UNR4121/4122/4123/4124/412X/412Y UN4121/4122/4123/4124/412X/412Y UNR4121 - Datasheet Archive

 

UNR4121/4122/4123/4124/412X/412Y (UN4121/4122/4123/4124/412X/412Y) Silicon PNP epitaxial planer transistor For digital circuits

 

Transistors with built-in Resistor UNR4121/4122/4123/4124/412X/412Y UNR4121/4122/4123/4124/412X/412Y (UN4121/4122/4123/4124/412X/412Y UN4121/4122/4123/4124/412X/412Y) Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 3.0±0.2 4.0±0.2 I Features G G G G G G UNR4121 UNR4121 UNR4122 UNR4122 UNR4123 UNR4123 UNR4124 UNR4124 UNR412X UNR412X UNR412Y UNR412Y (R1) 2.2k 4.7k 10k 2.2k 0.27k 3.1k 1 (R2) 2.2k 4.7k 10k 10k 5.0k 4.6k I Absolute Maximum Ratings 2 3 2.0±0.2 15.6±0.5 marking I Resistance by Part Number 0.7±0.1 G Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. +0.2 0.45­0.1 G 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package (Ta=25°C) Internal Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO ­50 V Collector to emitter voltage VCEO ­50 V Collector current IC ­500 mA Total power dissipation PT 300 mW Junction temperature Tj 150 Tstg ­55 to +150 C R2 E °C Storage temperature R1 B °C Note.) The Part numbers in the Parenthesis show conventional part number. 1 Transistors with built-in Resistor I Electrical Characteristics Parameter UNR4121/4122/4123/4124/412X/412Y UNR4121/4122/4123/4124/412X/412Y (Ta=25°C) Symbol Conditions min typ max Unit ICBO VCB = ­50V, IE = 0 ­1 ICBO VCB = ­50V, IE = 0 ­ 0.1 ICEO VCE = ­50V, IB = 0 ­1 ICEO VCE = ­50V, IB = 0 ­ 0.5 IEBO VEB = ­6V, IC = 0 ­2 Collector to base voltage VCBO IC = ­10µA, IE = 0 ­50 V Collector to emitter voltage VCEO IC = ­2mA, IB = 0 ­50 V Collector cutoff current UNR412X UNR412X Collector cutoff current UNR412X UNR412X UNR4121 UNR4121 Emitter cutoff current UNR4123/4124 UNR4123/4124 mA ­1 UNR4121 UNR4121 40 UNR4122/412Y UNR4122/412Y 50 hFE VCE = ­10V, IC = ­100mA Collector to emitter saturation voltage VCE(sat) IC = ­100mA, IB = ­5mA ­ 0.25 UNR412X UNR412X VCE(sat) IC = ­10mA, IB = ­ 0.3mA ­ 0.25 UNR412Y UNR412Y VCE(sat) IC = ­50mA, IB = ­5mA ­ 0.15 UNR4123/4124 UNR4123/4124 UNR412X UNR412X 60 20 Output voltage high level VOH VCC = ­5V, VB = ­ 0.5V, RL = 500 Output voltage low level VOL VCC = ­5V, VB = ­3.5V, RL = 500 Transition frequency fT ­4.9 VCB = ­10V, IE = 50mA, f = 200MHz 80 UNR4123 UNR4123 (­30%) 10 3.1 Resistance ratio 0.8 UNR412X UNR412X R1/R2 UNR412Y UNR412Y Common characteristics chart PT - Ta Total power dissipation PT (mW) 400 300 200 100 0 20 (+30%) 0.27 UNR412Y UNR412Y 0 MHz 4.7 R1 UNR412X UNR412X UNR4124 UNR4124 40 60 80 100 120 140 160 Ambient temperature Ta (°C) V 2.2 UNR4122 UNR4122 Input resistance V V ­ 0.2 UNR4121/4124 UNR4121/4124 2 µA ­5 UNR4122/412X/412Y UNR4122/412X/412Y Forward current transfer ratio µA 1.0 1.2 0.17 0.22 0.27 0.043 0.054 0.065 0.67 k Transistors with built-in Resistor UNR4121/4122/4123/4124/412X/412Y UNR4121/4122/4123/4124/412X/412Y Characteristics charts of UNR4121 UNR4121 IC - VCE VCE(sat) - IC Ta=25°C Collector current IC (mA) ­200 IB=­1.0mA ­160 ­0.9mA ­0.8mA ­0.7mA ­0.6mA ­0.5mA ­120 ­0.4mA ­80 ­0.3mA ­0.2mA ­40 ­0.1mA Collector to emitter saturation voltage VCE(sat) (V) ­100 0 0 ­2 ­4 ­6 ­8 ­10 IC/IB=10 ­30 ­10 ­3 ­1 Ta=75°C ­0.3 25°C ­0.1 ­0.03 Collector to emitter voltage VCE (V) ­25°C ­3 ­10 Ta=75°C 200 100 25°C 0 ­1 ­100 ­300 ­1000 ­3 4 ­100 ­300 ­1000 VIN - IO VO=­5V Ta=25°C ­1000 VO=­0.2V Ta=25°C ­30 ­10 Input voltage VIN (V) 6 ­30 ­100 ­3000 8 ­10 Collector current IC (mA) IO - VIN Output current IO (µA) Collector output capacitance Cob (pF) ­30 ­10000 f=1MHz IE=0 Ta=25°C 10 300 Collector current IC (mA) Cob - VCB 12 VCE=­10V ­25°C ­0.01 ­1 ­12 hFE - IC 400 Forward current transfer ratio hFE ­240 ­300 ­100 ­30 ­10 ­3 ­1 ­0.3 ­0.1 2 ­0.03 ­3 0 ­0.1 ­0.3 ­1 ­3 ­10 Collector to base voltage ­30 ­1 ­0.4 ­100 VCB (V) ­0.6 ­0.8 ­1.0 ­1.2 ­0.01 ­0.1 ­0.3 ­1.4 ­1 ­3 ­10 ­30 ­100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR4122 UNR4122 IC - VCE VCE(sat) - IC Ta=25°C Collector current IC (mA) ­250 IB=­1.0mA ­200 ­0.9mA ­0.8mA ­0.7mA ­150 ­0.6mA ­0.5mA ­100 ­0.4mA ­0.3mA ­0.2mA ­50 ­0.1mA 0 0 ­2 ­4 ­6 ­8 ­10 Collector to emitter voltage VCE (V) ­12 Collector to emitter saturation voltage VCE(sat) (V) ­100 hFE - IC ­30 ­10 ­3 ­1 Ta=75°C ­0.3 25°C ­0.1 ­25°C ­0.03 ­0.01 ­1 160 IC/IB=10 ­3 ­10 ­30 ­100 ­300 ­1000 Collector current IC (mA) Ta=75°C VCE=­10V Forward current transfer ratio hFE ­300 120 25°C 80 ­25°C 40 0 ­1 ­3 ­10 ­30 ­100 ­300 ­1000 Collector current IC (mA) 3 Transistors with built-in Resistor UNR4121/4122/4123/4124/412X/412Y UNR4121/4122/4123/4124/412X/412Y Cob - VCB IO - VIN ­10000 f=1MHz IE=0 Ta=25°C VIN - IO ­100 VO=­5V Ta=25°C ­3000 16 12 8 ­1000 VO=­0.2V Ta=25°C ­30 ­10 Input voltage VIN (V) 20 Output current IO (µA) Collector output capacitance Cob (pF) 24 ­300 ­100 ­30 ­10 ­3 ­1 ­0.3 ­0.1 4 ­3 0 ­0.1 ­0.3 ­1 ­3 ­10 Collector to base voltage ­30 ­1 ­0.4 ­100 VCB (V) ­0.03 ­0.6 ­0.8 ­1.0 ­1.2 ­0.01 ­0.1 ­0.3 ­1.4 Input voltage VIN (V) ­1 ­3 ­10 ­30 ­100 Output current IO (mA) Characteristics charts of UNR4123 UNR4123 IC - VCE VCE(sat) - IC Collector current IC (mA) ­200 IB=­1.0mA ­0.9mA ­0.8mA ­0.7mA ­160 ­120 ­0.6mA ­0.5mA ­80 ­0.4mA ­0.3mA ­40 ­0.2mA ­0.1mA Collector to emitter saturation voltage VCE(sat) (V) Ta=25°C ­100 0 0 ­2 ­4 ­6 ­8 ­10 Collector to emitter voltage VCE IC/IB=10 ­30 ­10 ­3 ­1 Ta=75°C ­0.3 25°C ­0.1 ­0.03 (V) ­3 ­25°C 100 50 ­30 0 ­1 ­100 ­300 ­1000 ­3 12 8 ­30 ­100 ­300 ­1000 VIN - IO ­100 VO=­5V Ta=25°C ­1000 VO=­0.2V Ta=25°C ­30 ­10 Input voltage VIN (V) 16 ­10 Collector current IC (mA) ­3000 Output current IO (µA) Collector output capacitance Cob (pF) 150 IO - VIN f=1MHz IE=0 Ta=25°C ­300 ­100 ­30 ­10 ­3 ­1 ­0.3 ­0.1 4 ­3 0 ­0.1 ­0.3 ­1 ­3 ­10 ­30 ­100 Collector to base voltage VCB (V) 4 ­10 ­10000 20 25°C Collector current IC (mA) Cob - VCB 24 Ta=75°C VCE=­10V ­25°C ­0.01 ­1 ­12 hFE - IC 200 Forward current transfer ratio hFE ­240 ­1 ­0.4 ­0.03 ­0.6 ­0.8 ­1.0 ­1.2 Input voltage VIN (V) ­1.4 ­0.01 ­0.1 ­0.3 ­1 ­3 ­10 ­30 Output current IO (mA) ­100 Transistors with built-in Resistor UNR4121/4122/4123/4124/412X/412Y UNR4121/4122/4123/4124/412X/412Y Characteristics charts of UNR4124 UNR4124 IC - VCE VCE(sat) - IC Collector current IC (mA) ­250 IB=­1.0mA ­200 ­0.9mA ­0.8mA ­0.7mA ­0.6mA ­150 ­0.5mA ­0.4mA ­100 ­0.3mA ­0.2mA ­50 ­0.1mA Collector to emitter saturation voltage VCE(sat) (V) Ta=25°C 0 0 ­2 ­4 ­6 ­8 ­10 ­10 ­3 ­1 Ta=75°C ­0.3 25°C ­0.1 ­0.03 ­0.01 ­1 ­12 400 IC/IB=10 ­30 Collector to emitter voltage VCE (V) ­25°C ­3 ­10 ­30 VCE=­10V 350 300 250 Ta=75°C 200 25°C 150 ­25°C 100 50 0 ­1 ­100 ­300 ­1000 ­3 IO - VIN ­10000 f=1MHz IE=0 Ta=25°C 12 8 ­100 ­300 ­1000 VIN - IO VO=­5V Ta=25°C ­1000 VO=­0.2V Ta=25°C ­30 ­10 Input voltage VIN (V) 16 ­30 ­100 ­3000 Output current IO (µA) 20 ­10 Collector current IC (mA) Collector current IC (mA) Cob - VCB 24 Collector output capacitance Cob (pF) hFE - IC ­100 Forward current transfer ratio hFE ­300 ­300 ­100 ­30 ­10 ­3 ­1 ­0.3 ­0.1 4 ­3 0 ­0.1 ­0.3 ­1 ­3 ­10 Collector to base voltage ­30 ­1 ­0.4 ­100 ­0.03 ­0.6 ­0.8 ­1.0 ­1.2 ­0.01 ­0.1 ­0.3 ­1.4 Input voltage VIN (V) VCB (V) ­1 ­3 ­10 ­30 ­100 Output current IO (mA) Characteristics charts of UNR412X UNR412X IC - VCE VCE(sat) - IC ­100 Collector current IC (mA) ­200 IB=­1.6mA ­160 ­1.4mA ­1.2mA ­120 ­1.0mA ­0.8mA ­80 ­0.6mA ­0.4mA ­40 ­0.2mA 0 0 ­2 ­4 ­6 ­8 ­10 Collector to emitter voltage VCE (V) ­12 hFE - IC ­30 ­10 ­3 ­1 ­0.3 Ta=75°C 25°C ­0.1 ­25°C ­0.03 ­0.01 ­1 240 IC/IB=10 ­3 ­10 ­30 ­100 ­300 ­1000 Collector current IC (mA) VCE=­10V Forward current transfer ratio hFE Ta=25°C Collector to emitter saturation voltage VCE(sat) (V) ­240 200 160 Ta=75°C 120 25°C 80 ­25°C 40 0 ­1 ­3 ­10 ­30 ­100 ­300 ­1000 Collector current IC (mA) 5 Transistors with built-in Resistor UNR4121/4122/4123/4124/412X/412Y UNR4121/4122/4123/4124/412X/412Y Cob - VCB VIN - IO ­100 f=1MHz IE=0 Ta=25°C 20 16 12 8 VO=­0.2V Ta=25°C ­30 Input voltage VIN (V) Collector output capacitance Cob (pF) 24 ­10 ­3 ­1 ­0.3 ­0.1 4 ­0.03 0 ­1 ­3 ­10 ­30 ­0.01 ­0.1 ­0.3 ­100 ­1 ­3 ­10 ­30 ­100 Output current IO (mA) Collector to base voltage VCB (V) Characteristics charts of UNR412Y UNR412Y IC - VCE VCE(sat) - IC IB=­1.2mA ­160 ­1.0mA ­0.8mA ­120 ­0.6mA ­80 ­0.4mA ­40 ­0.2mA 0 ­2 ­4 ­6 ­8 ­10 ­12 IC/IB=10 ­30 ­10 ­3 ­1 ­0.3 Ta=75°C 25°C ­0.1 ­25°C ­0.03 ­0.01 ­1 0 ­3 Cob - VCB ­30 f=1MHz IE=0 Ta=25°C 16 12 8 VO=­0.2V Ta=25°C ­10 ­3 ­1 ­0.3 ­0.1 4 ­0.03 0 ­1 ­3 ­10 ­30 ­100 Collector to base voltage VCB (V) ­0.01 ­0.1 ­0.3 ­1 ­3 VCE=­10V ­10 ­30 Output current IO (mA) 200 160 Ta=75°C 25°C 120 ­25°C 80 40 0 ­1 ­3 ­10 ­30 ­100 ­300 ­1000 Collector current IC (mA) ­30 Input voltage VIN (V) 20 ­100 ­300 ­1000 VIN - IO ­100 24 Collector output capacitance Cob (pF) ­10 Collector current IC (mA) Collector to emitter voltage VCE (V) 240 Forward current transfer ratio hFE Collector current IC (mA) ­200 Collector to emitter saturation voltage VCE(sat) (V) Ta=25°C 6 hFE - IC ­100 ­240 ­100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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