Check Stock and Availability
|
| |
410A Datasheet, Circuit, PDF, & Application Note Results
|
| Contextual Datasheet Results |
1 - 44 of about 44 for 410A |
 |
First line: 3TA130GKxxNB Three Phase Half Bridge Dimensions 1mm Type 3TA130GK03NB 3TA130GK04NB VRSM VRRM Abstract: .. On-State Current 410A, Tj=25oC Inst. measurement. dv/dt. IH. Tj=25oC, IT=1A, VD=6V. Tj=150oC, VD=1/2VDRM. IT=100A, IG=200mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us. Tj=150oC, VD=2/3VDRM, Exponential .. datasheet abstract.. |
868.56 Kb |
3 Pages |
 |
 |
|
|
First line: THYRISTOR MODULE NON-ISOLATED TYPE PWB130A PWB130A Thyristor module suitable voltage phase recifier Abstract: .. On-State Current 410A, Tj 150 Inst. measurement. Tj 25 IT 1A VD 6V. mA. mA. V. Tj 150 VD 1 2VDRM. IT 100A IG 200mA Tj 25 VD 1 2VDRM dIG/dt 1A/ s. 0.25. mA/V. VGT Gate Trigger Voltage, max. Tj 25 IT 1A VD 6V mA/V. V. Tj 150 .. datasheet abstract.. |
393.27 Kb |
2 Pages |
|
|
|
|
First line: Technische Information Technical Information Schnelle Gleichrichterdiode Fast Diode 25°C..Tvj Elektrische Eigenschften Electrical Abstract: .. peak reverse recovery current iFM =410A,-diF/dt=50A/μs. vR=100V, vRM<=200 V. Sperrverzögerungsladung DIN IEC 747-2, Tvj=Tvj max Qr 650 μAs. 1 recovered charge iFM =410 A,-diF/dt=50A/μs. vR .. datasheet abstract.. |
60.27 Kb |
5 Pages |
|
|
|
|
First line: Device Name Issued Date Issued BGDC Page Date Index Mechanical Data dimensions Abstract: .. Measured with probe model : Tektronix P6015A and Scope Model : TDS 410A. Manufacturer Probe error : +/-25% for transient signal C Customer Reference PerkinElmer Proprietary & Confidential .. datasheet abstract.. |
58.99 Kb |
3 Pages |
|
|
|
|
First line: Technische Information Technical Information Schnelle Gleichrichterdiode Fast Diode 25°C..Tvj Elektrische Eigenschften Electrical Abstract: .. peak reverse recovery current iFM =410A,-diF/dt=50A/μs. vR=100V, vRM<=200 V. Sperrverzögerungsladung DIN IEC 747-2, Tvj=Tvj max Qr 650 μAs. 1 recovered charge iFM =410 A,-diF/dt=50A/μs. vR .. datasheet abstract.. |
66.55 Kb |
6 Pages |
|
|
|
|
First line: THYRISTOR MODULENON-ISOLATED TYPE PWB130A PWB130A Thyristor module suitable voltage phase recifier applications. Abstract: .. On-State Current 410A, Tj=150°C Inst. measurement. Tj=25°C,IT=1A,VD=6V. mA. mA. V. Tj=150°C,VD=1?/ 2VDRM IT=100A,IG=200mA,Tj=25°C, VD=1?/ 2VDRM,dIG/dt=1A/μs. 0.25. mA/V. VGT Gate Trigger Voltage .. datasheet abstract.. |
121.92 Kb |
2 Pages |
|
|
|
|
First line: THYRISTOR MODULENON-ISOLATED TYPE PWB130A PWB130A Thyristor module suitable voltage phase recifier applications. Abstract: .. On-State Current 410A, Tj=150°C Inst. measurement. Tj=25°C,IT=1A,VD=6V. mA. mA. V. Tj=150°C,VD=1?/ 2VDRM IT=100A,IG=200mA,Tj=25°C, VD=1?/ 2VDRM,dIG/dt=1A/μs. 0.25. mA/V. VGT Gate Trigger Voltage .. datasheet abstract.. |
101.31 Kb |
2 Pages |
|
|
|
|
First line: 91352B HEXFET Power MOSFET IRF530NS IRF530NL VDSS 100V RDS on Advanced Process Technology Abstract: .. 11 Starting TJ = 25°C, L = 2.3mH RG = 25Ω, IAS = 9.0A, VGS=10V See Figure 12 ISD ≤9.0Adi/d≤410A/μs, VDD≤V BR DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%. This is a typical value at device .. datasheet abstract.. |
605.08 Kb |
10 Pages 
|
|
|
|
|
First line: PRELIMINARY FA38SA50 HEXFET Power MOSFET Fully Isolated Package Easy Parallel On-Resistance Dynamic Abstract: .. 11 É ISD ≤ 38A, di/dt ≤ 410A/μs, VDD ≤ V BR DSS, TJ ≤ 150°C. Notes: Ç Starting TJ = 25°C, L = 0.80mH RG = 25Ω, IAS = 38A. See Figure 12 Ñ Pulse width ≤ 300μs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units .. datasheet abstract.. |
121.76 Kb |
8 Pages |
|
|
|
|
First line: Bulletin PD-20037 rev.A IRHD320CW40 HEXFRED Features Very Lead-Free Benefits Reduced Reduced Snubbing Abstract: .. VR = 400V IF AV = 410A Qrr typ. = 420nC trr typ. = 45ns. BASE COMMON CATHODE. LUG. TERMINAL ANODE 1. LUG. TERMINAL ANODE 2. HEXFRED TM diodes are optimized to reduce losses and EMI/ RFI in high frequency .. datasheet abstract.. |
243.33 Kb |
8 Pages 
|
|
|
|
|
First line: PD-9.1615A FA38SA50LC HEXFET Power MOSFET Fully Isolated Package Easy Parallel On-Resistance Dynamic Abstract: .. 11 É ISD ≤ 38A, di/dt ≤ 410A/μs, VDD ≤ V BR DSS, TJ ≤ 150°C. Notes: Ç Starting TJ = 25°C, L = 0.80mH RG = 25Ω, IAS = 38A. See Figure 12 Ñ Pulse width ≤ 300μs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units .. datasheet abstract.. |
121.79 Kb |
8 Pages |
|
|
|
|
First line: 91352B HEXFET Power MOSFET IRF530NS IRF530NL VDSS 100V RDS on Advanced Process Technology Abstract: .. 11 Starting TJ = 25°C, L = 2.3mH RG = 25Ω, IAS = 9.0A, VGS=10V See Figure 12 ISD ≤9.0Adi/d≤410A/μs, VDD≤V BR DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%. This is a typical value at device .. datasheet abstract.. |
609.17 Kb |
11 Pages
|
|
|
|
|
First line: IRF530NPbF Advanced Process Technology Ultra On-Resistance Dynamic dv / dt Rating 175°C Operating Temperature Abstract: .. ISD ≤9.0Adi/d≤410A/μs, VDD≤V BR DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated .. datasheet abstract.. |
177.58 Kb |
9 Pages
|
|
|
|
|
First line: CONVOLUTED TUBING Convoluted tubing provides efficient method routing protecting wire harness assemblies Abstract: .. Spec LP 410A MIL M-19098. Flammability: UL94-V2 Solvent Effect: None Acid Effect: Satisfactory except for strong acids Alkalis Effect: None. Temp. Range: -121oF -85ÞC to +200oF 93.3ÞC Abrasion .. datasheet abstract.. |
153.91 Kb |
6 Pages |
|
|
|
|
First line: Users Guide BusLogic Burton Drive Santa Clara REV.Al EVISION Revision Change Activity Abstract: .. Floppy Controller BT-410A and only .. ROM BIOS Address .. Green Cache Mode Power Saving Mode .. .. datasheet abstract.. |
597.84 Kb |
30 Pages 
|
|
|
|
|
First line: MOTOROLA COMPUTER GROUP Board Level Products MVME162FX MBEDDED CONTROLLER Advantages MVME162FX family Abstract: .. y indicates product revision level if any; for example, “-410A.” 2. Firmware source and object modules are available upon request. 3. Documentation is also available on line at http://www.mcg .. datasheet abstract.. |
286.43 Kb |
4 Pages |
|
|
|
|
First line: Bulletin I25162 rev. ST230C..C SERIES PHASE CONTROL THYRISTORS Hockey Version Features Center Abstract: .. 410A. PHASE CONTROL THYRISTORS Hockey Puk Version. ST230C..C SERIES. 1. Bulletin I25162 rev. D 04/03. www.irf.com. ST230C..C Series. 2. Bulletin I25162 rev. D 04/03. www.irf.com. di/dt Max. non-repetitive .. datasheet abstract.. |
57.57 Kb |
8 Pages |
|
|
|
|
First line: 91615B FA38SA50LC HEXFET Power MOSFET Fully Isolated Package Easy Parallel On-Resistance Dynamic Abstract: .. 11 É ISD ≤ 38A, di/dt ≤ 410A/μs, VDD ≤ V BR DSS, TJ ≤ 150°C. Notes: Ç Starting TJ = 25°C, L = 0.80mH RG = 25Ω, IAS = 38A. See Figure 12 Ñ Pulse width ≤ 300μs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units .. datasheet abstract.. |
173.83 Kb |
8 Pages |
|
|
|
|
First line: 91798A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 Product Summary Part Number Radiation Abstract: .. ➁ VDD = 50V, starting TJ = 25°C, L=0.54mH Peak IL = 43A, VGS =12V ➂ ISD ≤ 43A, di/dt ≤ 410A/μs, VDD ≤ 200V, TJ ≤ 150°C. Foot Notes: IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA .. datasheet abstract.. |
113.47 Kb |
8 Pages |
|
|
|
|
First line: 91397B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 Product Summary Part Number Abstract: .. ➁ VDD = 25V, starting TJ = 25°C, L= 0.54mH Peak IL = 43A, VGS = 12V ➂ ISD ≤43A, di/dt ≤ 410A/μs, VDD ≤ 200V, TJ ≤ 150°C. Case Outline and Dimensions — SMD-2. Foot Notes: IR WORLD HEADQUARTERS: 233 Kansas .. datasheet abstract.. |
104.11 Kb |
8 Pages |
|
|
|
|
First line: 91862D RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA Product Summary Part Number Radiation Abstract: .. ➁ VDD = 25V, starting TJ = 25°C, L= 0.82 mH Peak IL = 35A, VGS = 12V ➂ ISD ≤ 35A, di/dt ≤ 410A/μs, VDD ≤ 200V, TJ ≤ 150°C. Footnotes: Case Outline and Dimensions — TO-254AA. BERYLLIA WARNING PER MIL-PRF-19500 .. datasheet abstract.. |
109.44 Kb |
8 Pages |
|
|
|
|
First line: IRF530N HEXFET Power MOSFET Advanced Process Technology Ultra On-Resistance Dynamic dv / dt Rating Abstract: .. É ISD ≤ 9.0A, di/dt ≤ 410A/μs, VDD ≤ V BR DSS, TJ ≤ 175°C. Ñ Pulse width ≤ 400μs; duty cycle ≤ 2%. Ö This is a typical value at device destruction and represents operation outside rated limits. Ü This .. datasheet abstract.. |
214.83 Kb |
8 Pages |
|
|
|
|
First line: 91795A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 Product Summary Part Number Abstract: .. ➁ VDD = 25V, starting TJ = 25°C, L=0.38mH Peak IL = 51A, VGS =12V ➂ ISD ≤ 51A, di/dt ≤ 410A/μs, VDD ≤ 100V, TJ ≤ 150°C. Foot Notes: IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA .. datasheet abstract.. |
99.74 Kb |
8 Pages |
|
|
|
|
First line: 91396C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 Product Summary Part Number Abstract: .. ➁ VDD = 25V, starting TJ = 25°C, L= 0.38mH Peak IL = 51A, VGS = 12V ➂ ISD ≤51A, di/dt ≤ 410A/μs, VDD ≤ 100V, TJ ≤ 150°C. Case Outline and Dimensions — SMD-2. Foot Notes: IR WORLD HEADQUARTERS: 233 Kansas .. datasheet abstract.. |
106.2 Kb |
8 Pages |
|
|
|
|
First line: Abstract: .. = 410A 1 "#’ "" # "#+ , #’ ’ "" # += ,1?1+=#11’ & ?1+=# ’1#=& 1%2B+0’11. 1","11+= " 1 .. datasheet abstract.. |
496.22 Kb |
17 Pages |
|
|
|
|
First line: Previous Datasheet Index Next Data Sheet Bulletin I25162 / B ST230C..C SERIES PHASE CONTROL Abstract: .. 410A. PHASE CONTROL THYRISTORS Hockey Puk Version. ST230C..C SERIES. Bulletin I25162/B. Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB .. datasheet abstract.. |
160.13 Kb |
7 Pages |
|
|
|
|
First line: Bulletin I25162 rev. ST230C..C SERIES PHASE CONTROL THYRISTORS Hockey Version Features Center Abstract: .. 410A. PHASE CONTROL THYRISTORS Hockey Puk Version. ST230C..C SERIES. 1. Bulletin I25162 rev. C 01/00. www.irf.com. Features Center amplifying gate. Metal case with ceramic insulator International .. datasheet abstract.. |
83.24 Kb |
7 Pages |
|
|
|
|
First line: REPETITIVE AVALANCHE dv / dt RATED HEXFET TRANSISTOR IRHNB7260 IRHNB8260 MEGA HARD 200Volt MEGA Abstract: .. ISD ≤ 43A, di/dt ≤ 410A/μs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω Pulse width ≤ 300 μs; Duty Cycle ≤ 2% Case Outline and Dimensions — SMD-3. SMD-3. WORLD HEADQUARTERS: 233 Kansas St., El Segundo .. datasheet abstract.. |
107.31 Kb |
8 Pages |
|
|
|
|
First line: REPETITIVE AVALANCHE dv / dt RATED HEXFET TRANSISTOR IRHNB7160 IRHNB8160 N-CHANNEL MEGA HARD 100Volt Abstract: .. ISD ≤ 51A, di/dt ≤ 410A/μs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω Pulse width ≤ 300 μs; Duty Cycle ≤ 2% 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition .. datasheet abstract.. |
107.67 Kb |
8 Pages |
|
|
|
|
First line: 91862B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA Product Summary Part Number Radiation Abstract: .. ➁ VDD = 25V, starting TJ = 25°C, L= 0.82 mH Peak IL = 35A, VGS = 12V ➂ ISD ≤ 35A, di/dt ≤ 410A/μs, VDD ≤ 200V, TJ ≤ 150°C. Footnotes: Case Outline and Dimensions — TO-254AA. LEGEND 1- DRAIN. 2- SOURCE. 3- GATE .. datasheet abstract.. |
104.09 Kb |
8 Pages |
|
|
|
|
First line: Bulletin I25162 rev. ST230C..C SERIES PHASE CONTROL THYRISTORS Hockey Version Features Center Abstract: .. 410A. PHASE CONTROL THYRISTORS Hockey Puk Version. ST230C..C SERIES. Bulletin I25162 rev. D 04/03. Document Number: 93723. www.vishay.com 1. ST230C..C Series. Bulletin I25162 rev. D 04/03. di/dt .. datasheet abstract.. |
84.99 Kb |
9 Pages |
|
|
|
|
First line: 91397D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 Product Summary Part Number Abstract: .. VDD = 50V, starting TJ = 25°C, L= 0.54mH Peak IL = 43A, VGS = 12V ISD ≤ 43A, di/dt ≤ 410A/μs, VDD ≤ 200V, TJ ≤ 150°C. Case Outline and Dimensions — SMD-2. Foot Notes: IR WORLD HEADQUARTERS: 233 Kansas St. .. datasheet abstract.. |
164.26 Kb |
8 Pages |
|
|
|
|
First line: 91396E RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 Product Summary Part Number Abstract: .. VDD = 25V, starting TJ = 25°C, L= 0.38mH Peak IL = 51A, VGS = 12V ISD ≤ 51A, di/dt ≤ 410A/μs, VDD ≤ 100V, TJ ≤ 150°C. Case Outline and Dimensions — SMD-2. Foot Notes: IR WORLD HEADQUARTERS: 233 Kansas St. .. datasheet abstract.. |
164.62 Kb |
8 Pages |
|
|
|
|
First line: REPETITIVE AVALANCHE dv / dt RATED HEXFET TRANSISTOR 100Volt HARD HEXFET International Rectifiers HARD Abstract: .. É ISD ≤ 51A, di/dt ≤ 410A/μs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω Ñ Pulse width ≤ 300 μs; Duty Cycle ≤ 2% Ö K/W = °C/W. W/K = W/°C. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 .. datasheet abstract.. |
104.45 Kb |
8 Pages |
|
|
|
|
First line: Provisional Data Sheet PD-9.1332B REPETITIVE AVALANCHE dv / dt RATED HEXFET TRANSISTOR IRHM7260 IRHM8260 Abstract: .. = 25°C, EAS = [0.5 * L * IL2 ] Peak IL = 35A, VGS = 12V, 25 ≤ RG ≤ 200Ω É ISD ≤ 35A, di/dt ≤ 410A/μs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω Ñ Pulse width ≤ 300 μs; Duty Cycle ≤ 2% Ö K/W = °C/W. W/K = W/°C. Case .. datasheet abstract.. |
94.97 Kb |
8 Pages |
|
|
|
|
First line: Bulletin I25162 rev. ST230C..C SERIES PHASE CONTROL THYRISTORS Hockey Version Features Center Abstract: .. 410A. PHASE CONTROL THYRISTORS Hockey Puk Version. ST230C..C SERIES. 1. Bulletin I25162 rev. B 01/94. www.irf.com. Features Center amplifying gate. Metal case with ceramic insulator International .. datasheet abstract.. |
59.98 Kb |
7 Pages |
|
|
|
|
First line: PD-91332F RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA Product Summary Part Number Radiation Abstract: .. VDD = 50V, starting TJ = 25°C, L=0.82mH Peak IL = 35A, VGS =12V ISD ≤ 35A, di/dt ≤ 410A/μs, VDD ≤ 200V, TJ ≤ 150°C. Foot Notes: Case Outline and Dimensions — TO-254AA. 3.81 [.150] 0.12 [.005] 1.27 [.050 .. datasheet abstract.. |
160.11 Kb |
8 Pages |
|
|
|
|
First line: IRF530N HEXFET Power MOSFET Advanced Process Technology Ultra On-Resistance Dynamic dv / dt Rating Abstract: .. É ISD ≤ 9.0A, di/dt ≤ 410A/μs, VDD ≤ V BR DSS, TJ ≤ 175°C. Ñ Pulse width ≤ 400μs; duty cycle ≤ 2%. Ö This is a typical value at device destruction and represents operation outside rated limits. Ü This .. datasheet abstract.. |
218.93 Kb |
9 Pages |
|
|
|
|
First line: HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Abstract: .. ISD ≤ 57A, di/dt ≤ 410A/μs, VDD ≤ V BR DSS, TJ ≤ 175°C. Starting TJ = 25°C, L = 0.15mH RG = 25Ω , IAS = 57A. See Figure 12 Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives .. datasheet abstract.. |
225.45 Kb |
12 Pages
|
|
|
|
|
First line: 91862A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA Product Summary Part Number Radiation Abstract: .. ➁ VDD = 25V, starting TJ = 25°C, L= 0.82 mH Peak IL = 35A, VGS = 12V ➂ ISD ≤ 35A, di/dt ≤ 410A/μs, VDD ≤ 200V, TJ ≤ 150°C. Footnotes: Case Outline and Dimensions — TO-254AA. LEGEND 1- DRAIN. 2- SOURCE. 3- GATE .. datasheet abstract.. |
95.21 Kb |
8 Pages |
|
|
|
|
First line: 91332C REPETITIVE AVALANCHE dv / dt RATED HEXFET TRANSISTOR IRHM7260 IRHM8260 N-CHANNEL MEGA HARD Abstract: .. = 25°C, EAS = [0.5 * L * IL2 ] Peak IL = 35A, VGS = 12V, 25 ≤ RG ≤ 200Ω É ISD ≤ 35A, di/dt ≤ 410A/μs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω Ñ Pulse width ≤ 300 μs; Duty Cycle ≤ 2% Case Outline and Dimensions .. datasheet abstract.. |
127.51 Kb |
8 Pages |
|
|
|
|
First line: Networking Protecting PRO-DUCT WIRING DUCT RACEWAY INFOSTREAM MULTI-CHANNEL RACEWAY SUMMARY HELLERMANNTYTON COMMUNICATIONS Abstract: .. Spec LP 410A MIL M-19098. Flammability: UL94-V2 Solvent Effect: None Acid Effect: Satisfactory except for strong acids Alkalis Effect: None. Temp. Range: -121oF -85ÞC to +200oF 93.3ÞC Abrasion .. datasheet abstract.. |
1454.64 Kb |
34 Pages |
|
|
|
|
First line: MITSUBISHI SEMICONDUCTORS POWER MODULES USING INTELLIGENT POWER MODULES Introduction Intelligent Power Modules Abstract: .. 410A. IC=200A/div, VCE=100V/div, t=1μs/div. T. T. MITSUBISHI SEMICONDUCTORS POWER MODULES MOS. USING INTELLIGENT POWER MODULES. Sep.1998. Table 6.2 Motor Rating vs. OC Protection 230 VAC Line Current .. datasheet abstract.. |
1010.06 Kb |
31 Pages |
|
|
|
|
First line: Matsushita Electric Group Chemical Substance Management Rank Guidelines Version July Matsushita Electric Abstract: .. Reduction HFCs M-05 R-410A 902 Reduction. Reduction HFCs M-06 R-410B 902 Reduction. Reduction HFCs M-07 R-507A 902 Reduction. Reduction HFCs M-08 R-508A 902 Reduction. Reduction HFCs M-09 R-508B .. datasheet abstract.. |
204.26 Kb |
39 Pages |
|
|
|
| |
|
| Specsheet Results |
|
|
410A |
Powerex Power Semiconductors |
Silicon Rectifier |
Specification |
|
|
|
410A002D1L |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Differential,L=470 +/-5mil |
Specification |
|
|
|
410A002D1N |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Differential,N= no Tube. |
Specification |
|
|
|
410A002D1S |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Differential,S=300 +/-3mil |
Specification |
|
|
|
410A002D3L |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Differential,L=470 +/-5mil |
Specification |
|
|
|
410A002D3N |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Differential,N= no Tube. |
Specification |
|
|
|
410A002D3S |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Differential,S=300 +/-3mil |
Specification |
|
|
|
410A002G1L |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Gage,L=470 +/-5mil |
Specification |
|
|
|
410A002G1N |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Gage,N= no Tube. |
Specification |
|
|
|
410A002G1S |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Gage,S=300 +/-3mil |
Specification |
|
|
|
410A002G3L |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Gage,L=470 +/-5mil |
Specification |
|
|
|
410A002G3N |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Gage,N= no Tube. |
Specification |
|
|
|
410A002G3S |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-2 psi,Linear .1%,Gage,S=300 +/-3mil |
Specification |
|
|
|
410A005A1L |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-5 psi,Linear .1%,Absolute,L=470 +/-5mil |
Specification |
|
|
|
410A005A1N |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-5 psi,Linear .1%,Absolute,N= no tube. |
Specification |
|
|
|
410A005A1S |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-5 psi,Linear .1%,Absolute,S=300 +/-3mil |
Specification |
|
|
|
410A005A3L |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-5 psi,Linear .1%,Absolute,L=470 +/-5mil |
Specification |
|
|
|
410A005A3N |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-5 psi,Linear .1%,Absolute,N= no tube. |
Specification |
|
|
|
410A005A3S |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-5 psi,Linear .1%,Absolute,S=300 +/-3mil |
Specification |
|
|
|
410A005D1L |
IC Sensors, Inc. |
Pressure-Strain Gauge Sensor - 0-5 psi,Linear .1%,Differential,L=470 +/-5mil |
Specification |
|
|
|
|
 Search Help
View our Search Example to help improve your search results.
| Parts Directory |
| Part number starts with: |
|
|
| Data Book Scanning Project |
 
We have scanned over 1 million electronic component datasheets from 2500 data books. This data on obsolete parts is ONLY available on the Datasheet Archive. |
Data Books
|
| Datasheet Indexer |
| Our unique and powerful new search allows full text searching of around 100 million parts. |
Datasheet Index
|
| |
|
|
