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LTM4604EV#PBF Linear Technology LTM4604 - Low Voltage, 4A DC/DC µModule (Power Module) Regulator with Tracking; Package: LGA; Pins: 66; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTM4604AEV#PBF Linear Technology LTM4604A - Low Voltage, 4A DC/DC µModule (Power Module) Regulator with Tracking; Package: LGA; Pins: 66; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTM4604IV#PBF Linear Technology LTM4604 - Low Voltage, 4A DC/DC µModule (Power Module) Regulator with Tracking; Package: LGA; Pins: 66; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTM4604AIV#PBF Linear Technology LTM4604A - Low Voltage, 4A DC/DC µModule (Power Module) Regulator with Tracking; Package: LGA; Pins: 66; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

4604 mosfet

Catalog Datasheet MFG & Type PDF Document Tags

Mosfet

Abstract: SSF4604 SSF4604 30V Complementary MOSFET DESCRIPTION The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power , 4604 1 2 3 4 S1 G1 S2 G2 Marking and Pin Assignment ●High Power and current , ORDERING INFORMATION Device Marking Device Device Package Reel Size 4604 SSF4604 SOP-8 à , Typ â"ƒ/W Max Rev.1.0 Unit SSF4604 30V Complementary MOSFET Drain-Source Breakdown
Good-Ark
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Mosfet 4604 mosfet

SSF4604

Abstract: SOP-8 SSF4604 DESCRIPTION The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES D1 D1 D2 D2 N-Channel 8 , RDS(ON) < 87m @ VGS=-4.5V RDS(ON) < 52m @ VGS=-10V 7 6 5 4604 1 2 3 4 S1 G1 , Device Device Package Reel Size 4604 SSF4604 SOP-8 top view Tape width 12mm Ø330mm
Silikron Semiconductor
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SOP-8 4604 inverter MOSFET 4604 4604 Switching 24v inverters schematic diagram Transistor Mosfet N-Ch 30V

MOSFET 4604

Abstract: 4604 mosfet LF BUK9Y15-100E 9 May 2013 PA K 56 N-channel 100 V, 15 m logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8 , BUK9Y15-100E N-channel 100 V, 15 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pin , May 2013 2 / 13 NXP Semiconductors BUK9Y15-100E N-channel 100 V, 15 m logic level MOSFET in , logic level MOSFET in LFPAK56 103 IAL (A) 102 003aai776 10 (1) 1 (2) (3) 10-1 10-3
NXP Semiconductors
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Abstract: The gate of an external N-Channel MOSFET is connected to this terminal. This output transitions to a , ) Level-2-260C-1 YEAR Level-2-260C-1 YEAR Level-2-260C-1 YEAR Level-2-260C-1 YEAR 4602 4602 4604 4604 Texas Instruments
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ISO/TS16949
Abstract: MOSFET is connected to this terminal. This output transitions to a high level when an overvoltage , Level-2-260C-1 YEAR -40 to 85 4604 BQ294604DRVT ACTIVE SON DRV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 4604 (1) The marketing Texas Instruments
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Abstract: The gate of an external N-Channel MOSFET is connected to this terminal. This output transitions to a , 4602 4604 4604 (1) The marketing status values are defined as follows: ACTIVE: Product device Texas Instruments
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4604 mosfet

Abstract: tl 173 4-604 Motorola TMOS Power MOSFET Transistor Device Data MTD20P06HDL TYPICAL ELECTRICAL , t o v e ra ll v a lu e . REV 1 Motorola TMOS Power MOSFET Transistor Device Data 4-599 , - nH LS - 7.5 - nH 4-600 Motorola TMOS Power MOSFET Transistor Device Data , . Drain-To-Source Leakage Current versus Voltage Motorola TMOS Power MOSFET Transistor Device Data 4-601 MTD20P06HDL POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing
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OCR Scan
tl 173 la 4601 n
Abstract: MOSFET is connected to this terminal. This output transitions to a high level when an overvoltage , 4604 BQ294604DRVT ACTIVE SON DRV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 4604 (1) The marketing status values are defined as follows Texas Instruments
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j 6815 transistor

Abstract: TRANSISTOR J 6815 EQUIVALENT /Feb.'02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W , RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W TYPICALCHARACTERISTICS RD00HVS1 P in -P o u , Silicon MOSFET Power Transistor 175MHz,0.5W ·TYPICALCHARACTERISTICS t.o 0.9 0.8 0.7 0.6 ^ 0 , MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W Vgg Vdd ·EQUIVALENT CIRCUIT(f , date:26 /Feb.'02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz
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OCR Scan
j 6815 transistor TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 175MH 48MAX
Abstract: date:25 /Nov.â'™02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz , DEVICES MITSUBISHI RF POWER MOS FET Revision date:25 /Nov.â'™02 RD00HVS1 Silicon MOSFET Power , ^/Nov.â'™Ol MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W , MITSUBISHI RF POWER MOS FET Revision date:25th/Nov.â'™02 RD00HVS1 Silicon MOSFET Power Transistor , FET Revision date:25th/Nov.â'™02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W -
OCR Scan

30U6P42

Abstract: MG15G6EL1 MOS-FET 2SK358 as the power device. Table 1 shows the parts used and the cir cuit constants. 1.1 3 , L2 and capacitors C7 and Cg could be made smaller and lighter Thus, the MOS-FET 2SK358, which easily , switching characteristics m ust be used the MOS-FET used here is suitable for high frequency operation and , applied between the gate and source o f the MOSFET. (5) Secondary side rectifying and filtering cir cuit , Characteristics (1) Operation waveforms Figure 4 (a ) shows the operation waveforms for MOS-FET drain current Id
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OCR Scan
TA76524P MG10G6EL2 MG15G6EL1 MG20G6EL1 MG50G6EL1 MG150H2YL1 30U6P42 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 24VDC 110VAC 100VAC 5L6P43 100L6P43

XC6209xxxxxx

Abstract: PARAMETER SETTING OUTPUT VOLTAGE E-0 OUTPUT VOLTAGE (V) (1%) VOUT MIN MAX 4.505 4.554 4.604 4.653 4.703 , P-channel MOSFET, which is connected to the VOUT pin, is then driven by the subsequent output signal. The
Torex Semiconductor
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XC6209xxxxxx XC6209 XC6209/XC6212 XC6209/12 XC6209/XC6212S

5252 f 1110

Abstract: 4.604 4.653 4.703 4.752 4.802 4.851 4.901 4.950 4.000 4.049 4.099 4.148 5.198 5.247 5.297 5.346 5.396 , P-channel MOSFET, which is connected to the VOUT pin, is then driven by the subsequent output signal. The
Torex Semiconductor
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5252 f 1110 XC6209/6212 ETR0306-002 XC6209E

XC6209

Abstract: XC6212 ) (1%) VOUT MIN 4.505 4.554 4.604 4.653 4.703 4.752 4.802 4.851 4.901 4.950 4.000 4.049 , internal reference voltage by the error amplifier. The P-channel MOSFET, which is connected to the VOUT
Torex Semiconductor
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XC6212 8 pin ic 3773 transistor c 5586

C 5763 transistor

Abstract: 8 pin ic 3773 5.90 5.95 6.00 MIN 4.505 4.554 4.604 4.653 4.703 4.752 4.802 4.851 4.901 4.950 4.000 4.049 4.099 , reference voltage by the error amplifier. The P-channel MOSFET, which is connected to the VOUT pin, is then
Torex Semiconductor
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4410 mosfet

Abstract: IC 723 voltage regulator -0 OUTPUT VOLTAGE (V) (1%) VOUT MIN 4.505 4.554 4.604 4.653 4.703 4.752 4.802 4.851 4.901 , error amplifier. The P-channel MOSFET, which is connected to the VOUT pin, is then driven by the
Torex Semiconductor
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4410 mosfet IC 723 voltage regulator sot-23-5 5R pa 4010 IC ETR0306

mark E4 SOT-23-5

Abstract: XC6209 -0 OUTPUT VOLTAGE (V) (1%) VOUT MIN 4.505 4.554 4.604 4.653 4.703 4.752 4.802 4.851 4.901 , error amplifier. The P-channel MOSFET, which is connected to the VOUT pin, is then driven by the
Torex Semiconductor
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mark E4 SOT-23-5 F302 5252 F 4-pin 5252 F 1120

C 5763 transistor

Abstract: 5252 f 1110 -0 OUTPUT VOLTAGE (V) (1%) VOUT MIN 4.505 4.554 4.604 4.653 4.703 4.752 4.802 4.851 4.901 , error amplifier. The P-channel MOSFET, which is connected to the VOUT pin, is then driven by the
Torex Semiconductor
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voltage regulator sot-89-5

transistor c 5586

Abstract: XC6209 %) VOUT MIN 4.505 4.554 4.604 4.653 4.703 4.752 4.802 4.851 4.901 4.950 4.000 4.049 4.099 , P-channel MOSFET, which is connected to the VOUT pin, is then driven by the subsequent output signal. The
Torex Semiconductor
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ETR0306-003

XC6209

Abstract: -0 OUTPUT VOLTAGE (V) (1%) VOUT MIN. 4.505 4.554 4.604 4.653 4.703 4.752 4.802 4.851 4.901 , error amplifier. The P-channel MOSFET, which is connected to the VOUT pin, is then driven by the
Torex Semiconductor
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