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HA1-4900-2 Intersil Corporation QUAD COMPARATOR, 4000uV OFFSET-MAX, 180ns RESPONSE TIME, CDIP16, CERDIP-16
TPS254900IRVCTQ1 Texas Instruments USB Charging Port Controller 20-WQFN -40 to 85
TPS254900IRVCRQ1 Texas Instruments USB Charging Port Controller 20-WQFN -40 to 85
TPS54900PWR Texas Instruments IC SPECIALTY ANALOG CIRCUIT, PDSO16, GREEN, PLASTIC, TSSOP-16, Analog IC:Other
TPS54900PW Texas Instruments Four Channel 100mA Step-Down Converters with Serially Controlled Output Voltages 16-TSSOP -40 to 85
TPS54900PWRG4 Texas Instruments SPECIALTY ANALOG CIRCUIT, PDSO16, GREEN, PLASTIC, TSSOP-16

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Part : IDSS-05-S-49.00-ST4 Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : LXC120-4900SW Supplier : Excelsys Technologies Manufacturer : Avnet Stock : - Best Price : €58.0020 Price Each : €72.5025
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4900 SIEMENS

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 0. 6 10 5.0 2.7 5.0 4900 400 170 25 TO-204AA BUZ50B SIEMENS ti 1000 ±20 2 75 100 20 250 1000 2 , ±20 11.5; 125 100 20 250 400 2. 1 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO-2Q4AA BUZ71 SIEMENS N 50  , ! SIEMENS N sool ±20 lol 125 100 20 250 500 2.1 4.0 10 0.8 10 5.0 2.1 5.0 4900 400 170 25 T0 , (a) Vds (V) SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 SIEMENS P -200  -
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BUZ11 BUZ24 2N6155 BUZ211 BUZ54 SIEMENS SI siemens p 8SS100 T0-220AB BUZ64 BUZ72A
Abstract: versus frequency Siemens Matsushita Components 5 Bevorzugte Anwendung/Werkstoffe Preferred , Spezifischer Gleichstromwiderstand Resistivity Kernformen Core shapes 6 Siemens Matsushita Components , 4900 0,3 Ring ­ ­ 0,8 4900 0,2 RM, P, EP, Ring ­ ­ ­ 0,3 4900 0,2 Ring, DE ­ ­ 0,2 4900 0,25 Ring, DE ­ ­ ­ 0,4 4900 0,1 RM, P, Q, EP, ER, E, Ring ­ ­ ­ 0,3 4950 0,1 RM, EP, Ring ­ ­ ­ 0 , have been defined on small ring cores ( EPCOS
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Mn-Zn Ferrites E55 ferrite core MT 2800 N ETD 49 ferrite core ferrite n41 siemens Siemens efd 30 10-6/K
Abstract: 0. 6 10 5.0 2.7 5.0 4900 400 170 25 TO-204AA BUZ50B SIEMENS ti 1000 ±20 2 75 100 20 250 1000 2 , ±20 11.5; 125 100 20 250 400 2. 1 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO-2Q4AA BUZ71 SIEMENS N 50  , ! SIEMENS N sool ±20 lol 125 100 20 250 500 2.1 4.0 10 0.8 10 5.0 2.1 5.0 4900 400 170 25 T0 , (a) Vds (V) SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 SIEMENS P -200  -
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BUZ23 SIEMENS siemens Ni 1000 BUZ10 BUZ45 BUZ41A 8UZ11 8UZ63 T0-204AA BUZ71A BUZ74 BUZ76 BUZ171
Abstract: -220AB BUZ45 SIEMENS N 500 ±20 9. 6 125 100 20 250 500 2. 1 4.0 10 0. 6 10 5.0 2.7 5.0 4900 400 170 25 TO , -220AB BUZ64 SIEMENS N 400 ±20 11.5; 125 100 20 250 400 2. 1 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO , ) SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 SIEMENS P -200 ±20 -0. 15 1 -100 -20 -60 -200 -0.8 -2.8 -1 20 -10 -0. 1 0. 06 -0. 1 170* 20* 6* -25 TO-92 8SS100 SIEMENS N 100 ±20 0.23 0 -
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XTP4N80 IXTP4N80A IXTP4N90 IXTP7N45 IXTP7N45A IXTP7N50 1N7001 1N7000 IXTP4N90A T0-220
Abstract: /m ). S hape-related dimensions have a tolerance of up to + 5% Siemens Matsushita Components 51 , all core shapes listed in this table. i 2) Measured a l t ~ 4 0 kHz Siemens , > 150 > 130 > 130 > 130 > 130 > 130 > 130 - 0,6 4800 - 0,8 4900 -0,3 4900 0.2 4900 - -0,4 4900 - -0,3 4950 io"®/k 0,5 kg/m3 - 4700 DF P 10*6 12m 2 RM, P, EP, Q 0,5 0,2 0,2 0 , ring cores (< R 10) Siemens Matsushita Components 53 Material properties (continued -
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etd 49 core ferrite Ring Core matsua Siemens Ferrite n72 100-C
Abstract: Siemens Matsushita Components are used in S0 interface transformers for ISDN systems. But the Siemens , , E ring T35 6000 390 12 130 4900 0.2 RM, P, EP ring T37 6500 380 9 130 4900 0.2 DE, ring T44 8000 400 10 130 4900 0.25 DE, ring T38 10000 380 9 130 4900 0.1 RM, P, Q, E , Darmstadt University of Technology and joined Siemens AG in 1983 as a design engineer for ferrites. Since , testing, and applications engineering at Siemens Matsushita Components GmbH & Co. KG in Munich. 3 Siemens Matsushita Components
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ferrite core geometry N30 transformer core ferrite core transformer design ferrite N30 hysteresis magnetic loops FERRITES T44 N26 core transformer
Abstract: Ringkerne T35 6000 390 12 130 4900 0,2 RM, P, EP Ringkerne T37 6500 380 9 130 4900 0,2 DE-Kerne Ringkerne T44 8000 400 10 130 4900 0,25 DE-Kerne Ringkerne T38 10000 380 9 130 4900 0,1 RM, P, Q, E R, E Ringkerne T42 12000 400 7 130 4950 0,1 RM, EP Tabelle Vergleich , Siemens AG ein. Seit 1989 ist der Leiter der Entwicklung für Ferritkernbauformen, Meßtechnik und Applikationstechnik bei der Siemens Matsushita Components GmbH & Co. KG in München. 3 Siemens Matsushita Siemens Matsushita Components
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Abstract: -220AB BUZ64 SIEMENS N 400 ±20 11.5; 125 100 20 250 400 2. 1 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO , TO-220 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 SIEMENS P -200 ±20 -0. 15 1 -100 -20 -60 -200 -0.8 -2.8 -1 20 -10 -0. 1 0. 06 -0. 1 170* 20* 6* -25 TO-92 8SS100 SIEMENS N 100 ±20 0.23 0. 63 100 20 15 100 0.8 2.8 1 r_T 10 0. 12 0.0? 0. 12 20* 9.0* To*1 25 TO-92 BSStOI SIEMENS N 200 ±20 _ju6j 0.63 100 20 15 200 0.8 2.8 1 12 10 -
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BS170 BSS123 BUZ73 BUZ80A BUZ84A buzh buz90 251C F133 BSI07A
Abstract: -220AB BUZ45 SIEMENS N 500 ±20 9. 6 125 100 20 250 500 2. 1 4.0 10 0. 6 10 5.0 2.7 5.0 4900 400 170 25 TO , -220AB BUZ64 SIEMENS N 400 ±20 11.5; 125 100 20 250 400 2. 1 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO , SAMSUNG N 600 0. 85 4 TO-220 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 SIEMENS P -200 ±20 -0. 15 1 -100 -20 -60 -200 -0.8 -2.8 -1 20 -10 -0. 1 0. 06 -0. 1 170* 20* 6* -25 TO-92 8SS100 SIEMENS N 100 ±20 0.23 0. 63 100 20 -
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2N6756 2N6757 2N6758 2N6759 2N676 2N6761 2n6800 2N6823 2N6826 BUZ-64 2N6764 2N6763 2N6755
Abstract: Combination UI 93/104/20 N27 4900 + 30/­ 20 % 1790 3420 < 8 (100 mT, 25 kHz, 100 °C) B67345-B10-X27 (U) B67345-B11-X27 (I) Siemens Matsushita Components 575 Siemens Siemens
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B67345
Abstract: EC 146, para. 492.1. H7E D SIEMENS SIEMENS BSM 651 F 134 47E D â  fl23SbOS ü02b53M S «SIEG SIEMENS AKTIENGESELLSCHAF BSM 651 F -fûd-ù? Electrical Characteristics at T, = 25 °C, unless , , Vds = 25 V,/= 1 MHz ClSS _ 3900 4900 PF Output capacitance Vgs = 0, Vds = 25 V,/= 1 MHz Coss _ 250 , - 110 140 Siemens Aktiengesellschaft 135 47E D I SIEMENS AKTIEN6ESELLSCHAF 623SL05 ID02bS35 7 , nC Siemens Aktiengesellschaft 136 M7E D I SIEMENS AKTIENGESELLSCHAF A23Sb05 002bS3b «SIEG BSM -
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BSM651F KDS 7c siemens EC 230 98 T-25-01 C67076-A1500-A2 SIM00196
Abstract: SIEMENS BUZ 384 SIPMOS ® Power Transistor â'¢ N Channel â'¢ Enhancement mode â'¢FREDFET 1 2fà , climatic category, DIN IEC 68-1 55/150/56 Semiconductor Group 1104 6235bü5 GOflMTMl 3bT 07.96 SIEMENS , OüflMSSO Dfil â  SIEMENS BUZ 384 Electrical Characteristics, at 7] = 25°C, unless otherwise specified , 4900 PF Output capacitance VGS = 0 V, VDs = 25 V, f = 1 MHz Coss 250 400 Reverse transfer capacitance , SIEMENS BUZ 384 Electrical Characteristics, at 71 = 25°C, unless otherwise specified Parameter Symbol -
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C67078-A3209-A2 STT 3 SIEMENS ScansUX7 TRANSISTOR 2FE
Abstract: SIEMENS SIPMOS® Power Transistors · · · N channel Enhancement mode FREDFET Type BUZ 210 BUZ , W "C ^ t h JC < 1 .0 c 55/150/56 K/W - 514 SIEMENS Electrical Characteristics at 7J , transconductance ^DS 2 X £fs 2.7 5.3 3800 250 100 50 80 330 110 4900 400 170 75 120 430 140 S / D , SIEMENS Electrical Characteristics (cont'd) at 7j = 25 "C, unless otherwise specified. Parameter Symbol , charge l/ R = 100 V, l F = Is , d /F / d; = 100 A/|js Sem iconductor Group 516 SIEMENS -
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UZ210 kds 210 67078-A1102-A2 C67078-A1100-A2 210/B SIL02771
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ 382 · N channel · Enhancement mode · FREDFET Type , 07.96 SIEMENS Electrical Characteristics, at 7j = 25°C, unless otherwise specified Parameter Symbol , 1096 07.96 SIEMENS Electrical Characteristics, at 7] = 25°C, unless otherwise specified , Goss 300 Crss 120 id(on) 50 tr S 6.2 pF 4900 500 200 ns 75 Output capacitance VGS = 0 V, Vbs = , Group 1097 07.96 SIEMENS Electrical Characteristics, at 7] = 25°C, unless otherwise specified -
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BUZ 382 C67078-A3207-A2
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ 385 · N channel · Enhancement mode · FREDFET Type , A Semiconductor Group 1113 07.96 SIEMENS Electrical Characteristics, at 7] = 25 , Ig s s 10 ^DS(on) 100 Q 0.6 0.8 Semiconductor Group 1114 07.96 SIEMENS , , f= 1 MHz Qss fffs BUZ 385 Values typ. max. Unit S 2.7 6.7 pF 3800 C0ss 4900 , Group 1115 07.96 SIEMENS Electrical Characteristics, at 7} = 25°C, unless otherwise specified -
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buz 385 buz385 C67078-A3210-A2
Abstract: SIEMENS SIPMOS ® Power Transistor BUZ 384 · N channel · Enhancement mode · FR ED FET Type , Values 500 Unit V fo 10.5 A Semiconductor Group 1104 07.96 SIEMENS Electrical , SIEMENS Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min , 4900 400 170 ns 50 75 C¡ss Cqss 250 100 v, yGs = 10 V, /D = 2.8 A 80 td(off) R q s -50 , 1106 07.96 SIEMENS Electrical Characteristics, at 7] = 25°C, unless otherwise specified -
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Abstract: ) Preliminary data 492 Siemens Matsushita Components ELP 64/10/50 with I 64/5/50 Core B66295 , 4900 < 9,3 B66295-G-X149 (ELP core) (50 mT, 500 kHz, 100 °C) B66295-P-X149 (I core) 14000 ± 25 , : 480 nH < AL < 4800 nH 1) Preliminary data Siemens Matsushita Components 493 S +M Siemens Matsushita Components COMPONENTS Disk varistors from stock The choice is yours In our , like our block, strap and SMD varistors. SCS ­ dependable, fast and competent Siemens Siemens
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B66295-G-X187 SMD code K4 N87 material data SMD code K3 k4 smd MatsuA VARISTORS FEK0345-1 FEK0346-9 B66295-P-X187
Abstract: SIEMENS SIPMOS® Power Transistors â'¢ N channel â'¢ Enhancement mode â'¢ FREDFET BUZ 210 BUZ 211 , category, DIN IEC 68-1 55/150/56 1) See chapter Package Outlines. 514 AE35bOS OObflCHl SET â  SIEMENS , MHz C- - 3800 4900 pF Output capacitance VGS = 0 V, VdS = 25 V,/= 1 MHz c OSS - 250 400 Reverse , 110 140 Ã235b05 DObötne IbS â  Semiconductor Group 515 SIEMENS BUZ 210 BUZ 211 Electrical , Semiconductor Group 516 SIEMENS BUZ 210 BUZ 211 Characteristics at 7] = 25 *C, unless otherwise specified. Total -
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BUZ210 Diode MFW 16 buz 210 Diode MFW 25 MFW diode TC-130-W C67078-A1102-A2 21Q/BUZ
Abstract: ÛÛD D fl235b05 Q ü m b 3 0 7 « S I E G 88D 14630 D 7 "V ' 3 ^ " 7 3 BUZ 48 A SIEMENS , accordance with DIN 50014. C -0 7 ÔÔD D 88D ô23SbGS Q014b31 ñ M S I E G 14631 D SIEMENS , ) t, 5,0 3800 250 100 50 80 330 110 4900 400 170 75 120 430 140 S PF rD l'os = 25V = , > d 88D 6SBSba5 a o m b 3 2 o 14632 D hsieg SIEMENS AKTIENGESELLSCHAF Power , 88D 14633 D T ' 3 ^ / 3 BUZ 48 A SIEMENS A K T I E N G E S E L L S C H A F -Draln-source -
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so344 C67078-A1605-A3 23/SO C--11
Abstract: KIT, 4900 MHZ TO 5000 MHZ, DIRECT 10-30 VDC INPUT WITH SEPARATE ETHERNET CONNECTOR, EQUIPPED WITH , http://ruggedcomselector.automation.siemens.com Siemens RUGGEDCOM http://siemens.com/ruggedcom , http://support.automation.siemens.com letzte Ã"nderung: Feb 24, 2014 © Siemens AG 2014 - Corporate Information - Privacy Policy - Terms of Use Siemens Siemens
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WIN5149-5-DC 1024/512FFT MIL-STD-810F RS-111
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