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4001 1n diode

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Abstract: © 1N4005 1N4005 © 1N 4006 © 1N4007 1N4007 © 1N 4007 S 1N 4001 H 50 too ".200 400 " 600 . 800 1000 1300 1600 60 120 240 480 720 1 000 1 200 1 360 1600 1.0 50 - 65 do/to + 175 1.1 10 3 e Dobavljivo tudl v sistemu IS 9000 e , 240 480 720 1 000 1 200 1 500 1,5 50 - 65 do/to + 175 1,15 10 3 Silicijeve usmerjalne diode 2,5 A , 1300 250 450 650 850 1350 100 -40 do/to + 175 1.1 If=3A 20 5 1N 5400 © 1N5401 1N5401© 1N 5402 © 1N 5403 © 1N , /Flg. S 5 maks DO-27 DO-27 M""3477 0D0D"T5 3 5SE D Silicijeve usmerjalne diode 1A iM90^| Silicon ... OCR Scan
datasheet

1 pages,
50.44 Kb

1n 4007 diode diode 1n4003 diode IN 5402 RECTIFIER ISKRA ISKRA BY141 DIODE IN 5408 DO27 diode IN 5402 3A Iskra 11 250 251 1N 4001 diode diode 1N 4001 Diode 1N4005 silicon si diode 1N4007 datasheet abstract
datasheet frame
Abstract: Application 40 kHz Carrier + 9.0Vdc 1500µF (2) 1N914 1N914 + 12 Vdc + 455 kHz 1N 4001 10µF 100 MPS 6562 27 270 To Keyboard 100k 13 1.0k LED 150k 0.002 + 5.0 Vdc 1.0k 17 12 0.1 500 100 18 + 0.001 7 3 8 4 180k 2 16 220 , It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode , Complementary Detector Diode PIN CONNECTIONS Output 1 8 VCC Filter 2 7 Input Tank 3 6 Filter ... Original
datasheet

1 pages,
66.26 Kb

SFH206 IR remote control transmitter circuit MC14497 LITRONIX ir remote control circuit MC3373P ir diode remote control diode demodulation circuit ic 4001 4001 1n diode MC3373D IR REMOTE CONTROL IC ir emitter detector DIP package MC3373/D MC3373 MC3373/D abstract
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Abstract: ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION 1N 4001 50 1N 4002 100 1N 4003 200 1N 4004 400 1N 1N 1N 4005 4006 4007 600 800 1000 VRSM 60 120 240 480 720 1000 , DIODE AMMO PACK FE ED 6.0 ±1.0 52 ±2. .0 0 6.0 ±1.0 ±2.0 83.0 TAPES ±2 .0 , Telephone + 91-11-2579 6150 Fax + 91-11-2579 9569, 2579 5290 e-mail sales@cdil.com www.cdil.com ... Original
datasheet

3 pages,
43.82 Kb

1N 4002 diode j 4005 diode 1N 4004 diode 4007 DATA specification SHEET diode 1N 4001 diode 1N4001 and application notes 1n4001 power diode DIODE 1N4001 WORKING 1n4007 do-41 1n 4004 diode DIODE 1N4001 CDIL CHARACTERISTICS DIODE 1N4007 QSC/L-000019 QSC/L-000019 abstract
datasheet frame
Abstract: Symbol 1 1 1 Min 1 Max I Units 1 1 1 1 1 1. 1 1 Change in diode (capacitance 1(See 4.5.2) I I 4001 IVr = , SPECIFICATION SEMICONDUCTOR DEVICE, DIODE SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N4801A 1N4801A THROUGH 1N4815A 1N4815A AND , provided for each device type as specified 1n MIL-S-19500 MIL-S-19500. 1.2 Physical dimensions. See figure 1. 1.3 , Specification and Standards specified 1n the solicitation, form a extent specified herein. SPECIFICATION , ) and any pertinent data which may be of use 1n Improving this document should be addressed to ... OCR Scan
datasheet

11 pages,
592.51 Kb

1N4815B 1N4815A 1N4815 1N4808 1N4801B 1N4801A 4001 1n diode MIL-S-19500/329C SUPERSEDING---MIL-S-19500/329B MIL-S-19500 MIL-S-19500/329C abstract
datasheet frame
Abstract: broken lines is triggered. 1N 4001 2x BPY 64 blocking oscillator signal is mainly defined by the , LCD 1N 4001 n1 = 666 turns n2 = 333 turns 0.07 ECu L = 1.84 A basic requirement is an , + VS photo transistor thrystor circuit C1 The compensation of the linearity error of , photoflash capacitor, i.e. also available before the photoflashing occurs. Figure 4. + R3 550 k R1 , started. The diode D1 is turned off. Its voltage difference effects that a current flows via the resistor ... Original
datasheet

2 pages,
23.05 Kb

solar cell control ic AC121 photo conductive cells photo thyristor phototransistor "linear output" BPY64 germanium transistor blocking oscillator Phototransistor with base emitter disposable camera flash capacitor GERMANIUM phototransistor BPY64 abstract
datasheet frame
Abstract: ( IS=3.300E-019 300E-019 CJE=3.606F MJE=470M VJE=850M CJC=5.242F + MJC=400M VJC=650M BF=10K BR=816.121U TF=1N FC=900M , D a nd E S D STRUCTURES Q30 Q 31 V IN + I1 V IN - O utp ut B uffe r C ircuit M A X , 3761. VC C IN P K G IN D R V IN + R L1 V IN + C L1 C P 12 C P1 LP1 R P1 C1 Q27 IN R L2 V IN P , model. The bottom half of the ESD structure and the diode clamp on the output model have been commented , BF=246.294 BR=20 XTB=450M + VAF=29 VAR=3.500 NF=1.010 NR=1.020 NE=1.650 NC=1.560 IKF=77.028M + IKR=1.411M ... Original
datasheet

10 pages,
66.27 Kb

MAX3761 MAX3761 abstract
datasheet frame
Abstract: Capacitance (each diode) I 1 4001 1 IVr a 0; F . 1 MHz I ! Ct 1-1 2.0 1 PF 1 ¡Reverse recovery time 1 (each , diodes. These two diodes shall be shipped 1n a separate container (see 5.1.1). Two levels of product assurance are provided for each device type as specified 1n MIL-S-19500 MIL-S-19500. 1.2 Physical dimensions. See , Electrical character!sties, each diode. 1 ¡Limit 1 1 J i VF1 1Ir = 100 mA dC 1 ! j vF? 1 IF = 1 mA dc 1 Î i , dc oc < I_ * KJ » 50 V dc » ♦iso'c r_ VR , 0 f * 1 MHz ! + i / 1 I X/ I 1 Ip * 10 mA dc 1 1 IR « 10 ... OCR Scan
datasheet

13 pages,
626.02 Kb

1H4306 IC 4011 pin DETAIL 1N4306 datasheet abstract
datasheet frame
Abstract: excess o f 100/d7, a high current diode from input to output (1N 4001, etc.) w ill protect the ; froi , V ^ V 1N^ -2 5 V - 7 V ^ V IN^ -2 5 V , Tj=25 °C Line Regulation V rTM Line - 8 V ^ V in ^ - 18V , , Tj=25°C Line Regulation V Reg Line - 1 1 V ^ V 1N^ -2 1 V , Tj=25°C 80 mV 50 Load Regulation Vp , ) CHARACTERISTIC SYM BO L TEST CONDITION Tj=25 °C Output Voltage 5m A ^ I0 ^ 350m A , - 1 4 .5 V ^ V 1N^ - 2 7 V , -JA fC /W ) + 96.1 C i - 2 .2 |j F m + WL C 0 = 1jiF Ta $JC+ 0 C A -V , o in K JA 79X X ... OCR Scan
datasheet

9 pages,
17559.82 Kb

KIA79M KIA79M05F/PI/T79M15F/PI/T KIA79M abstract
datasheet frame
Abstract: UNIT Vcc U,5K SENSE I OUTPUT VCC R 2 I 15 K ALARM I OUTPUT 1N 4001 TX is Î! VZ LC Rc , possibility of disabling the power outputs. • Output current up to 2.5 A • Wide range of supply voltage : + 8 V to + 26 V • Can withstand overvoltages of as high as 60 V between Vqc ancl ground • Output , temperature range Toper -40 to +85 °C Junction temperature T, _. + 150 °C THERMAL CHARACTERISTICS , TDF1779A TDF1779A ELECTRICAL OPERATING CHARACTERISTICS Vqq = + 24 V, - 40°C < Tj < + 85°C (unless otherwise ... OCR Scan
datasheet

8 pages,
136.92 Kb

TDF1779ASP TDF1779A lem HA 1779A TDF1779A abstract
datasheet frame
Abstract: Application 40 kHz Carrier + 9.0Vdc 1500µF (2) 1N914 1N914 + 12 Vdc + 455 kHz 1N 4001 10µF 100 MPS 6562 27 270 To Keyboard 100k 13 1.0k LED 150k 0.002 + 5.0 Vdc 1.0k 17 12 0.1 500 100 18 + 0.001 7 3 8 4 180k 2 16 220 , It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode , Complementary Detector Diode PIN CONNECTIONS Output 1 8 VCC Filter 2 7 Input Tank 3 6 Filter ... Original
datasheet

6 pages,
161.21 Kb

motorola 1N914 diode MPS 6562 PC1373 ultrasonic transmitter nippon photo diode array amplifier r22 gas detectors ICs CANS-4612Z circuit diagram for simple IR receiver SFH206 LITRONIX 125 khz ultrasonic RECEIVER CIRCUIT MC3373D MC3373/D MC3373 MC3373/D abstract
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an actual "standard" 8-pin, single op amp package: * * CONNECTIONS: + - V+ V- O *.SUBCKT LT1078A LT1078A LT1078A LT1078A 3 2 Compensation nodes are listed after the first 5 connections: * * CONNECTIONS: + - V+ V- O CA CB *.SUBCKT LM101A LM101A LM101A LM101A in the + - V+ V- O * order, but the nodes are named 1-2-3-4-5. * * Several devices have unusual PNP IS=3.7926e-15 BF=48.7 XTB=-1.3209 + XTI=5.50008 .MODEL Q2 PNP IS=2.6367e-16 BF=48.7 XTB=-1.3209 +
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Allied Electronics 31/07/2001 4264.14 Kb DIC fulltext.dic