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450MH

Catalog Datasheet MFG & Type PDF Document Tags

DSASW00406526

Abstract: MECHANICAL DIMENSIONS:(mm) A 38.5MAX. ELECTRICAL CHARACTERISTICS: at 25° C PRI. SEC. 4 5 1).INDUCTANCE: @1KHz,1.0V L(6-1): 300uH Min. L(4,5-7,8): 2H Min. L(13,14-2,3): 2H Min. 2).Leakage Inducatance: @50KHz,1.0V, Short PRI. LK(4,5-7,8): 450mH ± 8% LK(13,14-2,3): 450mH ± 8% 3).DC Resistance: DCR(6-1): 250m REF. DCR(4,5-7,8): 2.2K REF. DCR(13,14-2,3): 2.2K REF. 4).HI-POT: PRI TO SEC: 0.5KVac, 3mA MAX @50/60Hz 3sec PRI TO CORE: 0.5KVac, 3mA MAX @50/60Hz 3sec SEC TO CORE: 3.6KVac,3mA MAX
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DSASW00406526 50/60H 10F-1 EFD24 TR05091502 TMS91252CS

R15F

Abstract: R10F SMT DC-DC Converter Transformers DC-DC TYPE R10F Frequency Range: 1~500kHz Inductance Range: 0.01~350mH Maximum conversion power: 1.5W (Flyback system) 2 Applicable EL size: 3~12cm Recommended patterns (Unit: mm) (Unit: mm) TYPE R12F Frequency Range: 8~200kHz Inductance Range: 1~450mH Maximum conversion power: 2.0W (Flyback system) Recommended patterns (Unit: mm) (Unit: mm) TYPE R15F Frequency Range: 8~200kHz Inductance Range: 1~600mH Maximum conversion power: 4.0W (Flyback
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R15F R10F R10F13 R12F14 R15F16

Polyfet RF Devices

Abstract: TETRA radio ; PHM017-3 Pout/G a in vs P in; F=450MH z Vds=28V dc, V a g c =5Vdc, Idq=.8A 31 18 V ds=28Vd, Vagc , -3 Pout/ Gain vs Vagc; Freq = 10 450MHz Vds=28V dc Idq=.8A 9 8 35 30 Gain 7 25 6
Polyfet RF Devices
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Polyfet RF Devices TETRA radio

R15F

Abstract: R10F SMT DC-DC Converter Transformers TYPE R10F / R10F Frequency Range / : 1~500kHz Inductance Range / :0.01~350mH Maximum conversion power / : 1.5W (Flyback system / ) 2 Applicable EL size/EL: 3~12cm TYPE R10F R12F R15F Recommended patterns (Unit: mm) (Unit: mm) TYPE R12F / R12F Frequency Range / : 8~200kHz Inductance Range / :1~450mH Maximum conversion power / : 2.0W (Flyback system / ) Recommended patterns (Unit: mm) (Unit: mm) TYPE R15F / R15F Frequency
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R15-F 40w flyback

R15F

Abstract: R10F SMT DC-DC Converter Transformers TYPE R10F / R10F Frequency Range / : 1~500kHz Inductance Range / :0.01~350mH Maximum conversion power / : 1.5W (Flyback system / ) 2 Applicable EL size/EL: 3~12cm TYPE R10F R12F R15F Recommended patterns (Unit: mm) (Unit: mm) TYPE R12F / R12F Frequency Range / : 8~200kHz Inductance Range / :1~450mH Maximum conversion power / : 2.0W (Flyback system / ) Recommended patterns (Unit: mm) (Unit: mm) TYPE R15F / R12F Frequency
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R10F13

Abstract: R10F SMT DC-DC Converter Transformers DC-DC TYPE R10F Frequency Range: 1~500kHz Inductance Range: 0.01~350mH Maximum conversion power: 1.5W (Flyback system) Applicable EL size: 3~12cm2 TYPE R10F R12F R15F Recommended patterns (Unit: mm) (Unit: mm) TYPE R12F Frequency Range: 8~200kHz Inductance Range: 1~450mH Maximum conversion power: 2.0W (Flyback system) Recommended patterns (Unit: mm) (Unit: mm) TYPE R15F Frequency Range: 8~200kHz Inductance Range
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fly back

INVERTER TRANSFORMERS

Abstract: el inverter circuit DC-DCEL TYPE R12F R15F TYPE R12F Frequency Range: 8~200kHz Inductance Range: 1~450mH Maximum
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INVERTER TRANSFORMERS el inverter circuit EL driving fly-back transformer fly back transformer T665M T665MNN-1007

RF6504

Abstract: tx rx 433Mhz rf module , VREG = 3.4V, Freq = 433MHz, 450MHz, and 470MHz, Temp = 25°C 433MH 15 450MH 470MH 15 10 5 , /450MHz to 470MHz ISM Band Application Single Chip RF Front End Module GND 6 17 GND NC 7 , (dBm) VCC = 3.6V, VREG = 3.4V, Freq = 450MHz, Temp = 30°C, 25°C, and 70°C 32 27 22 17 30°C 12 7 2 3 0 5 10 15 POUT (dBm) 20 25 30 25°C 70°C 7 2 3 0 5 10 15 POUT (dBm) 20 25 30 32 27 22 17 433MH 12 450MH 470MH PA Gain (dB) versus POUT (dBm) VCC = 3.6V, VREG = 3.4V, Freq = 433MHz, 450MHz, and 470MHz, Temp =
RF Micro Devices
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RF6504 tx rx 433Mhz rf module 433mhz rx tx module 433 mhz SW Rx 433mhz rf module RF65043 RF6504SB RF6504SR RF6504TR7

R15F

Abstract: R10F SMT DC-DC Converter Transformers DC-DC TYPE R10F Frequency Range: 1~500kHz Inductance Range: 0.01~350mH Maximum conversion power: 1.5W (Flyback system) 2 Applicable EL size: 3~12cm Recommended patterns (Unit: mm) (Unit: mm) TYPE R12F Frequency Range: 8~200kHz Inductance Range: 1~450mH Maximum conversion power: 2.0W (Flyback system) Recommended patterns (Unit: mm) (Unit: mm) TYPE R15F Frequency Range: 8~200kHz Inductance Range: 1~600mH Maximum conversion power
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flyback transformer specification

Abstract: SMT DC-DC Converter Transformers DCDC TYPE R12F TYPE R12F Frequency Range: 8~200kHz Inductance Range: 1~450mH Maximum conversion power: 2.5W (Flyback system) Recommended Patterns 8.0 4.0 1.8 0.6 PITCH=2 (Unit: mm) 14.9 11.3 10-1.6 1.8 (Unit: mm) 14.5Max. 6.0Max. 12.2 R12F Features · · · · · · · 14.5 × 13mm Max. square and 6.0mm Max. height. Suitable for reflow soldering Available on tape and reel for automatic insertion 10 ferminals for 5 outputs maximum DC-DC converter
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flyback transformer specification

s20k 550

Abstract: G912 width limited by max. junction temperature (See Figure 11) © V dd = 50V, starting T j= 2 5'C , L=4.50mH
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s20k 550 G912 IRC644

IRC644

Abstract: limited by max. junction temperature (See Figure 11) © Vdd=50V, starling Tj=25°C, L=4.50mH Ra=25Q, Ias
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Abstract: j -
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0Q145 0D145

transistor 20107

Abstract: transistor dk 50 30 30 300 680mi2 450mH 450m£2 180m£l 15 Q 30m fi 90m£l 8Q 17 n 50+125 m ii 100+250 miJ 8+17 W
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transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note DK 51* transistor BFG591 Application Notes SA5200 SA611 SA2420 SA621 SA1620 SA1921

MC9S12VR48

Abstract: 9S12VR64 (S12CPMU_UHV) Revision History · Added Table B-2 · Changed Num 2 in Table H-2 inductive load max 450mH
Freescale Semiconductor
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MC9S12VRRMV2 MC9S12VR48 9S12VR64 a121 do ec nv TIM16B8CV3 smp1 phase protection relay S12GMMCV1 MC9S12VR-F CPU12-1 CPU12 CPU12X 2N05E

ECF45

Abstract: F44S211B Surface Mount Crystal Filters ECF45 Series § § § § § Ultra Thin 1.5mm max Surface Mount Suitable for Reflow Soldering Ceramic to Metal Seal Suitable for Pick & Place Type F45S015A F45S030A F44S211B Centre Frequency 45.0MHz 45.0MHz 44.25MHz Environmental & Mechanical Shock Random Drop 120 cm 3cycle Vibration Solderability Leakage 10-55Hz 1.5mm amplitude in each plane 5 Seconds @ 0 0 230 C +/-5 C Air Leak and Helium Leak 0 0 Damp Heat 2Hrs +40 C +/-2 C
ECM Electronics
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RH20 10-55H 1000H

HY5RS573225F

Abstract: HY5RS573225F-12 -20 500MHz 1000Mbps/pin HY5RS573225F-22 450MHz 900Mbps/pin Part No. HY5RS573225F , example, a tRCD specification of 16ns with a 450MHz clock (2.2ns period) results in 7.2 clocks rounded to
Hynix Semiconductor
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HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 HY5RS573225F-18 HY5RS573225

IDT5T93GL02

Abstract: to a secondary clock source up to 450MHz. Selectable inputs are controlled by SEL. During the , (max) Up to 450MHz operation Selectable inputs Hot insertable and over-voltage tolerant inputs 3.3V , Conditions VDD = Max., All Input Clocks = LOW(2) Outputs enabled VDD = 2.7V., FREFERENCE CLOCK = 450MHz
Integrated Device Technology
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IDT5T93GL02 5T93GL02

transistor 4F LNA

Abstract: flo14 quadrature: 45mVrms at 450MHz, CW. Mixer inputs (3, 5) driven differentially: 0·45mVrms at 450·004MHz, CW , 450MHz, CW. Mixer inputs (3, 5) driven differentially: 0·45mVrms at 450·004MHz, CW. As gain to TPI , 210 210 110 110 SL6619 RECEIVER CHARACTERISTICS (450MHz) Receiver Characteristics (450MHz , 210°C to 155°C, VCC1 = 1·04V to 2·0V, VCC2 = 2·3V to 3·2V, VCC1,VCC220·8V, carrier frequency = 450MHz , FMMT589 (Zetex ZTX550) Table 4 Component list for 450MHz characterisation board 12 SL6619
Mitel Semiconductor
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DS3853 transistor 4F LNA flo14 flo16 Varactor Diode RF AN137

DS4410

Abstract: flo16 LO inputs (12, 14) driven in quadrature: 45mVrms at 450MHz, CW. Mixer inputs (3, 5) driven , quadrature: 45mVrms at 450MHz, CW. Mixer inputs (3, 5) driven differentially: 0·45mVrms at 450·004MHz, CW , 0·74 210 210 110 110 SL6679 RECEIVER CHARACTERISTICS (450MHz) Receiver Characteristics (450MHz) are guaranteed over the following range of operating conditions unless otherwise stated , 210°C to 155°C, VCC1 = 1·04V to 2·0V, VCC2 = 2·3V to 3·2V, VCC1,VCC220·8V, carrier frequency = 450MHz
Mitel Semiconductor
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DS4410
Abstract: MECHANICAL DIMENSIONS:(mm) A 38.5MAX. ELECTRICAL CHARACTERISTICS: at 25° C PRI. SEC. 4 5 1).INDUCTANCE: @1KHz,1.0V L(6-1): 300uH Min. L(4,5-7,8): 2H Min. L(13,14-2,3): 2H Min. 2).Leakage Inducatance: @50KHz,1.0V, Short PRI. LK(4,5-7,8): 450mH ± 8% LK(13,14-2,3): 450mH ± 8% 3).DC Resistance: DCR(6-1): 250m REF. DCR(4,5-7,8): 2.2K REF. DCR(13,14-2,3): 2.2K REF. 4).HI-POT: PRI TO SEC: 0.5KVac, 3mA MAX @50/60Hz 3sec PRI TO CORE: 0.5KVac, 3mA MAX @50/60Hz 3sec SEC TO CORE: 3.6KVac,3mA MAX -
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U308-U310 U308-10 XU308-10 100MH
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