NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 25 TO-220AB BUZ45 BUZ45 SIEMENS N 500 ±20 9. 6 125 100 20 250 500 2. 1 4.0 10 0. 6 10 5.0 2.7 5.0 4900 , 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO-2Q4AA BUZ71 BUZ71 SIEMENS N 50 ±20 12 40 100 20 250 50 2. 1 4.0 , ) SSS6N60 SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 BSS92 SIEMENS P -200 ±20 -0. 15 1 -100 -20 -60 -200 -0.8 -2.8 -1 20 -10 -0. 1 0. 06 -0. 1 170* 20* 6* -25 TO-92 8SS100 8SS100 SIEMENS N 100 ±20 0.23 0. 63 100 ... | OCR Scan |
1 pages, |
BUZ45 siemens p SIEMENS 800 BUZ74A SIEMENS BSS92 BUZ50B BUZ11 BUZ41A BUZ24 SSS6N60 BUZ54 BUZ211 2N6155 4900 SIEMENS 8SS89 SSS6N60 abstract |
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| Abstract: 25 TO-220AB BUZ45 BUZ45 SIEMENS N 500 ±20 9. 6 125 100 20 250 500 2. 1 4.0 10 0. 6 10 5.0 2.7 5.0 4900 , 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO-2Q4AA BUZ71 BUZ71 SIEMENS N 50 ±20 12 40 100 20 250 50 2. 1 4.0 , ) SSS6N60 SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 BSS92 SIEMENS P -200 ±20 -0. 15 1 -100 -20 -60 -200 -0.8 -2.8 -1 20 -10 -0. 1 0. 06 -0. 1 170* 20* 6* -25 TO-92 8SS100 8SS100 SIEMENS N 100 ±20 0.23 0. 63 100 ... | OCR Scan |
2 pages, |
SSS6N60 8UZ11 BSS92 BUZ11 BUZ23 SIEMENS BUZ24 BUZ41A BUZ45 BUZ50B BUZ54 siemens Ni 1000 BUZ10 4900 SIEMENS 2N6155 8SS89 SSS6N60 abstract |
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| Abstract: 25 TO-220AB BUZ45 BUZ45 SIEMENS N 500 ±20 9. 6 125 100 20 250 500 2. 1 4.0 10 0. 6 10 5.0 2.7 5.0 4900 , 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO-2Q4AA BUZ71 BUZ71 SIEMENS N 50 ±20 12 40 100 20 250 50 2. 1 4.0 , ) Id (a) Vds (V) SSS6N60 SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 BSS92 SIEMENS P -200 ±20 , SIEMENS N 100 ±20 0.23 0. 63 100 20 15 100 0.8 2.8 1 r_T 10 0. 12 0.0? 0. 12 20* 9.0* To*1 25 TO-92 ... | OCR Scan |
2 pages, |
2N6155 2N6660 2N6661 2N6755 2N6823 2N6826 BUZ11 BUZ211 IXTP4N80A TO-220 2N7002 IXTP7N50A IXTP7N50 IXTP7N45A IXTP7N45 IXTP4N90A XTP4N80 IXTP4N80A XTP4N80 abstract |
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| Abstract: EC 146, para. 492.1. H7E D SIEMENS SIEMENS BSM 651 F 134 47E D â- fl23SbOS ü02b53M S «SIEG SIEMENS AKTIENGESELLSCHAF BSM 651 F -fûd-ù? Electrical Characteristics at T, = 25 °C, unless otherwise , MHz ClSS _ 3900 4900 PF Output capacitance Vgs = 0, Vds = 25 V,/= 1 MHz Coss _ 250 400 Reverse , Siemens Aktiengesellschaft 135 47E D I SIEMENS AKTIEN6ESELLSCHAF 623SL05 623SL05 ID02bS35 7 «SIEG BSM 651 F , 250 _ ns Reverse recovery charge If = Is, d/f/df = 100 A/us, Vr = 100 V Q" - 1.2 nC Siemens ... | OCR Scan |
7 pages, |
siemens EC 230 98 KDS 7c BSM651F 4900 SIEMENS T-25-01 T-25-01 abstract |
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| Abstract: 492 Siemens Matsushita Components ELP 64/10/50 with I 64/5/50 Core B66295 B66295 Combination , AL1min PV nH Ordering code (per piece) nH W/set 4900 < 9,3 B66295-G-X149 B66295-G-X149 (ELP core , Siemens Matsushita Components 493 S +M Siemens Matsushita Components COMPONENTS Disk ... | Original |
3 pages, |
smd k2 69 B66295-G-X187 B66295-G-X149 B66295 SMD code K4 B66295 abstract |
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| Abstract: SIEMENS BUZ 384 SIPMOS ® Power Transistor • N Channel • Enhancement mode •FREDFET 1 2fé 3 VT05' , , DIN IEC 68-1 55/150/56 Semiconductor Group 1104 6235bü5 GOflMTMl 3bT 07.96 SIEMENS BUZ 384 , 6.5 A fìDS(on) 0.55 0.6 W Semiconductor Group 07.96 1105 07.96 flS35b05 OüflMSSO Dfil â- SIEMENS BUZ , A 3fs 2.7 6.7 S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C|SS 3800 4900 PF Output , f?GS = 50 w if 110 140 Semiconductor Group 1106 6E35b05 OOflM^Sl Tlfl â- 07.96 SIEMENS BUZ 384 ... | OCR Scan |
9 pages, |
C67078-A3209-A2 datasheet abstract |
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| Abstract: 25 TO-220AB BUZ45 BUZ45 SIEMENS N 500 ±20 9. 6 125 100 20 250 500 2. 1 4.0 10 0. 6 10 5.0 2.7 5.0 4900 , 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO-2Q4AA BUZ71 BUZ71 SIEMENS N 50 ±20 12 40 100 20 250 50 2. 1 4.0 , ) Vds (V) SSS6N60 SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 BSS92 SIEMENS P -200 ±20 -0. 15 1 -100 -20 -60 -200 -0.8 -2.8 -1 20 -10 -0. 1 0. 06 -0. 1 170* 20* 6* -25 TO-92 8SS100 8SS100 SIEMENS N 100 ... | OCR Scan |
3 pages, |
SSS6N60 BS170 BSS123 bup 314 BUZ11 BUZ23 SIEMENS BUZ71 BUZ71A BUZ73 siemens Ni 1000 F133 251C BUZ84A BUZ80A buz90 BSI07A BS170 BSI07A abstract |
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| Abstract: 25 TO-220AB BUZ45 BUZ45 SIEMENS N 500 ±20 9. 6 125 100 20 250 500 2. 1 4.0 10 0. 6 10 5.0 2.7 5.0 4900 , 4.0 10 0.40 10 5 3.3 5 4900 500 200 25 TO-2Q4AA BUZ71 BUZ71 SIEMENS N 50 ±20 12 40 100 20 250 50 2. 1 4.0 , ) Vds (V) SSS6N60 SSS6N60 SAMSUNG N 600 0. 85 4 TO-220 8SS89 8SS89 SIEMENS N 200 ±20 0. 30 1 100 20 60 200 0.8 2.8 1 6.0 10 0.4 0.14 0.4 110* 20* 5* 25 TO-9 2 BSS92 BSS92 SIEMENS P -200 ±20 -0. 15 1 -100 -20 -60 -200 -0.8 -2.8 -1 20 -10 -0. 1 0. 06 -0. 1 170* 20* 6* -25 TO-92 8SS100 8SS100 SIEMENS N 100 ... | OCR Scan |
3 pages, |
2N6755 2N6756 2N6757 2N6758 2N6759 2N676 2N6761 2N6762 2N6763 2N6764 IXTP4N90A IXTP4N90 BUZ54 BUZ211 2N6823 2N6755 abstract |
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| Abstract: SIEMENS SIPMOS® Power Transistors • N channel • Enhancement mode • FREDFET BUZ 210 BUZ 211 Type vDS , 68-1 55/150/56 1) See chapter Package Outlines. 514 AE35bOS OObflCHl SET â- SIEMENS BUZ 210 BUZ 211 , /?DS(on)max . Ad = 6.5 A 2.7 5.3 s Input capacitance yGS = 0 V, yDS = 25 V,/= 1 MHz C- - 3800 4900 pF , Semiconductor Group 515 SIEMENS BUZ 210 BUZ 211 Electrical Characteristics (cont'd) at 7] = 25 'C, unless , /s, dip / d/ = 100 A/ps Grr - 0.65 1.2 flP35b05 00bfl0R3 DTI Semiconductor Group 516 SIEMENS BUZ 210 ... | OCR Scan |
8 pages, |
buz 210 C67078-A1102-A2 C67078-A1100-A2 C67078-A1102-A2 abstract |
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| Abstract: boards 372 Siemens Matsushita Components P 26 Ã- 16 Core B65671 B65671 q In accordance with IEC , B65671-D1000-J26 B65671-D1000-J26 Ungapped Material AL value ue N26 N30 T38 N67 nH 4900 + 30/Â 20 % 9700 + 30/Â , the required version. Siemens Matsushita Components 373 P 26 Ã- 16 Accessories B65672 B65672 , washer 1 374 Insulating washer 2 Siemens Matsushita Components P 26 Ã- 16 Accessories , solder terminals Siemens Matsushita Components 375 P 26 Ã- 16 Accessories B63399 B63399 B65679 B65679 ... | Original |
8 pages, |
matsushita 219 B65672-B-T1 B65672 B65671 B63399 4900 SIEMENS B65671-D1000-J26 datasheet abstract |
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| ! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 .720 94.0 0.0600 68.0 0.5400 -23.0 0.800 0.2000 -163.0 4.320 79.0 0.0900 69.0 0.4900 -49 .0 0.1300 69.0 0.5000 -27.0 1.500 0.2100 156.0 2.410 60.0 0.1600 68.0 0.4900 -30.0 1.800 0.2300 140.0 2.050 53.0 0.1900 67.0 0.4900 -36.0 2.000 0.2500 131.0 1.920 49.0 0.2100 65.0 0.4700 -37.0 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri10v20m.s2p |
Siemens | 10/08/1994 | 0.98 Kb | S2P | ri10v20m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 6 V IC = 5 mA ! Common Emitter S-Parameters: July 1993 # GHz .270 106.0 0.0800 58.0 0.5900 -35.0 0.800 0.2800 -128.0 4.190 88.0 0.1100 57.0 0.4900 -35.0 1.000 0.2600 -144.0 3.450 81.0 0.1300 59.0 0.4900 -36.0 1.200 0.2400 -160.0 2.930 74 .2200 58.0 0.4000 -46.0 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri6v05m0.s2p |
Siemens | 10/08/1994 | 0.97 Kb | S2P | ri6v05m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 15 mA ! Common Emitter S-Parameters: July 1993 .000 96.0 0.0600 66.0 0.5300 -26.0 0.800 0.1900 -151.0 4.490 81.0 0.0900 67.0 0.4900 -25.0 1.000 0.1900 -166.0 3.650 76.0 0.1100 68.0 0.4900 -27.0 1.200 0.1900 180.0 3.090 71 .2100 64.0 0.4500 -38.0 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri10v15m.s2p |
Siemens | 10/08/1994 | 0.98 Kb | S2P | ri10v15m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR93A BFR93A BFR93A BFR93A ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 8 V IC = 5 mA ! Common Emitter S-Parameters: October 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .9300 -21.0 0.200 0.6400 -81.0 10.500 129.0 0.0520 57.0 0.7300 -30.0 0.500 0.4900 -132.0 5 .000 0.4000 160.0 1.700 54.0 0.1940 71.0 0.4400 -48.0 ! ! SIEMENS AG Semiconductor Group www.datasheetarchive.com/files/siemens/ehdata/spar/bfr93a/rl8v05m0-v1.s2p |
Siemens | 10/08/1994 | 0.91 Kb | S2P | rl8v05m0-v1.s2p |
| ! SIEMENS Small Signal Semiconductors ! CFY19-18 CFY19-18 CFY19-18 CFY19-18 ! GaAs FET in CEREC-X ! VDS = 3.5 V ID = 10 .5 0.0980 -7.2 0.5000 -108.3 7.800 0.5200 176.1 1.910 8.5 0.0970 -8.4 0.4900 -111.3 8 .0980 -10.7 0.4800 -117.6 8.400 0.5000 159.9 1.850 -3.6 0.0990 -11.4 0.4700 -120.8 8.600 0.4900 154.6 1.820 -7.6 0.0990 -12.0 0.4600 -124.2 8.800 0.4900 149.5 1.810 -11.5 0.1000 -12.8 0.4600 -127.6 9.000 0.4900 144.1 1.790 -15.6 0.1010 -14.0 0.4600 -131.2 9.200 0.4900 139 www.datasheetarchive.com/files/siemens/ehdata/spar/cfy19_18/c83v510m.s2p |
Siemens | 10/08/1994 | 4.63 Kb | S2P | c83v510m.s2p |
| ! SIEMENS Small Signal Semiconductors ! CFY19-22 CFY19-22 CFY19-22 CFY19-22 ! GaAs FET in CEREC-X ! VDS = 3.5 V ID = 10 .5 0.0980 -7.2 0.5000 -108.3 7.800 0.5200 176.1 1.910 8.5 0.0970 -8.4 0.4900 -111.3 8 .0980 -10.7 0.4800 -117.6 8.400 0.5000 159.9 1.850 -3.6 0.0990 -11.4 0.4700 -120.8 8.600 0.4900 154.6 1.820 -7.6 0.0990 -12.0 0.4600 -124.2 8.800 0.4900 149.5 1.810 -11.5 0.1000 -12.8 0.4600 -127.6 9.000 0.4900 144.1 1.790 -15.6 0.1010 -14.0 0.4600 -131.2 9.200 0.4900 139 www.datasheetarchive.com/files/siemens/ehdata/spar/cfy19_22/c73v510m.s2p |
Siemens | 10/08/1994 | 4.35 Kb | S2P | c73v510m.s2p |
| .2000 51.0 0.4900 -49.0 ! ! SIEMENS AG Semiconductor Group, Munich ! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 6 V IC = 2 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9100 -15.0 6.490 161.0 0.0300 79.0 0 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri6v02m0.s2p |
Siemens | 10/08/1994 | 0.97 Kb | S2P | ri6v02m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 5 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .9500 -9.0 0.300 0.6500 -57.0 8.560 125.0 0.0600 63.0 0.8000 -25.0 0.500 0.4900 -84.0 6 .2100 58.0 0.4700 -43.0 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri10v5m0.s2p |
Siemens | 10/08/1994 | 0.98 Kb | S2P | ri10v5m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 1 V IC = 1 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .5210 -112.6 1.920 89.8 0.2250 32.9 0.5910 -50.2 1.000 0.4900 -121.7 1.790 84.0 0.2290 30.8 0.5590 -52.4 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri1v01m0.s2p |
Siemens | 10/08/1994 | 1.17 Kb | S2P | ri1v01m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BAR17 BAR17 BAR17 BAR17 ! Si PIN Diode in SOT23 ! IF = 1 mA ! S-Parameters: September 0 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.4620 -178.7 0.100 0.4710 178.9 0.200 0.4700 176.3 0.300 0.4700 173.9 0.400 0.4740 171.3 0.500 0.4750 169 .000 0.4830 157.8 1.100 0.4860 155.6 1.200 0.4910 153.5 1.300 0.4890 151.4 1.400 0.4900 .5300 125.4 2.800 0.5320 123.6 2.900 0.5350 121.9 3.000 0.5410 120.3 ! ! SIEMENS AG www.datasheetarchive.com/files/siemens/ehdata/spar/bar17/rqv001m0-v1.s1p |
Siemens | 08/08/1994 | 0.98 Kb | S1P | rqv001m0-v1.s1p |