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4001 1n diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1N4004 1N4004 © 1N4005 1N4005 © 1N 4006 © 1N4007 1N4007 © 1N 4007 S 1N 4001 H 50 too ".200 400 " 600 . 800 1000 1300 1600 60 120 240 480 720 1 000 1 200 1 360 1600 1.0 50 - 65 do/to + 175 1.1 10 3 e Dobavljivo tudl v , 200 400 «00 800 1300 250 450 650 850 1350 100 —40 do/to + 175 1.1 If=3A 20 5 1N 5400 © 1N5401 1N5401 , |- Sl./Flg. S 5 maks DO-27 DO-27 MÔÔ3477 0D0DÔT5 3 5SE D Silicijeve usmerjalne diode 1A iM90 , standard IS-Q.43.02 Silicijeve usmerjalne diode 1,5 A Silicon rectifier diodes 1.5 A Tip/Type URRM ... OCR Scan
datasheet

1 pages,
50.44 Kb

BY141 RECTIFIER ISKRA DIODE IN 5408 DO27 Diode t 4302 ISKRA 1N 5404 diode 1N 4001 diode Diode 1N4005 silicon 4001 1n diode diode IN 5402 3A diode 1N 4001 Iskra 11 250 251 1N4007 iskra Diode IN 5404 si diode 1N4007 iskra diode TEXT
datasheet frame
Abstract: Application 40 kHz Carrier + 9.0Vdc 1500uF (2) 1N914 1N914 + 12 Vdc + 455 kHz 1N 4001 10uF 100 MPS 6562 27 270 To Keyboard 100k 13 1.0k LED 150k 0.002 + 5.0 Vdc 1.0k 17 12 0.1 500 100 18 + 0.001 7 3 8 4 180k 2 16 220 , . It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode , Complementary Detector Diode PIN CONNECTIONS Output 1 8 VCC Filter 2 7 Input Tank 3 6 Filter ... Motorola
Original
datasheet

1 pages,
66.26 Kb

ir remote control circuit amplifier ir application circuit ic 4001 MLED81 diode 1N 4001 ir diode remote control diode demodulation circuit 4001 1n diode IR REMOTE CONTROL IC MC3373D 1N 4001 diode ir emitter detector DIP package MC3373/D MC3373 1n914 detector diode MC3373/D MC3373 MC3373P MC3373/D MC3373 envelope detector ic MC3373/D MC3373 motorola 1N914 diode datasheet MC3373/D MC3373 MRD821 MC3373/D MC3373 upC1373 MC3373/D MC3373 motorola 1N914 diode MC3373/D MC3373 ir receiver diode MC3373/D MC3373 MC3373/D MC3373/D MC3373 MC3373 TEXT
datasheet frame
Abstract: 1n the zone between .050 and 1.00 Inch from the diode body. Outside this zone the lead diameter is , +145°C + 5°C, -0°C, minimum, for 172 hours, minimum. b. Five exposure cycles 1n accordance with , in diode (capacitance 1(See 4.5.2) I I 4001 IVr = 4 V dc 1 1 aC 1 1 | 1 1 1 1 *5% of initial 1 1 , SPECIFICATION SEMICONDUCTOR DEVICE, DIODE SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N4801A 1N4801A THROUGH 1N4815A 1N4815A AND , provided for each device type as specified 1n MIL-S-19500 MIL-S-19500. 1.2 Physical dimensions. See figure 1. 1.3 ... OCR Scan
datasheet

11 pages,
592.51 Kb

1N4815B 1N4815A 1N4815 1N4808 1N4801B 1N4801A 4001 1n diode MIL-S-19500/329C MIL-S-19500/329B TEXT
datasheet frame
Abstract: specified peak voltage impressed across the diode 1n the reverse direction followed by a' half-slne wave , SUPLRSEDING- MIL-S-19500/226A MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM , detail-requirements for a germanium semiconductor diode. Three levels of product assurance are provided for each , electrical characteristics. The diode should have salient characteristics at ambient temperature of ♦25  , be of use 1n Improving this document should be addressed to: Commander, Defense Electronics I Supply ... OCR Scan
datasheet

10 pages,
257.31 Kb

00D0125 MIL-S-19500/226B MIL-S-19500/226A TEXT
datasheet frame
Abstract: Capacitance (each diode) I 1 4001 1 IVr a 0; F . 1 MHz I ! Ct 1-1 2.0 1 PF 1 ¡Reverse recovery time 1 , matched diodes. These two diodes shall be shipped 1n a separate container (see 5.1.1). Two levels of product assurance are provided for each device type as specified 1n MIL-S-19500 MIL-S-19500. 1.2 Physical dimensions , 5961 MÏL-S-1950Q/278E L-S-1950Q/278E 1.4 Electrical character!sties, each diode. 1 ¡Limit 1 1 J i VF1 1Ir = 100 , * 1 MHz ! + i / 1 I X/ I 1 Ip * 10 mA dc 1 1 IR « 10 mA dc 1 ¡Recovery to IR - 1 mA dc I 1 1 I 1 1 ... OCR Scan
datasheet

13 pages,
626.02 Kb

diode 1N 4001 IC 4011 pin DETAIL 1H4306 1N4306 MIL-S-19500/278E TEXT
datasheet frame
Abstract: broken lines is triggered. 1N 4001 2x BPY 64 blocking oscillator signal is mainly defined by the , . LCD 1N 4001 n1 = 666 turns n2 = 333 turns 0.07 ECu L = 1.84 A basic requirement is an , + VS photo transistor thrystor circuit C1 The compensation of the linearity error of , photoflash capacitor, i.e. also available before the photoflashing occurs. Figure 4. + R3 550 k R1 , started. The diode D1 is turned off. Its voltage difference effects that a current flows via the resistor ... Siemens
Original
datasheet

2 pages,
23.05 Kb

solar cell control ic AC121 germanium transistor phototransistor "linear output" photo thyristor photo conductive cells AC121 BPY64 germanium transistor blocking oscillator Phototransistor with base emitter disposable camera flash capacitor GERMANIUM phototransistor TEXT
datasheet frame
Abstract: UMZ5.1N Diodes Zener diode UMZ5.1N Applications Voltage regulation (common anode dual chips) Land size figure Dimensions (Unit : mm) 1.3 0.65 0.3±0.1 0.9MIN. Each lead has same , 0.3±0.1 0.5±0.05 4.0±0.1 2.4±0.1 8.0±0.2 00.1 2.4±0.1 2.25±0.1 0 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.25±0.1 Absolute maximum ratings (Ta=25°C) Parameter Power , - - 2.0 uA Conditions IZ=5mA VR=1.5V 1/2 UMZ5.1N Diodes Electrical ... ROHM
Original
datasheet

3 pages,
131.63 Kb

TEXT
datasheet frame
Abstract: ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION 1N 4001 50 1N 4002 100 1N 4003 200 1N 4004 400 1N 1N 1N 4005 4006 4007 600 800 1000 VRSM 60 120 240 480 720 1000 , dimensions are in mm. LEADER DIODE AMMO PACK FE ED 6.0 ±1.0 52 ±2. .0 0 6.0 ±1.0 , Delhi 110 028, India. Telephone + 91-11-2579 6150 Fax + 91-11-2579 9569, 2579 5290 e-mail ... Continental Device India
Original
datasheet

3 pages,
43.82 Kb

working of 1N 4007 DIODE diode 1N 4001 diode 1N4001 and application notes j 4005 1n4007 do-41 1n4001 power diode 1n 4004 diode diode 1N 4004 DIODE 1N4001 CDIL DIODE 1N4001 WORKING CHARACTERISTICS DIODE 1N4007 diode 4007 DATA specification SHEET QSC/L-000019 DIODE GR 1N4001 QSC/L-000019 free 1N4007 QSC/L-000019 1n4007 cdil QSC/L-000019 diode 1N 4002 QSC/L-000019 1n4007 cdil diode QSC/L-000019 diode 1N4001 specifications QSC/L-000019 1N4007 DO-41 package CDIL QSC/L-000019 free diode 1n4001 QSC/L-000019 QSC/L-000019 QSC/L-000019 TEXT
datasheet frame
Abstract: resistance (NOTE 2) Operating junction and storage temperature range SYMBOLS 1N 4001 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 UNITS VRRM VRMS VDC 50 35 50 , t,PULSE DURATION,sec. 100 KD Diode ... KD Diode
Original
datasheet

2 pages,
589.35 Kb

1N4001 1N4007 TEXT
datasheet frame
Abstract: Voltage 1N 4001 VRRM VRWM VR Characteristic 35 70 140 280 420 560 700 , ® 1N4001 1N4001 – 1N4007 1N4007 1.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High , %. Symbol RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit 50 100 200 400 600 800 ... Won-Top Electronics
Original
datasheet

4 pages,
39.33 Kb

1N400x 1N4001 1N4007 TEXT
datasheet frame

Archived Files

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an actual "standard" 8-pin, single op amp package: * * CONNECTIONS: + - V+ V- O *.SUBCKT LT1078A LT1078A 3 2 Compensation nodes are listed after the first 5 connections: * * CONNECTIONS: + - V+ V- O CA CB *.SUBCKT LM101A LM101A in the + - V+ V- O * order, but the nodes are named 1-2-3-4-5. * * Several devices have unusual PNP IS=3.7926e-15 BF=48.7 XTB=-1.3209 + XTI=5.50008 .MODEL Q2 PNP IS=2.6367e-16 BF=48.7 XTB=-1.3209 +
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