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46VSS

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Abstract: ) GND potentialPin 4, 36, 37, 45, 46VSS potentialPin 15, 20 Any state must become the lowest voltage ... Original
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5 pages,
140.89 Kb

HTSSOP-B54 bm5446 BM5446EFV HTSSOP-B54 abstract
datasheet frame
Abstract: power supply and GND pins. 3) GND potentialPin 4, 36, 37, 45, 46VSS potentialPin 15, 20 Any state must ... Original
datasheet

5 pages,
162.27 Kb

HTSSOP-B54 BM5446EFV HTSSOP-B54 abstract
datasheet frame
Abstract: power supply and GND pins. 3) GND potentialPin 4, 36, 37, 45, 46VSS potentialPin 15, 20 Any state must ... Original
datasheet

5 pages,
162.26 Kb

bm5446 HTSSOP-B54 BM5446EFV HTSSOP-B54 abstract
datasheet frame
Abstract: ZEN2024F24 ZEN2024F24�SI 2 ZEN2011P33McpsMAX4 ZEN2011P ZEN2011P 24 [�h] 33Mcps MAX f=33MHz MAX,50% 2 DC8.25MHz MAX (f�4) DC16.5MHz MAX (f�2) N.C. UD/AB1 UD/AB0 Vdd RESET Vss CLK Vss N.C. DIR1 LT1 LD1 DIR0 LT0 LD0 2 2 1/2/42 242 0 1 1 (Top View) 0 2 2OR 45 31 46 Vss A/UP0 B/DN0 Z/CLR0 A/UP1 B/DN1 Z/CLR1 Vdd EXTB0 EXTA0 N.C. EXTB1 EXTA1 Vss N.C. Vss SEL12 SEL12 SEL11 SEL11 SEL10 SEL10 SEL02 SEL02 SEL01 SEL01 SEL00 SEL00 Vdd CHS C/D CE WR RD V ... Original
datasheet

2 pages,
155.97 Kb

ZEN2024F 60PIN ZEN2011P ZEN2024F24 ZEN2024F24 abstract
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Abstract: Product Brief SEMTECH WIRELESS & SENSING PRODUCTS XE1205 XE1205 Narrowband High-Performance Multi-Channel UHF-band Transceiver WORLD'S HIGHEST LINK BUDGET TRANSCEIVER Highest link-budget BiCMOS UHF-band FSK transceiver with data rates up to 304.6 kbit/second and narrowband capability Key Features: · Typical link budget of 131 dB at 4.8 kbits/s, 0.1% BER WITHOUT external LNA or PA · Rx sensitivity -121 dBm (typical) @ 1.2 kbit/s, 0.1% BER · Tx output +15 dBm (typical) · Da ... Original
datasheet

2 pages,
487.36 Kb

SX1223 nRF905 TDA5250 transceiver nrf905 ad7021 TRF6901 tx 433 saw VQFN-48 CC1100 CC1020 AD702 nRF903 XE1205 ad-7021 XE1205 abstract
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Abstract: Advance Information IEEE1394 IEEE1394 LINK Layer LSI for DVB and DSS DescriptionJ The CXD1948R CXD1948R is a LINK Layer LSI conforming to the IEEE1394-1995 IEEE1394-1995 serial bus standard. During transmission, the MPEG2 transport stream is time stamped, transformed to IEEE1394 IEEE1394 format and sent to the IEEE1394 IEEE1394 Phy IC. During reception, the signal from IEEE1394 IEEE1394 Phy IC is kept in the built-in FIFO, synchronized to the time stamp value and output. This IC utilizes Apple Computer's Fire Wire technology. SONY CXD1948R CXD1948R Fea ... OCR Scan
datasheet

2 pages,
50.54 Kb

IEEE1394 CXD1948R IEEE1394-1995 IEEE1394 abstract
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Abstract: PREPARED BY: DATE LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION SPEC No. LC94X10 LC94X10 FILE No. ISSUE OCT.12. 1994 APPROVED BY: DATE PAGE 25 Pages APPLICABLE DIVISION -DUTY PANEL DEVELOPMENT CENTER - TFT DEVELOPMENT CENTER - LCD PRODUCTS DEVELOPMENT SP EC I F I CAT ION CENTER - EL PRODUCTION DEPT. SPECIFICATION FOR Passive Mat r i x LCD Modul e Model No. LM6 4 K 1 1 - CUSTOMER'S APPROVAL DATE_ PRESENTED^ _BY_BY " ¿/v ^//VUTU Y. Inoue 7 Department Gen ... OCR Scan
datasheet

4 pages,
130.2 Kb

640X480 FF6-16A LCD DISPLAY MODULE sharp lm6 LM64* sharp lcd SHARP lcd Inverter sharp lcd lm6 sharp lcd panel 20 pin DDK Connectors sharp lcd 21 pins lc94x10 INVERTER FOR EL SHARP PANEL LM64K11 LC94X datasheet abstract
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Abstract: MSM51V16190 MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 MSM51V16190 is OKI's CMOS silicon gate process technology. The device operates at a single 3.3V power supply. Its I/O pins are LVTTL compatible. FEATURES • Silicon gate, quadruple polysilicon double metal CMOS, 1 transistor memory cell • 1,048,576-word x 18-bit organization ... OCR Scan
datasheet

6 pages,
289.3 Kb

MSM51V16190-80 MSM51V16190-70 50-PIN 42-PIN tsop50 M5116 Bv 42 transistor MSM51V16190 MSM51V16190 abstract
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Abstract: MSM5116190 MSM5116190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 MSM5116190 is OKI's CMOS silicon gate process technology. The device operates at a single 5V power supply. Its I/O pins are TTL compatible. FEATURES • Silicon gate, quadruple polysilicon double metal CMOS, 1 transistor memory cell • 1,048,576-word x 18-bit organization • Sin ... OCR Scan
datasheet

6 pages,
289.06 Kb

MSM5116190-80 MSM5116190-70 42-PIN tsop50 Bv 42 transistor MSM5116190 MSM5116190 abstract
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Abstract: OKI Semiconductor MSM51V17190 MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 MSM51V17190 is OKI's CMOS silicon gate process technology. The device operates at a single 3.3V power supply. Its I/O pins are LVTTL compatible. FEATURES • Silicon gate, quadruple polysilicon double metal CMOS, 1 transistor memory cell • 1,048,576-word x ... OCR Scan
datasheet

6 pages,
289.7 Kb

tsop50 oki Package SOJ MSM51V17190-80 MSM51V17190-70 CI 576 42-PIN Bv 42 transistor 51V17190 MSM51V17190 51V17190 abstract
datasheet frame
Abstract: ( 25 A) 0.7A (LM5021-1 LM5021-1 80%LM5021-2 LM5021-2 50%) (LM5021-1 LM5021-1 ) (UVLO) Hiccup : MSOP-8 MDIP-8 20050509 © National Semiconductor Corporation DS201442-02-JP DS201442-02-JP 1 LM5021 LM5021 AC-DC PWM LM5021 LM5021 composed for release on CODE S per Campbell. SN composed for Code R. SN composed with edits on text and graphics. SN added engineering disclaimer (on Pr ... Original
datasheet

15 pages,
526.21 Kb

MUA08A LM5020 12v dc to 8.5v dc LM5021 LM5021-2 LM5021 abstract
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Abstract: r z 7 SGS-THOMSON ^7# BUW44/BUW45 BUW44/BUW45 BUW46 BUW46 HIGH VOLTAGE, HIGH CURRENT POWER SWITCH DESCRIPTIO N The BUW44 BUW44, BUW45 BUW45 and BUW46 BUW46 are multiepitaxial mesa NPN transistors in Jedec TO-3 metal case intended in fast switching applications for high output powers. TO-3 ABSO LU TE M AXIM UM RATING S S ym bo l < o m (ft P a ra m e te r BU W 44 Collector-emitter Voltage ( V Be = 0) Collector-emitter Voltage ( I b = 0) Emitter-base Voltage ( lc = 0 ) Collector Current Collector Peak Current Base ... OCR Scan
datasheet

4 pages,
97.67 Kb

BUW45 buw44 BUW44/BUW45 BUW46 BUW44 BUW44/BUW45 abstract
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Abstract: LM5021 LM5021 (PWM) LM5021 LM5021 (25 1 A) (ENERGY STAR® CECP ) Hiccup (Hiccup ) 8 LM5021 LM5021 100ns 1MHz ( 25 A) 0.7A (LM5021-1 LM5021-1 80%LM5021-2 LM5021-2 50%) (LM5021-1 LM5021-1 ) (UVLO) Hiccup : MSOP-8 MDIP-8 20050509 © Nationa ... Original
datasheet

15 pages,
568.79 Kb

MUA08A LM5021 LM5020 HICCUP LM5021-2 LM5021 abstract
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