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RXQ4-433 Texas Instruments Sub 1GHz Multichannel Radio Transceiver without microcontroller visit Texas Instruments
ISL6146AFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFUZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146DFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146CFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy

4433 fet

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4433 fet

Abstract: DE-A10 MITSUBISHI SEMICONDUCTOR MGFC42V3436 3.4 DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The , GaAs FET FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = , MITSUBISHI SEMICONDUCTOR MGFC42V3436 3.4 TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB,GLP vs. f Po,PA E vs. Pin - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET F R E Q U E N C Y f(G H z
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4433 fet DE-A10

4433 fet

Abstract: F4535 MITSUBISHI SEMICONDUCTOR MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V3436 is an internally impedance-matched Unit: millimeters GaAs power FET especially designed for use in 3.4 - 3.6 24+/-0.3 GHz band amplifiers. The , FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta , 4.433 14 0.06 -52 0.25 -163 MITSUBISHI ELECTRIC Angle(deg) Sep. 1998
Mitsubishi
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F4535 high power FET transistor s-parameters VDS-10 GF-18
Abstract: M ITSUBISHI SEM ICONDUCTO R MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package , FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET T Y P IC A L C H A R A C , 0.42 126 4.546 21 0.06 -43 0.24 -157 3.70 0.43 118 4.433 14 0.06 -
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PUNSE

Abstract: 1GG7 , IRFout2 = 2 mA, VSEL1 = ­10 V, VRFout1 = open circuit, VRFin = GND) Breakdown voltage (Test FET w/ VD = VS , information on these subjects. Additional references AN #57, "FET Switch Speed and Settling Time , Fax United States: (tel) 800 829 4444 (fax) 800 829 4433 Canada: (tel) 877 894 4414 (fax) 800 746 4866
Agilent Technologies
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1GG7-8005 PUNSE 1GG7 HMMC-2027 5989-6204EN
Abstract: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:17th , ,520MHz,7.2V,2W OUTLINE DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for , mishap. MITSUBISHI MITSUBISHI RF POWER MOS FET ATTENTION Revision date: 17 /Dec.â'™02 , 11 12 Vdd (V) MITSUBISHI 15 20 25 MITSUBISHI RF POWER MOS FET ATTENTION , 11 12 Vdd (V) MITSUBISHI MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR -
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175MH 520MH

NE42484A-T1

Abstract: NE42484AS SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Id s = 10 mA 24 HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz L g = 0.35 Jim, W g = 200 |im 21 LOW COST METAL CERAMIC PACKAGE , DESCRIPTION The NE42484A is a pseudom orphic Hetero-Junction FET that uses the junction between Si-doped , 0.381 0.380 0.390 0.399 S21 ANG MAG 4.433 4.417 4 401 4.345 4.245 4.071 3.859 3.683 3.447 3.243
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NE42484AS NE42484A-T1 E42484A

PU1501

Abstract: transistor d 4515 EQUIVALENT 4136 PÜ4137 A PU4431 A PU 4432 A PU 4433 A PU 4434 PU 4435 PÜ 4436 PU 4437 A PU 3133 A PU3134 A , F K b u ilt-in Z e n e r P U 3127 nsfr-fcfneiT FET b u ilt-in Z e n e r N C hannel P Ü 6 1 C 56 FET N ote) P U 8 4 5 6 is with long lead. A Tentative 130 Panasonic
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PU1501 transistor d 4515 EQUIVALENT equivalent transistor n 4212 d 1275 transistor k 4212 fet 4435 equivalent PU3110 PU3111 PU3112 PU3211 PU3214 PU3116

4433 fet

Abstract: 1GG7 , VRFout1 = open circuit, VRFin = GND) Breakdown voltage (Test FET w/ VD = VS = GND, IG = ­50 µA) ­6.75 , basic information on these subjects. Additional references AN #57, "FET Switch Speed and Settling Time , : www.agilent.com/find/contactus Phone or Fax United States: (tel) 800 829 4444 (fax) 800 829 4433 Canada: (tel) 877
Agilent Technologies
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GaAs MMIC ESD, Die Attach and Bonding Guidelines HMMC-2007 1GG7-8004 5989-6203EN

IC PIC16F877A working

Abstract: Projects and Circuits for Data Logger gymnastics with the EPROM programmer and UV light source. The '4433 has 32 general-purpose registers, a , maximum 8-MHz clock frequency. The '4433 also features a linear address space with no address paging , after powerup, the AVR sets the output connected to the gate of Q3, an N-channel FET, high. This pulls down the gate of Q1, a P-channel FET, activating it and bypassing S1 so that the circuit remains
Atmel
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TUSB3220 IC PIC16F877A working Projects and Circuits for Data Logger connect water level sensor to msp430 PIC18F452 Free Projects pic16f877a projects water pressure project avr AT90S4433 T89C51RB2/RC2/RD2 T89C5111/5112/5115 T89C51AC2 T89C51CC01/02/03 C51U2

AN 7591 POWER AMPLIFIER

Abstract: ATF-53189 Avago Technologies's ATF53189 is a single-voltage high linearity, low noise EpHEMT FET packaged in a , 81.7 14.9 5.582 79.2 13.9 4.939 76.5 12.9 4.433 73.8 12.1 4.026 70.9 9.32.910 59.6 6.52.123 45.9 , 81.7 14.9 5.582 79.2 13.9 4.939 76.5 12.9 4.433 73.8 12.1 4.026 70.9 9.32.910 59.6 6.52.123 45.9 , 81.7 14.9 5.582 79.2 13.9 4.939 76.5 12.9 4.433 73.8 12.1 4.026 70.9 9.32.910 59.6 6.52.123 45.9 , 14.9 5.582 79.2 13.9 4.939 76.5 12.9 4.433 73.8 12.1 4.026 70.9 9.32.910 59.6 6.52.123 45.9 4.31.647
Avago Technologies
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ATF-53189 AN 7591 POWER AMPLIFIER HEMT marking P 5989-3893EN AV02-0051EN
Abstract: Avago Technologies's ATF-53189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a , 4.939 4.433 4.026 2.910 2.123 1.647 1.304 1.062 0.921 0.669 0.515 0.389 0.308 0.239 0.187 0.158 0.131 , -21.1 -18.9 -17.1 S21 Mag. 35.531 19.023 12.872 9.705 7.687 6.438 5.582 4.939 4.433 4.026 2.910 , S21 Mag. 35.531 19.023 12.872 9.705 7.687 6.438 5.582 4.939 4.433 4.026 2.910 2.123 1.647 1.304 1.062 , 5.582 4.939 4.433 4.026 2.910 2.123 1.647 1.304 1.062 0.921 0.669 0.515 0.389 0.308 0.239 0.187 0.158 Avago Technologies
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low noise amplifier 0947

Abstract: 2DB30 Features Avago Technologies's ATF53189 is a single-voltage high linearity, low noise EpHEMT FET , 6.438 5.582 4.939 4.433 4.026 2.910 2.123 1.647 1.304 1.062 0.921 0.669 0.515 0.389 0.308 , 6.438 5.582 4.939 4.433 4.026 2.910 2.123 1.647 1.304 1.062 0.921 0.669 0.515 0.389 0.308 , 6.438 5.582 4.939 4.433 4.026 2.910 2.123 1.647 1.304 1.062 0.921 0.669 0.515 0.389 0.308 , 12.872 9.705 7.687 6.438 5.582 4.939 4.433 4.026 2.910 2.123 1.647 1.304 1.062 0.921 0.669
Avago Technologies
Original
low noise amplifier 0947 2DB30 ATF-53189-BLK 5M-1982

ATF-53189

Abstract: ATF-53189-BLK Features Avago Technologies's ATF-53189 is a single-voltage high linearity, low noise E-pHEMT FET , 12.872 9.705 7.687 6.438 5.582 4.939 4.433 4.026 2.910 2.123 1.647 1.304 1.062 0.921 0.669 , -21.1 -18.9 -17.1 35.531 19.023 12.872 9.705 7.687 6.438 5.582 4.939 4.433 4.026 2.910 , 12.872 9.705 7.687 6.438 5.582 4.939 4.433 4.026 2.910 2.123 1.647 1.304 1.062 0.921 0.669 , -21.1 -18.9 -17.1 35.531 19.023 12.872 9.705 7.687 6.438 5.582 4.939 4.433 4.026 2.910
Avago Technologies
Original
53189

NE42484A

Abstract: SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES V E R Y L O W N O IS E F IG U R E : 0.8 dB typical at 12 G H z H IG H A S S O C IA T E D G A IN : 10.5 dB Typical at 12 G H z NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V , I d s = 10 mA Lg = 0.35 fim, Wg = 200 nm L O W C O S T M E T A L C E R A M IC P A C K A G E T A P E & R E E L P A C K A G IN G O P T IO N A V A IL A , 117.400 97.200 79.000 60.600 MAG 4.433 4.417 4.401 4.345 4.245 4.071 3.859 3.663 3.447 3.243 3.072 2.918
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S21S12 IS12S21I

ALC 887

Abstract: 1GG7 process which features an MBE epitaxial layer, backside ground vias, and FET gate lengths of approximately , /contactus Phone or Fax United States: (tel) 800 829 4444 (fax) 800 829 4433 Canada: (tel) 877 894 4414 (fax
Agilent Technologies
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ALC 887 HMMC-1002 1GG7-8001 5989-6201EN
Abstract: ) Single Stage Shown Aux. Gate Notes: FET gate periphery in microns. All resistors in ohms (â"¦). , . www.agilent.com/find/contactus Agilent Open United States: (tel) 800 829 4444 (fax) 800 829 4433 Agilent Technologies
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HMMC-5027 1GG7-8002 5989-6208EN

45580

Abstract: 1gg6-8002 FET stage is in the OFF state when biased with a gate voltage level that is sufficient to pinch off , Fax United States: (tel) 800 829 4444 (fax) 800 829 4433 Canada: (tel) 877 894 4414 (fax) 800 746 4866
Agilent Technologies
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45580 1gg6-8002 TCA 430 TCA 975 1gg6 tca 761 HMMC-5618 1GG6-8002 5989-6212EN

83040

Abstract: 1GG7 Input 30 K 15 K 17 K 50 50 5.5 First Gate Bias (VG1) Aux. Gate Notes: FET gate periphery in microns. All , Fax United States: (tel) 800 829 4444 (fax) 800 829 4433 Canada: (tel) 877 894 4414 (fax) 800 746 4866
Agilent Technologies
Original
83040
Abstract: maintaining a good input/ output port match. Notes: FET gate periphery in microns. 3 Additional , Agilent Open United States: (tel) 800 829 4444 (fax) 800 829 4433 www.agilent.com/find/open Agilent Technologies
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HMMC-5021 HMMC-5022 HMMC-5026 1GG7-8000 1GG7-8006 1GG7-8007

Traveling Wave Amplifier

Abstract: TCA 810 First Gate Bias (VG1) Aux Gate Figure 1. Schematic Notes: FET gate periphery in microns. 3 , 4433 Canada: (tel) 877 894 4414 (fax) 800 746 4866 China: (tel) 800 810 0189 (fax) 800 820 2816 Europe
Agilent Technologies
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Traveling Wave Amplifier TCA 810 agilent HMMC hmmc5022 HMMC-5021/22/26 HMMC5021/22/26 5989-6205EN
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