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Part : B11-B0-46-620-14A-K3 Supplier : Carling Technologies Manufacturer : Master Electronics Stock : 25 Best Price : $13.21 Price Each : $32.63
Part : AM79C984AKC/W Supplier : Advanced Micro Devices Manufacturer : New Advantage Stock : 4 Best Price : - Price Each : -
Part : BSS84AKM,315 Supplier : Nexperia Manufacturer : New Advantage Stock : 127,500 Best Price : $0.0554 Price Each : $0.0554
Part : BSS84AKV,115 Supplier : Nexperia Manufacturer : New Advantage Stock : 4,000 Best Price : $0.2633 Price Each : $0.2633
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Part : SEAM-50-03.5-SM-10-4-A-K-TR Supplier : Samtec Manufacturer : Samtec Stock : 6 Best Price : $27.00 Price Each : $27.00
Part : 0423014 - AKG 16 BU Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : 13,333 Best Price : - Price Each : -
Part : 079614 - AK35 Supplier : Eaton Electronics Manufacturer : Shortec Electronics Stock : 1,818 Best Price : - Price Each : -
Part : 107194 - AKU120/10 Supplier : Eaton Electronics Manufacturer : Shortec Electronics Stock : 741 Best Price : - Price Each : -
Part : HI3-574AKN-5Z Supplier : Intersil Manufacturer : Wuhan P&S Stock : 143 Best Price : $35.64 Price Each : $42.56
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4AK22 Datasheet

Part Manufacturer Description PDF Type
4AK22 Hitachi Semiconductor FET Arrays Original
4AK22 Hitachi Semiconductor Silicon N-Channel Power MOSFET Array Original
4AK22 Renesas Technology Silicon N-Channel Power MOS FET Array Original
4AK22 Hitachi Semiconductor Power Transistors Data Book Scan
4AK22 N/A FET Data Book Scan
4AK22 N/A Catalog Scans - Shortform Datasheet Scan
4AK22 N/A Catalog Scans - Shortform Datasheet Scan
4AK22-E Renesas Technology MOSFET: Enhancement Mode: N Channel: SIP: 10-Pin Original

4AK22

Catalog Datasheet MFG & Type PDF Document Tags

Hitachi DSA002751

Abstract: 4AK22 Silicon N-Channel Power MOS FET Array November 1996 Application High speed power , die: 2SK1254(L), 2SK1254(S) 4AK22 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 , Unit V V A A A W W °C °C 2 4AK22 Electrical Characteristics (Ta = 25°C) (1 Unit) Item Drain to , characteristic curves of 2SK1254(L), 2SK1254(S) 3 4AK22 Maximum Channel Dissipation Curve 6 Channel , 4AK22 When using this document, keep the following in mind: 1. This document may, wholly or partially
Hitachi
Original
Hitachi DSA002751 D-85622

Hitachi DSA002759

Abstract: 4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features · Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A , (L), 2SK1254(S) 4AK22 Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to , 4AK22 Electrical Characteristics (Ta = 25°C) (1 Unit) Item Drain to source breakdown voltage Gate to , ) 3 4AK22 4 4AK22 When using this document, keep the following in mind: 1. This document
Hitachi
Original
Hitachi DSA002759

Hitachi motor driver

Abstract: Hitachi discrete 4AK22 Silicon N-Channel Power MOS FET Array ADE-208-1206 (Z) 1st. Edition Mar. 2001 , · Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S) 4AK22 Outline SP-10 3 D , operation 2 4AK22 Electrical Characteristics (Ta = 25°C) (1 Unit) Item Symbol Min Typ , Note: 1. Pulse Test See characteristic curves of 2SK1254(L), 2SK1254(S) 3 4AK22 Maximum , ,000 Drain to Source Voltage VDS (V) 150 4AK22 Package Dimensions As of January, 2001 Unit
Hitachi Semiconductor
Original
Hitachi motor driver Hitachi discrete DSA003638

2sk125

Abstract: 2SK1254 products contained therein. 4AK22 Silicon N-Channel Power MOS FET Array ADE-208-1206 (Z) 1st , driver and lamp driver · Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S) 4AK22 , . 4 devices operation 2 4AK22 Electrical Characteristics (Ta = 25°C) (1 Unit) Item Symbol , /µs Note: 1. Pulse Test See characteristic curves of 2SK1254(L), 2SK1254(S) 3 4AK22 , 30 100 300 1,000 Drain to Source Voltage VDS (V) 150 4AK22 Package Dimensions As of
Hitachi Semiconductor
Original
2sk125

Hitachi DSA00397

Abstract: 2SK1254 4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features · Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A , : 2SK1254(L), 2SK1254(S) 4AK22 Outline SP-10 3 D 5 D 4 G 7 D 12 34 56 78 9 10 , °C Notes: 1. PW 10 µs, duty cycle 1% 2. 4 devices operation 2 4AK22 Electrical , 2SK1254(L), 2SK1254(S) 3 4AK22 Maximum Channel Dissipation Curve Maximum Channel Dissipation
Hitachi Semiconductor
Original
Hitachi DSA00397
Abstract: 4AK22 Silicon N-Channel Power MOS FET Array HITACHI Application High speed power switching Features · Low on-resistance Rds«*,) - 0-4 £2, Vos = 10 V, ID= 1.5 A RDS(on) , : 2SK1254(L), 2SK1254(S) 587 4AK22 Outline SP-10 1 So- - , +150 2. 4 devices operation 588 HITACHI 4AK22 Electrical Characteristics (Ta = 25 °C) (1 , 589 4AK22 Maximum Channel Dissipation Curve Condition : Channel Dissipation of e acr\ die is -
OCR Scan

2SK125

Abstract: 2SK1254 HITACHI 4AK22 SILICON N-CHANNEL POWER MOS FET ARRAY HIGH SPEED POWER SWITCHING â  FEATURES 0.4 Q , VQS = 10 V, l0= 1,5 A 0.55 il, V = 4 V, I = 1.5 A â'¢ Low On-Resistance Rds (on) R0$ (on) â'¢ Capable of 4 V Gate Drive â'¢ Low Drive Current â'¢ High Speed Switching â'¢ High Density Mounting â , PIN CONNECTION 2. 4. 6. 8 ; Gate 3. 5. 7. I. 10 ; Dre in ; Sourcc HITACHI 4AK22 â  ELECTRICAL , MAXIMUM HITACHI 4AK22 MAXIMUM SAFE OPERATION AREA 3 IO 30 100 300 Driiin io .Source voilage Vds
-
OCR Scan

FHX04FA

Abstract: 3SK71 28 ±10« ±16 250« 80 1 2 10 1« 6 10 10 4 4AK22 Hi Motor-D MOS N E 120 DSS ±20 s 3 D 28  , 2SK1254 X4 4AK22 525 60 0 10 0. 25 10 2.5 ton=35ns, toff=245nstyp ID=2. 5A, VGS=10V 364A 2SK1300
-
OCR Scan
3SK38 3SK38A 3SK71 4AK15 4AK16 4AK20 FHX04FA FHR10X FHR01FH FHX05FA

6AM12

Abstract: SP12TA 10 72 440 2SK1302 4AK22 120 3 oo 0.35 0.55 0.3 0.4 3.5 25 200 2SK1254 SP-12 (D) 6AM11 60 ±20 5
-
OCR Scan
2SK972 2SK971 2SK973 4AK25 2SK975 4AM13 6AM12 SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK970

2SJ177

Abstract: Hitachi 2SJ . 583
-
OCR Scan
2SJ177 Hitachi 2SJ 2SJ 294 2SJ2 2SJ series 2SJ76 2SJ77 2SJ78 2SJ79 2SJ13 2SJ130CS
Abstract: ) 10 20 Case Temperature 7V (*C ) 945 blE D 4AK22 â  4 4 T b 2 0 5 001371(3 535 â -
OCR Scan

2SH14

Abstract: 2SH21 ) Ratings Package code Type No. ProVDSS(V) (Vosx) 4ÂK15 4AK16 4AK17 4AK18 4AK19 4AK20 4AK21 4AK22
-
OCR Scan
2SK1056 6AM13 2SH11 2SH19 2SH14 2SH21 2SK1197 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352

2SK1778

Abstract: 2sj177 10 72 440 2SK1302 4AK22 120 3 oo 0.35 0.55 0.3 0.4 3.5 25 200 2SK1254 SP-12 (D) 6AM11 60 ±20 5
-
OCR Scan
4AM12 2SK1778 2sk1299 transistor 2sk1304 2SK1919 transistor 2sk 2SJ182 2SJ172 2SJI73 2SK1093 2SK1776

2SK1778

Abstract: 2SK970 10 72 440 2SK1302 4AK22 120 3 oo 0.35 0.55 0.3 0.4 3.5 25 200 2SK1254 SP-12 (D) 6AM11 60 ±20 5
-
OCR Scan
2SK1094 T0220FM 2SK1777 2SK1095 2SK1305 2SK1306

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 10 72 440 2SK1302 4AK22 120 3 oo 0.35 0.55 0.3 0.4 3.5 25 200 2SK1254 SP-12 (D) 6AM11 60 ±20 5
-
OCR Scan
HITACHI Power MOSFET Arrays Hitachi Scans-001 hitachi S Mosfet 2SK974 2SJ214 2SJ219 2SJ220 2SJ242 2SK1648

2SK1275

Abstract: 2SK970 10 72 440 2SK1302 4AK22 120 3 oo 0.35 0.55 0.3 0.4 3.5 25 200 2SK1254 SP-12 (D) 6AM11 60 ±20 5
-
OCR Scan
2SK1275 2SK557 2SK554 4AM14 HITACHI 2SJ* TO-3 2SK1957 2SK1231 2SK1232 2SK622 2SK1135

2SK1254

Abstract: 2sj177 10 72 440 2SK1302 4AK22 120 3 oo 0.35 0.55 0.3 0.4 3.5 25 200 2SK1254 SP-12 (D) 6AM11 60 ±20 5
-
OCR Scan
2SJ176 Mosfet transistor hitachi 2sk1300 to 92 2SK1622 2SK1623

2sj2 high voltage p channel mosfet

Abstract: 2sj2 high voltage mosfet 10 72 440 2SK1302 4AK22 120 3 oo 0.35 0.55 0.3 0.4 3.5 25 200 2SK1254 SP-12 (D) 6AM11 60 ±20 5
-
OCR Scan
2SJ236 2SJ175 2SJ237 2sj2 high voltage p channel mosfet 2sj2 high voltage mosfet 2SJ299 2SK1204 2SK1763 2SI23S

74ls111

Abstract: 2SA872 spice 2SK2220_21 Transistors\Power Mos FETs\MOS FET Arrays 4AJ11 4AK15 4AK16 4AK17 4AK18 4AK19 4AK20 4AK21 4AK22
Hitachi Semiconductor
Original
74ls111 2SA872 spice 74LS122 spice model 74ls221 Spice BC240 hitachi mosfet audio application note 2SB715 2SB738 2SB740 2SB831 2SC1213 2SC1344

2SK975 equivalent

Abstract: k2796 TO-220CFM TO-220FM (2SK2932) 60 2SK1305 100 60 120 SP-10 (array) 4AK18 4AK22 Note: 1 , 2SJ505 4AK18 4AK22 Package TO-220FM TO-220CFM LDPAK TO-220FM DPAK LDPAK TO-22CFM TO-220FM TO-220 DPAK
-
OCR Scan
2SK2728 2SK975 equivalent k2796 POWER MOS FET 2sj 2sk equivalent transistor 2sk TRANSISTOR 2SK 1180 SK1626 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157

2SK2225 equivalent

Abstract: 2SK1762 equivalent -10 (array) 4AK18 4AK22 Note: 1. * Allowable value at Tc = 25°C ( ): under Development 27 1.3 , . 2SK1304 2SK2955 2SK2932 2SK2796(L) 2SJ293 2SJ280 2SJ505 4AK18 4AK22 TO-220FM T0-220CFM LDPAK T0-220FM DPAK
-
OCR Scan
2SK161S 2SK2225 equivalent 2SK1762 equivalent C2373 2sk2221 equivalent 2SK1317 equivalent 2SJ182 equivalent 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626
Showing first 20 results.