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LT1213ACJ8 Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, 28 MHz BAND WIDTH, CDIP8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1213ACS8 Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, 28 MHz BAND WIDTH, PDSO8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1211ACJ8 Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, 14 MHz BAND WIDTH, CDIP8, HERMETIC SEALED, CERDIP-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1211ACS8 Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, 14 MHz BAND WIDTH, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LT1013CJ8 Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, CDIP8, 0.300 INCH, HERMETIC SEALED, CERAMIC, DIP-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices
LTC6240HVIS8 Linear Technology IC OP-AMP, 400 uV OFFSET-MAX, 18 MHz BAND WIDTH, PDSO8, 0.150 INCH, PLASTIC, SOP-8, Operational Amplifier visit Linear Technology - Now Part of Analog Devices

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400-470MHz

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: < Silicon RF Power Modules > RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp , (Case) · Broadband Frequency Range: 400-470MHz · Metal shield structure that makes the improvements of , : Oct2011 1 < Silicon RF Power Modules > RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage , Temperature Range Storage Temperature Range f=400-470MHz, VGG , . Publication Date : Oct2011 2 < Silicon RF Power Modules > RA30H4047M1 RoHS Compliance, 400-470MHz 30W Mitsubishi
Original
400-470MH 470-MH

rf power amplifier 400MHz

Abstract: RA45H4047M RA45H4047M RoHS Compliance , 400-470MHz 45W 12.5V, 3 Stage Amp. For , Range: 400-470MHz · Low-Power Control Current IGG=1mA (typ) at VGG=5V · Module Size: 66 x 21 x 9.88 mm · , > RA45H4047M RoHS Compliance , 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase , VDD , > RA45H4047M RoHS Compliance , 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase
Mitsubishi
Original
rf power amplifier 400MHz RA45H4047M-101
Abstract: RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp , Broadband Frequency Range: 400-470MHz Low-Power Control Current GG=1mA (typ) at VGG=5V I Module Size: 66 , , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase=+25°C, unless otherwise , Temperature Range -40 to +110 ° C Tcase(OP) Tstg f=400-470MHz, ZG=ZL=50 The above , degradation or destroy â'" RA13H4047M RoHS Compliance , 400-470MHz Mitsubishi
Original
RA13H4047M-101

400-470MHz

Abstract: < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp , , T>40% @ VDD=12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 400-470MHz · Metal shield structure , .2011 1 < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage , , RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase
Mitsubishi
Original
400-470MHz

RD01MUS2

Abstract: RD07MUS2B Silicon RF by MIYOSHI Electronics) RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz,Vdd , Semiconductors 1/17 RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz,Vdd=7.2V - AN-UHF , for Silicon RF Power Semiconductors 2/17 RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz , f=400-470MHz,Vdd=7.2V - AN-UHF-097-B- Frequency characteristics 2 @ Pin Control (@Po=6.3W, 5W , RD07MUS2B RF characteristics data at f=400-470MHz,Vdd=7.2V - AN-UHF-097-B- Frequency characteristics 2
Mitsubishi
Original
2306C rpc05 GP 624 GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E AN-UHF-097-B 086ZE-G 470MH 2302S

RD07MUS2B

Abstract: Single-Stage amplifier RF performance at f= 400-470MHz,Vdd=7.2V SUMMARY: This application note shows the RF wide band , Semiconductors 1/13 RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd , RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V - AN-UHF , RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V - AN-UHF , RD07MUS2B single-stage amplifier efficiency matching RF performance at f=400-470MHz,Vdd=7.2V - AN-UHF
Mitsubishi
Original
AN-UHF-098-B GRM2162C1H8R0DD01E GRM2162C1H290GD01E GRM2162C1H540GD01E Single-Stage amplifier gp 219 GP 743 AN-UHF-098-B-

rf power amplifier circuit by 400-470mhz

Abstract: RA07M4047M ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE RA07M4047M Silicon MOS FET Power Amplifier, 400-470MHz 7W PORTABLE RADIO OUTLINE DRAWING PIN: 1 Pin :RF INPUT 2 Vgg:GATE BIAS SUPPLY 3 VddiDRAIN BIAS SUPPLY 4 Po:RF OUTPUT 5 GND:FIN MAXIMUM , VGG
-
OCR Scan
rf power amplifier circuit by 400-470mhz 400M

GRM1882C1H5R0CZ01D

Abstract: GRM1882C1H101JA01D Electronics) SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V , performance at f=400-470MHz, Vdd=7.2/6.5V - AN-UHF-111- Frequency characteristics @Vdd=7.2V, Pin , Power Semiconductors 2/14 RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz , RF Power Semiconductors 3/14 RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz , Semiconductors 4/14 RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V -
Mitsubishi
Original
AN-UHF-111 GRM1882C1H150JA01D GRM1882C1H5R0CZ01D GRM1882C1H9R0DZ01D GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C 103AJ-G 400MH GRM1882C1H390JA01D GRM1882C1H300JA01D
Abstract: RA45H4047M RoHS Compliance , 400-470MHz 45W 12.5V, 3 Stage Amp. For , % @ VDD=12.5V, VGG=5V, Pin=50mW â'¢ Broadband Frequency Range: 400-470MHz â'¢ Low-Power Control , , 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase=+25°C, unless otherwise , Range -40 to +110 °C Tcase(OP) Tstg f=400-470MHz, ZG=ZL=50â"¦ Note1. The above , , 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50â"¦, unless Mitsubishi
Original

RA55H4047M

Abstract: RA55H4047M RoHS Compliance , 400-470MHz 55W 12.5V, 3 Stage Amp. For , Range: 400-470MHz · Low-Power Control Current IGG=1mA (typ) at VGG=5V · Module Size: 66 x 21 x 9.88 mm · , > RA55H4047M RoHS Compliance , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase , VDD , > RA55H4047M RoHS Compliance , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO specified) TYPICAL
Mitsubishi
Original
RA55H4047M-101

PPM30

Abstract: AXIS7050C43 20.029.9MHz 15mA max 30.039.9MHz 20mA max 40.047.0MHz 25mA max CMOS 15pF max 0.1Vdd max % Voh , 40.047.0MHz 30mA max 0.9Vdd min 10 ns max F9.9 MHz 6 ns max F10 MHz at 10%90%Vdd 4555 at 1/2Vdd
Axtal
Original
AXIS7050C43 AXIS7050C45 PPM30 5-500H D-74821
Abstract: RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For , =5V, Pin=50mW out Broadband Frequency Range: 400-470MHz Low-Power Control Current GG=1mA (typ) at VGG , RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase , Storage Temperature Range -40 to +110 ° C Tcase(OP) Tstg f=400-470MHz, ZG=ZL=50 The , degradation or destroy â'" RA30H4047M RoHS Compliance , 400-470MHz 30W Mitsubishi
Original
RA30H4047M-101
Abstract: < Silicon RF Power Modules > RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp , =12.5V, VGG=5V, Pin=50mW out 5 RF Ground (Case) â'¢ Broadband Frequency Range: 400-470MHz â'¢ Metal , Modules > RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO MAXIMUM , ° C f=400-470MHz, VGG , > RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE Mitsubishi
Original

RA30H4047M

Abstract: rf power amplifier circuit by 400-470mhz ATTENTION OBSERVE PRECAUTIONS FOR HANDLING eletrostatic sensitive devices â  MITSUBISHI RF POWER MODULE \ Revision date:30th/Nov.'01 RA30H4047M Silicon MOS FET Power Amplifier, 400-470MHz 30W MOBILE RADIO OUTLINE DRAWING unit . mm tÃO. 45±0.16 PIN: 1 Pin :RF .INPUT 2 VGG:GATE BIAS SUPPLY , GATE BIAS VOLTAGE VDD
-
OCR Scan
Abstract: RA55H4047M RoHS Compliance , 400-470MHz 55W 12.5V, 3 Stage Amp. For , % @ VDD=12.5V, VGG=5V, Pin=50mW â'¢ Broadband Frequency Range: 400-470MHz â'¢ Low-Power Control , , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase=+25°C, unless otherwise , Range -40 to +110 °C Tcase(OP) Tstg f=400-470MHz, ZG=ZL=50â"¦ Note1. The above , , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50â"¦, unless Mitsubishi
Original

RA60H4047M

Abstract: < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp , , T>40% @ VDD=12.5V, VGG=5V, Pin=50mW out â'¢ Broadband Frequency Range: 400-470MHz â'¢ Metal , PACKAGE CODE: H2M < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V , Temperature Range f=400-470MHz, VGG , '" â'" < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2
Mitsubishi
Original
RA60H4047M

RF MODULE 435Mhz

Abstract: MOSFET MODULE - 400-470MHz , T>40% @ VDD=12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 400-470MHz · Low-Power Control , .Lead in electronic Ceramic parts. BLOCK DIAGRAM 2 3 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE , Power Modules > RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO , Temperature Range f=400-470MHz, ZG=ZL=50 CONDITIONS VGG , . Publication Date : Jul.2011 2 RA13H4047M RoHS Compliance , 400-470MHz 13W
Mitsubishi
Original
RF MODULE 435Mhz MOSFET MODULE - 400-470MHz
Abstract: RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For , Range: 400-470MHz · Low-Power Control Current IGG=1mA (typ) at VGG=5V · Module Size: 66 x 21 x 9.88 mm · , > RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase , Input Power Output Power Operation Case Temperature Range Storage Temperature Range f=400-470MHz, ZG=ZL , .2011 2 RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp Mitsubishi
Original

AXIS7050C63

Abstract: AXIS7050C65 2.019.9MHz 10mA max 20.029.9MHz 15mA max 30.039.9MHz 20mA max 40.047.0MHz 25mA max CMOS 15pF max , 30.039.9MHz 25mA max 40.047.0MHz 30mA max 0.9Vdd min 10 ns max F9.9 MHz 6 ns max F10 MHz at 10%90
Axtal
Original
AXIS7050C63 AXIS7050C65 150cm axtal

RA13H4047M-E01

Abstract: rf power amplifier circuit by 400-470mhz MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range , =5V, Pin=50mW · Broadband Frequency Range: 400-470MHz · Low-Power Control Current IGG=1mA (typ) at VGG , Range -40 to +110 °C TYP MAX UNIT 470 MHz f=400-470MHz, ZG=ZL=50 The above
Mitsubishi
Original
RA13H4047M-E01 RA13H4047M-01 I-20041
Abstract: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 400-470MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 400- to 470 , =7.2V, Pin=50mW â'¢ Broadband Frequency Range: 400-470MHz â'¢ Low-Power Control Current GG=1mA (typ) at VGG , Mitsubishi
Original
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