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4096X1-BIT

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Abstract: ® MOTOROLA MCM146504 MCM146504 Product Preview 4096X1-BIT STATIC RANDOM ACCESS MEMORIES The MCM146504 MCM146504 is a 4096X1-bit static random access memory, fabricated with high density, high reliability CMOS silicon-gate technology. The device has TTL compatible inputs and outputs. It is designed to retain data at low supply voltages, to further reduce supply current requirements. The MCM146504 MCM146504 is useful in memory , - IM6504 IM6504 CMOS LSI (LOW-POWER COMPLEMENTARY MOSI 4096X1-BIT STATIC RANDOM ACCESS MEMORIES PIN ... OCR Scan
datasheet

1 pages,
34.44 Kb

MCM146504 IM6504 HM6504 4096X1 4096X1-BIT 4096X1-BIT abstract
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Abstract: AT MOSTEK 4096x1-BIT STATIC RAM Processed to MIL-STD-883 MIL-STD-883, Method 5004, Class B MKB4104 MKB4104 (P/J/E)-84/85 FEATURES - Extended operating temperature range (-55°C < T^ < 125°C) - Combination static storage cells and dynamic control circuitry for truly high performance Part Number Access Time Cycle Time 4104(J)-84 250ns 385ns 4104(J)-85 300ns 510ns - Average power dissipation less than 150mW - Standby power dissipation less than 53mW - Single +5V power supply (5% tolerance) - Fully TTL compatible ... OCR Scan
datasheet

3 pages,
131.95 Kb

MOSTEK MEMORY mostek boards MOSTEK MKB4104-85 MKB4104-84 MK4104 4096X1-BIT MIL-STD-883 MKB4104 MIL-STD-883 abstract
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Abstract: MOSTEK 4096x1-BIT STATIC RAM MK4104 MK4104(J/N/E) Series FEATURES - Combination static storage cells and dynamic control circuitry for truly high performance PART NUMBER ACCESS TIME CYCLE TIME MK4104-3/-33 MK4104-3/-33 200ns 310ns MK4104-4/-34 MK4104-4/-34 250ns 385ns MK4104-5/-35 MK4104-5/-35 300ns 460ns M K4104-6 K4104-6 350ns 535ns - Low Active Power Dissipation: 150mW (Max) - Battery backup mode (3V/10mW on -33, -34 and -35) DESCRIPTION The MOSTEK MK 4104 is a high performance static random' access memory organized! as 4096 one bit ... OCR Scan
datasheet

6 pages,
243.1 Kb

WF VQC 10 4096X1-BIT MK4104 Mostek Mostek MOSTEK MEMORY MK4104-34 Mostek MK3880 K4104-6 MK4104 datasheet abstract
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Abstract: MOSTEK 4096x1-BIT DYNAMIC RAM MK4200 MK4200(K/N)-11/16 FEATURES - Industry standard 16-pin DIP configuration (available in plastic (N) and ceramic (K) packages) - All inputs are low capacitance and TTL compatible, except RAS (MOS level) - Input latches for address, chip select and data in - Inputs protected against static charge - Three-state TTL compatible output, latched and valid into next cycle - Proven reliability with high performance Part Number Access Time Cycle Time Max Power* MK 4200-16 300 ns 425 ns 380 ... OCR Scan
datasheet

7 pages,
343.41 Kb

4096X1-BIT 4200D MK4200 MK4200 abstract
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Abstract: MOSTEK 4096x1-BIT DYNAMIC RAM MK4027 MK4027(J/N)-2/3 FEATURES - Industry standard 16-pin DIP (MK 4096) configuration - 120ns access time, 320ns cycle (MK4027-1 MK4027-1) 150ns access time, 320ns cycle (MK4027-2 MK4027-2) 200ns access time, 375ns cycle (MK4027-3 MK4027-3) - ±10% tolerance on all supplies ( +12V, ±5V) - ECL compatible on Vgg power supply (-5.7V) - Low Power: 462mW active (max) 27mW standby (max) DESCRIPTION The MK 4027 is a 4096 word by 1 bit MOS random access memory circuit fabricated with MOSTEK's N-channel ... OCR Scan
datasheet

11 pages,
967.31 Kb

4096X1-BIT CD 4027 MK 4027 MK4027 MK4027-1 MK4027-2 MK4027-3 4096X1 4027 ram MK4027-1 abstract
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Abstract: MOSTEK 4096x1-BIT DYNAMIC RAM MK4027 MK4027(J/IM)-2/3 features a Industry standard 16-pin DIP (MK 4096) configuration - 120ns access time, 320ns cycle (MK4027-1 MK4027-1) 150ns access time, 320ns cycle (MK4027-2 MK4027-2) 200ns access time, 375ns cycle (MK4027-3 MK4027-3) - ±10% tolerance on all supplies ( +12V, +5V) - ECL compatible on VgB power supply (-5.7V) - Low Power: 462mW active (max) 27mW standby (max) description The MK 4027 is a 4096 word by 1 bit MOS random access memory circuit fabricated with MOSTEK's N-chiannel ... OCR Scan
datasheet

11 pages,
475.66 Kb

4027 pin diagram IC 4027 4027 ram MK4027 501C MK4027-2 mk4027.1 MK4027-3 4096X1-BIT MK4027-1 purpose of IC 4027 IC CD 4027 IC 4027 pin diagram datasheet abstract
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Abstract: MOS INTEGRATED CIRCUITS Shift registers rYPE s 'a co z o 1- >- CD O > u > o > 0 Ni X s > X > X < (mA) S u 0 LU LU CD < V c >• a u V co co UJ a o ? a-oc u C/3 LU a _1 0 z 1 o LU t- u > 0 > C3 > X (O E > o > O _o G _C3 co Z o o er LU S o a. CD Z < cc Cu S LU 1- o < Q_ M 142 S Quad 80 bit single phase 2 5 - - 3 2 2.4 - 50 Oed 280 0-70 DIP M,K M 142 A S Quad 80 bit single phase 2 5 - - 5 2 2.4 - 50 (Icc) 280 0-70 DIP M,K M 130 D 1024 bit two phase 1 5 -5 - 5 3.05 3.15 35 - 500 0-70 TO-99, M ... OCR Scan
datasheet

1 pages,
35.87 Kb

ROM 2k x 8 ram 512x8 M330A 1024x1 static ram rom 512x8 datasheet abstract
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Abstract: Single Copy Z6104 Z6104 Handle Wit 4096 X1 Bit Static RAM Product Specification JANUARY 1978 Preliminary Features Description < - 4096 X 1 organization - Static data storage circuitry (no refresh required) - Single phase chip enable clock generator circuitry - Separate data in and data output pins Access/Cycle Operating times: power* 100/160 ns 320 mW Z6104-1 Z6104-1 150/240 ns 320 mW Z6104-2 Z6104-2 200/320 ns 320 mW Z6104-3 Z6104-3 250/380 ns 165 mW Z6104-4 Z6104-4 300/440 ns 165 mW Z6104-5 Z6104-5 350/510 ns 165 mW Z6 ... OCR Scan
datasheet

4 pages,
181.91 Kb

Z6104CS Z6104-4 Z6104-2 Z6104 8891 Z6104-5 Z6104-1 Z6104-3 zilog 6104 Z6104 abstract
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Abstract: I-mWUPlCAflflH-r lô^oaTOBER5!1!^33* [REQUIREMENTS REMOVED I SUPERSEDIHfi- MIL-M-38510/233 MIL-M-38510/233(USAF) 30 September 1980 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, TTL, 4096 8IT STATIC RANDOM ACCESS MEMORY (SRAM) MONOLITHIC SILICON I Inactive for new design after date of this revision I This specification Is approved for use by all Departments and Agencies of the Departnent of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, TTL, static ... OCR Scan
datasheet

28 pages,
664.95 Kb

E 13007 ANI 1015 233a diode 13005 2 mxl 5007 datasheet abstract
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Abstract: ( mil-m-38510/245A 28 January 1987 SUPERiWm mil -#-38510/245{USAF) 5 April 1983 military specification microcircuits, digital. cmos, 4096 bit, static random access kdwrmsram) , bu-k silicon amd silicon 0« sapphire This specification 1s approved for use by »^P^" ments and Agencies of the Départant of Defense. 1. SCOPE ,.1 scope. IMS specific, t,.n «.«r, «t^n re^r-e»« f.r ^^»^^¡^ses. and are reflected in the part number. 1.2 Partjunnber. The part number shall be in accordance with mil-m-38 ... OCR Scan
datasheet

62 pages,
2064.29 Kb

transistor switch 13009 13005 TRANSISTOR F10IF1IIF12IF13 HALL EFFECT TRANSISTOR 17S Hardness Tester SH 21 IAIO 3Y lsd 3010 "silicon on sapphire" mi 6514 SAW 13009 transistor 13005 CIRCUIT gm f131 MIL-M-38510/245A MIL-H-38510/2455 MIL-M-38510/245A abstract
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