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ISL6146BFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil
ISL6146BFUZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil
ISL6146EFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil
ISL6146BFRZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil
ISL6146BFRZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil
ISL6146EFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil

4433+fet

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MITSUBISHI SEMICONDUCTOR MGFC42V3436 3.4 DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The , GaAs FET FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = , MITSUBISHI SEMICONDUCTOR MGFC42V3436 3.4 TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB,GLP vs. f Po,PA E vs. Pin - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET F R E Q U E N C Y f(G H z -
OCR Scan
4433 fet DE-A10
Abstract: MITSUBISHI SEMICONDUCTOR MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V3436 is an internally impedance-matched Unit: millimeters GaAs power FET especially designed for use in 3.4 - 3.6 24+/-0.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. N I 3 M . 2 0 / + 4 . 7 , FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta Mitsubishi
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F4535 high power FET transistor s-parameters VDS-10 GF-18
Abstract: M ITSUBISHI SEM ICONDUCTO R MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm ) system High , FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET T Y P IC A L C H A R A C -
OCR Scan
Abstract: , IRFout2 = 2 mA, VSEL1 = ­10 V, VRFout1 = open circuit, VRFin = GND) Breakdown voltage (Test FET w/ VD = VS , information on these subjects. Additional references AN #57, "FET Switch Speed and Settling Time Atmel
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AT90LS2333 AT90LS4433 AT90S2333 AT90S4433 8 pin 4433 ad 4433 5252 F 1010 AT90S2333/4433 LT-48
Abstract: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:17th , ,520MHz,7.2V,2W OUTLINE DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for , mishap. MITSUBISHI MITSUBISHI RF POWER MOS FET ATTENTION Revision date: 17 /Dec.â'™02 , 11 12 Vdd (V) MITSUBISHI 15 20 25 MITSUBISHI RF POWER MOS FET ATTENTION , 11 12 Vdd (V) MITSUBISHI MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR Conexcon
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4433-T120 4433 T400 material 4433-T140 4433-T160 4433-T200 4433-T220 4433-T240
Abstract: SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Id s = 10 mA 24 HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz L g = 0.35 Jim, W g = 200 |im 21 LOW COST METAL CERAMIC PACKAGE TAPE & REEL PACKAGING OPTION AVAILABLE 18 m *o - (3 15 c 12 Agilent Technologies
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1GG7-8005 PUNSE 1GG7 HMMC-2027 5989-6204EN
Abstract: F K b u ilt-in Z e n e r P U 3127 nsfr-fcfneiT FET b u ilt-in Z e n e r N C hannel P Ü 6 1 C 56 FET N ote) P U 8 4 5 6 is with long lead. A Tentative 130 Panasonic BI Technologies
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SX-4433
Abstract: , VRFout1 = open circuit, VRFin = GND) Breakdown voltage (Test FET w/ VD = VS = GND, IG = ­50 uA) ­6.75 , basic information on these subjects. Additional references AN #57, "FET Switch Speed and Settling Time BI Technologies
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