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Part Manufacturer Description Datasheet BUY
TMS416169A-60DZ Texas Instruments 1MX16 EDO DRAM, 60ns, PDSO42 visit Texas Instruments
TMS416169A-70DZ Texas Instruments 1MX16 EDO DRAM, 70ns, PDSO42 visit Texas Instruments
TMS416169A-50DZ Texas Instruments 1MX16 EDO DRAM, 50ns, PDSO42 visit Texas Instruments
TMS465169P-40DGE Texas Instruments 4MX16 EDO DRAM, 40ns, PDSO50 visit Texas Instruments
TMS418169A-60DZR Texas Instruments 1MX16 EDO DRAM, 60ns, PDSO42 visit Texas Instruments
TMS465169-40DGE Texas Instruments 4MX16 EDO DRAM, 40ns, PDSO50 visit Texas Instruments

4M DRAM EDO

Catalog Datasheet MFG & Type PDF Document Tags

ISO11172-2

Abstract: A12837 ) CD­DSP (LC78631E) VCO+PLL (54MHz) 1M­DRAM (option)(EDO) Track 1 information CD­ROM decoder LC74202E 4M­DRAM (EDO) DRAM Arbiter SYSTEM decoder Start Trigger MPEG Audio PST , strobe (4M-DRAM) 87 WE OUT Write enable 89 CAS OUT Column address , .6330-12/13 LC74202E DRAM DRAM(4M) $00000 $01000 $04000 user area 8K­byte DRAM(4M+1M , $4d400 $4 f f f f DRAM(4M) B $00000 $02800 $04000 user area 20K­byte video bit buffer
SANYO Electric
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QIP100E ISO11172-2 A12837 DRAM arbiter MPEG-1 Encoder 633013 DD0-DD15 O0599 LC74202ECD1 1M106 EIA608 O0599TS

2m x 32 SRAM SIMM

Abstract: SIMM 72 IBM11D4325B SIMM 72 4M x 32 11/11 5.0V Y EDO IBM11D4360B SIMM 72 4M x 36 , EDO IBM11D4480B ECC-on-SIMM 72 4M x 36 11/11 5.0V Y Fast Page IBM11D4490B , ECC-on-SIMM 72 4M x 32 11/11 5.0V Y EDO IBM11E4480B ECC-on-SIMM 72 4M x 36 11 , /11 3.3V Y EDO IBM11M4640C IBM11M4640CB DIMM DIMM 168 168 4M x 64 4M x 64 , 12/10 5.0V Y EDO IBM11M4645CB DIMM 168 4M x 64 12/10 3.3V Y EDO
IBM
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IBM0116400M 2m x 32 SRAM SIMM SIMM 72 IBM11M4735CB IBM038329P IBM025161L IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B

64mb edo dram simm

Abstract: 2mb 72-pin simm DRAM 1M x 16 1M x 16 1M x 16 1M x 16 1M x 16 1M x 16 1M x 16 1M x 16 4M x 4 4M x 4 4M x 4 , 32 11/11 5.0V Y EDO IBM11D4360B SIMM 72 4M x 36 11/11 5.0V Y Fast Page IBM11D4475B ECC-on-SIMM 72 4M x 32 11/11 5.0V Y EDO IBM11D4480B , /10 5.0V Y EDO IBM11E2480B IBM11E4360B ECC-on-SIMM SIMM 72 72 2M x 36 4M x 36 , x 32 11/11 5.0V Y EDO IBM11E4480B ECC-on-SIMM 72 4M x 36 11/11 5.0V
IBM
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64mb edo dram simm 2mb 72-pin simm simm72 DIMM 72 pin out ram 168 pin IBM11S43

4Mx64

Abstract: SG 97 - 7 0 4 · 32M Byte DRAM MODULES (144 pin SODIMM) GMM7644147CIG 4M x 64 Bit, 3.3V, 2K Réf., EDO , , 1K Ref., EDO - - - 155 ·16M B yte DRAM MODULES (168 pin , Ref., FPM - 418 4M x 64 Bit, 5V, 2K Ref., EDO , - 4M x 64 Bit, 5V, 2K Ref., EDO -474 4M x 64 Bit, 3.3V, 2K R e f., EDO - 486 4M x 64 Bit, 3.3V, 2K Ref., EDO
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OCR Scan
4Mx64 SG 97 GMM7642147 GMM7641000CS/SG GMM7641000CT/TG GMM7641010CS/SG GMM7641010CT/TG GMM7641200CS/SG GMM7641200CT/TG

IBM025161LG5D60

Abstract: gm72v16821 / Access Time IBM0116405PT1D-60 EDO DRAM 16Mb 4M x 4 IBM0116405PT1D-70 EDO DRAM 16Mb , /s MSM5416257A Burst DRAM 4M 256Kx16 50ns 80MHz 160MB/s MSM5416258A EDO 4M , EDO EDO EDO EDO EDO EDO SDRAM SDRAM SGDRAM SDRAM SDRAM SDRAM 4M 4M 4M 4M 16M 16M , Organization Clock Rate/ Access Time HY512264 HY514264B HY5lV4264B EDO 2M 4M 4M 128Kxl6 , -70 IBM117805PT3D-60 EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM IBM117805PT3D
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TC59R1809 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 GM72V1682 MB81141621 MB81141622 MB81G8322 MB81116421 16MEG MB81116422
Abstract: ., EDO - 443 10 LG Semicon · TIMING DIAGRAMS 1. 4M DRAM x1 , LG Semicon PRODUCT IMPEX · 4M DRAM GM71C4100C GM71C4100E GM71C4400C GM71C4403C GM71C4400E , Ref., EDO - 144 4M x4 B it, 5V, 2KRef, EDO , , FPM - 174 4M x 4 Bit, 3.3V, 4KRef, EDO -184 4M x 4 Bit, 3.3V, 2KRef, EDO -194 2M x 8 Bit, 5V, 2K Ref -
OCR Scan
GM71C4403E GM71C4800C GM71C4260C GM71C4263C 512KR 256KR

0118160B

Abstract: 0116165B .205 IBM 0116405P. .DRAM., . 4M x 4 . 12/10, 3.3V, EDO, LP, S R , . 149 IBM 0117405M .DRAM. .4M x 4 . 11/11, 5.0V, EDO, LP, S R . 149 IBM 0117405P. .DRAM. .4M x 4 . 11/11, 3.3V, EDO, LP, S R , .343 IBM 0116400. .DRAM., . 4M x 4 . 12/10, 5 . 0 V . 179 IBM 0116400B. .DRAM., . 4M x 4. 12/10, 3 .3 V
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0116165B 0118160B 0117805 014400B 014400 0116160P 0116165M 0116165P 011616B IBM0116400P

FPM DRAM 30-pin SIMM

Abstract: 30 SIMM - 42 · 4MByte DRAM MODULES (30 pin SIMM) GMM784000CS GMM794Q00CS 4M x 8 Bit, 1 KRef., F P M -4M x 9 Bit, 1KRef., F P M -49 57 · 4M Byte DRAM MODULES (72 pin SIMM , -320 4M x 36 Bit, ECC, 5V, 4K Ref., E D O - 329 32MByte DRAM MODULES , · TIMING DIAGRAMS SIMM Based on 4M DRAM, Fast Page M o d e -SIMM Based on 4M DRAM, Extended Data Out Page M o d e -SIMM Based
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FPM DRAM 30-pin SIMM 30 SIMM GMM7322110CMS simm 72 pin edo edo dram 72-pin simm SG4M GMM781000CNS GMM791000CNS GMM7321000CS/SG GMM7321010CS/SG GMM7321000CNS/SG GMM7321200CNS/SG
Abstract: ) ) Semiconductor Group 366 4.96 SIEMENS HYB 5116(7)405B J-50/-60/-70 4M X 4-EDO DRAM The HYB 5116(7 , Configuration (top view) HYB 5116(7)405BJ-50/-60/-70 4M X 4-EDO DRAM P-SOJ-26/24 300 mil ' ccC 'o 1 , 369 SIEMENS HYB 5116(7)405BJ-50/-60/-70 4M x 4-EDO DRAM 1/01 I/0 2 1/03 1/04 1 Data In B , 370 SIEMENS Absolute Maximum Ratings HYB 5116(7)405BJ-5Q/-60/-70 4M X 4-EDO DRAM Operating , )405BJ-50/-60/-70 4M X 4-EDO DRAM DC Characteristics (note: values in brackets for HYB 5117405 BJ -
OCR Scan
5116405BJ 5117405BJ 5116405BJ-50 5116405BJ-60 5116405BJ-70 5117405BJ-50

HM62V8512LFP

Abstract: M51419 DRAM Cycle time (ns) 2M 4M 16M -64kx16x2 banks- -128kx16x2 banks-2Mx4x2 banks-1Mx8x2 banks - , byte DIM M Access time (ns) x72 -4Mx72 (16M DRAM) 60 70 F.P. F.P. (EDO ) F.P. F.P. F.P. (EDO ) F.P. F.P , ( 16M DRAM, byte-wide) - -1 Mx72 (4M DRAM) x64 -4Mx64 (16M DRAM)-2Mx64 (16M DRAM)-1 Mx64 (16M DRAM, word-wide)(4M DRAM) - -^ ' h B56GÍ'64EJ-xxA - i HB56H164EJ-XXA , )- 2Mx40 (4M DRAM) - 1Mx40 (4M DRAM) -x36 - | - 8Mx36 (16M DRAM )-
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HN62318EP HM62V8512LFP M51419 HM53861J dram zip 256kx16 16M dram m514280 HM5116100AS/ATS HM5116400AS/ATS 1HM51W16400AS/ATS 1HM5117400AS/ATS HM51W17400ATS HM5117800BJ/BTT
Abstract: PAGE MODE WITH EDO, 4M X 32 DRAM SODIMM Using 4M X 16, 4K REFRESH, 3.3V ABSOLUTE MAXIMUM RATINGS , MODE WITH EDO, 4M X 32 DRAM SODIMM Using 4M X 16, 4K REFRESH, 3.3V CAPACITANCE (Ta = 25 ºC, Vcc , WITH EDO, 4M X 32 DRAM SODIMM Using 4M X 16, 4K REFRESH, 3.3V NOTES 1. An initial pause of , EDO, 4M X 32 DRAM SODIMM Using 4M X 16, 4K REFRESH, 3.3V PACKAGE DIMENSIONS AVED Memory Products , -60 FAST PAGE MODE WITH EDO, 4M X 32 DRAM SODIMM Using 4M X 16, 4K REFRESH, 3.3V Revision: A Revision AVED Memory Products
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AVED4F324LDM16-60

5117405

Abstract: HYB5116(7)405BJ/BT-50/-60/-70 4M x 4-EDO DRAM The HYB 5116(7)405BJ/BT is a 16MBit dynamic RAM , . not connected Semiconductor Group 2 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4-EDO DRAM P-SOJ , ) HYB5116(7)405BJ/BT-50/-60/-70 4M x 4-EDO DRAM DC Characteristics( note : values in brackets for HYB , 7 pF Semiconductor Group 7 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4-EDO DRAM AC , Semiconductor Group tOEA 8 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4-EDO DRAM AC Characteristics
Siemens
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5117405 HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50 HYB5116405BJ/BT-60 HYB5116405BJ/BT-70 HYB5117405BJ/BT-50
Abstract: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features · 4,194,304 word by , IBM0117405M IBM0117405 IBM0117405P IBM0117405B 4M x 4 11/11 EDO DRAM Ordering Information Part Number , IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Block Diagram Page 151 IBM0117405M IBM0117405 IBM0117405P IBM0117405B 4M x 4 11/11 EDO DRAM Truth Table Function Standby Read Early-Write Delayed-Write , Data Out Page 152 IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM -
OCR Scan
TSOP-26/24

Dram 168 pin EDO 8Mx8

Abstract: 17405CJ 4M X 64 5 Product S electio n G uide 1.2. Product Selection Guide DRAM DRAM P art , Avail. Now Now Now Now 3Q97 3Q97 72 Pin Extended Data Out DRAM SIMM - 5 Volt Type 1M x32 2M x32 4M , Synchronous DRAM SIMM- 3.3 Volt Type 2M x64 4M x64 P a rt Number (Tin-Lead) VS26417801BTSA * VS46417801BTSA , Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM (continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 Volt -r 8Mx8
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17405CJ Dram 168 pin EDO 8Mx8 4Mx4 dram simm VQ264260BJ 4265BJ 264265BJ 17400CJ 17405CT

BEDO RAM

Abstract: hy5118160b . 57 4M -bit DRAM HY514100A.4M HY514100B.4M HY51V4100B , .843 HY51V64160.4M x 16-bit.3.3V, FP/EDO, 8K/4K, ref., 2CAS, S R . 845 16M-bit Synchronous DRAM HY57V16401.4M x 4-bit. 3 3V, 4K ref , . 1 2. PRODUCT QUICK REFERENCE GUIDE DRAM Part Numbering , . 5 3. DRAM DATA SHEETS lM -bit DRAM HY531000A. 1M x HY534256A
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BEDO RAM hy5118160b HY5118164B HY5117404 HY512260 HY514400A HY514400B HY57V16161 HY588321 HY5216256
Abstract: Page Mode Cycle Time 4M X 16 12/10 EDO DRAM Dual CAS Byte Read/Write Performance: -50 50ns , -4239-01 Revised 4/96 Page 519 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Preliminary Ordering , IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Truth Table Function Standby Read: Word Read: Lower Byte , IBM0165165P 4M x 16 12/10 EDO DRAM Absolute Maximum Ratings Symbol V Cc Parameter Power Supply Voltage , PF PF Notes Page 522 Preliminary 4M X IBM0165165B IBM0165165P 16 12/10 EDO DRAM DC -
OCR Scan
TSOP-54 IBM0165165B/P 165165P

0165165BT3C-60

Abstract: IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features â'¢ 4,194,304 word by 16 bit , IBM0165165P 4M x 16 12/10 EDO DRAM Ordering Information Part Number Power 5 Self Refresh IBM , /015 88H 2011 G A14-4250-02 Revised 11/97 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM , the end of this document. Page 3 of 28 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM , of 28 88H 2011 G A14-4250-02 Revised 11/97 IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM
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0165165BT3C-60 TSQP-50

0116405

Abstract: IBM0116405 IBM0116405P IBM0116405B 4M x 4 12/10 EDO DRAM Ordering Information Part Number S P /L P SP SP , IBM0116405 IBM0116405P IBM0116405B 4M X 4 12/10 EDO DRAM DC Electrical Characteristics Symbol (t a= o , IIH I IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM ( t a = o to +70-c, vcc , 4M x 4 12/10 EDO DRAM Write Cycle -5 0 Symbol Param eter Min. twcs Iwch twp ÏRWL tcwi tos ÏDH W , IBM0116405B 4M x 4 12/10 EDO DRAM Read-Modify-Write Cycle -50 Symbol Param eter Min. tRWC tRWD tcWD I awd
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OCR Scan
0116405

1MX16BIT

Abstract: 16MX1 1 6 4 0 4 A . 4M x4-bit. 5V, EDO, 2K/4K re f. 169 HY51V17404A / HY51V16404A. 4M x4-bit, 3.3V, EDO, 2K/4K re f , .193 HY5117404B /H Y 5 1 1 6 4 0 4 B . 4M x4-bit, 5V, EDO, 2K/4K HY51V17404B / H Y51V 16404B. 4M x4-bit. 3.3V, EDO, 2K/4K re f , .217 HY51V17404C / H Y51V16404C.4M x4-bit, 3.3V, EDO, 2K/4K re f
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OCR Scan
1MX16BIT 16MX1 Y512800 Y512264

17805

Abstract: DRAM 1M X 8 17801 : Sync, 2k self-ref. 2Mx8 SDRAM, LVTTL 17405 : EDO, 2k ref. 4M x 4 DRAM 17161 : Sync, 2k self-ref. 1M x16 SDRAM, LVTTL 17800 : Fast page, 2k ref. 2M x 8 DRAM 17805 : EDO, 2k ref 2M x 8 DRAM 18160 , 8 DRAM 64160 : Fast page, 8k ref. 4M x l6 DRAM 64165 : EDO, 8k ref. 4M x l6 DRAM 65160 : Fast page, 4k ref. 4M x 16 DRAM 65165 : EDO, 4k ref. 4M xl6 DRAM 648021 : Sync, 4k, 2 Bank, 8Mx8 SDRAM, LVTTL , : Self-Refresh D evice T ype/ C o n fig u ratio n 4260 : Fast page, lk ref 256K x 16 DRAM 4265 : EDO, lk ref
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OCR Scan
17805 DRAM 1M X 8 65165 k3264 64165 code edo 16DRAM
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