Datasheet Search Results			1 - 1 of about 1 for 405000
	405000	B&B Electronics Mfg	Transmit Temperature Over 4-20mA	26.99 Kb,  1 Pages.

Fulltext Datasheet Results		1 - 50 of about 66 for 405000
	First line: Documentation Number 4050003599 Recommended Installation Please contact Technical Support more information. Transmit Temperature Over 4-20mA Abstract: .. Transmit Temperature Over 4-20mA 4-20mA CE Model 405000. The Model 405000 transmitter converts a J-type thermocouple, K-type thermocouple, or Pt 100Ω RTD signal into a 4-20mA 4-20mA analog signal. This signal ..  Tags: Thermocouple Type K  thermocouple  Temperature to 4-20mA  k type thermocouple  J type thermocouple  circuit with thermocouple application  accuracy of K type thermocouple  a---4-20mA   datasheet abstract..	26.99 Kb	1 Pages	Original
	First line: Thyristors T370 Typical applications D.C. Motor control, Controlled rectifiers, A.C. Controllers Type T370/14 T370/16 T370/18 T370/22 T370/26 T370/29 VRRM (Volts) 1400 1600 1800 2200 2600 2900 VRSM (Volts) 1500 1700 1900 2300 2700 3000 Abstract: .. I2t Tvj = 125 ÌŠC;10 ms half sine 405000 A2s. Tvj = 125 ÌŠC; 3 ms half sine 315000 A2s. IGT Tvj = 25 ÌŠC; VDRM = 5V 150 mA. VGT Tvj = 25 ÌŠC; VDRM = 5V 3.5 V. dv/dt Tvj = 125 ÌŠC ; Voltage = 67 % VDRM *300 V/μs. [di/dt] CR Repetitive ..  Tags:   datasheet abstract..	239.81 Kb	3 Pages	Original
	First line: t430 t430 transistor Thyristors T430 Typical applications D.C. Motor control, Controlled rectifiers, A.C. Controllers Type T430/14 T430/16 T430/18 T430/22 T430/26 T430/29 Symbol T(AV) dv/dt [di/dt] IRRM/IDRM th(j-h) VRRM (Volts) 1400 1600 1800 2200 2600 2900 VRSM (Volts) 1500 1700 1900 2300 2700 300 Abstract: .. I2t Tvj = 125 ÌŠC;10 ms half sine 405000 A2s. Tvj = 125 ÌŠC; 3 ms half sine 315000 A2s. IGT Tvj = 25 ÌŠC; VDRM = 5V 150 mA. VGT Tvj = 25 ÌŠC; VDRM = 5V 3.5 V. dv/dt Tvj = 125 ÌŠC ; Voltage = 67 % VDRM *200 V/μs. [di/dt] CR Repetitive ..  Tags: T430-16  t430 transistor  t430*  315000   datasheet abstract..	232.83 Kb	3 Pages	Original
	First line: Power Module Assembly (Thyristor Thyristor Module) Abstract: .. 10 ms 405000 A2s. Tvj = 125 ÌŠC; 8.3..10 ms 320000 A2s. di/dtcr Tvj = 125 ÌŠC 100 A/μs. tq Tvj = 125 ÌŠC 50..150 μs. IH Tvj = 25 ÌŠC typ/max. 150/500 mA. IL Tvj = 25 ÌŠC; RG =33Ω ; typ/max. 0.3/2 A V T Tvj = 25 ÌŠC ; IT ..  Tags:   datasheet abstract..	267.25 Kb	5 Pages	Original
	First line: Fast asymmetric thyristors EUPEC 314D3ET7 UPEC Type Vdrm Vdsm vDRM Vrrm (Vrrm(cj) Itrms 'tsm 'TAVM^C v(tc>) (di/dt)cr (dv/dt)cr RthJC Outline sin. 747-6 747-6 sinus A/|1S 1000 1200 1100 1300* (50) 2,45 30000 254/49 158/85 1000 0,117 1000 1200 1100 1300* (50) 36500 254/68 198/85 1000 0,117 Abstract: .. E s 20 D s 15 C = 500 F = 1000 2,7 300 0,053 125 12 A 518 S 600 1000 1200 800 1100 1300* 15 50 1500 9 405000 955/30 518/85 1,3 0,51 400 D < 15 C < 12 B < 10 A s 82 C = 500 F = 1000 2,7 300 0,04 125 13 A 618 S 600 1000 1200 ..  Tags:   datasheet abstract..	51.27 Kb	1 Pages	OCR Scan
	First line: EUPEC 3HD3ET7 Fast asymmetric thyristors Type Vdrm Vdsm vDRM Vrrm (Vrrm(C)) Itrms Itsm ^'.'j /i2dt Itavm^c sin. V(TO) 'vi (di/dt)cr 747-6 tq1) (dv/dt)cr 747-6 RthJC sinus Outline A/(1S V/|1S 1000 1200 1100 1300* (50) 2,45 30000 254/49 158/85 1000 0,117 1000 1200 1100 1300* (50) 36500 254/68 198/85 1 Abstract: .. < 15 C = 500 F = 1000 2,7 300 0,053 125 12 A 518 S 600 1000 1200 800 1100 1300* 15 50 1500 9 405000 955/30 518/85 1,3 0,51 400 D < 15 C < 12 B < 10 A < 82 C = 500 F = 1000 2,7 300 0,04 125 13 A 618 S 600 1000 1200 800 1100 ..  Tags:   datasheet abstract..	50.79 Kb	1 Pages	OCR Scan
	First line: 170M5813* 170m3818 170M5813 170M6812* 170M6811* Square Body 690V/700V (IEC/U.L.) Abstract: .. 700 60500 405000 95 170M5813 170M5813 . 500 14000 95000 95 170M6808 170M6808 . 550 19500 135000 100 170M6809 170M6809 . 630 31000 210000 105 170M6810 170M6810 . 3 700 44500 300000 110 170M6811 170M6811 1 1.15 17056320. 800 69500 465000 115 170M6812 170M6812 ..  Tags: 170M6812* 170M5813* microswitch bussmann  microswitch*  IPW60R041C6  190DTLB-PH1  170M6812  170M6811*  170M6809  170M5813  170m3818  170m*  17056314   datasheet abstract..	36.24 Kb	2 Pages	Original
	First line: d448 EUPEC BMDBET? 0DG1331 MUPEC Type Vrrm Vrsm VRRM Ifrmsm 'fsm Ifavm^c V(to) rnax RthJC sin. CC/W Outline 1200 1400 1600 7200 60/100 0,65 1200 1400 1600 1,43 10200 75/100 0,75 0,55 1200 1400 1800 31300 180/ 120/130 0,32 1200 1400 1800 26500 180/ 120/113 0,43 Abstract: .. 8,2 336000 955/ 66 720/100 0,84 0,6 0,0435 160 41 D 748 N 2000 2200 2400 2600 2800 1260 9 405000 800/ 94 750/100 0,8 0,55 0,044 160 33 D 749 N 3600 4000 4400 4800* 1500 10,5 551000 960/ 71 750/100 0,9 0,65 ..  Tags: d448   datasheet abstract..	68.03 Kb	1 Pages	OCR Scan
	First line: D452 EUPEC 34032^7 0001331 Type Vrrm Vrsm Vrrm Ifrmsm 'fsm /i2dt t'/j Ifavm^C V(T0) RthJC sin. Outline 1200 1400 1600 7200 60/100 0,65 1200 1400 1600 1,43 10200 75/100 0,75 0,55 1200 1400 1800 31300 180/ 120/130 0,32 1200 1400 1800 26500 180/ 120/113 0,43 2800 3200 3600 54500 225/ 150/100 1200 1400 Abstract: .. 8,2 336000 955/ 66 720/100 0,84 0,6 0,0435 160 41 D 748 N 2000 2200 2400 2600 2800 1260 9 405000 800/ 94 750/100 0,8 0,55 0,044 160 33 D 749 N 3600 4000 4400 4800* 1500 10,5 551000 960/ 71 750/100 0,9 0,65 ..  Tags: D452   datasheet abstract..	67.56 Kb	1 Pages	OCR Scan
	First line: D 400 /2200 E EUPEC 3403517 D0D011D UPEC T-OI-O Type VRRM FRMSM FAVM^C RthJC sin. Outline 1200 1400 1600 7200 60/100 0,65 1200 1400 1600 1,43 10200 75/100 0,75 0,55 1200 1400 1800 31300 180/ 120/130 0,32 Abstract: .. 7,75 300000 750/120 660/130 0,8 0,35 0,0555 180 40 D 748 N 2000 2200 2400 2600 2800 1260 9 405000 800/ 94 750/100 0,8 0,55 0,044 160 34 D 749 N 3600 4000 4400 4800* 1500 10,5 551000 960/ 71 750/100 0,9 0 ..  Tags: D 400 /2200 E   datasheet abstract..	96.18 Kb	2 Pages	OCR Scan
	First line: 0001721 IIXYS Diode Modules MDD250 iTAV 600-1600 Vmhi Version MDD260-06N1 MDD2S0-0SN1 Abstract: .. =45'C t = 10 ms 50Hz 50Hz 605000 AÂ »s Vr=0 t = 8.3 ms 60Hz 60Hz 560000 A*s T.jsT.ju t = 10ms 10ms 50Hz 50Hz 405000 A!s Vr=0 t = 8.3 ms 60Hz 60Hz 380000 A*s Tw -40..+150 Â °c 150 "C Tâ„ ¢ -40..+125 â– c VÂ «x 50Hz 50Hz , RMS t = 1 min ..  Tags:   datasheet abstract..	112.13 Kb	3 Pages	OCR Scan
	First line: semikron skt 760 tiristore* TIRIS* tiristores tiristor* SEHIKRON fil3bb71 DDD12DG 2.S-- Thyristors Thyristoren Thyristors "fypes Vrsm Vrhm Itoms Itav Itsm Vtptoj Vdbm (Tcase) "C; Idt/cr max. max. max. min. min. (It) V/|is 240/04D 5000 125000 Abstract: .. /14E 1500 1400 /16D,E 1700 1600 /18D,E 1900 1800 SKT 520/18E 1900 1800 1400 520 9000 405000 1000 2,0 1,2 0,55 360 1500 3 200 /20E 2100 2000 85 Â °C 1500A 1500A /22E 2300 2200 SKT 600/04 D 500 400 1400 600 ..  Tags: tiristor* tiristores TIRIS* tiristore* semikron skt 760   datasheet abstract..	117.61 Kb	2 Pages	OCR Scan
	First line: DD230S* Marketing Information 28,5 Abstract: .. Grenzlastintegral ∫I2 t-value tvj = 25 °C, t p = 10 ms ∫I2 t 405000 A2s. tvj = t vj max, tp = 10 ms 281000 A2s. Charakteristische Werte Characteristic values. Durchlaßspannung forward voltage tvj = t vj ..  Tags: DD230S*   datasheet abstract..	192.76 Kb	4 Pages	Original
	First line: STT253 Dimensions (1mm=0.0394") Type VRSM VDSM 1300 1500 1700 1900 VRRM VDRM 1200 1400 1600 1800 STT253GK08 STT253GK12 STT253GK14 STT253GK16 STT253GK18 Abstract: .. 405000 336000 320000 240000. A2s i2dt. di/dt cr. 250. 800. A/us. dv/dt cr TVJ=TVJM; VDR=2/3VDRM. RGK= ; method 1 linear voltage rise 1000 V/us. PGM. TVJ=TVJM tp=30us 30us . IT=ITAVM tp=500us 500us . 120 60. W. PGAV ..  Tags: THYRISTOR 300A   STT253 STT253GK08 STT253GK12 STT253GK14 STT253GK16 STT253GK18	250.48 Kb	4 Pages	Original
	First line: STD/SDT253 Dimensions (1mm=0.0394") VRSM VDSM STD/SDT253GK08 STD/SDT253GK12 1300 STD/SDT253GK14 1500 STD/SDT253GK16 1700 STD/SDT253GK18 1900 Type VRRM VDRM 1200 1400 1600 1800 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 TV Abstract: .. 405000 336000 320000 240000. A2s i2dt. di/dt cr. 250. 800. A/us. dv/dt cr TVJ=TVJM; VDR=2/3VDRM. RGK= ; method 1 linear voltage rise 1000 V/us. PGM. TVJ=TVJM tp=30us 30us . IT=ITAVM tp=500us 500us . 120 60. W. PGAV ..  Tags:   datasheet abstract..	259.74 Kb	4 Pages	Original
	First line: Marketing Information 28,5 Abstract: .. Grenzlastintegral ∫I2 t-value tvj = 25 °C, t p = 10 ms ∫I2 t 405000 A2s. tvj = t vj max, tp = 10 ms 281000 A2s. Charakteristische Werte Characteristic values. Durchlaßspannung forward voltage tvj = t vj ..  Tags:   datasheet abstract..	172.13 Kb	3 Pages	Original
	First line: Square Body 690V/700V (IEC/U.L.) Abstract: .. 2 700 60500 405000 95 170M5113 170M5113 170M5263 170M5263 2 1.26 17056318. 800 86000 575000 105 170M5114 170M5114 170M5264 170M5264 . 900 125000 840000 110 170M5115 170M5115 170M5265 170M5265 . 1000 180000 1250000 115 170M5116 170M5116 170M5266 170M5266 . 1100 245000 1600000 ..  Tags: microswitch bussmann  microswitch*  6950*  170M6111   datasheet abstract..	40.41 Kb	2 Pages	Original
	First line: Square Body French Style 690V/700V (IEC/U.L.) Abstract: .. 700 60500 405000 95 170M5313 170M5313 170M5363 170M5363 . 800 86000 575000 105 170M5314 170M5314 170M5364 170M5364 . 900 125000 840000 110 170M5315 170M5315 170M5365 170M5365 . 1000 180000 1250000 115 170M5316 170M5316 170M5366 170M5366 . 500 14000 95000 95 170M6308 170M6308 170M6358 170M6358 ..  Tags: microswitch bussmann  microswitch*  170M5360   datasheet abstract..	47.86 Kb	2 Pages	Original
	First line: 170m* 170M3017* Square Body 690V/700V (IEC/U.L.) Abstract: .. 2 700 60500 405000 95 170M5013 170M5013 170M5063 170M5063 170M5163 170M5163 170M5213 170M5213 2 1.20 17056318. 800 86000 575000 105 170M5014 170M5014 170M5064 170M5064 170M5164 170M5164 170M5214 170M5214 . 900 125000 840000 110 170M5015 170M5015 170M5065 170M5065 170M5165 170M5165 170M5215 170M5215 ..  Tags: 170M3017* microswitch bussmann  microswitch*  725000  170m4214  170M4159  170M3017  170m*   datasheet abstract..	41.27 Kb	2 Pages	Original
	First line: 170M6612* 170M5766* 170M5766 Square Body Style 690V/700V (IEC) Abstract: .. 2 700 60500 405000 95 170M5613 170M5613 170M5663 170M5663 170M5713 170M5713 170M5763 170M5763 1 0.630 17056318. 800 86000 575000 105 170M5614 170M5614 170M5664 170M5664 170M5714 170M5714 170M5764 170M5764 . 900 125000 840000 110 170M5615 170M5615 170M5665 170M5665 170M5715 170M5715 170M5765 170M5765 ..  Tags: 170M5766* 170M6612* microswitch bussmann  microswitch*  170M6610  170M5766   datasheet abstract..	46.82 Kb	2 Pages	Original
	First line: 170M6471* 170m3465* 170M4468 170m3468* 170M4417* Square Body Flush Contact 690V/700V (IEC/U.L.) Abstract: .. 2 700 60500 405000 95 170M5413 170M5413 170M5463 170M5463 170M5513 170M5513 170M5563 170M5563 6 3.30 17056318. 800 86000 575000 105 170M5414 170M5414 170M5464 170M5464 170M5514 170M5514 170M5564 170M5564 . 900 125000 840000 110 170M5415 170M5415 170M5465 170M5465 170M5515 170M5515 170M5565 170M5565 ..  Tags: 170m3468* 170M4468 170m3465* 170M6471* microswitch bussmann  microswitch*  170m6458  170M4564  170M4417*  170m3468  170m3465  170m*   datasheet abstract..	42.05 Kb	2 Pages	Original
	First line: 24.26 Abstract: .. Grenzlastintegral Tvj = 25 °C, tp = 10ms 10ms I2t 405000 A2s. Tvj = Tvj max, tp = 10ms 10ms 281250 A2s. Tvj = 25 °C, tp = 1ms 231125 A2s. I2t-value Tvj = Tvj max, tp = 1ms 160205 A2s. Charakteristische Werte / Characteristic ..  Tags: 2400 tfr  00457   datasheet abstract..	59.92 Kb	6 Pages	Original
	First line: fast switching thyristors OOArms thyristors rapides lOOAeff TtlOMSON-CSF Tamb >rm* Types vrrm vdrm VTTV|/ 'TM (mai di/dt (A/mS) vdrm (V/Ms) vrrm vdrm ima) Case Arms Tease 250A (B,Z,Y,A) (B,Z,Y,A) (B,Z,Y,A) (B,Z,Y,A) (B,Z,Y,A) (B,Z,Y,A) (B,Z,Y,A) (B,Z,Y,A) 1000 1200 1400 9000 1500 Arms 250A 1200 1 Abstract: .. = 405000. A2 · IT. = 250A 250A . 200. 400 446 600. 800 1000 1200 1400. 9000. 2,1. 1500. 3. 200. 800. 300. 35. Y. A -20 "" 25 Z =30 ..  Tags:   datasheet abstract..	92.71 Kb	1 Pages	OCR Scan
	First line: High Power Diode Modules MDD255 Type ibrt 1300 1500 1700 1900 1200 1400 1600 1800 255-12io1 255-14io1 255-16io1 255-18io1 Symbol Test Conditions Maximum Ratings 'frms 'favm "^VJ "^VJM sine 'fsm 9000 9600 "'"vj "'"vjM 7800 8600 Abstract: .. 9000 9600 7800 8600 405000 382000 304000 307000. t = 10 ms 50 Hz t = 8.3 ms 60 Hz TVJ = 45 °C VR = 0 t = 10 ms 50 Hz t = 8.3 ms 60 Hz t = 10 ms 50 Hz t = 8.3 ms 60 Hz Features International standard package ..  Tags:   datasheet abstract..	85.77 Kb	1 Pages	OCR Scan
	First line: Marketing Information Abstract: .. Grenzlastintegral I2 t-value tvj = 25 °C, tp = 10 ms I2 t 405000 A2s tvj = tvj max , tp = 10 ms 312050 A2s Kritische Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6, f= 50 ..  Tags:   datasheet abstract..	34.4 Kb	3 Pages	Original
	First line: CS 110 thyristor abb acs 550 td 1410 ABB ACS 800 ACS 085 ASEA BROWN/ABB SEMICON DOMflBOa T-2.5-0 Netzthyristoren Phase control thyristors Typ/type 226-04 226-06 226-08 226-12 226-14 226-16 Abstract: .. >1 CS 411-20 loi CS 411-23 io 1 CS 411-25 io 1* 1800 2000 2300 2500 1200 600/55 420 9000 8000 405000 320000 ACS 456-04 go 2 ACS 456-08 lo 2 ACS 456-10 lo 2 ACS 456-12 io 2 ACS 456-14 io 2 ACS 456-16 lo 2 400 800 ..  Tags: ACS 085 ABB ACS 800 td 1410 abb acs 550 CS 110 thyristor   datasheet abstract..	144.52 Kb	2 Pages	OCR Scan
	First line: 24.26 Abstract: .. Grenzlastintegral Tvj = 25 °C, tp = 10ms 10ms I2t 405000 A2s. Tvj = Tvj max, tp = 10ms 10ms 281250 A2s. Tvj = 25 °C, tp = 1ms 231125 A2s. I2t-value Tvj = Tvj max, tp = 1ms 160205 A2s. Charakteristische Werte / Characteristic ..  Tags:   datasheet abstract..	64.74 Kb	7 Pages	Original
	First line: Marketing Information 28,5 Abstract: .. Grenzlastintegral ∫I2 t-value tvj = 25 °C, t p = 10 ms ∫I2 t 405000 A2s. tvj = t vj max, tp = 10 ms 281000 A2s. Charakteristische Werte Characteristic values. Durchlaßspannung forward voltage tvj = t vj ..  Tags:   datasheet abstract..	181.43 Kb	4 Pages	Original
	First line: 24.26 Abstract: .. Grenzlastintegral Tvj = 25 °C, tp = 10ms 10ms I2t 405000 A2s. Tvj = Tvj max, tp = 10ms 10ms 281250 A2s. Tvj = 25 °C, tp = 1ms 231125 A2s. I2t-value Tvj = Tvj max, tp = 1ms 160205 A2s. Charakteristische Werte / Characteristic ..  Tags: 231125   datasheet abstract..	52.31 Kb	7 Pages	Original
	First line: t348Â T308 EUPEC 34035e!? 00DD1D3 UPEC Phase control thyristors FZS-OI Type Vdrm Vrrm 'trmsm Itsm /i2dt ITAVM/IC V(to) (di/dt)cr (dv/dt)cr R.hjc Outline sin. 747-6 typ. 747-6 sinus A/jxs V/ns 1000 1200 19/50 12/85 15.1 1000 1200 19/70 15/85 1000 1200 1400 1600 22/68 17/85 1000 Abstract: .. ,8 0,6 120 250 F = 1000 2 200 0,053 125 12 14 T 529 N 800 1000 1200 1400 1600 1800* 1250 9 405000 800/50 529/85 1 0,51 100 280 F = 1000 1,5 300 0,046 125 14 T 588 N T 589 N 600 800 1000 1200 1400 1600 1800* 1250 8 320000 ..  Tags: T308 t348Â   datasheet abstract..	179.14 Kb	3 Pages	OCR Scan
	First line: t308 EUPEC 34035^7 0QQ01D3 UPEC Phase control thyristors "PZS-OI Type Vdrm Vrrm 'trmsm 'tsm Itavm^C sin. tv,= (di/dt)cr 747-6 typ. (dv/dt)cr 747-6 R.hjc sinus Outline A/(iS T12N 1000 1200 19/50 12/85 15.1 1000 1200 19/70 15/85 1000 1200 1400 1600 22/68 17/85 1000 1000 1200 1400 1600 1300 25,5/8 Abstract: .. 0,6 120 250 F = 1000 2 200 0,053 125 12 14 â–  T 529 N 800 1000 1200 1400 1600 1800* 1250 9 405000 800/50 529/85 1 0,51 100 280 F = 1000 1,5 300 0,046 125 14 T 588 N T 589 N 600 800 1000 1200 1400 1600 1800* 1250 8 320000 ..  Tags: t308   datasheet abstract..	178.84 Kb	3 Pages	OCR Scan
	First line: EUPEC T529N Typenrelhe/Type range 34032^7 OOQG??1} IUPEC T529N 1100 Abstract: .. /i2dt-value tp = 10ms 10ms ,tV|<45 °C 550000 tp = 10ms 10ms , tVJ = tvj ma* 405000 di/dt cr Kritische Stromsteilheit critical rate of rise of on-state current nicht periodisch/non repetitive 500 dv ..  Tags:   datasheet abstract..	304.74 Kb	4 Pages	OCR Scan
	First line: SF500EX26* SF400U27 SF500U25 Vrsm Vrrm Itcav) Itsm di/dt Pgcav) Vgrm Igfm Tstg Irrm (50Hz) t=2-10ms (A2S) (mA) SF300Q13 1450 1200 300. 6000 180000 120# 1/2VDRM -40~ SF300R13 1500 1300 300. 6000 180000 1/2VDRM 3.00 -40-125 Abstract: .. # 1/2VDRM 20 0 4.00 5 0 4 0 125 -40~ 125 50 0 125 SF600B27 SF600B27 150 100 600.0 72 9000 405000 200 120# 1/2VDRM 20 0 4. 00 5 0 4 0 125 -40 — 125 35 0 125 SF600D27 SF600D27 ss 300 200 600.0 72 9000 405000 200 12 0 # 1/2VDRM 20 0 4. 00 ..  Tags: SF500U25 SF400U27 SF500EX26*   datasheet abstract..	2216.11 Kb	79 Pages	OCR Scan
	First line: Marconi high power button capsule DCR1004 MARCONI TECHNOLOGY 000175=1 J-Z5-20 CONVERTER Serlas tvp* Silicon Diameter Repetitive Voltages Available Mean On-state Currant 180* half slna Abstract: .. 40.0 49.0 40.0 I't A'a dl/dt A/us 54500 150000 157000 180000 281000 281000 451250 405000 625000 660000 1350000 720000 1350000 1800000 2205000 2880000 3645000 2420000 4210000 8000000 12000000 ..  Tags: Marconi high power button capsule DCR1004   datasheet abstract..	135.71 Kb	2 Pages	OCR Scan
	First line: MARCONI TECHNOLOGY 000173b High Power Button Capsule Thyristor DCR806 Series DCR807 Series IT(AV) 775A VRRM 2900V Type Non-Repetitive Repetitive Number Peak Voltages Peak Voltages Vqsm Vrsm Vorm Vrrm DCR806SM3030 DCR807SM3030 3000 2900 Abstract: .. A ♦ = 30 ° Tease = 55 °C IM I't for fusing 10mS 10mS half sine Tj = 125 °C 405000 A'sec 3mS half sine Tj = 125 °C 315000 A'sec Itsm Surge non-repetitive on-state current With 50% Vrsm Tj = 125 °C 9000 A dty/dl ..  Tags:   datasheet abstract..	241.23 Kb	4 Pages	OCR Scan
	First line: RECTIFIER DIODE 1000A 2500V MP03 Series MP03 Series Dual Diode Modules Replaces December 1998 version, DS5106-2.0 DS5106-3.0 January 2000 Abstract: .. 405000. 10ms 10ms half sine; Tj = 150 o C. 10ms 10ms half sine; Tj = 150 o C. Surge non-repetitive on-state ..  Tags: RECTIFIER DIODE 1000A 2500V   DS5106-2 DS5106-3	101.46 Kb	10 Pages	Original
	First line: fll3bb71 DD03SD0 SEMIKRON Vrsm Vrrm fdV) Itrms (maximum values continuous operation) Vdrm 1400 Itav (sin. 180; Tease DSC) V/(is 1900 1800 1000 520/18 2100 2000 1000 520/20 Abstract: .. 9000 A 8000 A 405000 A 2s 2 320000 A s typo 1 Ils typo 2 Ils 125 A/ Ils 150 mA/500 rnA 500 mAl2 A 100 .. 200 Ils 2,0 V 1,2 V 0,55 mQ 120 rnA 3V 200 rnA 0,25 V 10 rnA 0,Q38 °CIW 0,040/0,082 °CIW 0,045/0,093 ..  Tags:   datasheet abstract..	184.31 Kb	4 Pages	OCR Scan
	First line: SKT551* DDGBMTb SEMIKRON SEMIKRON Vrsm Vrrm Vdrm Itrms (maximum values continuous operation) 1000 1200 V/(is Itav (sin. 180; ;ase DSC) 491/04 491/08 1300 1200 1000 491/12 491/12 551/12 551/12 1500 1400 1000 491/14 551/14 1700 1600 1000 491/16 551/16 Abstract: .. 9000 A SOOOA 7000 A SOOOA 2 2 320000 A s 405000 A s 245000 A2s 320000 A 2s typo 1 Jls typo 1 Jls 125 AI JlS 150 mAl500 mAl500 mA 500 mAl2 A typo 50 ..: 150 JlS 2,1 V1,1 V 0,7mQ 50mA 50mA 1,65 V 0,925 V 0,45 mQ 50mA 50mA 19d IH IL ..  Tags: SKT551*   datasheet abstract..	223.42 Kb	4 Pages	OCR Scan
	First line: etz-Thyristor-Modul Phase Control Thyristor Module TZ310 Abstract: .. I2t 405000 320000 A2s A2s Kritische Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6 f = 50 Hz, iGM = 1,25 A, diG/dt = 1,25 A/μs diT/dt cr 120 A/μs Kritische Spannungssteilheit ..  Tags:   TZ310N	382.93 Kb	12 Pages	Original
	First line: KBC-350 170M3017* 170M3716 bussmann fuse 600 vdc 1000 amperes bussmann Fuse 170m2621 High Speed Fuses North American Style General Information Voltage Rating 130V AC/DC 150V AC/DC 250V AC/DC 500V AC/DC 600V 700V AC/DC 800V 1000V 700V 1000 4000 Amperes 1000 Amperes 2500 Amperes 1600 Amperes 1000 Ampe Abstract: .. 2 700 60500 405000 95. 800 86000 575000 105. 900 125000 840000 110. 1000 180000 1250000 115. 1100 245000 1600000 120. 1250 365000 2400000 130. 500 14000 95000 95. 550 19500 135000 100. 630 31000 210000 105 ..  Tags: bussmann Fuse 170m2621 bussmann fuse 600 vdc 1000 amperes 170M3716 170M3017* KBC-350 zilox Typower size 5  zilox*  microswitch bussmann  microswitch*  KBC-40  KBC-35  KAC-225  KAC-200  FWH-100B  FWH-010A6F*  FWC-32A10F   datasheet abstract..	369.83 Kb	34 Pages	Original
	First line: etz-Thyristor-Modul Phase Control Thyristor Module TT310 Abstract: .. 405000 A2s A2s Kritische Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6 f = 50 Hz, iGM = 1,25 A, diG/dt = 1,25 A/μs diT/dt cr 120 A/μs Kritische Spannungssteilheit ..  Tags:   TT310N	410.4 Kb	13 Pages	Original
	First line: UPC 494 Application Note Discrete power pHEMT Abstract: .. Rgd 349000 425000 405000 305000 366000 238000 Ω. Advance Product Information September 19, 2005. TriQuint Semiconductor Texas: Phone 972 994-8465 Fax 972 994-8504 Email: Info-mmw@tqs.com ..  Tags: UPC 494 Application Note TGF2021-08   datasheet abstract..	143.98 Kb	8 Pages	Original
	First line: Discrete power pHEMT Abstract: .. Rgd 349000 425000 405000 305000 366000 238000 Ω. Advance Product Information September 19, 2005. TriQuint Semiconductor Texas: Phone 972 994-8465 Fax 972 994-8504 Email: Info-mmw@tqs.com ..  Tags:   datasheet abstract..	122.74 Kb	8 Pages	Original
	First line: Discrete power pHEMT Abstract: .. Rgd 349000 425000 405000 305000 366000 238000 Ω. UPC = 1mm Unit pHEMT Cell. Gate. Source. Source. Drain. UPC. L - via = 0.0135 nH 2x Advance Product Information June 8, 2005. TriQuint Semiconductor Texas ..  Tags:   datasheet abstract..	166.51 Kb	8 Pages	Original
	First line: 426-49 Discrete power pHEMT Abstract: .. Rgd 349000 425000 405000 305000 366000 238000 Ω. Advance Product Information September 19, 2005. TriQuint Semiconductor Texas: Phone 972 994-8465 Fax 972 994-8504 Email: Info-mmw@tqs.com ..  Tags: 426-49   datasheet abstract..	122.05 Kb	8 Pages	Original
	First line: August 2007 Discrete power pHEMT Abstract: .. Rgd 349000 425000 405000 305000 366000 238000 Ω. Product Datasheet August 7, 2007. 5. TriQuint Semiconductor: Phone 972 994-8465 Fax 972 994-8504 Info-mmw@tqs.com www.triquint.com Rev - ..  Tags:   datasheet abstract..	126.5 Kb	8 Pages	Original
	First line: August 2007 Discrete power pHEMT Abstract: .. Rgd 349000 425000 405000 305000 366000 238000 Ω. Product Datasheet August 7, 2007. 5. TriQuint Semiconductor Texas: Phone 972 994-8465 Fax 972 994-8504 Info-mmw@tqs.com www.triquint.com ..  Tags:   datasheet abstract..	127.78 Kb	8 Pages	Original
	First line: August 2007 Discrete power pHEMT Abstract: .. Rgd 349000 425000 405000 305000 366000 238000 Ω. Product Datasheet August 7, 2007. 5. TriQuint Semiconductor: Phone 972 994-8465 Fax 972 994-8504 Info-mmw@tqs.com www.triquint.com Rev - ..  Tags:   datasheet abstract..	127.58 Kb	8 Pages	Original
	First line: August 2007 Discrete power pHEMT Abstract: .. Rgd 349000 425000 405000 305000 366000 238000 Ω. UPC = 1mm Unit pHEMT Cell. Gate. Source. Source. Drain. UPC. Unit pHEMT cell Reference Plane. L -. via = 0.0135 nH. 2x Product Datasheet August 7, 2007. 7. TriQuint ..  Tags:   datasheet abstract..	159.22 Kb	9 Pages	Original
	First line: SEMIKRCN 0001075 SEMiaiRDN Vrsm Ifav (sin. 180; Tease Vrrm 400/08 1000 SKN2M400/10 1200 400/12 600/12 Abstract: .. 9000 500 000 405000. 19 Qrr IRM IR. I. -~= 100~ 130 125 4 100 max. 2 1,95 1300 A 1,25 0,5. 470 210 10. IlC A ..  Tags:   datasheet abstract..	333.75 Kb	6 Pages	OCR Scan
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