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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: .000435 .0000124 MTBF (Hours) .457E+06 .119E+08 .489E+08 .230E+09 .808E+10 20,000 FIT RATE ... | Original |
64 pages, |
square d 9007 49r024b6 CS42 MD65C51B mt8812ae 29764 MT8880 MT8972AC MT8962AY mt8870 example code MT8980DC MT8870C-1 MT8870C MT88L70 datasheet abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| .272 .MODEL DBS D + IS = 0.1E-12 1E-12 1E-12 1E-12 + BV = 825 + N = 1 + TT = 0.457E-06 + RS = 0.674E-02 674E-02 674E-02 674E-02 www.datasheetarchive.com/download/70127284-782971ZC/stp8nk80z_spice.zip (stp8nk80z_spice.lib) |
STMicroelectronics | 21/04/2012 | 1.04 Kb | ZIP | stp8nk80z_spice.zip |
| PMOS ( LEVEL = 3 TOX = 3e-8 + RS = 0 KP = 4.457e-06 NSUB = 1.01e+16 + KAPPA = 1e-3 ETA = 1e-4 NFS www.datasheetarchive.com/files/vishay/docs/64941/si6562cd.txt |
Vishay | 13/05/2009 | 2.28 Kb | TXT | si6562cd.txt |
| PMOS ( LEVEL = 3 TOX = 5e-8 + RS = 5.000e-04 KP = 2.457e-06 NSUB = 3.31e+16 + KAPPA = 1.000e-06 ETA www.datasheetarchive.com/files/vishay/docs/64771/si4599dy.txt |
Vishay | 18/02/2009 | 2.7 Kb | TXT | si4599dy.txt |
| * .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 + RS = 0 KP = 4.457e-06 NSUB = 1.01e+16 + KAPPA = 1e-3 ETA = 1 www.datasheetarchive.com/files/vishay/docs/64942/si6562cd.txt |
Vishay | 13/05/2009 | 2.36 Kb | TXT | si6562cd.txt |
| * .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 + RS = 0 KP = 4.457e-06 NSUB = 1.01e+16 + KAPPA = 1e-3 ETA = 1 www.datasheetarchive.com/files/vishay/docs/64943/si6562cd.lib |
Vishay | 13/05/2009 | 2.36 Kb | LIB | si6562cd.lib |
| PMOS ( LEVEL = 3 TOX = 5e-8 + RS = 5.000e-04 KP = 2.457e-06 NSUB = 3.31e+16 + KAPPA = 1.000e-06 ETA www.datasheetarchive.com/files/vishay/docs/64772/si4599dy.txt |
Vishay | 18/02/2009 | 2.71 Kb | TXT | si4599dy.txt |
| PMOS ( LEVEL = 3 TOX = 5e-8 + RS = 5.000e-04 KP = 2.457e-06 NSUB = 3.31e+16 + KAPPA = 1.000e-06 ETA www.datasheetarchive.com/files/vishay/docs/64773/si4599dy.lib |
Vishay | 18/02/2009 | 2.71 Kb | LIB | si4599dy.lib |
| ELDRS Report 09-287 100711 R1.0 An ISO 9001:2008 and DSCC Certified Company 1 Radiation Assured Devices 5017 N. 30th Street Colorado Springs, CO 80919 (719) 531-0800 Enhanced Low Dose Rate Sensitivity (ELDRS) Radiation Testing of the RH1016MW RH1016MW RH1016MW RH1016MW UltraFast Precision Comparator for Linear Technology Customer: Linear Technology (PO 53101L 53101L 53101L 53101L) RAD Job Number: 09-287 Part Type Tested: Linear Technology RH1016MW-ES RH1016MW-ES RH1016MW-ES RH1016MW-ES UltraFast Precision Comparator Commercial Part Number: RH1016MW RH1016MW RH1016MW RH1016MW Trac www.datasheetarchive.com/download/92495459-347089ZC/rlat report_rh1016mw.zip (ELDRS Report_RH1016MW_Fabrication Lot# WD003520.1.pdf) |
Linear | 18/08/2010 | 706.29 Kb | ZIP | rlat report_rh1016mw.zip |
| |* | Texas Instruments Incorporated | Data Transmissions Products | IBIS Model for SN65HVD1785 SN65HVD1785 SN65HVD1785 SN65HVD1785 | SOIC 8-pin (D), PDIP 8-pin (P), VCC=5V |* | [IBIS Ver] 3.2 [Comment char] |_char [File name] sllc355.ibs [File Rev] 1.0 [Date] 12Aug08 [S www.datasheetarchive.com/download/4860282-918899ZC/sllc355.zip (sllc355.ibs) |
Texas Instruments | 07/08/2011 | 9.13 Kb | ZIP | sllc355.zip |
| |* [IBIS Ver] 3.2 [File name] 24c16ts_50v_rev_k.ibs |24c16=abbr chip name,ts=TSSOP,50v=5.0V Vcc [File Rev] 1.0 [Date] 16-March-2011 [Source] File generated from simulation at Semiconductor Components Industries, LLC (SCI, LLC) dba ON Semiconductor or its subsidiaries www.datasheetarchive.com/files/on_semiconductor/simulation-models/24c16ts_50v_rev_k.ibs |
On Semiconductor | 28/03/2012 | 42.48 Kb | IBS | 24c16ts_50v_rev_k.ibs |