NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| PBSS305NX | NXP Semiconductors | TRANSISTOR 4600 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, 3 PIN, BIP General Purpose Small Signal | 
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| PBSS305NX,115 | NXP Semiconductors | TRANSISTOR 4600 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-62, 3 PIN, BIP General Purpose Small Signal |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: versus Voltage 4-600 Motorola TMOS Power MOSFET Transistor Device Data MTD20P06HDL MTD20P06HDL POWER MOSFET , 4-600 Motorola TMOS Power MOSFET Transistor Device Data MTD20P06HDL MTD20P06HDL (-z UJ cc cc o lu o cc di/dt = 300 , versus Starting Junction Temperature 4-600 Motorola TMOS Power MOSFET Transistor Device Data TYPICAL , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's™ Data Sheet HDTMOS E-FET™ High Density Power FET , Preferred Device TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 Mii D 9 GO ò S CASE 369A-13 ... | OCR Scan |
7 pages, |
MTD20P06HDL AN569 369A-13 MOSFET 4600 4600 mosfet POWER MOSFET 4600 4600 fet transistor datasheet abstract |
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| Abstract: EID8596-12 EID8596-12 UPDATED 11/11/2004 8.50 9.60 GHz 12-Watt Internally-Matched Power FET FEATURES , package. This amplifier features Excelics' unique PHEMT transistor technology. Caution! ESD sensitive , 9.0 dB ±0.6 Thermal Resistance dB 35 4000 -33 % 4600 -38* mA dBc VDS = 3 , 12-Watt Internally-Matched Power FET UPDATED 11/11/2004 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS , EID8596-12 EID8596-12 8.50 9.60 GHz 12-Watt Internally-Matched Power FET UPDATED 11/11/2004 Power De-rating ... | Original |
4 pages, |
pHEMT transistor 60GHz transistor 60Ghz EID8596-12 4600 fet transistor EID8596-12 abstract |
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| Abstract: EID8596A1-12 EID8596A1-12 UPDATED 07/12/2007 8.50 9.60 GHz 12-Watt Internally-Matched Power FET , amplifier features Excelics' unique PHEMT transistor technology. Caution! ESD sensitive device. , Compression f = 8.50-9.60GHz 4000 4600 mA IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V , Power FET UPDATED 07/12/2007 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL , EID8596A1-12 EID8596A1-12 8.50 9.60 GHz 12-Watt Internally-Matched Power FET UPDATED 07/12/2007 Power De-rating ... | Original |
4 pages, |
EID8596-12 60Ghz 4600 fet RF TRANSISTOR 10GHZ 60Ghz transistor 4600 fet transistor amplifier TRANSISTOR 12 GHZ EID8596A1-12 EID8596A1-12 abstract |
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| Abstract: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SJ605 2SJ605 is P-channel MOS Field Effect Transistor , 33 A) RDS(on)2 = 31 m MAX. (VGS = 4.0 V, ID = 33 A) · Low Ciss: Ciss = 4600 pF TYP. · Built-in , On-state Resistance Input Capacitance Ciss Output Capacitance 4600 pF Coss 820 pF , The diode connected between the gate and source of the transistor serves as a protector against ESD. ... | Original |
4 pages, |
MP-25Z MP-25 2SJ605-ZJ 2SJ605-Z 2SJ605-S 2SJ605 2SJ605 abstract |
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| Abstract: ) Surface Mount LGA Package APPLICATIONS n n n n The LTM®4600 is a complete 10A, DC/DC step down , 90 70 60 50 40 1.2VOUT 1.5VOUT 2.5VOUT 3.3VOUT 4600 TA01a 30 20 0 2 4 6 LOAD CURRENT (A) 8 10 4600 TA01b 4600fc 1 LTM4600 LTM4600 ABSOLUTE MAXIMUM RATINGS PIN , LOAD CURRENT (A) 4600 G01 Efficiency vs Load Current with Different FCB Settings 8 70 60 50 1.5VOUT 1.8VOUT 2.5VOUT 3.3VOUT 40 10 30 0 2 4 6 LOAD CURRENT (A) 4600 ... | Original |
24 pages, |
PN01 LTM4600IV LTM4600EV LTM4600 6TPE330MIL 4600 mosfet 4600 fet 4600 fet transistor LTM4600 abstract |
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| Abstract: Patents including 5481178, 6100678, 6580258, 5847554, 6304066. The LTM®4600 is a complete 10A, DC/DC , 40 4600 TA01a 30 20 0 2 4 8 6 LOAD CURRENT (A) 10 12 4600 TA01b 4600p , ) EFFICIENCY (%) EFFICIENCY (%) 80 30 12 20 0 2 4 8 6 LOAD CURRENT (A) 4600 G01 , 3.3VOUT 40 30 12 0 2 4 8 6 LOAD CURRENT (A) 12 4600 G03 4600 G02 1.2V Transient , CAP C3 = 100pF 4600 G05 25us/DIV 1.5V AT 5A/us LOAD STEP COUT = 3 · 22uF 6.3V CERAMICS 470uF ... | Original |
24 pages, |
transistor t18 FET 4600 fet cap 150uf 35v LTM4600 LTM4600EV LTM4600IV PN01 transistor M22 marking 320 5400 capacitor LTM4600S 4600 fet transistor LTM4600 abstract |
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| Abstract: LGA Package U APPLICATIO S The LTM®4600 is a complete 10A, DC/DC step down power , 10A 70 60 50 40 1.2VOUT 1.5VOUT 2.5VOUT 3.3VOUT 4600 TA01a 30 20 0 2 4 8 6 LOAD CURRENT (A) 10 12 4600 TA01b 4600fa 1 LTM4600 LTM4600 W U U W W W , 0 2 4 8 6 LOAD CURRENT (A) 4600 G01 Efficiency vs Load Current with Different FCB , CURRENT (A) 12 4600 G03 4600 G02 1.2V Transient Response 10 1.5V Transient Response 90 ... | Original |
24 pages, |
4600 fet transistor 4600 mosfet 6TPE330MIL ceramic capacitor x7r 330uf 6.3v K19 FET LTM4600 LTM4600EV LTM4600IV PN01 T20 96 diode LTM4600 abstract |
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| Abstract: Patents including 5481178, 6100678, 6580258, 5847554, 6304066. The LTM®4600 is a complete 10A, DC/DC , 40 4600 TA01a 30 20 0 2 4 8 6 LOAD CURRENT (A) 10 12 4600 TA01b 4600p , ) EFFICIENCY (%) EFFICIENCY (%) 80 30 12 20 0 2 4 8 6 LOAD CURRENT (A) 4600 G01 , 3.3VOUT 40 30 12 0 2 4 8 6 LOAD CURRENT (A) 12 4600 G03 4600 G02 1.2V Transient , CAP C3 = 100pF 4600 G05 25us/DIV 1.5V AT 5A/us LOAD STEP COUT = 3 · 22uF 6.3V CERAMICS 470uF ... | Original |
24 pages, |
PN01 LTM4600IV LTM4600EV LTM4600 4600 fet transistor transistor marking A21 LTM4600 abstract |
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| Abstract: EID1415-12 EID1415-12 14.40-15.35 GHz 12-Watt Internally-Matched Power FET FEATURES · · · · · · · · 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.0 dBm Output Power at 1dB Compression 5.5 dB Power Gain at 1dB Compression 23% Power Added Efficiency -38 dBc IM3 at Po = 28.5 dBm , features Excelics' unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL , dBm 4.5 5.5 dB ±0.6 dB 23 3680 -33 % 4600 -38* mA dBc VDS = 3 V, VGS = ... | Original |
3 pages, |
EID1415-12 EID1415-12 abstract |
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| Abstract: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ673 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER , -18 A) RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -18 A) · Low C iss: C iss = 4600 pF TYP. · Built-in , S Input Capacitance Ciss VDS = -10 V 4600 pF Output Capacitance Coss VGS = 0 , between the gate and source of the transistor serves as a protector against ESD. When this device ... | Original |
8 pages, |
2SJ673 2SJ673 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| Linear Technology - LTM4600HV - 10A, 28VIN 28VIN 28VIN 28VIN High Efficiency DC/DC u > uModule Buck Regulators > LTM4600HV Internal Power LTM4600HV - 10A, 28VIN 28VIN 28VIN 28VIN High Efficiency DC/DC u Here For LTM4600HV Evaluation Kits For samples contact your local sales office Current Mode Control -55°C to125°C Operating Temperature Range (LTM4600HVMPV) Pb www.datasheetarchive.com/files/linear/product/2846.html |
Linear | 17/09/2010 | 19.33 Kb | HTML | 2846.html |
| Linear Technology - LTM4600 - 10A High Efficiency DC/DC u > uModule Buck Regulators > LTM4600 Internal Power LTM4600 - 10A High Efficiency DC/DC u Click Here For LTM4600 Evaluation Kits For samples contact your local sales office Back to Top Description The LTM4600 is a complete www.datasheetarchive.com/files/linear/product/2844.html |
Linear | 17/09/2010 | 19.08 Kb | HTML | 2844.html |
| internal N-FET pass element LT1086 LT1086 LT1086 LT1086 2 5 no C Fast Transient Response, Requires External Transistor LT1585-1 LT1585-1 LT1585-1 LT1585-1.5 2.5 7 4,600 1.5 8 2.35 7 4,600 Adj, 1.5, 3.3,3.38, 3.45, 3.6 8 1 , Requires External Transistor LT1585A LT1585A LT1585A LT1585A 2 www.datasheetarchive.com/files/linear/c1003/c1040/c1040-allcolumnstypical.html |
Linear | 09/02/2007 | 54.39 Kb | HTML | c1040-allcolumnstypical.html |
| V dropout voltage, internal boost converter (or external 5V supply) provides bias voltage for internal N-FET Response, Requires External Transistor LT1585-1 LT1585-1 LT1585-1 LT1585-1.5 2.5 7 4,600 1.5 8 no DD,T-3 1 4,600 Adj, 1.5, 3.3,3.38, 3.45, 3.6 8 no DD,T-3 1 Fast Transient Response, Requires External Transistor LT1585A LT1585A LT1585A LT1585A www.datasheetarchive.com/files/linear/c1003/c1040/c1040-allcolumnstypical-v1.html |
Linear | 21/11/2005 | 51.63 Kb | HTML | c1040-allcolumnstypical-v1.html |
| STAC4932 STAC4932 STAC4932 STAC4932 model information Power Transistor Division IMS , Industrial and Multisegment Sector Model and Simulation Quakertown , PA Qtn-ms-11016-rev0 May 4 ,2011 Model electrical schematic connected to EDA curve tracer with output data STAC4932 STAC4932 STAC4932 STAC4932_rev1_0 X1 STAC4932 STAC4932 STAC4932 STAC4932 ST S2 S1 G2 D1 D2 G1 DC_FET DC_FET1 VDS_points=41 VDS_stop=16.0 VDS_start=0 VGS_points=101 VGS_stop=20 VGS_start=0 FET Curve Tracer .0 MHz 450.0 MHz 460.0 MHz 470.0 MHz 480.0 MHz 490.0 MHz 500.0 MHz S(1,1) 0.920 / -172.361 0.929 / -173 www.datasheetarchive.com/download/37268067-782645ZC/stac4932x_ads.zip (README_STAC4932_rev1_0_Model_Information.pdf) |
STMicroelectronics | 21/04/2012 | 417.15 Kb | ZIP | stac4932x_ads.zip |
| -Free (e4) RoHS Compliant Package with Gold- Pad Finish Pin Compatible with the LTM4600 Up switching controller, power FETs, inductor, and all support components. Operating over an input voltage resistors, transistors and MOSFET models. Step 1. If you do not already have a copy of LTSpice www.datasheetarchive.com/files/linear/product/3104.html |
Linear | 17/09/2010 | 17.37 Kb | HTML | 3104.html |
| Pin Compatible with the LTM4600 and LTM4602 LTM4602 LTM4602 LTM4602 Up to 92% Efficiency Programmable Soft switching controller, power FETs, inductor, and all support components. Operating over an input voltage , transistors and MOSFET models. Step 1. If you do not already have a copy of LTSpice IV, click here www.datasheetarchive.com/files/linear/product/3105.html |
Linear | 17/09/2010 | 17.49 Kb | HTML | 3105.html |
| PowerSO-10 STripFET ] POWER MOSFET PRELIMINARY DATA n TYPICAL R DS(on) = 0.013 W n STMicroelectronics unique "Single Feature Size ] " strip-based process. The resulting transistor shows extremely = 25 V f = 1 MHz V GS = 0 4600 580 140 pF pF pF STV60NE06-16 STV60NE06-16 STV60NE06-16 STV60NE06-16 2/6 ELECTRICAL www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7146.htm |
STMicroelectronics | 20/10/2000 | 9.67 Kb | HTM | 7146.htm |
| - 0.013 W - 60A PowerSO-10 STripFET ] POWER MOSFET PRELIMINARY DATA n TYPICAL R DS resulting transistor shows extremely high packing density for low on-resistance, rugged avalance Transfer Capacitance V DS = 25 V f = 1 MHz V GS = 0 4600 580 140 pF pF p www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7146-v1.htm |
STMicroelectronics | 25/05/2000 | 9.07 Kb | HTM | 7146-v1.htm |
| SD4931 SD4931 SD4931 SD4931 model information Power Transistor Division IMS , Industrial and Multisegment Sector Model and Simulation Quakertown , PA Qtn-ms-11012-rev0 March 30 ,2011 Model electrical schematic 30 400 50 5 10 15 0 20 Vds,V I d s , A Vds(on) SD4931 SD4931 SD4931 SD4931_rev1_0 X1 DC_FET DC_FET1 VDS_points=41 VDS_stop=50.0 VDS_start=0 VGS_points=101 VGS_stop=20 VGS_start=0 FET Curve Tracer Gate Drain S-parameters SD .0 MHz 390.0 MHz 400.0 MHz 410.0 MHz 420.0 MHz 430.0 MHz 440.0 MHz 450.0 MHz 460.0 MHz 470.0 MHz 480 www.datasheetarchive.com/download/28084266-782635ZC/sd4931_ads.zip (README_SD4931_rev1_0_Model_Information.pdf) |
STMicroelectronics | 21/04/2012 | 403.49 Kb | ZIP | sd4931_ads.zip |