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418B-01

Catalog Datasheet MFG & Type PDF Document Tags

TB20N20E

Abstract: MTP10N10M G CASE 314B-02 (5 PIN TO-220) S DRAIN o CASE 418B-01 TMOS SENSEFETs SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain current. T hese devices are ideal for curre nt m ode sw itching regulators and m otor controls. D2PAK* Table 11 - Case 418B-01 (Volts) Min 500 400 200 Voss RD S(on)® I d (O hms) (Amps) Device Max 0.8 0.55 0.15 0.058 0.12 4 5 10 16.5 11.5 7.5 0.05
-
OCR Scan
TB20N20E MTP40N06M MTP30N08M MTP10N10M MTD1N50 TB20N20 MTB8N50E TB10N40E TB33N10E TB15N06E TB30N06EL

418B-04

Abstract: marking 5M MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D 2 PAK CASE 418B­04 ISSUE G SCALE 1:1 DATE 07/09/2001 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E V W ­B­ 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 ­T­ SEATING PLANE K W J G D 3 PL 0.13 (0.005) H T B M M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160
ON Semiconductor
Original
marking 5M

b1545

Abstract: Temperature for Soldering Purposes: 260°C Max. for 10 Seconds CASE 418B-01 D2PAK · Shipped 50 units per
-
OCR Scan
b1545 B1545C B1545T MBRB1545CT

418B-01

Abstract: 418B-04 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D 2 PAK CASE 418B-04 ISSUE H DATE 13 JAN 2003 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C SCALE 1:1 E V W -B4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 -TSEATING PLANE K W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE T B M M N R L M
ON Semiconductor
Original
98ASB42761B

418B-04

Abstract: 418B MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B-04 ISSUE K DATE 03 SEP 2008 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E V W -B- 4 1 2 A S 3 -T- SEATING PLANE K J G D DIM A B C D E F G H J K L M N P R S V W H 3 PL 0.13 (0.005) M T B VARIABLE CONFIGURATION ZONE M N
ON Semiconductor
Original
418B On semiconductor date Code d2pak 98AS AYWW marking code IC marking code AYWW
Abstract: n ctio n Tem p eratu re V o lta g e Rate o f C h an g e (R ate d V r ) CASE 418B-01 D2PAK -
OCR Scan
MBRB2515L B2515L

U1620RG

Abstract: U1620rg diode . 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E
ON Semiconductor
Original
MUR1620CTR MURB1620CTR MUR1620CT MURB1620CT U1620RG U1620rg diode U1620R KAK U1620R rectifier u1620rG MUR1620CTRG

UH860G

Abstract: uh860 TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW
ON Semiconductor
Original
MURHB860CT UH860G uh860 uh860 aka on uh860 UH860 diode MURHB860CT/D

MBRB2060CT

Abstract: MBRB2060CTT4 : INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E V W -B- 4 DIM A B C
ON Semiconductor
Original
MBRB2060CT MBRB2060CTT4 B2060 B2060T MBRB2060CT/D

UH840G

Abstract: TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW
ON Semiconductor
Original
UH840G MURHB840CT UH840 MURHB840CTG MURHB840CTT4 MURHB840CTT4G

b2545

Abstract: b2545 transistor manual . DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03
ON Semiconductor
Original
MBRB2545CT b2545 b2545 transistor manual MBRB2545CTT4 B2545 M manual B2545 B2545 MBRB2545CT/D

UH860G

Abstract: 418B-04 . DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03
ON Semiconductor
Original

u1620G

Abstract: U1620 aka ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD
ON Semiconductor
Original
MURB1620CTG NRVUB1620CTT4G u1620G U1620 aka U1620 G u1620 rectifier u1620G u1620 c aka AEC-Q101 U1620G U1620 MURB1620CT/D

B20100G

Abstract: B20100G diode . DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03
ON Semiconductor
Original
NRVBB20100CTT4G NRVBBS20100CTT4G B20100G B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA MBRB20100CTG B20100 MBRB20100CT/D

T23N03

Abstract: NTB23N03R . 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E V
ON Semiconductor
Original
NTB23N03R T23N03 NTB23N03RT4 Code N03 NTB23N03R/D

B4030 AKA

Abstract: B4030G . 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E V
ON Semiconductor
Original
MBRB4030 B4030G B4030 AKA B4030 MBRB4030G MBRB4030T4 MBRB4030/D

13n10

Abstract: 13N10 mosfet ://onsemi.com 6 10 NTB13N10 PACKAGE DIMENSIONS D2PAK CASE 418B-01 ISSUE J C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03
ON Semiconductor
Original
13n10 13N10 mosfet 13n10g AN569 NTB13N10G NTB13N10T4 418AA 13N10G NTB13N10/D

U1660G

Abstract: U1660G aka . DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03
ON Semiconductor
Original
MURB1660CT U1660G U1660 U1660G aka u1660 diode U1660G diode U1660 aka MURB1660CT/D

U1660G

Abstract: U1660G diode DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S
ON Semiconductor
Original
U1660G ON aka U1660G* ON NRVUB1660 murb1660ctg MURB1660CTG MURB1660CTT4G NRVUB1660CTT4G MURB1660C

U1660

Abstract: U1660 m : INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V
ON Semiconductor
Original
U1660 m U1660 a
Abstract: PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD ON Semiconductor
Original
NTB5860NL NTB5860NL/D

b8h100g

Abstract: B8H100 AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03
ON Semiconductor
Original
B8H100 b8h100g MBRB8H100T4G NBRB8H100T4G B8H100G MBRB8H100/D

B2060g

Abstract: *B2060G . 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX
ON Semiconductor
Original
B2060g

u1620G

Abstract: U1620 : 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01
ON Semiconductor
Original
SURB1620CTT4G u1620G aka U1620 diode marking code U1620 U1620g diode MURB1620CTT4G MURB16

UH840G

Abstract: . 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX
ON Semiconductor
Original
SURHB8840CTT4G MURHB840CT/D

B8H100G

Abstract: B8H100 TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW
ON Semiconductor
Original
B8H1 marking 146C C146C
Abstract: . DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 ON Semiconductor
Original
MBRB20200CT B20200 MBRB20200CTT4 800/T MBRB20200CT/D

B2545 AKA

Abstract: b2545g . 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E V W -B- 4 DIM A B C D E F G
ON Semiconductor
Original
B2545 AKA b2545g b2545G AKA B2545G diode MBRB2545CTG MBRB2545CTT4G B2545G

b1645

Abstract: b1645 diode ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD
ON Semiconductor
Original
MBR1635 MBR1645 MBRB1645 b1645 b1645 diode B1645G MBR1645G B16x5 TO-220 MBR1635/D
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