500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
BQ24001PWPR Texas Instruments Linear 1-cell Li-Ion Battery Charger w/Integrated FET, One LED 20-HTSSOP 0 to 70 visit Texas Instruments
BQ24001RGWR Texas Instruments Linear 1-cell Li-Ion Battery Charger w/Integrated FET, One LED 20-VQFN -40 to 70 visit Texas Instruments Buy
BQ24001RGWRG4 Texas Instruments Linear 1-cell Li-Ion Battery Charger w/Integrated FET, One LED 20-VQFN -40 to 70 visit Texas Instruments
BQ24001PWP Texas Instruments Linear 1-cell Li-Ion Battery Charger w/Integrated FET, One LED 20-HTSSOP 0 to 70 visit Texas Instruments Buy
BQ24001PWPG4 Texas Instruments Linear 1-cell Li-Ion Battery Charger w/Integrated FET, One LED 20-HTSSOP 0 to 70 visit Texas Instruments
X40010S8-BT1 Intersil Corporation 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8, PLASTIC, SOIC-8 visit Intersil

4001 1n diode

Catalog Datasheet MFG & Type PDF Document Tags

iskra diode

Abstract: BY144 1N4004 © 1N4005 © 1N 4006 © 1N4007 © 1N 4007 S 1N 4001 H 50 too ".200 400 " 600 . 800 1000 1300 1600 60 120 240 480 720 1 000 1 200 1 360 1600 1.0 50 - 65 do/to + 175 1.1 10 3 e Dobavljivo tudl v , 200 400 «00 800 1300 250 450 650 850 1350 100 â'"40 do/to + 175 1.1 If=3A 20 5 1N 5400 © 1N5401 , |- Sl./Flg. S 5 maks DO-27 MÃ"Ã"3477 0D0DÃ"T5 3 5SE D Silicijeve usmerjalne diode 1A iM90 , standard IS-Q.43.02 Silicijeve usmerjalne diode 1,5 A Silicon rectifier diodes 1.5 A Tip/Type URRM
-
OCR Scan
iskra diode BY144 BY142 si diode 1N4007 BY143 Diode IN 5404 DO-41 1N4001 1N4002 1N4003 1N5406

ir receiver diode

Abstract: MC3373P Application 40 kHz Carrier + 9.0Vdc 1500µF (2) 1N914 + 12 Vdc + 455 kHz 1N 4001 10µF 100 MPS 6562 27 270 To Keyboard 100k 13 1.0k LED 150k 0.002 + 5.0 Vdc 1.0k 17 12 0.1 500 100 18 + 0.001 7 3 8 4 180k 2 16 220 , . It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode , Complementary Detector Diode PIN CONNECTIONS Output 1 8 VCC Filter 2 7 Input Tank 3 6 Filter
Motorola
Original
MLED81 MRD821 MC3373P MC3373D MLED71 ir receiver diode motorola 1N914 diode upC1373 motorola 1N914 diode datasheet MC3373/D MC3373 PC1373 MC14497

4001 1n diode

Abstract: 1N4815 1n the zone between .050 and 1.00 Inch from the diode body. Outside this zone the lead diameter is , +145°C + 5°C, -0°C, minimum, for 172 hours, minimum. b. Five exposure cycles 1n accordance with , in diode (capacitance 1(See 4.5.2) I I 4001 IVr = 4 V dc 1 1 aC 1 1 | 1 1 1 1 *5% of initial 1 1 , SPECIFICATION SEMICONDUCTOR DEVICE, DIODE SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N4801A THROUGH 1N4815A AND , provided for each device type as specified 1n MIL-S-19500. 1.2 Physical dimensions. See figure 1. 1.3
-
OCR Scan
1N4801B 1N4815B 4001 1n diode 1N4815 1N4808 MIL-S-19500/329C MIL-S-19500/329B

GERMANIUM phototransistor

Abstract: disposable camera flash capacitor broken lines is triggered. 1N 4001 2x BPY 64 blocking oscillator signal is mainly defined by the , . LCD 1N 4001 n1 = 666 turns n2 = 333 turns 0.07 ECu L = 1.84 A basic requirement is an , + VS photo transistor thrystor circuit C1 The compensation of the linearity error of , photoflash capacitor, i.e. also available before the photoflashing occurs. Figure 4. + R3 550 k R1 , started. The diode D1 is turned off. Its voltage difference effects that a current flows via the resistor
Siemens
Original
BPY64 GERMANIUM phototransistor disposable camera flash capacitor Phototransistor with base emitter blocking oscillator germanium transistor

free diode 1n4001

Abstract: 1N4007 DO-41 package CDIL ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION 1N 4001 50 1N 4002 100 1N 4003 200 1N 4004 400 1N 1N 1N 4005 4006 4007 600 800 1000 VRSM 60 120 240 480 720 1000 , dimensions are in mm. LEADER DIODE AMMO PACK FE ED 6.0 ±1.0 52 ±2. .0 0 6.0 ±1.0 , Delhi 110 028, India. Telephone + 91-11-2579 6150 Fax + 91-11-2579 9569, 2579 5290 e-mail
Continental Device India
Original
free diode 1n4001 1N4007 DO-41 package CDIL diode 1N4001 specifications 1n4007 cdil diode diode 1N 4002 1n4007 cdil QSC/L-000019 C-120 1N4007R 030103E

Scans-0016000

Abstract: specified peak voltage impressed across the diode 1n the reverse direction followed by a' half-slne wave , SUPLRSEDING- MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM , detail-requirements for a germanium semiconductor diode. Three levels of product assurance are provided for each , electrical characteristics. The diode should have salient characteristics at ambient temperature of ♦25  , be of use 1n Improving this document should be addressed to: Commander, Defense Electronics I Supply
-
OCR Scan
Scans-0016000 00D0125 MIL-S-19500/226B 1N3666U HIL-S-135M HIL-S-19500/226B S961-1161-1

1N4306

Abstract: IC 4011 pin DETAIL Capacitance (each diode) I 1 4001 1 IVr a 0; F . 1 MHz I ! Ct 1-1 2.0 1 PF 1 ¡Reverse recovery time 1 , matched diodes. These two diodes shall be shipped 1n a separate container (see 5.1.1). Two levels of product assurance are provided for each device type as specified 1n MIL-S-19500. 1.2 Physical dimensions , 5961 MÏL-S-1950Q/278E 1.4 Electrical character!sties, each diode. 1 ¡Limit 1 1 J i VF1 1Ir = 100 , * 1 MHz ! + i / 1 I X/ I 1 Ip * 10 mA dc 1 1 IR « 10 mA dc 1 ¡Recovery to IR - 1 mA dc I 1 1 I 1 1
-
OCR Scan
1N4306 IC 4011 pin DETAIL 1H4306 diode 1N 4001 MIL-S-19500/278E MIL-S-195OO/270D 1N4306H 1N4306M 9500/278E
Abstract: UMZ5.1N Diodes Zener diode UMZ5.1N Applications Voltage regulation (common anode dual chips) Land size figure Dimensions (Unit : mm) 1.3 0.65 0.3±0.1 0.9MIN. Each lead has same , 0.3±0.1 0.5±0.05 4.0±0.1 2.4±0.1 8.0±0.2 00.1 2.4±0.1 2.25±0.1 0 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.25±0.1 Absolute maximum ratings (Ta=25°C) Parameter Power , - - 2.0 µA Conditions IZ=5mA VR=1.5V 1/2 UMZ5.1N Diodes Electrical ROHM
Original
SC-70

1N4007

Abstract: 1N4001 resistance (NOTE 2) Operating junction and storage temperature range SYMBOLS 1N 4001 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 UNITS VRRM VRMS VDC 50 35 50 , t,PULSE DURATION,sec. 100 KD Diode
KD Diode
Original
MIL-STD-750

1N400x

Abstract: Voltage 1N 4001 VRRM VRWM VR Characteristic 35 70 140 280 420 560 700 , ® 1N4001 â'" 1N4007 1.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High , %. Symbol RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit 50 100 200 400 600 800
Won-Top Electronics
Original
1N400x MIL-STD-202 1N400 5000/T 1N4001-TB-LF

diode 1N4001 specifications

Abstract: Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1N 4001 VRRM VRWM VR , 1N4001 â'" 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO , Output Current (Note 1) @TA = 75°C 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N
Won-Top Electronics
Original
1N4006-T3 1N4006-TB 1N4006 1N4007-T3 1N4007-TB
Abstract: current by 20%. Symbol RMS Reverse Voltage 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit 50 100 200 400 600 800 1000 V VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1N 4001 VRRM VRWM VR , 1N4001 â'" 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Won-Top Electronics
Original

diode 1N4001 specifications

Abstract: CHARACTERISTICS DIODE 1N4007 Voltage DC Blocking Voltage 1N 4001 VRRM VRWM VR Characteristic 35 70 140 280 , 1N4001 ­ 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads , °C 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit 50 100 200
Won-Top Electronics
Original
CHARACTERISTICS DIODE 1N4007 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 1N4001 DIODE SPECIFICATIONS

k 2101 equivalent

Abstract: PNP( IS=1.320E-018 CJE=14.423F MJE=470M VJE=850M CJC=17.586F + MJC=400M VJC=650M BF=10K BR=746.167U TF=1N , ( IS=1.968E-018 CJE=21.929F MJE=470M VJE=850M CJC=21.582F + MJC=400M VJC=650M BF=10K BR=809.067U TF=1N , =3.300E-019 CJE=3.606F MJE=470M VJE=850M CJC=5.242F + MJC=400M VJC=650M BF=10K BR=816.121U TF=1N FC=900M ) .ENDS , A D a nd E S D STRUCTURES Q30 Q 31 V IN + I1 V IN - O utp ut B uffe r C ircuit M A X , 3761. VC C IN P K G IN D R V IN + R L1 V IN + C L1 C P 12 C P1 LP1 R P1 C1 Q27 IN R L2 V IN P
-
Original
k 2101 equivalent MAX3761 H11M032 117E-018 420E-021 112E-030 HDE072021
Abstract: 5 ° C 1 N 4001 1N4002 1N 4003 1N4004 1N4005 1N4006 1N4007 V r â'" M ax. D C Blockin g , Ratings and Characteristics 1N4001 â  Econom ical 1 ampere general purpose diode for industrial , STYLE AND DIMENSIONS + 5.2 (0.205) MAX. 0.86(0.034) MAX. D IA .' Ã' 2.7 (0.107) MAX , * 1000* 35 70 140 280 4 20 560 7 00 ELECTRICAL SPECIFICATIONS 1N 4 00 1 I f (A V ) M a x -
OCR Scan
1N4D01 S54SE 1000G 0004C

79m15f

Abstract: excess o f 100/d7, a high current diode from input to output (1N 4001, etc.) w ill protect the ; froi , V ^ V 1N^ -2 5 V - 7 V ^ V IN^ -2 5 V , Tj=25 °C Line Regulation V rTM Line - 8 V ^ V in ^ - 18V, Tj , =25°C Line Regulation V Reg Line - 1 1 V ^ V 1N^ -2 1 V , Tj=25°C 80 mV 50 Load Regulation Vp , ) CHARACTERISTIC SYM BO L TEST CONDITION Tj=25 °C Output Voltage 5m A ^ I0 ^ 350m A , - 1 4 .5 V ^ V 1N^ - 2 7 V , ÖJA fC /W ) + 96.1 C i - 2 .2 |j F m + WL C 0 = 1jiF Ta $JC+ 0 C A -V , o in K JA 79X X
-
OCR Scan
79m15f KIA79M KIA79M05F/PI/T79M15F/PI/T K1A79M 05F/PI/T 08F/PI/T 12F/PI/T

4026 IC

Abstract: IR411 SUPERSEDING- MIL-S-19500/192A 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM , requirements for a germanium semiconductor diode. Three levels of product assurance are provided for each device type as specified 1n MIL-S-19500. 1.2 Physical dimensions. See figure 1 (DO-7). 1.3 Maximum , Primary electrical characteristics. The diode shall have salient characteristics at ambient temperature of , , additions, deletions) and any pertinent data which may be lof use 1n Improving this document should be
-
OCR Scan
1N276 4026 IC IR411 ci 4081 CI 4016 in276 GDDG15S MIL-S-19500/192B

1779A

Abstract: lem HA UNIT Vcc U,5K SENSE I OUTPUT VCC R 2 I 15 K ALARM I OUTPUT 1N 4001 TX is Ã! VZ LC Rc , : + 8 V to + 26 V â'¢ Can withstand overvoltages of as high as 60 V between Vqc ancl ground â , temperature range Toper -40 to +85 °C Junction temperature T, _. + 150 °C THERMAL CHARACTERISTICS , TDF1779A ELECTRICAL OPERATING CHARACTERISTICS Vqq = + 24 V, - 40°C < Tj < + 85°C (unless otherwise , V Logic input threshold (pin 5) V| - 0 8 V High level input current (pins 7, 10, 11) VI = + 2 V
-
OCR Scan
TDF1779ASP 1779A lem HA CB-500
Abstract: -0.65 4-2.8 + 0 .1 Unit : mm 4.0±0.1 >l d +l 05 c\j , LO CO o io CD o LO CD Ö I 1 I 1 1 8 , Voltage Input Diode Current Output Diode Current DC Output Current DC V (x / G ro u n d Current Power , 961001EBA2 - 0 .5 ~ V CC + 0.5 - 0 .5 ~ V c c + 0.5 ±20 ± 20 ±35 ±37.5 300 -65-150 260 PIM A Q Ç I f î , 1N 1 ju A ICC - - - , ithout load. Average operating current can be obtained by the equation : lCC(opr) = CpD`Vcc*f IN + l c c -
OCR Scan
TC7W241 TC7W241FU

MC3373P

Abstract: MC3373 Application 40 kHz Carrier + 9.0Vdc 1500µF (2) 1N914 + 12 Vdc + 455 kHz 1N 4001 10µF 100 MPS 6562 27 270 To Keyboard 100k 13 1.0k LED 150k 0.002 + 5.0 Vdc 1.0k 17 12 0.1 500 100 18 + 0.001 7 3 8 4 180k 2 16 220 , . It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode , Complementary Detector Diode PIN CONNECTIONS Output 1 8 VCC Filter 2 7 Input Tank 3 6 Filter
Motorola
Original
MC1449 IR decoder SO8 IR REMOTE CONTROL IC CANS-4612Z IR 5M receiver circuit diagram for simple IR receiver
Showing first 20 results.