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Part Manufacturer Description Datasheet BUY
CD4070BKMSR Intersil Corporation 4000/14000/40000 SERIES, QUAD 2-INPUT XOR GATE, CDFP14, CERAMIC, FP-14 visit Intersil
CD4070BDMSR Intersil Corporation 4000/14000/40000 SERIES, QUAD 2-INPUT XOR GATE, CDIP14, BRAZE SEALED, DIP-14 visit Intersil
CD4070BME4 Texas Instruments 4000/14000/40000 SERIES, QUAD 2-INPUT XOR GATE, PDSO14, GREEN, PLASTIC, MS-012AB, SOIC-14 visit Texas Instruments
CD4070BPWRG4 Texas Instruments 4000/14000/40000 SERIES, QUAD 2-INPUT XOR GATE, PDSO14, GREEN, PLASTIC, TSSOP-14 visit Texas Instruments
CD4070BMTG4 Texas Instruments 4000/14000/40000 SERIES, QUAD 2-INPUT XOR GATE, PDSO14, GREEN, PLASTIC, MS-012AB, SOIC-14 visit Texas Instruments
CD4070BMG4 Texas Instruments CMOS Quad Exclusive-OR Gate 14-SOIC -55 to 125 visit Texas Instruments

4070 CMOS XOR

Catalog Datasheet MFG & Type PDF Document Tags

74573

Abstract: 74574 74266 4030 4070 4077 Buffers 7 of 12 Function Quad 2-Input XOR Gate Quad 2-Input XOR Gate , CMOS chips that are readily available over the counter ( from such places as Maplin Electronics in the UK ). Tables of both TTL and CMOS devices are provided along with tables grouping chips with the same functionality together. The following tables are available . TTL Device Summary CMOS Device Summary NAND Gates NOR Gates AND Gates OR Gates XOR Gates Buffers Inverters Interface Devices
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MK1210

Abstract: 4070 CMOS XOR B . C 281 285 . U15852JJ4V0UD 3 CMOS MOS MOS MOS MOS CMOS CMOS NMOSCMOS VDD GND MOS MOS FIPNEC EEPROMNEC WindowsWindows , TA = -4070 µ PD78E9862 1. 2 U15852JJ4V0UD 23 1 1. 3 µ , .0 MHz 8×8 16 I/O 22 CMOS 13 CMOS 6 CMOS 1 N-ch 2 16 , -4070 2 2. 1 1 P00-P03 0 - - 4 1
NEC
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MK1210 4070 CMOS XOR 10000H-D1D21 uPD789852 2316S uPD789862 PD789862 U15852JJ4V0UD004 HP9000700 PD78E98 352PM2 2285CR5

SCR BCR 406

Abstract: ST0288 27ROM.715 28PD78F4938.725 29.731 .765 U13987JJ1V0UM00 3 CMOS MOS MOS MOS NEC MOS CMOS CMOS NMOSCMOS VDD GND MOS MOS FIP IEBus, Inter Equipment
NEC
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SCR BCR 406 ST0288 10CR1 CIC10 RAM D446 ic bt 2323 m PD784938 PD784935 PD784936 PD784937 PD78F4938 15PWM

O464

Abstract: 1613A 27ROM.707 28PD78F4938A.716 29.721 .754 U15609JJ1V0UM 3 CMOS MOS MOS MOS NEC MOS CMOS CMOS NMOSCMOS VDD GND MOS MOS FIP IEBus, Inter Equipment
NEC
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O464 1613A 40166 N50H uPD784908 uPD784935A PD784938A PD784935A PD784936A PD784937A PD78F4938A U15609JJ1V0UM00

10CR1

Abstract: TM1307 22.555 23.563 24.645 25.677 26.699 27PD78P4908.705 28.715 .749 3 CMOS MOS MOS MOS NEC MOS CMOS CMOS NMOSCMOS VDD GND MOS MOS 4
NEC
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TM1307 23-BRKCS scr bt 119 TGS 813 1023cr11 pd16312 PD784908 PD784907 PD78P4908 U11787JJ2V0UM00 18I/O 19I/O

TLX-1741

Abstract: 4070 CMOS XOR (1) Portadresse *) O C XOR setzen/löschen G 84h Radius Kreis zeichnen P , den nächsten Befehlen werden vier Geraden als Rahmen der Anzeige (40-70) und eine waagrechte Linie , angeschlossen werden. Bild 3 Achtung: An den Eingängen TC0 bis TC7 dürfen nur CMOS- Pegel anliegen! 5
Electronic Assembly
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9700-T69 T6963C T6963 TLX-1741 MM74C922N P240-6K2 RS-232 P128-7KEL 7160-7KC 7160-7KLED

4070 CMOS XOR

Abstract: CPU Zilog 3 > 2 iL 0 5 P r o d u c t S pecific atio n Z86C12 Z8® CMOS IN -C IR C U IT EMULATOR FEATURES 8-bit CMOS M icrocontroller Emulator 84-Pin PGA Package 4.5 to 5.5 Volt O perating Range , following exceptions: Z86C12 Z8* CMOS In-Circuit E mulator No internal ROM is provided, so that code , * /SIZE1 /SIZE2 /SIZE3 SIZE4 /IACK /MAS /MDS /SYNC SCLK GND GND1 GND2 GND3 Z86C12 Z8* CMOS In -Circuit , edge of this signal is used to latch the current m em ory address on Z86C12 Z8* CMOS In-Circuit E
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OCR Scan
CPU Zilog Z86C1216GSE 86C12

lm294oct

Abstract: d71054c adder 4-bit magnitude comparator Quad 2-input XOR gate Decade counter Divide by 12 counter $0.25 , trigger 13 input NAND gate Quad 2-in XOR gate O/C output 3 to 8 line decoder/demux 1-of-8 decoder , with clock enable Quad D flip-flop with clock enable Quad 2-input XOR gate Dual decade ripple , 16 16 14 16 16 16 16 16 16 20 Each Pins Description Quad 2-input XOR gate Quad , comparator Quad 2-input XOR gate 64-bit RAM open collector Decade counter 8-bit shift register 4
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lm294oct d71054c D71055C lm294oct-12 7486 XOR GATE 74c928 74LS00 74LS01 74LS02 74LS03 74LS04 74LS05

754244

Abstract: PTH01 16×400H-41FH RC × × CMOS CMOS 13 217/fX, 215/fX , TYPE D VDD VDD data P-ch P-ch OUT IN output disable N-ch CMOS TYPE B N-ch , if XA = rp' XA = rp' ADDC SUBS SUBC AND OR XOR , ms MIN. EEPROM tEEW 1.0 MHzRC 3.8 EEPROM EEWT TA = -4070 100000 byte , = -4070 100000 byte TA = -4085 80000 byte TA = -4085 VDD = 1.86.0 V
NEC
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754244 PTH01 PCC128 SBS-14 uPD754144 uPD754144GS PD754144 PD754244EEPROMTM 754244U10676J EEPROM16 PD754144RC PD754244

rbs 6102

Abstract: SBS 14 16×400H-41FH RC × × CMOS CMOS 13 217/fX, 215/fX , TYPE D VDD VDD data P-ch P-ch OUT IN output disable N-ch CMOS TYPE B N-ch , if XA = rp' XA = rp' ADDC SUBS SUBC AND OR XOR , ms MIN. EEPROM tEEW 1.0 MHzRC 3.8 EEPROM EEWT TA = -4070 100000 byte , = -4070 100000 byte TA = -4085 80000 byte TA = -4085 VDD = 1.86.0 V
NEC
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rbs 6102 SBS 14 uPD754244 uPD754244GS u1004 PC11 CCPD754244PD754144 U10040JJ1V1DS00 PD754144GS- 20SOP300 PD754244GS- U10040JJ1V1DS

Btm 220

Abstract: 275mov U10676JJ3V0UM 3 CMOS MOS MOS MOS NEC MOS CMOS CMOS NMOSCMOS VDD GND MOS , × × CMOS CMOS 13 16 16 STOPHALT , TYPE A TYPE D VDD VDD data P-ch P-ch OUT IN output disable N-ch CMOS TYPE , MOV1 CY, mem*.bit CY AND1 CY, mem*.bit CYAND/OR/XOR OR1 CY, mem*.bit CY XOR1 , MHz PD754244.4.0 ms10.0 ms EEPROMEWE EEPROM TA = -4070 .10 TA = -4085 . EEPROM
NEC
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Btm 220 275mov hlx crystal U10676JJ3V0UM00 75F4264 PD754144754244 PD754144PD754244 FAX044435-9608

Z117

Abstract: 331 y55 voltage, DVDD, 2.5 ~ 3.3 V Analog supply voltage, AVDD, 5.0±0.5V CMOS technology Support cascade , Shift Register DO/I XOR Operation Sampling Register Hold Register GS1~2 Mode Control LOAD , -4730 -4615 -4470 -4400 -4330 -4215 -4070 -4000 -3930 -3815 -3670 -3600 -3530 -3415 -3265 -3205 -2995
Hynix Semiconductor
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Z117 331 y55 Y48311 y 718 z132 HM18TS402

transistor Bc 949

Abstract: BV EI 481 1120 U13987EJ1V0UM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric , UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If , generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down
NEC
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transistor Bc 949 BV EI 481 1120 substitute for transistor NEC D 587 0FF50 bipolar PROM BV EI 305 2052

u1560

Abstract: BV EI 306 2063 FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when , UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If , generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down
Renesas Electronics
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u1560 BV EI 306 2063 uPD784936A uPD784937A uPD784938A uPD78F4938A U15609EJ1V0UM

ram 4532

Abstract: 431 transistor ic ) © Printed in Japan 1996 [MEMO] 2 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR , with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins , malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must
Renesas Electronics
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ram 4532 431 transistor ic etc446 uPD784038 uPD784907 uPD78P4908

uPD78F4938

Abstract: television service manual U13987EJ1V0UM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric , UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If , generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down
Renesas Electronics
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uPD78F4938 television service manual television service mode manual uPD784938 RX 150 batch counter TRANSISTOR BC 187
Abstract: U15609EJ1V0UM NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric , UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If , generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down NEC
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U15609EJ1V0UM00

AOI32

Abstract: BT33 ASIC CMOS 5SE Databook Notices: Before using this information and the product it supports, be , or service marks of others. Third Edition (Revision 8: 6/12/2000) This edition applies to CMOS , , 2000. All rights re- served. CMOS 5SE Summary of Changes Summary of Changes Date Revision , , Function Name Descriptions: Latches CMOS 5SE SA14-2212-02R3 Contents List of Cells , representative for the latest information. Contents v CMOS 5SE SA14-2212-02R3 How to Read
IBM
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AOI32 BT33 cmos logic databook OAI221 2 TO 4 DECODER cmos 266 XnOR GATE SA14-2212-02R8

DA218

Abstract: ua743 C . 990 D . 981 1006 U16031JJ7V0UD 3 CMOS CMOSVILMAX.VIHMIN. VIL MAX.VIHMIN. CMOS CMOS VDD GND MOS MOS MOS MOS , SSCG8 HALTIDLESTOP 176LQFP24×24 CMOS 1. 3 NCDVDPPC 1. 4
NEC
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DA218 ua743 DA323 UAA 1006 di 765 ifc25 BC314 V850E/ME2 PD703111B U16031JJ7V0UD007 V850E1 V850E/ME PD703111AGM-10-UEU

78F0859

Abstract: 78F0856 11. 12. 1. 2. 1 CMOS CMOSVILMAX.VIHMIN. VILMAX. VIHMIN. CMOS CMOS VDDGND MOS MOS MOS MOS , 816 8×816÷8 BCD I/O 11 CMOS9 CMOS 15 CMOS 13 CMOS 24 CMOS 22 CMOS 2 , -AQ 5-AS VDD VDD pullup enable pullup enable P-ch P-ch VDD VDD CMOS/N-ch OD
NEC
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78F0855 78F0856 78F0858 78F0859 PD78F0864 78F0865 DAP11 78K0/F 78K0/FY2-L PD78F0854 78K0/FA2-L
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