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CD4001BPWRE4 Texas Instruments 4000/14000/40000 SERIES, QUAD 2-INPUT NOR GATE, PDSO14, GREEN, PLASTIC. TSSOP-14
CD4001BMTE4 Texas Instruments 4000/14000/40000 SERIES, QUAD 2-INPUT NOR GATE, PDSO14, GREEN, PLASTIC, SOIC-14
CD4001BME4 Texas Instruments 4000/14000/40000 SERIES, QUAD 2-INPUT NOR GATE, PDSO14, GREEN, PLASTIC, SOIC-14
CD4001BNSRE4 Texas Instruments 4000/14000/40000 SERIES, QUAD 2-INPUT NOR GATE, PDSO14, GREEN, PLASTIC, SOP-14
CD4001BPWE4 Texas Instruments 4000/14000/40000 SERIES, QUAD 2-INPUT NOR GATE, PDSO14, GREEN, PLASTIC. TSSOP-14
CD4001BPWRG4 Texas Instruments CMOS Quad 2-Input NOR Gate 14-TSSOP -55 to 125

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4001 1n diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1N4004 © 1N4005 © 1N 4006 © 1N4007 © 1N 4007 S 1N 4001 H 50 too ".200 400 " 600 . 800 1000 1300 1600 60 120 240 480 720 1 000 1 200 1 360 1600 1.0 50 - 65 do/to + 175 1.1 10 3 e Dobavljivo tudl v , 200 400 «00 800 1300 250 450 650 850 1350 100 â'"40 do/to + 175 1.1 If=3A 20 5 1N 5400 © 1N5401 , |- Sl./Flg. S 5 maks DO-27 MÃ"Ã"3477 0D0DÃ"T5 3 5SE D Silicijeve usmerjalne diode 1A iM90 , standard IS-Q.43.02 Silicijeve usmerjalne diode 1,5 A Silicon rectifier diodes 1.5 A Tip/Type URRM -
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iskra diode si diode 1N4007 Diode IN 5404 1N4007 iskra Iskra 11 250 251 diode 1N 4001 DO-41 1N4001 1N4002 1N4003 1N5406
Abstract: Application 40 kHz Carrier + 9.0Vdc 1500uF (2) 1N914 + 12 Vdc + 455 kHz 1N 4001 10uF 100 MPS 6562 27 270 To Keyboard 100k 13 1.0k LED 150k 0.002 + 5.0 Vdc 1.0k 17 12 0.1 500 100 18 + 0.001 7 3 8 4 180k 2 16 220 , . It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode , Complementary Detector Diode PIN CONNECTIONS Output 1 8 VCC Filter 2 7 Input Tank 3 6 Filter Motorola
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MLED81 MRD821 MC3373P MC3373D MLED71 ir receiver diode motorola 1N914 diode upC1373 motorola 1N914 diode datasheet MC3373/D MC3373 PC1373 MC14497
Abstract: 1n the zone between .050 and 1.00 Inch from the diode body. Outside this zone the lead diameter is , +145°C + 5°C, -0°C, minimum, for 172 hours, minimum. b. Five exposure cycles 1n accordance with , in diode (capacitance 1(See 4.5.2) I I 4001 IVr = 4 V dc 1 1 aC 1 1 | 1 1 1 1 *5% of initial 1 1 , SPECIFICATION SEMICONDUCTOR DEVICE, DIODE SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N4801A THROUGH 1N4815A AND , provided for each device type as specified 1n MIL-S-19500. 1.2 Physical dimensions. See figure 1. 1.3 -
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1N4801B 1N4815B 4001 1n diode 1N4808 1N4815 MIL-S-19500/329C MIL-S-19500/329B
Abstract: broken lines is triggered. 1N 4001 2x BPY 64 blocking oscillator signal is mainly defined by the , . LCD 1N 4001 n1 = 666 turns n2 = 333 turns 0.07 ECu L = 1.84 A basic requirement is an , + VS photo transistor thrystor circuit C1 The compensation of the linearity error of , photoflash capacitor, i.e. also available before the photoflashing occurs. Figure 4. + R3 550 k R1 , started. The diode D1 is turned off. Its voltage difference effects that a current flows via the resistor Siemens
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BPY64 GERMANIUM phototransistor disposable camera flash capacitor Phototransistor with base emitter blocking oscillator germanium transistor
Abstract: ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION 1N 4001 50 1N 4002 100 1N 4003 200 1N 4004 400 1N 1N 1N 4005 4006 4007 600 800 1000 VRSM 60 120 240 480 720 1000 , dimensions are in mm. LEADER DIODE AMMO PACK FE ED 6.0 ±1.0 52 ±2. .0 0 6.0 ±1.0 , Delhi 110 028, India. Telephone + 91-11-2579 6150 Fax + 91-11-2579 9569, 2579 5290 e-mail Continental Device India
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free diode 1n4001 1N4007 DO-41 package CDIL diode 1N4001 specifications 1n4007 cdil diode diode 1N 4002 1n4007 cdil QSC/L-000019 C-120 1N4007R 030103E
Abstract: specified peak voltage impressed across the diode 1n the reverse direction followed by a' half-slne wave , SUPLRSEDING- MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM , detail-requirements for a germanium semiconductor diode. Three levels of product assurance are provided for each , electrical characteristics. The diode should have salient characteristics at ambient temperature of ♦25  , be of use 1n Improving this document should be addressed to: Commander, Defense Electronics I Supply -
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00D0125 MIL-S-19500/226B 1N3666U HIL-S-135M HIL-S-19500/226B S961-1161-1
Abstract: Capacitance (each diode) I 1 4001 1 IVr a 0; F . 1 MHz I ! Ct 1-1 2.0 1 PF 1 ¡Reverse recovery time 1 , matched diodes. These two diodes shall be shipped 1n a separate container (see 5.1.1). Two levels of product assurance are provided for each device type as specified 1n MIL-S-19500. 1.2 Physical dimensions , 5961 MÏL-S-1950Q/278E 1.4 Electrical character!sties, each diode. 1 ¡Limit 1 1 J i VF1 1Ir = 100 , * 1 MHz ! + i / 1 I X/ I 1 Ip * 10 mA dc 1 1 IR « 10 mA dc 1 ¡Recovery to IR - 1 mA dc I 1 1 I 1 1 -
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1N4306 1H4306 IC 4011 pin DETAIL MIL-S-19500/278E MIL-S-195OO/270D 1N4306H 1N4306M 9500/278E
Abstract: UMZ5.1N Diodes Zener diode UMZ5.1N Applications Voltage regulation (common anode dual chips) Land size figure Dimensions (Unit : mm) 1.3 0.65 0.3±0.1 0.9MIN. Each lead has same , 0.3±0.1 0.5±0.05 4.0±0.1 2.4±0.1 8.0±0.2 00.1 2.4±0.1 2.25±0.1 0 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.25±0.1 Absolute maximum ratings (Ta=25°C) Parameter Power , - - 2.0 uA Conditions IZ=5mA VR=1.5V 1/2 UMZ5.1N Diodes Electrical ROHM
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SC-70
Abstract: resistance (NOTE 2) Operating junction and storage temperature range SYMBOLS 1N 4001 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 UNITS VRRM VRMS VDC 50 35 50 , t,PULSE DURATION,sec. 100 KD Diode KD Diode
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MIL-STD-750
Abstract: Voltage 1N 4001 VRRM VRWM VR Characteristic 35 70 140 280 420 560 700 , ® 1N4001 â'" 1N4007 1.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High , %. Symbol RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit 50 100 200 400 600 800 Won-Top Electronics
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1N400x MIL-STD-202 1N400 5000/T 1N4001-TB-LF
Abstract: Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1N 4001 VRRM VRWM VR , 1N4001 â'" 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO , Output Current (Note 1) @TA = 75°C 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N Won-Top Electronics
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1N4006-T3 1N4006-TB 1N4006 1N4007-T3 1N4007-TB
Abstract: current by 20%. Symbol RMS Reverse Voltage 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit 50 100 200 400 600 800 1000 V VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1N 4001 VRRM VRWM VR , 1N4001 â'" 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Won-Top Electronics
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Abstract: Voltage DC Blocking Voltage 1N 4001 VRRM VRWM VR Characteristic 35 70 140 280 , 1N4001 ­ 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads , °C 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 Unit 50 100 200 Won-Top Electronics
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CHARACTERISTICS DIODE 1N4007 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 DIODE 1N4001 WORKING
Abstract: PNP( IS=1.320E-018 CJE=14.423F MJE=470M VJE=850M CJC=17.586F + MJC=400M VJC=650M BF=10K BR=746.167U TF=1N , ( IS=1.968E-018 CJE=21.929F MJE=470M VJE=850M CJC=21.582F + MJC=400M VJC=650M BF=10K BR=809.067U TF=1N , =3.300E-019 CJE=3.606F MJE=470M VJE=850M CJC=5.242F + MJC=400M VJC=650M BF=10K BR=816.121U TF=1N FC=900M ) .ENDS , A D a nd E S D STRUCTURES Q30 Q 31 V IN + I1 V IN - O utp ut B uffe r C ircuit M A X , 3761. VC C IN P K G IN D R V IN + R L1 V IN + C L1 C P 12 C P1 LP1 R P1 C1 Q27 IN R L2 V IN P -
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k 2101 equivalent MAX3761 H11M032 117E-018 420E-021 112E-030 HDE072021
Abstract: 5 ° C 1 N 4001 1N4002 1N 4003 1N4004 1N4005 1N4006 1N4007 V r â'" M ax. D C Blockin g , Ratings and Characteristics 1N4001 â  Econom ical 1 ampere general purpose diode for industrial , STYLE AND DIMENSIONS + 5.2 (0.205) MAX. 0.86(0.034) MAX. D IA .' Ã' 2.7 (0.107) MAX , * 1000* 35 70 140 280 4 20 560 7 00 ELECTRICAL SPECIFICATIONS 1N 4 00 1 I f (A V ) M a x -
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1N4D01 S54SE 1000G 0004C
Abstract: excess o f 100/d7, a high current diode from input to output (1N 4001, etc.) w ill protect the ; froi , V ^ V 1N^ -2 5 V - 7 V ^ V IN^ -2 5 V , Tj=25 °C Line Regulation V rTM Line - 8 V ^ V in ^ - 18V, Tj , =25°C Line Regulation V Reg Line - 1 1 V ^ V 1N^ -2 1 V , Tj=25°C 80 mV 50 Load Regulation Vp , ) CHARACTERISTIC SYM BO L TEST CONDITION Tj=25 °C Output Voltage 5m A ^ I0 ^ 350m A , - 1 4 .5 V ^ V 1N^ - 2 7 V , ÖJA fC /W ) + 96.1 C i - 2 .2 |j F m + WL C 0 = 1jiF Ta $JC+ 0 C A -V , o in K JA 79X X -
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79m15f KIA79M KIA79M05F/PI/T79M15F/PI/T K1A79M 05F/PI/T 08F/PI/T 12F/PI/T
Abstract: SUPERSEDING- MIL-S-19500/192A 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM , requirements for a germanium semiconductor diode. Three levels of product assurance are provided for each device type as specified 1n MIL-S-19500. 1.2 Physical dimensions. See figure 1 (DO-7). 1.3 Maximum , Primary electrical characteristics. The diode shall have salient characteristics at ambient temperature of , , additions, deletions) and any pertinent data which may be lof use 1n Improving this document should be -
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1N276 4026 IC CI 4016 ci 4081 ic 4081 in276 GDDG15S MIL-S-19500/192B
Abstract: UNIT Vcc U,5K SENSE I OUTPUT VCC R 2 I 15 K ALARM I OUTPUT 1N 4001 TX is Ã! VZ LC Rc , : + 8 V to + 26 V â'¢ Can withstand overvoltages of as high as 60 V between Vqc ancl ground â , temperature range Toper -40 to +85 °C Junction temperature T, _. + 150 °C THERMAL CHARACTERISTICS , TDF1779A ELECTRICAL OPERATING CHARACTERISTICS Vqq = + 24 V, - 40°C < Tj < + 85°C (unless otherwise , V Logic input threshold (pin 5) V| - 0 8 V High level input current (pins 7, 10, 11) VI = + 2 V -
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TDF1779ASP 1779A lem HA CB-500
Abstract: -0.65 4-2.8 + 0 .1 Unit : mm 4.0±0.1 >l d +l 05 c\j , LO CO o io CD o LO CD Ö I 1 I 1 1 8 , Voltage Input Diode Current Output Diode Current DC Output Current DC V (x / G ro u n d Current Power , 961001EBA2 - 0 .5 ~ V CC + 0.5 - 0 .5 ~ V c c + 0.5 ±20 ± 20 ±35 ±37.5 300 -65-150 260 PIM A Q Ç I f î , 1N 1 ju A ICC - - - , ithout load. Average operating current can be obtained by the equation : lCC(opr) = CpD`Vcc*f IN + l c c -
OCR Scan
TC7W241 TC7W241FU
Abstract: Application 40 kHz Carrier + 9.0Vdc 1500uF (2) 1N914 + 12 Vdc + 455 kHz 1N 4001 10uF 100 MPS 6562 27 270 To Keyboard 100k 13 1.0k LED 150k 0.002 + 5.0 Vdc 1.0k 17 12 0.1 500 100 18 + 0.001 7 3 8 4 180k 2 16 220 , . It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode , Complementary Detector Diode PIN CONNECTIONS Output 1 8 VCC Filter 2 7 Input Tank 3 6 Filter Motorola
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MC1449 IR decoder SO8 IR REMOTE CONTROL IC CANS-4612Z IR 5M receiver LITRONIX
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