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HA1-4900-2/883 Intersil Corporation IC QUAD COMPARATOR, 4000 uV OFFSET-MAX, 180 ns RESPONSE TIME, CDIP16, CERAMIC, DIP-16, Comparator ri Buy
HA1-4900-2 Intersil Corporation IC QUAD COMPARATOR, 4000 uV OFFSET-MAX, 180 ns RESPONSE TIME, CDIP16, CERDIP-16, Comparator ri Buy
4308RV-495XJBD Coilcraft Inc General Fixed Inductor, 1 ELEMENT, 4900 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD ri Buy

4900 SIEMENS

Catalog Datasheet Results Type PDF Document Tags
Abstract: 25 TO-220AB BUZ45 BUZ45 SIEMENS N 500 ±20 9. 6 125 100 20 250 500 2. 1 4.0 10 0. 6 10 5.0 2.7 5.0 4900 , 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO-2Q4AA BUZ71 BUZ71 SIEMENS N 50 ±20 12 40 100 20 250 50 2. 1 4.0 , ) SSS6N60 SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 BSS92 SIEMENS P -200 ±20 -0. 15 1 -100 -20 -60 -200 -0.8 -2.8 -1 20 -10 -0. 1 0. 06 -0. 1 170* 20* 6* -25 TO-92 8SS100 8SS100 SIEMENS N 100 ±20 0.23 0. 63 100 ... OCR Scan
datasheet

1 pages,
61.38 Kb

BUZ45 BUZ41A BUZ11 BUZ50B BSS92 BUZ73 BUZ74A SIEMENS SIEMENS 800 siemens p BUZ24 SSS6N60 BUZ54 BUZ211 2N6155 4900 SIEMENS datasheet abstract
datasheet frame
Abstract: versus frequency Siemens Matsushita Components 5 Bevorzugte Anwendung/Werkstoffe Preferred , Spezifischer Gleichstromwiderstand Resistivity Kernformen Core shapes 6 Siemens Matsushita Components , 4900 0,3 Ring ­ ­ 0,8 4900 0,2 RM, P, EP, Ring ­ ­ ­ 0,3 4900 0,2 Ring, DE ­ ­ 0,2 4900 0,25 Ring, DE ­ ­ ­ 0,4 4900 0,1 RM, P, Q, EP, ER, E, Ring ­ ­ ­ 0,3 4950 0,1 RM, EP, Ring ­ ­ ­ 0 , have been defined on small ring cores ( ... Original
datasheet

9 pages,
520.93 Kb

Siemens efd 30 MT 2800 N ETD 49 ferrite core E55 ferrite core Mn-Zn Ferrites datasheet abstract
datasheet frame
Abstract: 25 TO-220AB BUZ45 BUZ45 SIEMENS N 500 ±20 9. 6 125 100 20 250 500 2. 1 4.0 10 0. 6 10 5.0 2.7 5.0 4900 , 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO-2Q4AA BUZ71 BUZ71 SIEMENS N 50 ±20 12 40 100 20 250 50 2. 1 4.0 , ) Id (a) Vds (V) SSS6N60 SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 BSS92 SIEMENS P -200 ±20 , SIEMENS N 100 ±20 0.23 0. 63 100 20 15 100 0.8 2.8 1 r_T 10 0. 12 0.0? 0. 12 20* 9.0* To*1 25 TO-92 ... OCR Scan
datasheet

2 pages,
115.28 Kb

2N6155 2N6660 2N6661 2N6755 2N6823 2N6826 BUZ11 BUZ211 IXTP4N80A TO-220 2N7002 IXTP7N50A IXTP7N50 IXTP7N45A IXTP7N45 IXTP4N90A datasheet abstract
datasheet frame
Abstract: 25 TO-220AB BUZ45 BUZ45 SIEMENS N 500 ±20 9. 6 125 100 20 250 500 2. 1 4.0 10 0. 6 10 5.0 2.7 5.0 4900 , 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO-2Q4AA BUZ71 BUZ71 SIEMENS N 50 ±20 12 40 100 20 250 50 2. 1 4.0 , ) SSS6N60 SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 BSS92 SIEMENS P -200 ±20 -0. 15 1 -100 -20 -60 -200 -0.8 -2.8 -1 20 -10 -0. 1 0. 06 -0. 1 170* 20* 6* -25 TO-92 8SS100 8SS100 SIEMENS N 100 ±20 0.23 0. 63 100 ... OCR Scan
datasheet

2 pages,
124.79 Kb

SSS6N60 8UZ11 BSS92 BUZ11 BUZ24 BUZ41A BUZ45 BUZ50B BUZ54 BUZ10 siemens Ni 1000 4900 SIEMENS BUZ23 SIEMENS 2N6155 datasheet abstract
datasheet frame
Abstract: EC 146, para. 492.1. H7E D SIEMENS SIEMENS BSM 651 F 134 47E D - fl23SbOS ü02b53M S «SIEG SIEMENS AKTIENGESELLSCHAF BSM 651 F -fûd-ù? Electrical Characteristics at T, = 25 °C, unless otherwise , MHz ClSS _ 3900 4900 PF Output capacitance Vgs = 0, Vds = 25 V,/= 1 MHz Coss _ 250 400 Reverse , Siemens Aktiengesellschaft 135 47E D I SIEMENS AKTIEN6ESELLSCHAF 623SL05 623SL05 ID02bS35 7 «SIEG BSM 651 F , 250 _ ns Reverse recovery charge If = Is, d/f/df = 100 A/us, Vr = 100 V Q" - 1.2 nC Siemens ... OCR Scan
datasheet

7 pages,
304.83 Kb

BSM651F siemens EC 230 98 4900 SIEMENS KDS 7c datasheet abstract
datasheet frame
Abstract: 492 Siemens Matsushita Components ELP 64/10/50 with I 64/5/50 Core B66295 B66295 Combination , AL1min PV nH Ordering code (per piece) nH W/set 4900 < 9,3 B66295-G-X149 B66295-G-X149 (ELP core , Siemens Matsushita Components 493 S +M Siemens Matsushita Components COMPONENTS Disk ... Original
datasheet

3 pages,
104.2 Kb

smd k2 69 SMD code K3 N87 material data MatsuA VARISTORS B66295-G-X187 B66295-G-X149 B66295 4900 SIEMENS SMD code K4 B66295 abstract
datasheet frame
Abstract: SIEMENS BUZ 384 SIPMOS ® Power Transistor • N Channel • Enhancement mode •FREDFET 1 2fé 3 VT05' , , DIN IEC 68-1 55/150/56 Semiconductor Group 1104 6235bü5 GOflMTMl 3bT 07.96 SIEMENS BUZ 384 , 6.5 A fìDS(on) 0.55 0.6 W Semiconductor Group 07.96 1105 07.96 flS35b05 OüflMSSO Dfil - SIEMENS BUZ , A 3fs 2.7 6.7 S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C|SS 3800 4900 PF Output , f?GS = 50 w if 110 140 Semiconductor Group 1106 6E35b05 OOflM^Sl Tlfl - 07.96 SIEMENS BUZ 384 ... OCR Scan
datasheet

9 pages,
267.96 Kb

C67078-A3209-A2 STT 3 SIEMENS datasheet abstract
datasheet frame
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ 385 · N channel · Enhancement mode · FREDFET Type , A Semiconductor Group 1113 07.96 SIEMENS Electrical Characteristics, at 7] = 25°C , Ig s s 10 ^DS(on) 100 Q 0.6 0.8 Semiconductor Group 1114 07.96 SIEMENS , , f= 1 MHz Qss fffs BUZ 385 Values typ. max. Unit S 2.7 6.7 pF 3800 C0ss 4900 , Group 1115 07.96 SIEMENS Electrical Characteristics, at 7} = 25°C, unless otherwise specified ... OCR Scan
datasheet

9 pages,
130.98 Kb

datasheet abstract
datasheet frame
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ 384 · N channel · Enhancement mode · FR ED FET Type , Values 500 Unit V fo 10.5 A Semiconductor Group 1104 07.96 SIEMENS Electrical , SIEMENS Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. , 4900 400 170 ns 50 75 C¡ss Cqss 250 100 v, yGs = 10 V, /D = 2.8 A 80 td(off) R q s -50 , 1106 07.96 SIEMENS Electrical Characteristics, at 7] = 25°C, unless otherwise specified ... OCR Scan
datasheet

9 pages,
134.76 Kb

datasheet abstract
datasheet frame
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ 382 · N channel · Enhancement mode · FREDFET Type , 07.96 SIEMENS Electrical Characteristics, at 7j = 25°C, unless otherwise specified Parameter Symbol , 1096 07.96 SIEMENS Electrical Characteristics, at 7] = 25°C, unless otherwise specified , Goss 300 Crss 120 id(on) 50 tr S 6.2 pF 4900 500 200 ns 75 Output capacitance VGS = 0 V, Vbs = , Group 1097 07.96 SIEMENS Electrical Characteristics, at 7] = 25°C, unless otherwise specified ... OCR Scan
datasheet

9 pages,
142.58 Kb

BUZ 382 datasheet abstract
datasheet frame

Datasheet Content (non pdf)

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! SIEMENS Small Signal Semiconductors ! BFQ70 BFQ70 BFQ70 BFQ70 ! Si NPN RF Bipolar Junction Transistor in CEREC-X ! VCE = 6 V IC = 5 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG 0.600 0.6500 -135.0 6.320 99.0 0.0680 34.0 0.5200 -42.0 0.800 0.6300 -152.0 4.900 88.0 Gammaopt rn/50 ! GHz dB MAG ANG - 0.800 1.30 0.28 79 0.24 ! ! SIEMENS AG
www.datasheetarchive.com/files/siemens/ehdata/spar/bfq70/ad6v05m0-v1.s2p
Siemens 09/08/1994 1.34 Kb S2P ad6v05m0-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFS17P BFS17P BFS17P BFS17P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 3.5 V IC = 1.5 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG 5.077 169.1 0.0184 82.0 0.9904 -4.6 0.100 0.9013 -28.0 4.900 158.6 0.0355 74.0 0.9690 0.6046 -84.6 3.000 0.5864 109.8 0.669 17.2 0.3178 60.5 0.5965 -91.8 ! ! SIEMENS AG
www.datasheetarchive.com/files/infineon/ehdata/spar/bfs17p/rm3v51m5.s2p
Infineon 30/07/1997 2.38 Kb S2P rm3v51m5.s2p
! SIEMENS Small Signal Semiconductors ! BFS17P BFS17P BFS17P BFS17P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 4 V IC = 1.5 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG 5.074 169.1 0.0178 82.0 0.9909 -4.5 0.100 0.9021 -27.7 4.900 158.9 0.0342 74.4 0.9698 0.6152 -82.7 3.000 0.5824 109.9 0.671 17.7 0.3135 61.6 0.6076 -89.8 ! ! SIEMENS AG
www.datasheetarchive.com/files/infineon/ehdata/spar/bfs17p/rm4v01m5.s2p
Infineon 30/07/1997 2.38 Kb S2P rm4v01m5.s2p
! SIEMENS Small Signal Semiconductors ! BFT92W BFT92W BFT92W BFT92W ! Si PNP RF Bipolar Junction Transistor in SOT323 ! VCE = -4 V IC = -4 mA ! Common Emitter S-Parameters: February 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG 0.0847 47.8 0.5785 -40.0 0.500 0.4886 -123.4 4.900 102.7 0.0921 46.1 0.5186 -42.2 0.600 0.3600 -93.2 3.000 0.5212 129.1 1.098 24.9 0.2896 51.5 0.3671 -99.4 ! ! SIEMENS AG
www.datasheetarchive.com/files/infineon/ehdata/spar/bft92w/we4v04m0.s2p
Infineon 14/08/1996 2.38 Kb S2P we4v04m0.s2p
No abstract text available
www.datasheetarchive.com/download/29686886-145335ZC/bf799.zip (RT10V10M.S2P)
Infineon 08/09/2000 355.23 Kb ZIP bf799.zip
! SIEMENS Small Signal Semiconductors ! BF799 BF799 BF799 BF799 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 10 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG 0.0242 48.6 0.7154 -10.9 0.250 0.6235 -161.4 4.900 88.4 0.0265 51.7 0.7093 -11.2 0.300 -99.7 3.000 0.7847 96.5 0.349 28.1 0.4263 69.1 0.7160 -108.8 ! ! SIEMENS AG
www.datasheetarchive.com/files/infineon/ehdata/spar/bf799/rt10v10m.s2p
Infineon 30/07/1997 2.38 Kb S2P rt10v10m.s2p
2.8835 79.6 .1159 27.0 .6042 -47.4 1.700 .4900 -146.1 2.8134 77.9 .1168 ! SIEMENS AG SEMICONDUCTOR GROUP ! Balanstr. 73, D-8000 D-8000 D-8000 D-8000 Munich 80, Federal Republic of
www.datasheetarchive.com/files/siemens/ehdata/spar/bfp181/p31v02m0.s2p
Siemens 30/07/1992 2.67 Kb S2P p31v02m0.s2p
2.1040 57.5 .2150 60.2 .4900 -41.5 2.800 .0555 148.6 1.9815 53.8 .2300 ! SIEMENS AG SEMICONDUCTOR GROUP ! Balanstr. 73, D-8000 D-8000 D-8000 D-8000 Munich 80, Federal Republic of
www.datasheetarchive.com/files/siemens/ehdata/spar/bfr280/r25v05m0.s2p
Siemens 30/07/1992 2.67 Kb S2P r25v05m0.s2p
.4900 -156.6 13.5472 98.2 .0266 59.1 .3785 -33.5 .500 .4923 -164.7 10.9732 SIEMENS AG SEMICONDUCTOR GROUP ! Balanstr. 73, D-8000 D-8000 D-8000 D-8000 Munich 80, Federal Republic of Germany !
www.datasheetarchive.com/files/siemens/ehdata/spar/bfp183/p58v050m.s2p
Siemens 30/07/1992 2.67 Kb S2P p58v050m.s2p
-43.9 .4900 92.1 .28244 51.3 .90772 -37.0 2.200 .83295 -48.2 .5097 86.6 .30181 .5909 14.9 .35493 8.6 .74466 -96.7 ! ! SIEMENS AG Semiconductor Group !
www.datasheetarchive.com/files/siemens/ehdata/spar/bfr180w/w12v0m10.s2p
Siemens 17/09/1992 2.37 Kb S2P w12v0m10.s2p