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Part Manufacturer Description Datasheet BUY
TMS664814-12DGE Texas Instruments 8MX8 CACHE DRAM, 8ns, PDSO54 visit Texas Instruments
DAC4814BP Texas Instruments Quad 12-Bit Digital-to-Analog Converter (Serial Interface) 28-PDIP -40 to 85 visit Texas Instruments
TMS664814-10DGE Texas Instruments 8MX8 SYNCHRONOUS DRAM, 7.5ns, PDSO54 visit Texas Instruments
TMS664814-10DGER Texas Instruments 8MX8 CACHE DRAM, 7.5ns, PDSO54, PLASTIC, TSOP2-54 visit Texas Instruments
DAC4814AP Texas Instruments Quad 12-Bit Digital-to-Analog Converter (Serial Interface) 28-PDIP -40 to 85 visit Texas Instruments
TMS664814-8DGE Texas Instruments 8MX8 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 visit Texas Instruments

4814 mosfet

Catalog Datasheet MFG & Type PDF Document Tags

transistor BC 575

Abstract: 4814 mosfet %. 4-814 Motorola TMOS Power MOSFET Transistor Device Data MTP12P10 TYPICAL ELECTRICAL CHARACTERISTICS o à , Temperature 4-814 Motorola TMOS Power MOSFET Transistor Device Data MTP12P10 SAFE OPERATING AREA INFORMATION , 1000 Figure 9. Thermal Response 4-814 Motorola TMOS Power MOSFET Transistor Device Data MTP12P10 Figure , Figure 12. Switching Test Circuit Figure 13. Switching Waveforms 4-814 Motorola TMOS Power MOSFET , ~"worst casa" design. â  â  - REV 1 Motorola TMOS Power MOSFET Transistor Device Data 4-813 MTP12P10
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AN569 transistor BC 575 4814 mosfet mosfet 4813 4814 transistor CD 4814 4814

4814 mosfet chip

Abstract: TLE7183F Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOSFET , MOSFETs Separate input for each MOSFET PWM frequency up to 30kHz Fulfils specification down to 5.5V , with TTL characteristics Separate source connection for each MOSFET Integrated minimum dead time , Qualified VQFN-48-14 Description The TLE7183F is a driver IC dedicated to control the 6 to 12 , Vpower net. Type Options Package Marking TLE7183F SCD1 VQFN-48-14 TLE7183SCD1
Infineon Technologies
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4814 mosfet chip TLE183F CB 4814 Tle7183 circuit diagram of single phase water pump TLE7183SCD2

mosfet K 2865

Abstract: PHILIPS RF MOSFET depletion MARKING MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET , package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching , Product specification N-channel single gate MOSFET THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1 , specification N-channel single gate MOSFET BF1107 handbook, halfpage 2 S 0 MBK831 21(on) (dB
Philips Semiconductors
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mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING M3D088 MSB003 SCA60

Dual-Gate Mosfet

Abstract: PHILIPS MOSFET MARKING föregående meddelande ELFA artikelnr. 71-306-85 BF990A trans MOSFET SOT143 Antal sidor: 09 DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File , N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION · Protected against excessive input , 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A , MOS-FET BF990A STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER
Philips Semiconductors
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Dual-Gate Mosfet 2.F 1 marking dual-gate fet dual gate sot143 FET marking code fet MARKING g2 MAM039 SCA52

PHILIPS MOSFET MARKING

Abstract: passive loopthrough gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET FEATURES , field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET , Semiconductors Preliminary specification Silicon N-channel single gate MOSFET BF1107 THERMAL , MOSFET 40 Ptot (mW) 30 20 10 0 0 40 80 120 160 TS (°C) Fig.2 Power
Philips Semiconductors
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passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 115102 4466 8 pin mosfet pin voltage SCA59

BF990A

Abstract: 4814 mosfet DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification , specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION · Protected against , ; VG2-S = 4 V 2 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET , N-channel dual-gate MOS-FET BF990A STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified , specification N-channel dual-gate MOS-FET BF990A PACKAGE OUTLINE handbook, full pagewidth 0.75
Philips Semiconductors
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BF989

Abstract: MOSFET 4466 DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification , specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION · Protected against , Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 LIMITING VALUES , Product specification N-channel dual-gate MOS-FET BF989 STATIC CHARACTERISTICS Tj = 25 °C unless , specification N-channel dual-gate MOS-FET BF989 PACKAGE OUTLINE handbook, full pagewidth 3.0 2.8
Philips Semiconductors
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MOSFET 4466 BP317
Abstract: Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 50 50 80 38 4814 1324 842 300 321 98 , parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the , equivalent size MOSFET produced without SyncFET(FDS6676). Additional SyncFET Characteristics 34 V DS Fairchild Semiconductor
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FDQ7698S SO-14

BB405

Abstract: BF998WR DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product , Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES , N-channel dual-gate MOS-FET BF998WR LIMITING VALUES In accordance with the Absolute Maximum Rating , specification N-channel dual-gate MOS-FET BF998WR THERMAL CHARACTERISTICS SYMBOL PARAMETER , Product specification N-channel dual-gate MOS-FET BF998WR MGC470 MGC471 24 24 3V V G2
Philips Semiconductors
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BB405 MGC480 MAM198 SCA55

mosfet K 2865

Abstract: 4814 mosfet DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product , Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES , in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with , specification N-channel dual-gate MOS-FET BF909WR LIMITING VALUES In accordance with the Absolute , Product specification N-channel dual-gate MOS-FET BF909WR THERMAL CHARACTERISTICS SYMBOL
Philips Semiconductors
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MAM192

BC337

Abstract: BC337-10 TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic , resistor drive circuit Control of power MOSFET and supply of overload protection circuits derived from , 175 m FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP POWER INPUT MOSFET RIG LOGIC , LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp , voltage Input series resistance II = 1.5 mA to gate of power MOSFET VIS = 6 V VIS = 5 V VIS =
Philips Semiconductors
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BUK107-50DS BC337 BC337-10 bc337 texas SCA54

BUK107-50GL

Abstract: TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic , of power MOSFET and supply of overload protection circuits derived from input Low operating input , 200 m FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP POWER INPUT MOSFET RIG LOGIC , LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp , voltage2 Input clamping voltage Input series resistance II = 1.5 mA to gate of power MOSFET VIS =
Philips Semiconductors
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BUK107-50GL

4466 8 pin mosfet pin voltage

Abstract: 501 mosfet transistor TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic , of power MOSFET and supply of overload protection circuits derived from input Low operating input , MOSFET RIG LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT223 , LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp , voltage3 Input clamping voltage Input series resistance II = 1.5 mA to gate of power MOSFET VIS =
Philips Semiconductors
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BUK107-50DL 501 mosfet transistor

EL 817 c337

Abstract: transistor c337 transistor Logic level TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a , circuit Control of power MOSFET and supply of overload protection circuits derived from input ESD , MOSFET is actively turned on to clamp overvoltage transients. SYMBOL EdS M Edrm PARAMETER Non-repetitive , 400 3.5 - UNIT V m ^ a V|SR V (C L )IS R |G I, = 1.5 mA to gate of power MOSFET 1 6 - , 4894 339/239, Fax. +30 1 4814 240 H ungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A
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EL 817 c337 transistor c337 c337 transistor C337 W 61 DS4005 BUK107-50

bridge rectifier 8341

Abstract: BP317 500 V MOSFET Fig.1. Typical application, output rectifier in boost converter power factor , Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria
Philips Semiconductors
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BYC5B-600 bridge rectifier 8341 BYC5-600 SCA56

BYC5-600

Abstract: BP317 typ OUTPUT DIODE inductive load IL 500 V MOSFET Fig.1. Typical application, output , Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria
Philips Semiconductors
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MGE001

Abstract: MGE003 typical application that uses a MOSFET is given in Fig.8. In this circuit the resistive divider is , . The output current pulse will charge the gate of the MOSFET. As a result, the MOSFET will be , supply voltage will reset the standby state. To keep the MOSFET conductive, a high ohmic pull-up resistor is connected between the gate of the MOSFET and the buffer capacitor C1. This is necessary , at the output (and thus at the gate of the MOSFET) to a typical value of 6.8 V. Output driver
Philips Semiconductors
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UBA2000T IEC926 MGE001 MGE003 MGE008 philips led lamp SCDS47

BP317

Abstract: BYC8-600 typ OUTPUT DIODE inductive load IL 500 V MOSFET Fig.1. Typical application, output , 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd
Philips Semiconductors
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BYC8-600

philips resistor 2322-195

Abstract: silicon planar transistor die and two silicon MOS-FET dies mounted on a metallized ceramic AlN substrate , . 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary
Philips Semiconductors
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philips resistor 2322-195 M3D167 BGY916 MSA447

bridge rectifier 8341

Abstract: BP317 500 V MOSFET Fig.1. Typical application, output rectifier in boost converter power factor , 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd
Philips Semiconductors
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BYC10B-600 BYC10-600
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