NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| CY7C199-15LMB | Cypress Semiconductor | 32K x 8 Static RAM |
13 pages, |
Original |  |
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| CY7C199-15LMB | Cypress Semiconductor | 32,768 x 8 Static R/W RAM |
10 pages, |
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| CY7C199-15PC | Cypress Semiconductor | 32K x 8 Static RAM |
13 pages, |
Original | |
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| CY7C199-15PC | Cypress Semiconductor | 32,768 x 8 Static R/W RAM |
10 pages, |
Scan | |
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| CY7C199-15PC | Cypress Semiconductor | 32K x 8 Static RAM |
13 pages, |
Original | |
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| CY7C199-15VC | Cypress Semiconductor | 32K x 8 Static RAM |
13 pages, |
Original | |
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| CY7C199-15VC | Cypress Semiconductor | 32,768 x 8 Static R/W RAM |
10 pages, |
Scan | |
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| CY7C199-15VI | Cypress Semiconductor | 32K x 8 Static RAM |
13 pages, |
Original | |
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| CY7C199-15ZC | Cypress Semiconductor | 32K x 8 Static RAM |
13 pages, |
Original | |
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| CY7C199-15ZI | Cypress Semiconductor | 32K x 8 Static RAM |
13 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: have at least 7 ns set-up time and 0.2 ns hold time. The CY7C199-10 requires 5 ns set-up time and 0 , The Z893X1 Z893X1 requires 14 ns set-up and 6 ns hold time from /DS rising edge. The CY7C199-10 has an /OE , active, and the data on the EXT15 EXT15:0 bus is written into the CY7C199. Note: Do not use EXT7 since it is , , Read/Write, and address Least Significant Bit (LSB) to generate the /WE and /OE for the CY7C199 SRAM , bus, which becomes the address for the CY7C199, is written into the FCT377 FCT377 latches. Writing data to ... | Original |
6 pages, |
Z893X1 CY7C199 5A5A 512-WORD Z893X1 abstract |
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| Abstract: Assy Lot# Fab Lot# 48 Hours Cumulative CY7C199-PC 349415285 CY7C199-VC 349414005 CY7C199-VC 349414597 3443978 3441781 3442872 0/298 0/271 0/744 0/1313 * Device High , Hours CY7C199-PC 349415285 CY7C199-VC 349414005 CY7C199-VC 349414597 3443978 3441781 3442872 , Fab Lot# 80 Hours 500 Hours Cumulative CY7C199-PC 349412994 3435229 0/118 0/118 , Fab Lot# 80 Hours 168 Hours Cumulative CY7C199-PC 349315285 3443978 0/76 0/76 ... | Original |
8 pages, |
mos die CY7C199 CY7C197 CY7C1399 6300H EME-6300H datasheet abstract |
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| Abstract: = 0 CY7C199-ZC CSPI-R 3709211 619702326 192H 15 0 -STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 7.0V) CY7C199-VC CY7C199-VC , CY7C199-VC CSPI-R 3703412 619702573/74/75 48H 748 0 2 EOS CY7C199-VC CSPI-R 3703412 619702573/74/75 , -STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 192 HRS 30C/60 30C/60%RH CY7C199-ZC CSPI-R 3709211 , -STRESS: HIGH TEMPERATURE STORAGE (165C, NO BIAS) CY7C199-ZC CSPI-R 3709211 619702326 336H 45 0 ... | Original |
4 pages, |
JESD22 8361H cel 9200 9200 9200/9200U CY7C1009/CY7C199 9200/9200U abstract |
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| Abstract: Hours Cumulative CY7C199-DC CY7C199-VC 219405099 219401414 3407237 3401882 0/347 0 , Device Assy Lot# Fab Lot # 80 Hours 500 Hours 1000 Hours Cumulative CY7C199-DC CY7C199-DC CY7C199-VC 219402615 219405099 219401414 3403013 3402737 3401882 0/120 0/120 0/262 , , 150°C) Device Assy Lot# Fab Lot# 80 Hours 168 Hours Cumulative CY7C199-DC CY7C199-VC , (Condition C, -65°C to 150°C) Device Assy Lot# Fab Lot# 100 Hours CY7C199-DC CY7C199-VC ... | Original |
9 pages, |
Olin-194 CY7C191 CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C198 CY7C199 256k sram 6 mil poly vapor barrier 7C199A CY7C191 abstract |
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| Abstract: : Device 002602 Fab Lot # Assy Lot # Assy Loc Duration Samp ReJ CY7C199-VC 402115 610027629 CSPI-R COMP 15 0 CY7C199-VC 402115 610027629M 610027629M CSPI-R COMP 15 0 CY7C199-VC 402115 610027629M1 610027629M1 CSPI-R COMP 15 0 STRESS: STRESS: Failure Mechanism C-SAM HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V)PRE COND 192 HR 30C/60 30C/60%RH CY7C199-VC 402115 610027629 CSPI-R 128 45 0 CY7C199-VC 402115 610027629M 610027629M CSPI-R 128 45 0 ... | Original |
7 pages, |
JESD22 epoxy qualification Dexter CY7C199 cda 199 QMI509 datasheet abstract |
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| Abstract: Cumulative CY7C199-DC CY7C199-PC CY7C199-PC 2316395 2311032 2316401 219301128 219300170 , CY7C199-DC CY7C199-PC CY7C199-PC 3322313 3325451 3316088 219303266 219304504 219301497 0/704 , Failure Rate Device Fab Lot# Assy Lot # 32 Hours 36 Hours 40 Hours CY7C199-PC CY7C199-PC CY7C199-PC 2317540 2319670 2322898 219301525 219302686 219302827 0/402 0/403 0/402 0/403 CY7C199-PC CY7C199-PC CY7C199-PC 2320753 2321890 2318591 219302879 219302880 ... | Original |
12 pages, |
sumitomo epoxy CY7C191 CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C198 CY7C199 93191 datasheet abstract |
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| Abstract: Pinout Compatibility Considerations of SRAMs This application note discusses pinouts of SRAMs and PROMs. Included in the discussion are Motorola MCM6206D MCM6206D and Cypress CY7C199. Both are 32K x 8 SRAMs, but , MCM6206D MCM6206D to the Cypress CY7C199. The pinouts shown are that of a SOJ/DIP package. As described above, the , should not matter in any application. CY7C199 MCM6206D MCM6206D Figure 3. Pinout Comparison of MCM6206D MCM6206D and CY7C199 If the addresses used for an SRAM are irrelevant, why have different numbers or ... | Original |
2 pages, |
MCM6206D CY7C199 MCM6206D abstract |
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| Abstract: Hitachi Galvantech Toshiba ISSI Mosel Vitelic Mosel Vitelic IDT W24257AJ-12 W24257AJ-12 CY7C199-12VC CY7C199-15VC CY7C199-25VC CY7C199-35VC HM62832-25 HM62832-25 GVT72024A8TS-15 GVT72024A8TS-15 TC558128 TC558128 BF T-15 IS61C256AH-15J IS61C256AH-15J ... | Original |
4 pages, |
W24257AJ-12 LAN91C100FD IS61C3216-15T HM62832-25 CY7C199-15VC CY7C199-12VC AS7C256-15 SA15Y B/LAN91C110 LAN91C100FD abstract |
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| Abstract: 5962-88662 03NX CY7C199-55DMB 28.3 DIP D22 32K x 8 SRAM A 5962-88662 04NX CY7C199-45DMB 28.3 DIP D22 32K x 8 SRAM A 5962-88662 04UX CY7C199-45LMB 28 R LCC L54 32K x 8 , 05UX CY7C199-35LMB 28 R LCC L54 32K x 8 SRAM A 5962-88662 06NX CY7C199-25DMB 4 , 08NX 28.3 DIP D22 32K x 8 SRAM A CY7C199-15DMB 4/98 CY7C199-20DMB 4/98 28.3 , CY7C199-25LMB 4/98 5962-88662 06UX 28 R LCC L54 32K x 8 SRAM A CY7C199-35DMB 5962-88662 ... | Original |
9 pages, |
99522 w14 smd transistor smd cross reference CY7C109L PALC22V10-30DMB U208 PALC22V10-25LMB CY7C346-35RMB smd transistor w16 PALC22V10-25WMB PALC22V10B-15DMB CY37256P160-83UMB PALC22V10-25DMB 11MZX 13MZX 11MZX abstract |
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| Abstract: ) W24257AJ-12 W24257AJ-12 CY7C199-12VC CY7C199-15VC CY7C199-25VC CY7C199-35VC HM62832-25 HM62832-25 GVT72024A8TS-15 GVT72024A8TS-15 TC558128 TC558128 BF ... | Original |
4 pages, |
W24257AJ-12 LAN91C100FD IS61C3216-15T CY7C199-35VC CY7C199-15VC CY7C199-12VC AS7C256-15 SA15Y B/LAN91C110 LAN91C100FD abstract |
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| Abstract: SBT Cypress SB61L256A SB61L256A CY7C199 Alliance AS7C256A AS7C256A AS7C3256A AS7C3256A AMIC A615308 A615308 LP61L256 LP61L256 ... | Original |
2 pages, |
BS616LV4017 cross reference SAMSUNG Cross Reference LYONTEK BS62LV4006 CA0139F LY62256 LY621024 LY61L25616 CS18LV02563 cs18lv02560 A615308 hy628400a IC62LV2568LL LY6264 LY62L64 LY6264 abstract |
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| Abstract: , Read/Write, and address Least Significant Bit (LSB) to generate the /WE and /OE for the CY7C199 SRAM , bus, which becomes the address for the CY7C199, is written into the FCT377 FCT377 latches. Writing data to , active, and the data on the EXT15 EXT15:0 bus is written into the CY7C199. Note: Do not use EXT7 since it is , have at least 7 ns set-up time and 0.2 ns hold time. The CY7C199-10 requires 5 ns set-up time and 0 , The Z893X1 Z893X1 requires 14 ns set-up and 6 ns hold time from /DS rising edge. The CY7C199-10 has an /OE ... | Original |
6 pages, |
Z893X1 CY7C199 74F169 512-WORD Z893X1 abstract |
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| Abstract: inputs and outputs • Automatic power-down when deselected Functional Description The CY7C199 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is CY7C199 32K x 8 , deselected. The CY7C199 is in the standard 300-mil-wide DIP, SOJ, and LCC packages. An active LOW write , By Its Respective Manufacturer CY7C199 Maximum Ratings (Above which the useful life may be , Its Respective Manufacturer CY7C199 Parameter Description Test Conditions 7C199-20 7C199-20 7C199-25 7C199-25 ... | OCR Scan |
13 pages, |
CY7C199 A14C A12C A10C 7C199-8 7C199-15 7C199-12 7C199-10 CY7C199-15DMB datasheet abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| CY7C199-45LC | Cypress Semiconductor | General-Purpose Static RAM - Automatic Power Down | |
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| CY7C199-45LMB(SMD) | Cypress Semiconductor | General-Purpose Static RAM - Automatic Power Down | |
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| CY7C199-45PC | Cypress Semiconductor | General-Purpose Static RAM - Automatic Pwr Down,300-mil | |
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| CY7C199-45VC | Cypress Semiconductor | General-Purpose Static RAM - Automatic Power Down | |
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| CY7C199-55DC | Cypress Semiconductor | General-Purpose Static RAM - Automatic Pwr Down,300-mil | |
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| CY7C199-55DMB | Cypress Semiconductor | General-Purpose Static RAM - Automatic Pwr Down,300-mil | |
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| CY7C199-55DMB(SMD) | Cypress Semiconductor | General-Purpose Static RAM - Automatic Pwr Down,300-mil | |
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| CY7C199-55KMB | Cypress Semiconductor | General-Purpose Static RAM - Automatic Pwr Down,300-mil | |
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| CY7C199-55KMB(SMD) | Cypress Semiconductor | General-Purpose Static RAM - Automatic Pwr Down,300-mil | |
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| CY7C199-55LC | Cypress Semiconductor | General-Purpose Static RAM - Automatic Power Down | |
| GSI Technology Part | Industry Part | Manufacturer |
| GS8182S36BGD-300 Buy | CY7C1994BV18-278BZXC Buy | Cypress Semiconductor |
| GS8182S36BGD-300 Buy | CY7C1994BV18-300BZXC Buy | Cypress Semiconductor |
| ISSI Part | Industry Part | Manufacturer | Description |
| IS61C256AH-12T Buy | CY7C199-12ZC Buy | Cypress Semiconductor | 256Kb (32K x 8) 5v Asynchronous SRAM |
| IS61C256AH-12T Buy | CY7C199B-12ZC Buy | Cypress Semiconductor | 256Kb (32K x 8) 5v Asynchronous SRAM |
| IS61C256AH-12T Buy | CY7C199BL-12ZC Buy | Cypress Semiconductor | 256Kb (32K x 8) 5v Asynchronous SRAM |
| IS61C256AH-12T Buy | CY7C199L-12ZC Buy | Cypress Semiconductor | 256Kb (32K x 8) 5v Asynchronous SRAM |
| IS61C256AH-12TI Buy | CY7C199-12ZI Buy | Cypress Semiconductor | 256Kb (32K x 8) 5v Asynchronous SRAM |
| IS61C256AH-12TI Buy | CY7C199B-12ZI Buy | Cypress Semiconductor | 256Kb (32K x 8) 5v Asynchronous SRAM |
| IS61C256AH-12TI Buy | CY7C199BL-12ZI Buy | Cypress Semiconductor | 256Kb (32K x 8) 5v Asynchronous SRAM |
| IS61C256AH-12TI Buy | CY7C199L-12ZI Buy | Cypress Semiconductor | 256Kb (32K x 8) 5v Asynchronous SRAM |
| IS61C256AH-15J Buy | CY7C199-15PC Buy | Cypress Semiconductor | 256Kb (32K x 8) 5v Asynchronous SRAM *(Packages differ--Close |
| IS61C256AH-15J Buy | CY7C199-15VC Buy | Cypress Semiconductor | 256Kb (32K x 8) 5v Asynchronous SRAM |