NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: FMG1 40 30* DTC124EKX2 DTC124EKX2 Ground 22kfi/22kfi SOT-25 Hg. 2 FMG2 40 30* DTC144EKX2 DTC144EKX2 Ground 47kn/47kiî SOT-25 , 4.7kiî/10kiî SOT-25 Hg. 2 FMA9 -50* -50" DTA114EKX2 DTA114EKX2 Ground 10kiî/10kfî SOT-25 Hg. 2 FMA10 FMA10 -50* -100 , DTC114TKX2 DTC114TKX2 10MV - SOT-25 Hg. 2 FMG8 30 100 DTC143ZKX2 DTC143ZKX2 Ground 4.7kfi/47kii SOT-25 Hg. 2 FMG9 50* 50 ... | OCR Scan |
1 pages, |
sot-25 transistor DTC114EKX2 SOT25 FMG2 equivalent fmg1 rohm 2SA1037KX2 2SA1037KX2 abstract |
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| Abstract: i 5 V T'ffitftâ- â- 1.8kQ~500kQ (typ 47kii) 9 -f 5 V 0.0047~10//F 10//F(typ 0.001,/F) HJg««»'"lkHz~200kHz , Vn = 0 ^ V 0.3 vm= 3.5V -2.0 2.0 5.0 10 250 1.0 .V=0.00VF,i,T=47kii CT=0.001;iF,R7 = 47kSi ... | OCR Scan |
2 pages, |
S45C MC350 MC35060 MC34060 MC34060 abstract |
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| Abstract: SAMSUNG SEMICONDUCTOR INC T-35- T-35-|Ì4E D | 7^4142 0DG7G3â S | KSR1014 KSR1014 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) • Switching circuit, Inverter, interface circuit Driver circuit • Bullt in bias Reslstor(R, = 4.7KÌÌ, R,=47KD) • Complement toKSR2014 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 50 V Collector-Emilter Voltage VcEO 50 V Emitter-Base Voltage Vebo 10 V Collector Current lc 100 mA Collector Dissipation Pc 300 ... | OCR Scan |
1 pages, |
T-35- KSR1014 T-35- abstract |
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| Abstract: SAMSUNG SEMICONDUCTOR INC T-SS'H IME D | 7^4142 GDO?Dâb S | KSR1214 KSR1214 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) • Switching circuit, Inverter. Interface circuit Driver circuit • Built in bias Resistor(R, = 4.7K«, R,=47Kii) • Complement to KSR2214 KSR2214 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 50 V Collector-Emitter Voltage VcEO 50 V Emitter-Base Voltage Vebo 10 V Collector Current lc 100 mA Collector Dissipation Pc 300 ... | OCR Scan |
1 pages, |
KSR1214 KSR2214 KSR1214 abstract |
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| Abstract: 0.26 0.4 0.58 mA /fe(ai) Cj-=0.1Ã/F,fir=47kÃi /= 100Hz 0.9 1.0 1.1 )=Tllf< Cr=0.1iiF,Â7.=47k£î(a2 ... | OCR Scan |
1 pages, |
MB4207 MB4207 abstract |
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| Abstract: PST5721 1.0 1.8 PA "H"transport delay time tpLH 2 RL=4.7kii, Cl=100pF *1 30 60 US "L"transport delay time tpHL 2 RL=4.7kii, Cl=100pF *1 7 20 us Operation limit voltage VopL 1 Ri =4.7kil, Vol< 0.4V 0.65 ... | OCR Scan |
6 pages, |
PST572J ammeter DC PST572E PST572G PST572I PST572D mmp-3a PST572F PST572H Mitsumi 572 PST572DM PST572 PST572C PST572 abstract |
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| Abstract: Comparator Offset Voltage V KofiseDM 2 VCC = 9V -6 6 mV PG Lowest Voltage VOL 19 2 Vcc = 9V, 47kii applied to Pin@^5V 0.5 V FG Lowest Voltage V OL 29 4 Vcc = 9V, 47kii applied to Pin@^5V 0.5 V BEF Fetch ... | OCR Scan |
4 pages, |
AN6387 9v servo motor AN6387 abstract |
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| Abstract: SAMSUNG SEMICONDUCTOR.INC 14E D J 71L414S 71L414S 0007031 7 | KSR1101 KSR1101 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7KO R;=4.7KIi) • Complement to KSR2101 KSR2101 ABSOLUTE MAXIMUM RATINGS (Ta=25°C). t [ Characteristic i Symbol Rating Unit • Collector-Base Voltage VcBO 50 V I Collector-Emitter Voltage Veto 50 V i Emitter-Base Voltage Vebo 10 V \ Collector Current lc 100 mA i Collector ... | OCR Scan |
2 pages, |
KSR2101 KSR1101 71L414S 71L414S abstract |
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| Abstract: SAMSUNG SEMICONDUCTOR INC_ 1MB D | 71b4ma 0007101 fl | KSR2008 KSR2008 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) » Switching circuit« Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=47Kiî, R,=22K0) • Complement to KSR1008 KSR1008 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VcEO -50 V Emitter-Base Voltage VgBO -10 V Collector Current Ic -100 mA Collector Dissipation Pc 300 ... | OCR Scan |
2 pages, |
KSR2008 KSR1008 KSR2008 abstract |
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| Abstract: SAMSUNG SEMICONDUCTOR INC_ IME D | 711,4145 0007101 fl | KSR2008 KSR2008 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION {Bias Résister Built In) » Switching circuit« Inverter, Interface circuit Driver circuit • Built in bias Reslator (R,=47Kiî, R,=22K0) • Complément to KSR1008 KSR1008 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VcEO -50 V Emitter-Base Voltage VgBO -10 V Collector Current Ic -100 mA Collector Dissipation Pc 300 mW ... | OCR Scan |
2 pages, |
KSR2008 KSR1008 KSR2008 abstract |
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| Abstract: DA312H DA312H DURACELI. 3.00 mm MIN. CONTACT 0 1 - f ! i / I \ i . + 3.80 mm MIN CONTACT 0 7.80 mm MAX. 0 7.55mm MIN. 0.28 mm DIA. CENTRAL AIR ACCESS HOLE. Battery Compartment must allow free access of air to activate the battery. * Higher current possible under intermittent conditions. ZINC AIR Specification: Nominal Voltage: 1.4V Nominal Capacity: 70 mAh Life: 61 hon 1 kfì to 0.9 Vat 20°C Max. Continuous Current: 5.2 mA* Nominal Impedance: 2.5Ì2 Recomm. Load Range at 20 ... | OCR Scan |
1 pages, |
zinc air pr41 PR41 DA312H Battery duracell pr41 DA312H abstract |
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| Abstract: "SAMSUNG SEMICONDUCTOR . INC IME D J 7*^4145 0007031 7 | KSR1101 KSR1101 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7KO R;=4.7KIi) • Complement to KSR2101 KSR2101 ABSOLUTE MAXIMUM RATINGS (Ta=25°C). t I Characteristic I Symbol Rating Unit • Collector-Base Voltage VcBO 50 V I Collector-Emitter Voltage Veto 50 V i Emitter-Base Voltage Vebo 10 V I Collector Current lc 100 mA i Collector Dissipation ... | OCR Scan |
2 pages, |
KSR1101 KSR2101 KSR1101 abstract |
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| Abstract: Ordering number: EN2381 EN2381 I i SAVVO 2SA1564/2SC4048 2SA1564/2SC4048 PNP/ NPN Epitaxial Planar Silicon Transistors Switching Applications _(with Bias Resistance) v Applications . Switching circuit, inverter circuit, interface circuit, driver ciffcuit/ Features • On-chip bias resistance: Rj = 10ka, R2 = 47kiî « Small"Sized package: SPA ( ): 2SA1564 2SA1564 Absolute Kaxlaua Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Collector ... | OCR Scan |
2 pages, |
C4048 2SA1564 EN2381 2SA1564/2SC4048 EN2381 abstract |
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