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44332 Murr MIRO converter unit for PT100 Dimensions W x H x D: 12.4 x 90 x 65 mm Temperature measurement range: 0...+100 °C Accuracy: 1% of upper range value Input, resistance thermometer: Pt100 Output, analogue: 0/4...20 mA / 0...10 V Operating voltage: 18...30 VDC 6 from €141.60 (Aug 2016) Distrelec Buy

4433 fet

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MITSUBISHI SEMICONDUCTOR MGFC42V3436 MGFC42V3436 3.4 DESCRIPTION The MGFC42V3436 MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The , GaAs FET FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = , MITSUBISHI SEMICONDUCTOR MGFC42V3436 MGFC42V3436 3.4 TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB,GLP vs. f Po,PA E vs. Pin - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET F R E Q U E N C Y f(G H z ... OCR Scan
datasheet

2 pages,
47.01 Kb

4433 fet MGFC42V3436 TEXT
datasheet frame
Abstract: MITSUBISHI SEMICONDUCTOR MGFC42V3436 MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V3436 MGFC42V3436 is an internally impedance-matched Unit: millimeters GaAs power FET especially designed for use in 3.4 - 3.6 24+/-0.3 GHz band amplifiers. The , FET> MGFC42V3436 MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta , 4.433 14 0.06 -52 0.25 -163 MITSUBISHI ELECTRIC Angle(deg) Sep. 1998 ... Mitsubishi
Original
datasheet

2 pages,
140.95 Kb

VDS-10 MGFC42V3436 high power FET transistor s-parameters 4433 fet TEXT
datasheet frame
Abstract: M ITSUBISHI SEM ICONDUCTO R MGFC42V3436 MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3436 MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package , FET> MGFC42V3436 MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET T Y P IC A L C H A R A C , 0.42 126 4.546 21 0.06 -43 0.24 -157 3.70 0.43 118 4.433 14 0.06 ... OCR Scan
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2 pages,
34.15 Kb

MGFC42V3436 TEXT
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Abstract: , IRFout2 = 2 mA, VSEL1 = ­10 V, VRFout1 = open circuit, VRFin = GND) Breakdown voltage (Test FET w/ VD = VS , information on these subjects. Additional references AN #57, "FET Switch Speed and Settling Time , Fax United States: (tel) 800 829 4444 (fax) 800 829 4433 Canada: (tel) 877 894 4414 (fax) 800 746 4866 ... Agilent Technologies
Original
datasheet

7 pages,
397.39 Kb

1GG7-8005 1GG7 PUNSE HMMC-2027 TEXT
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Abstract: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:17th , ,520MHz,7.2V,2W OUTLINE DESCRIPTION RD02MUS1 RD02MUS1 is a MOS FET type transistor specifically designed for , mishap. MITSUBISHI MITSUBISHI RF POWER MOS FET ATTENTION Revision date: 17 /Dec.’02 , 11 12 Vdd (V) MITSUBISHI 15 20 25 MITSUBISHI RF POWER MOS FET ATTENTION , 11 12 Vdd (V) MITSUBISHI MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR ... OCR Scan
datasheet

8 pages,
296.16 Kb

TEXT
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Abstract: SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz NE42484A NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Id s = 10 mA 24 HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz L g = 0.35 Jim, W g = 200 |im 21 LOW COST METAL CERAMIC PACKAGE , DESCRIPTION The NE42484A NE42484A is a pseudom orphic Hetero-Junction FET that uses the junction between Si-doped , 0.381 0.380 0.390 0.399 S21 ANG MAG 4.433 4.417 4 401 4.345 4.245 4.071 3.859 3.683 3.447 3.243 ... OCR Scan
datasheet

4 pages,
166.28 Kb

NE42484AS NE42484A-T1 NE42484A TEXT
datasheet frame
Abstract: U3146 d1266 SD1267 D1275 4136 PÜ4137 A PU4431 PU4431 A PU 4432 A PU 4433 A PU 4434 PU 4435 PÜ 4436 PU 4437 A PU 3133 A PU3134 PU3134 A , F K b u ilt-in Z e n e r P U 3127 nsfr-fcfneiT FET b u ilt-in Z e n e r N C hannel P Ü 6 1 C 56 FET N ote) P U 8 4 5 6 is with long lead. A Tentative 130 Panasonic ... OCR Scan
datasheet

2 pages,
138.76 Kb

equivalent transistor n 4216 PU160 PU3131 SIL 3124 transistor A 1264 transistor c 3228 TRANSISTOR D 1266 transistor d 4515 4435 fet 4435 transistor 4435 equivalent transistor k 4212 fet d 1275 PU3110 PU3111 equivalent transistor n 4212 PU3110 PU3111 transistor d 4515 EQUIVALENT PU3110 PU3111 PU1501 PU3110 PU3111 PU3110 PU3110 PU3111 PU3111 PU3112 PU3211 PU3214 PU3116 PU4116 PU4110 PU4111 U4112 U4113 PU4114 PU4211 PU4213 U4410 PU4411 PU4511 PU4513 PU4514 PU431 PU4311 TEXT
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Abstract: , VRFout1 = open circuit, VRFin = GND) Breakdown voltage (Test FET w/ VD = VS = GND, IG = ­50 uA) ­6.75 , basic information on these subjects. Additional references AN #57, "FET Switch Speed and Settling Time , : www.agilent.com/find/contactus Phone or Fax United States: (tel) 800 829 4444 (fax) 800 829 4433 Canada: (tel) 877 ... Agilent Technologies
Original
datasheet

8 pages,
351.89 Kb

PUNSE 1GG7 4433 fet HMMC-2007 1GG7-8004 TEXT
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Abstract: gymnastics with the EPROM programmer and UV light source. The '4433 has 32 general-purpose registers, a , maximum 8-MHz clock frequency. The '4433 also features a linear address space with no address paging , after powerup, the AVR sets the output connected to the gate of Q3, an N-channel FET, high. This pulls down the gate of Q1, a P-channel FET, activating it and bypassing S1 so that the circuit remains ... Atmel
Original
datasheet

4 pages,
343.57 Kb

interfacing DS1307 ARCHITECTURE OF PIC16F877A regulator 4433 DS1307 microchip 4433 fet TUSB3220 PIC16F877A Free Projects of LED PIC18F458 Free Projects ds1307 avr ATMEL 80C31 RD2 pressure sensor interface with AT89C51 pic16f877a projects water pressure project avr PIC18F452 Free Projects connect water level sensor to msp430 Projects and Circuits for Data Logger IC PIC16F877A working TEXT
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Abstract: Avago Technologies's ATF53189 ATF53189 is a single-voltage high linearity, low noise EpHEMT FET packaged in a , 81.7 14.9 5.582 79.2 13.9 4.939 76.5 12.9 4.433 73.8 12.1 4.026 70.9 9.32.910 59.6 6.52.123 45.9 , 81.7 14.9 5.582 79.2 13.9 4.939 76.5 12.9 4.433 73.8 12.1 4.026 70.9 9.32.910 59.6 6.52.123 45.9 , 81.7 14.9 5.582 79.2 13.9 4.939 76.5 12.9 4.433 73.8 12.1 4.026 70.9 9.32.910 59.6 6.52.123 45.9 , 14.9 5.582 79.2 13.9 4.939 76.5 12.9 4.433 73.8 12.1 4.026 70.9 9.32.910 59.6 6.52.123 45.9 4.31.647 ... Avago Technologies
Original
datasheet

16 pages,
269.36 Kb

HEMT marking P ATF-53189 AN 7591 POWER AMPLIFIER TEXT
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! SIEMENS Discrete & RF Semiconductors ! CLY29 CLY29 ! GaAs Power FET in MWP-25 MWP-25 ! VDS = 9 V ID = 180 mA ! Common Source S-Parameters: August 1998 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.500 0.8740 -76.0 8.885 129.0 0.0245 0.7670 -153.0 4.433 73.0 0.0367 22.0 0.2650 -107.0 1.900 0.7660 -157.0 4.220 70.0 0.0370
/datasheets/files/infineon/ehdata/spar/cly29/ze9v0a18.s2p
Infineon 05/08/1998 3.42 Kb S2P ze9v0a18.s2p
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Infineon 08/09/2000 4.71 Kb ZIP cly29.zip
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Philips 16/06/2005 2589.32 Kb TXT docindex-v1.txt
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/download/44210964-145463ZC/cly5.zip ()
Infineon 08/09/2000 191.27 Kb ZIP cly5.zip
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Intersil 13/10/2005 1108.55 Kb JS searchdb.js