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47kii

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Abstract: SIEMENS NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R i=4.7kii, R2=47kii) BCR116W & Type BCR 116W Marking Ordering Code WGs UPON INQUIRY Pin Configuration LU Package O II CO C M 1= B SOT-323 li Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, Ts = 124°C Junction temperature Storage temperature -
OCR Scan
Abstract: ±5fllrFF -40Vmax(typ 30V) 3 1/7 ?ttiillES-â â  200mA max y i 5 V T'ffitftâ  â  1.8kQ~500kQ (typ 47kii) 9 -f 5 V , = 3.5V -2.0 2.0 5.0 10 250 1.0 .V=0.00VF,i,T=47kii CT=0.001;iF,R7 = 47kSi 4f.c T, = 25 V. Vcc=TV -
OCR Scan
MC34060 MC35060 ct0001 CT-01 MC350 S45C 10//F MC34060/MC35060
Abstract: mV PG Lowest Voltage VOL 19 2 Vcc = 9V, 47kii applied to Pin@^5V 0.5 V FG Lowest Voltage V OL 29 4 Vcc = 9V, 47kii applied to Pin@^5V 0.5 V BEF Fetch Voltage Vbfg 4 Vcc = Vâ'ž = 9V 0.6 1.0 V -
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AN6387 comparator 9v 9v servo motor
Abstract: Circuit current while off icch 1 Vcc=Vs typ./0.85V, Rl=°o 1.0 1.8 PA "H"transport delay time tpLH 2 RL=4.7kii, Cl=100pF *1 30 60 US "L"transport delay time tpHL 2 RL=4.7kii, Cl=100pF *1 7 20 us Operation -
OCR Scan
PST572 PST572DM PST572C Mitsumi 572 PST5721 PST572G 1/20R
Abstract: KSR1014 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) â'¢ Switching circuit, Inverter. Interface circuit Driver circuit â'¢ Built in bias Resistor(Ri = 4.7Kii, R ,=47K!i) â'¢ Complement toKSR2014 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol Rating VcBO VcEO V ebo lc Pc 50 50 10 -
OCR Scan
KSR2014
Abstract: SIEMENS PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (Ri=10k£î, R2=47kiî) BCR 185 Type BCR 185 Marking Ordering Code WNs Q62702-C2263 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, 7g = 102°C Junction temperature Storage temperature Symbol VcEO Values 50 50 6 20 -
OCR Scan
transistor 7g
Abstract: SIEMENS NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit »Built in bias resistor (R1=4.7kiî, R2=4.7kfi) BCR 512 Type BCR 512 Marking Ordering Code XFs Q62702-C2445 Pin Configuration 1= B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, Ts = 79 °C Junction temperature Storage temperature Symbol ''CEO Values 50 50 10 -
OCR Scan
Abstract: KSR1106 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) SOT-23 â'¢ Switching Circuit, Inverter, Interface circuit Driver circuit â'¢ Built in bias Resistor (R,=10Kii, R2=47Kii) â'¢ Complement to KSR2106 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VcBO VcEO V ebo lc Pc Ti -
OCR Scan
Abstract: SIEMENS PNP Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (Ri = 10kii, Rg = 47kii) BCR 185W _EL nr Pin Configuration o I! CO LT Type BCR 185W Marking Ordering Code WNs Q62702-C2280 Package SOT-323 1= B 2=E Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, T$ = 124°C Junction temperature -
OCR Scan
Abstract: SIEMENS NPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit * Two (galvanic) internal isolated Transistors in one package · Built bias resistor (R1=4.7kiî) BCR119S Type BCR119S Marking Ordering Code Pin Configuration WKs Q62702-C2415 1=E1 2=B1 4=E2 5=B2 CD II o Package SOT-363 O II CO CM Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, Ts = -
OCR Scan
Abstract: SAMSUNG SEMICONDUCTOR.INC 14E D J 71L414S 0007031 7 | KSR1101 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) â'¢ Switching Circuit, Inverter, Interface circuit Driver circuit â'¢ Built in bias Resistor (R,=4.7KO R;=4.7KIi) â'¢ Complement to KSR2101 ABSOLUTE MAXIMUM RATINGS (Ta=25°C). t [ Characteristic i Symbol Rating Unit â'¢ Collector-Base Voltage VcBO 50 V I Collector-Emitter Voltage Veto 50 V i Emitter-Base Voltage Vebo 10 V \ Collector Current lc 100 mA i Collector -
OCR Scan
T-35-U
Abstract: = 200mVi i?8 = 4.7kii â'" 80 dB H K H it It 7 >- 7s OFF â'" 17.5 â'" mA t 1 Ã' Ì) Vin * / 7 -
OCR Scan
HA1196 hitachi HA1196 fsca 38KHZ hitachi Stereo Demodulator st VCO
Abstract: SIEMENS NPN Silicon Digital Transistor 1Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2ki2, R2=47kii) BCR 108 Type BCR 108 Marking Ordering Code WHs Q62702-C2253 Pin Configuration LU II C V J O II CO Package SOT-23 1= B Maximum Ratings Parameter Coliector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, Ts = 102°C Junction temperature Storage temperature -
OCR Scan
Q62702C2253 transistor bI 240 108 Marking
Abstract: SIEMENS BCR 108S NPN Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit â Two (galvanic) internal isolated Transistors in on package â'¢ Built in bias resistor (R1=2.2kfl, R2=47kii) Marking Ordering Code Pin Configuration Package w PO 1=E1 2=B1 CM Q62702-C2414 CJl II WHs CM LU II BCR 108S o II 00 Type 6=C1 SOT-363 Maximum Ratings Parameter Symbol Collector-emitter voltage Values -
OCR Scan
235LD5 BCR108S
Abstract: Conditions ON OFF 'l IpSL Output Leakage Current Logic Supply Current Ru = 4.7kiï l|H IlL V|H VlL V oh Output -
OCR Scan
LS1014 relay 5v RAS-0510 QQ1353 7121S3
Abstract: SIEMENS BCR 185 PNP Silicon Digital Transistor â'¢ Switching circuit, inverter, interface circuit, driver circuit â'¢ Built in bias resistor (Ri=10ki!, R2=47kii) Type Marking Ordering Code Pin Configuration BCR 185 WNs Q62702-C2263 1=B Package 2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Collector-emitter voltage ^CEO 50 Collector-base voltage ^CBO 50 Emitter-base voltage ^EBO 6 Input on Voltage Unit V ^i(on -
OCR Scan
Abstract: . Selected gain: 1,4dB. R,- 47kii, R2 - 47kiJ, R3-130k£J, Râ'ž - 47kii, Rs- 47k£J, R6- 130kil C,- 330pf -
OCR Scan
FX611 FX611J FX611LG 1N4148 D/611/6 433619MH
Abstract: SIEMENS NPN Silicon Digital Transistor Array · Switching circuit, inverter, interface circuit, driver circuit · Two (galvaniv) internal isolated Transistors driver circuit · Built in bias resistor (R1=47kQ, R2=47Kii) BCR 148S Type BCR 148S Marking Ordering Code Pin Configuration O CM LU II II CO CM o II Package co 5=B2 SOT-363 WEs Q62702-C2417 1=E1 2=B1 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total -
OCR Scan
Marking Code ZI MARKING wes sot363 SOT363 wes ZI Marking Code transistor
Abstract: SIEMENS PNP S ilicon D igital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (R1 = 4.7kiî) BCR 169 F L W Type BCR 169 Marking Ordering Code WSs Q62702-C2340 nr Pin C onfiguration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, T$ = 102°C Junction temperature Storage temperature Symbol VCEO l/CBO Vebo ^¡(on) > C -
OCR Scan
marking code sot-23 697 marking code sot23 697
Abstract: KSR2204 SWITCHING APPLICATION PNP EPITAXIAL SILICO N TRANSISTO R (B ia s R e sisto r BuHt In) · Switching circuit, Inverter, Interface circuit, Driver Circuit · Built in bias Resistor (Ri "47kQ, Rj»47kii) · Complement to KSR1204 A BSO LUTE MAXIMUM RATINGS (Ta*251C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Sym bol VcBO VcEO V ebo Rating -50 -50 -10 -100 300 150 -5 5 -
OCR Scan
TA-25
Abstract: KSR1014 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) â'¢ Switching circuit, Inverter. Interface circuit Driver circuit â'¢ Built in bias Resistor(Ri = 4.7Kii, R ,=47K!i) â'¢ Complement toKSR2014 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol Rating VcBO VcEO V ebo lc Pc 50 50 10 -
OCR Scan
H9 transistor marking TRANSISTOR MARKING 707 transistor h9 SC-74 DTC114YKA SC-70 SC-59
Abstract: SIEMENS NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R i=4.7kii, R2=47kii) BCR116W & Type BCR 116W Marking Ordering Code WGs UPON INQUIRY Pin Configuration LU Package O II CO C M 1= B SOT-323 li Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, Ts = 124°C Junction temperature Storage temperature -
OCR Scan
C4 Package transistor b 647 c SC-74A DTC144EKA DTA114YKA
Abstract: connection. EP[1- 12]: Eternai pull-up required, terminate to V cc by a 4.7-kii resistor PIN INFORMATION -
OCR Scan
hcpl 1360 HCPL-3700 HCPL-3760 HCPL-3700/60
Abstract: ±5fllrFF -40Vmax(typ 30V) 3 1/7 ?ttiillES-â â  200mA max y i 5 V T'ffitftâ  â  1.8kQ~500kQ (typ 47kii) 9 -f 5 V , = 3.5V -2.0 2.0 5.0 10 250 1.0 .V=0.00VF,i,T=47kii CT=0.001;iF,R7 = 47kSi 4f.c T, = 25 V. Vcc=TV -
OCR Scan
CNW138 BS415 BS7002 BS6301 u035 VDE 0303 Teil 31 85630 B5415 CNW138/CNW139 E90700
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