A0~A10 DQ8 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ9~DQ16 4Mx4 /RAS DRAM , /CAS0 /WE A0~A10 DQ26 4Mx1 /RAS DRAM /CAS /WE A0~A10 DQ27~DQ34 4Mx4 /RAS DRAM /CAS /WE A0~A10 DQ35 4Mx1 /RAS DRAM /CAS /WE /RAS /CAS /WE 4Mx1 DRAM /CAS1 /RAS2 Transcend Information
Original
Abstract: moi Electronic Detigns me. _ (EDI414096C Features High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell, provide high circuit density with high performance , -883, para graph 1.2.1, is available. OiF©M^Tfl©INI 4Mx1 bit CMOS Dynamic^ / S Random Access M em /y -
OCR Scan
MIL-STD-883 A0A10
Abstract: MDi Electronic Dôiign» Inc. High Performance Four Megabit Monolithic DRAM Features EDI414097C 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed through 22 address bits which are entered 11 at a time (A0 - A10). RAS\ is used to latch the first 11 bits and CAS\, the , product compliant to Mil-STD-883, paragraph 1.2.1, is available. [P^iüiQiÆ W 4Mx1 bit CMOS Dynamic -
OCR Scan
EDI411024C EDI414097C70LZB EDI414097C80LZB ED1414097C100LZB

4Mx1

Abstract: CA211 EDI414096C Electronic Designs Inc. â  High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS; Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell, provide high circuit density with high performance. The use of dynamic , , is available. Pin Configurations and Block Diagram ADVANCE fliF©MATI]©l Features 4Mx1 bit CMOS
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OCR Scan
CA211 A109 amplifier a719 A109-
Abstract: ELECTPOWC MSGNS NC. | ^EDI INSIDE SECTION 3 . Density 1 Megabit 1 Megabit 1 Megabit 1 Megabit 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 16 Megabits 16 Megabits 18 Megabits 16 Megabits Organization IM xl IM xl 1Mx1 1Mx1 1Mx4 1Mx4 1Mx4 4Mx1 4Mx1 4Mx1 4Mx4 4Mx4 4Mx4 4Mx4 Part No. BH411024C-ZB EDI411024C-NB EDI411024C-FB EDI411024C-QB EDI441024C-LZB EDI441024C-BB EDI441024C-FB EDI414097C-LZB E0W14Q97C-BB EDI414087C-FB EDI444086C-BB EDI444096C-FB EDI444096CA-BB -
OCR Scan
EDI44409BCA-FB

4Mx1

Abstract: 1213C É3EDI Electronic Designs Inc. EDI414096C High Performance Four Megabit Monolithic DRAM Features 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power C M O S Dynamic RA M organized a s 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell, provide high circuit density with high performance , -883, para graph 1.2.1, is available. DMFOMM' IO i 4Mx1 bit C M O S Dynamic Random Access Memory ·
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OCR Scan
1213C

023SbDS

Abstract: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Part Number Organization Speed (ns) Technology Feature Package Remark Generation 1st Gen. KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 KM44C1OOOJ KM44C1000Z KM44C1OOOLJ KM44C1000LZ KM44C1002J KM44C1002Z 4M x1 4M x1 4M X 1 4M X 1 4M x 1 4M x 1 4M x 1 4M X 1 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 4Mx1 4Mx1 4M X 1 4M X 1 4M x 1 4M X 1 4M X 1 4M X 1 4M x 1 4M x 1 4M X 1 4M x 1 4M X 1 4M x 1 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4
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OCR Scan
023SbDS 514100BJ-50/-60 P-SOJ-26/20-2 5141OOBJ-50/-60 514100BJ

KM41C4000AJ

Abstract: KM44C1000AZ Mx1 4 Mx1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 4 Mx 1 1Mx4 1Mx4
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OCR Scan
KMM584000A KM41C4000AJ KM44C1000AZ 1Mx4 SOJ 1Mx4 nibble 256KX16 KMM581000AN KMM591000AN KMM594000A KMM5321000AV/AVG
Abstract: '¢ 4,194,304-word by 9-bit organization. module with 9pcs of 4Mx1 DRAMs assembled on â'¢ Fast , ~A10 /RAS 4Mx1 DRAM /CAS /WE /DQ2 /DQ1 A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO DI,DO /CAS0 /WE A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS , DQ3 A6 A7 /DQ5 /DQ6 /DQ7 A0~A10 /RAS 4Mx1 DRAM /CAS /WE PQ A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS /WE DI,DO A0~A10 /RAS 4Mx1 DRAM /CAS Siemens
Original
314100BJ/BJL-50/-60/-70 GPJ05627

hyb514100

Abstract: 514100 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M 4M Format 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 4Mx1 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 1Mx4 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8 512Kx8
Siemens
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hyb514100 514100 514100BJ/BJL 514100BJ/BJL-50/-60/-70 HYB514100BJ/BJL

SIEMENS rwc 62

Abstract: Q67100-Q1029 4M X 1 4M X 1 4M X 1 4M X 1 4M X 1 4Mx1 4M X 1 4M X 1 4M X 1 4M X 1 4M X 1 4M X 1 4Mx1 512Kx8 512Kx8
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OCR Scan
SIEMENS rwc 62 Q67100-Q1029 5141OOB J/BJL-50/-60/-70 18IBI
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