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Part Manufacturer Description Datasheet BUY
CAR0724FPXXXZ01A GE Critical Power CAR0724FP series front-end, Input: 100-120/200-240VAC; Output: 24VDC @ 750W; 5VDC @ 0.5A visit GE Critical Power
CP2725AC48TEZ-FB GE Critical Power CP2725AC48TEZ-FB Compact Power Line High Efficiency Rectifier, Input: 100-120/220-240 Vac; Default output: 48Vdc; 5 Vdc @ 4W visit GE Critical Power
CP2000AC48TEZ-FB GE Critical Power CP2000AC48TEZ-FB Compact Power Line High Efficiency Rectifier, Input: 100-120/220-240 Vac; Output: 2250W @ 52Vdc; 5 Vdc @ 4W visit GE Critical Power
CP2725AC54TEZ GE Critical Power CP2725AC54TE CPL High Efficiency Rectifier, 100-120/200-277VAC input; Default Outputs: ±54VDC @ 2725W, 5VDC @ 4W visit GE Critical Power
CP2725AC54TEP GE Critical Power CP2725AC54TE CPL High Efficiency Rectifier, 100-120/200-277VAC input; Default Outputs: ±54VDC @ 2725W, 5VDC @ 4W visit GE Critical Power
CP2000AC54TEP GE Critical Power CP2000AC54TE Compact Power Line High Efficiency Rectifier, 100-120/200-277VAC input; Default Outputs: ±54VDC @ 2000W, 5VDC @ 4W visit GE Critical Power

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4-100/NA

Catalog Datasheet MFG & Type PDF Document Tags

C229

Abstract: TSOP54 N.C/RFU B SDRAM_1M*16*4-100 TSOP54 GND SDRAM_1M*16*4-100 TSOP54 B SDRAM_1M*16*4-100/NA TSOP54 GND SDRAM_1M*16*4-100/NA TSOP54 GND U35 MAB#0 MAB#1 MAB#2 MAB#3 MAB#4 MAB#5 MAB#6 MAB#7 MAB , 1 1 1 1 2 C246 10P 0603B 2 2 GND 1 SDRAM_1M*16*4-100/NA TSOP54 SDRAM_1M*16*4-100/NA TSOP54 C247 10P 0603B GND 1 1 2 2 2 2 2 2 2 D 2
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C229 MAB10 MAB13 A10/AP A12/BA1 A13/BA0 4-100/NA

din 982

Abstract: din 985 M14 2.00 22.00 16.00 26.50 14.00 26.00 * M16 2.00 24.00 18.00 35.00 16.00 34.00 M18 2.50 27,00 NA NA 18.50 45.00 * M 20 ',2.50 30,00 22.00 65.00 20,00 65.00 M22 2.50 32.00 NA NA 22.00 75.00 â'¢ M24 3.00 36.00 NA NA 24.00 100.00 M27 3.00 ^41.00 NA NA 27.00 162.00 M30 3.50 46.00 NA NA 30.00 212.00 1 M33 3.50 50.00 NA NA 33.00 317.00 M 36 4.00 55.00 NA NA 36.00 415.00 M42 4.50 65.00 NA NA , Material M3 0.50 5.50 NA NA 4.00 0.50 DIN 982 . OF Grade 8 DIN 985 CVF Grade 6 M4 0.70 7.00 NA NA 5.00
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OCR Scan
din 982 din 985 M14 Nut M14 to m22

AD8203

Abstract: AD8203YCSURF +410.0 NA +121.0 -409.0 Y -205.2 -413.0 -413.0 -308.6 +272.4 NA +417.0 +205.2 +VS OUT , p-p nV/Hz +0.3 4.8 3.5 0.25 75 +125 V/V % V nA 10 300 60 0.33 3.5
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AD8203 MS-012-AA MO-187-AA AD8203YRMZ AD8203YCSURF AD8203YRMZ-RL1 AD8203YRMZ-R71

93Z665

Abstract: Load and Note 4 35 20 20 40 20 20 45 30 30 ns ns ns »ACS »HZ 4-100 NA TL S E M I
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93Z665 93Z665/93Z667 93Z667 AO000102GND1 02GN0 93Z665L

W22C

Abstract: S12301DS 1M*16"4-100 NA TSOP54- SDRAM 1M*16*4-100 NA TSOP54' SDRAM 1M*16*4-100 NA TSOP54- SDRAM 1M*16*4100 NA TS0P54 Reserve ï w 5 MD[0 63] î MDD62 P S ?,. 8/10/'99 Modify 8/10/`99 Modify , 7 7 7 7 7 4 BRDY -NA CPURST CPUINIT -A20M INTR NMI AQZL DPO DP1 DP2 DP3 DP4 DP5 DP6 DP7 PEN# BF2 BRDY# NA# RESET INIT A20M# INTR/LINTO NMI/LINT1 FLUSH# KEN# WB/WT# AHOLD EADS# INV BUSCHK# !GNNE# , 4 .5 5 .0 o 5 .5 · C533 56U NA 7343 4V MiïAC '¡tie Central Processor Unit Size Document
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5133S W22C S12301DS t12m256 stp520 T12M256A-12J VT82C686A H8-3434F NS97338 PC507 PC500

K402

Abstract: AD8203 +410.0 NA +121.0 -409.0 Y -205.2 -413.0 -413.0 -308.6 +272.4 NA +417.0 +205.2 1048µm , p-p nV/Hz +0.3 4.8 3.5 75 +125 V/V % V nA 10 300 60 0.33 3.5 75 +2
Analog Devices
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MO-187AA K402 C105 AD8203YRMZ1 D05013

AD8203

Abstract: AD8203YCSURF A1 A2 OUT NC +VS +IN X -409.0 -244.6 +229.4 +410.0 +410.0 NA +121.0 -409.0 Y -205.2 -413.0 -413.0 -308.6 +272.4 NA +417.0 +205.2 1048µm ­IN A2 GND A1 Figure 5 , 0.33 kHz V/µs µV p-p nV/Hz 3.5 0.25 75 +125 V nA 10 300 60 0.33 3.5
Analog Devices
Original
AD8203YRMZ-REEL1 AD8203YRMZ-REEL71
Abstract: A2 OUT NC +VS +IN 1036μm X â'409.0 â'244.6 +229.4 +410.0 +410.0 NA +121.0 â'409.0 Y â'205.2 â'413.0 â'413.0 â'308.6 +272.4 NA +417.0 +205.2 +VS OUT +IN 1048Î , V/µs µV p-p nV/âšHz +0.3 4.8 3.5 0.25 75 +125 V/V % V nA â"¦ 10 300 , correspondingly small. The A2 input bias current has a typical value of 40 nA, however, this can increase under , A2 INPUT BIAS CURRENT (nA) A1 â'"100 â'"80 â'"60 â'"40 â'"20 Figure 40. Simplified Analog Devices
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AD8203YRZ1 AD8203YRZ-RL1 AD8203YRZ-R71 D05013-0-10/05

2C105

Abstract: AD8203 OUT NC +VS +IN 1036m X -409.0 -244.6 +229.4 +410.0 +410.0 NA +121.0 -409.0 Y -205.2 -413.0 -413.0 -308.6 +272.4 NA +417.0 +205.2 +VS OUT +IN 1048m ­IN A2 GND , +125 V/V % V nA 10 300 60 0.33 3.5 75 V/V % ppm/°C 7 +0.3 4.8 103 , correspondingly small. The A2 input bias current has a typical value of 40 nA, however, this can increase under , A2 INPUT BIAS CURRENT (nA) A1 ­100 ­80 ­60 ­40 ­20 Figure 40. Simplified Schematic
Analog Devices
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2C105
Abstract: GND A1 A2 OUT NC +VS +IN X -409.0 -244.6 +229.4 +410.0 +410.0 NA +121.0 -409.0 Y -205.2 -413.0 -413.0 -308.6 +272.4 NA +417.0 +205.2 05013-004 6 NC TOP VIEW A2 4 (Not to Scale) 5 OUT 1036µm +VS , Performance 1 2 7 0.02 97 ±0.3 4.8 103 0.02 97 7 ±0.3 4.8 103 100 2 100 2 V/V % V k V/V % V nA , of 40 nA, however, this can increase under certain conditions. For example, if the input signal to , ) RCM RCM A3 RF RG A2 RF 5 ­IN 1 RA RA A1 ­120 A2 INPUT BIAS CURRENT (nA) 3 4 Analog Devices
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AD8203YRMZ-RL AD8203YRMZ-R7 AD8203YRZ AD8203YRZ-RL AD8203YRZ-R7 D05013-0-2/13
Abstract: GND A1 A2 OUT NC +VS +IN X -409.0 -244.6 +229.4 +410.0 +410.0 NA +121.0 -409.0 Y -205.2 -413.0 -413.0 -308.6 +272.4 NA +417.0 +205.2 05013-004 6 NC TOP VIEW A2 4 (Not to Scale) 5 OUT 1036µm +VS , Performance 1 2 7 0.02 97 ±0.3 4.8 103 0.02 97 7 ±0.3 4.8 103 100 2 100 2 V/V % V k V/V % V nA , of 40 nA, however, this can increase under certain conditions. For example, if the input signal to , ) RCM RCM A3 RF RG A2 RF 5 ­IN 1 RA RA A1 ­120 A2 INPUT BIAS CURRENT (nA) 3 4 Analog Devices
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D05013-0-4/13

DMD48

Abstract: DMD46 RAS CAS WE CS LDQM UDQM N.C N.C/RFU SDRAM_1M*16*4/NA GND N.C N.C/RFU N.C N.C/RFU N.C N.C/RFU SDRAM_1M*16*4/NA GND 4 SDRAM_1M*16*4/NA GND SDRAM_1M*16*4/NA GND 4 Title 7233 M
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DMD48 DMD46 DMD55 dmd20 100MHZ SD411666800001
Abstract: 851 Prise largable push-pull / Push-pull locking plug Caractéristiques gé©rales General characteristics â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Verrouillage : en poussant sur la bague Déverrouillage : par traction sur la tirette de largage Montage : sur toutes les embases 851 A #7; rrangements et contacts à sertir et à souder : (voir pages 10 et 1 5) 4/1 â'¢ Autres caractéristiques , / Contact type P = mâle / male - S = femelle / female Positionnement / Orientation Normal ('™apparaît Souriau
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Abstract: 851 Series Prise largable push-pull / Push-pull locking plug Caractéristiques gé©rales General characteristics â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Verrouillage : en poussant sur la bague Déverrouillage : par traction sur la tirette de largage Montage : sur toutes les embases 851 A #7; rrangements et contacts à sertir et à souder : (voir pages 10 et 1 5) 4/1 â'¢ Autres , contact/ Contact type P = mâle / male - S = femelle / female Positionnement / Orientation Normal ( Souriau
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lcd acer monitor circuit diagram

Abstract: bt 1690 0.25 W 0.1 W 0.008 NA 2.0W 2.0W NA 0.85W 0.60W 0.2W 0.1W NA NA 2.0W 2.0W NA 0.85W 0.60W 0.2W 0.1W NA Performance 1.85 W idle (avg.) Active idle (avg.) Low power idle (avg.) Standby (avg.) Sleep , 55 ° C 8% - 90% 5 ° to 55 ° C 8% - 90% 5 ° to 55 ° C NA 5 ° to 55 ° C NA 29.4 ° C 29.4 ° C NA NA 200G/2ms 0.67 G (5 - 500 Hz) 1 G 0 - P (5 500 Hz) -40 ° to 65 ° C 200G/2ms 0.67 G (5 - 500 Hz) 1 G 0 - P (5 500 Hz) -40 ° to 65 ° C 300 G / 2ms, 160G / 1ms NA 300 G / 2ms, 160G / 1ms
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lcd acer monitor circuit diagram bt 1690 acer adapter circuit diagram HTS541060G9 seagate hard disk drive diagram ACER 730 915PM/915GM 2200GB 256MB 512MB SDR-083 SBW-242

S-8209AAV-T8T1U

Abstract: s8209a Rev.3.2_00 DO Delay circuit 8.31 M CDT CO VDD + Overcharge detection comparator + - 400 nA CTLD + 400 nA CTLC - Overdischarge detection comparator VSS Cell-balance detection comparator - CB , ICTLCH VDS = 3.5 V, VCTLC = 0 V 320 400 480 nA 6 Source current CTLD*2 pin ICTLDH VDS = 3.5 V, VCTLD = 0 V 320 400 480 nA 6 Source current CB pin ICBH VCB = 4.0 V, VDS = 4.5 V 30 - - A 7 Sink current CB , [nA] 4. 2 ICTLDH vs. Ta (VDS = 3.5 V) 600 500 400 300 200 100 0 -40 -25 0 25 Ta [°C] 50 75 85
Seiko Instruments
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S-8209AAV-T8T1U s8209a S-8209A

S-8209AAF

Abstract: Rev.3.2_00 DO Delay circuit 8.31 M CDT CO VDD + Overcharge detection comparator + - 400 nA CTLD + 400 nA CTLC - Overdischarge detection comparator VSS Cell-balance detection comparator - CB , ICTLCH VDS = 3.5 V, VCTLC = 0 V 320 400 480 nA 6 Source current CTLD*2 pin ICTLDH VDS = 3.5 V, VCTLD = 0 V 320 400 480 nA 6 Source current CB pin ICBH VCB = 4.0 V, VDS = 4.5 V 30 - - A 7 Sink current CB , [nA] 4. 2 ICTLDH vs. Ta (VDS = 3.5 V) 600 500 400 300 200 100 0 -40 -25 0 25 Ta [°C] 50 75 85
Seiko Instruments
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S-8209AAF

S-8209ABD-T8T1U

Abstract: ic cmos 4090 Rev.3.2_00 DO Delay circuit 8.31 M CDT CO VDD + Overcharge detection comparator + - 400 nA CTLD + 400 nA CTLC - Overdischarge detection comparator VSS Cell-balance detection comparator - CB , ICTLCH VDS = 3.5 V, VCTLC = 0 V 320 400 480 nA 6 Source current CTLD*2 pin ICTLDH VDS = 3.5 V, VCTLD = 0 V 320 400 480 nA 6 Source current CB pin ICBH VCB = 4.0 V, VDS = 4.5 V 30 - - A 7 Sink current CB , [nA] 4. 2 ICTLDH vs. Ta (VDS = 3.5 V) 600 500 400 300 200 100 0 -40 -25 0 25 Ta [°C] 50 75 85
Seiko Instruments
Original
S-8209ABD-T8T1U ic cmos 4090 S-8209ABF-I8T1U

4116

Abstract: D1667 : Non-adhesive side 6 x 10 14 1 x 1014 3 x 1015 open cell - NA no yes no yes none Surface Resistivity: Adhesive side 1 x 1015 open cell - NA yes yes yes yes none 1 x 1015 open cell - NA no yes yes yes , NA no no no yes none Surface Resistivity: Adhesive side 6 x 1012 open cell - NA yes yes yes yes none 5 x 1012 open cell - NA no yes yes yes none Water Absorption: 30% Compression
3M Industrial Adhesives & Tapes
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4116 D1667 G21-70 FAR 25853 25853 NA 36 foam

S-8209AAF

Abstract: S-8209AAH-I8T1x .3.0_00 DO 8.31 M CDT CO VDD + - CB + - 400 nA CTLD + 400 nA , *2 3.5 7.0 5 I CTLCH V DS = 3.5 V, V CTLC = 0 V 400 480 nA CTLC *2 6 I CTLDH V DS = 3.5 V, V CTLD = 0 V 400 480 nA CTLD *2 6 V CB = 4.0 V, V DS = 4.5 V I CBH A CB 30 7 V CB = , 3.5 (2) I CTLDH Ta (V DS = 3.5 V) 500 ICTLDH [nA] 600 500 ICTLCH [nA] 600 400 300
Seiko Instruments
Original
S-8209AAH-I8T1x s8209aac S-8209AIC PH008-A-P-SD FT008-A-P-SD PH008-A-C-SD FT008-E-C-SD PH008-A-R-SD

NTC 15k temperature vs resistance table

Abstract: NTC 220 ohm N.C/RFU B SDRAM_1M*16*4-100 TSOP54 GND SDRAM_1M*16*4-100 TSOP54 B SDRAM_1M*16*4-100/NA TSOP54 GND SDRAM_1M*16*4-100/NA TSOP54 GND U35 MAB#0 MAB#1 MAB#2 MAB#3 MAB#4 MAB#5 MAB#6 MAB#7 MAB , 1 1 1 1 2 C246 10P 0603B 2 2 GND 1 SDRAM_1M*16*4-100/NA TSOP54 SDRAM_1M*16*4-100/NA TSOP54 C247 10P 0603B GND 1 1 2 2 2 2 2 2 2 D 2
Venkel
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NTC 15k temperature vs resistance table NTC 220 ohm 4100 NTC0402 NTC0603 NTC0805 JIS-C2571

NTC 4D 15

Abstract: NTC 20K Ohm '¢ M24 3.00 36.00 NA NA 24.00 100.00 M27 3.00 ^41.00 NA NA 27.00 162.00 M30 3.50 46.00 NA NA 30.00
Venkel
Original
NTC 4D 15 NTC 20K Ohm NTC 4.7K table thermistor ntc 15k 358N NTC 104

JIS-C2571

Abstract: NTC 18R +410.0 NA +121.0 -409.0 Y -205.2 -413.0 -413.0 -308.6 +272.4 NA +417.0 +205.2 +VS OUT
Venkel
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NTC 18R

NTC0805

Abstract: NTC 18R 1M*16"4-100 NA TSOP54- SDRAM 1M*16*4-100 NA TSOP54' SDRAM 1M*16*4-100 NA TSOP54- SDRAM 1M*16*4100 NA TS0P54 Reserve ï w 5 MD[0 63] î MDD62 P S ?,. 8/10/'99 Modify 8/10/`99 Modify
Venkel
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103 ntc

JIS-C2571

Abstract: NTC 4D 15 Load and Note 4 35 20 20 40 20 20 45 30 30 ns ns ns »ACS »HZ 4-100 NA TL S E M I
Venkel
Original
20k 471
Abstract: +410.0 NA +121.0 -409.0 Y -205.2 -413.0 -413.0 -308.6 +272.4 NA +417.0 +205.2 1048µm Molex
Original
LR32159 130095S

ntc 10K B 3950

Abstract: 4b/Elmwood Sensors 3100 GND A1 A2 OUT NC +VS +IN X -409.0 -244.6 +229.4 +410.0 +410.0 NA +121.0 -409.0 Y -205.2 -413.0 -413.0
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ntc 10K B 3950 4b/Elmwood Sensors 3100 NTHC04 NTHC06 NTHC08 NTHC-002 NTHC0805

NTC0805

Abstract: ntc 1.8K 25 GND A1 A2 OUT NC +VS +IN X -409.0 -244.6 +229.4 +410.0 +410.0 NA +121.0 -409.0 Y -205.2 -413.0 -413.0
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ntc 1.8K 25
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