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3SK294(TE85L,F) Toshiba America Electronic Components Trans MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R visit Digikey Buy

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Part : 3SK294(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 2,900 Best Price : $0.7440 Price Each : $0.7440
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3SK294 Datasheet

Part Manufacturer Description PDF Type
3SK294 Toshiba 3SK294 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-2K1B, 4 PIN, FET RF Small Signal Original
3SK294 Toshiba Field Effect Transistor Silicon N Channel Dual Gate MOS Type Scan
3SK294 Toshiba Silicon N-channel dual gate MOS type field effect transistor for TV tuner VHF RF applications Scan
3SK294(TE85L,F) Toshiba 3SK294 - Trans MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R Original
3SK294TE85LF Toshiba 3SK294TE85LF - Trans MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R Original

3SK294

Catalog Datasheet MFG & Type PDF Document Tags

3SK294

Abstract: TOSHIBA 3SK294 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK294 TV TUNER, VHF RF AMPLIFIER APPLICATION Unit in mm â'¢ Superior Cross Modulation Performance â'¢ Low Reverse , subject to change without notice. 1998-03-12 1/4 TOSHIBA 3SK294 Fig. 1 Gps/NF TEST CIRCUIT INPUT rg = 50n , ., Ltd.) RFC 1 : /0.35mm VEW 3I.D.7T RFC 2 : /0.35mm VEW 3I.D.10T 1998-03-12 2/4 TOSHIBA 3SK294 id - vds , 16 DRAIN CURRENT ID (mA) 20 1998-03-12 3/4 TOSHIBA 3SK294 Gps, NF - YDS
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OCR Scan
500MH
Abstract: TO SHIBA 3SK294 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK294 Unit in mm TV TUNER, VHF RF AM PLIFIER APPLICATION â'¢ Superior Cross Modulation , contained herein is subject to change w ith o u t notice. 1998 03-12 - 1/4 TO SHIBA 3SK294 , TRANSFER ADMITTANCE lYfsl -
OCR Scan
100//AV TTA25A200A

3SK294

Abstract: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm · Superior cross modulation performance · Low reverse transfer capacitance: Crss = 20 fF (typ.) · Low noise figure: NF = 1.4dB (typ.) Absolute , , VG2S = 4.5 V, ID = 10 mA, f = 500 MHz 1 2007-11-01 3SK294 L1~L4: 0.8 mm silver plated , V 2 2 2007-11-01 3SK294 3 2007-11-01 3SK294 4 2007-11-01 3SK294
Toshiba
Original
Abstract: TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR 3SK294 SILICON N-CHANNEL DUAL GATE MOS TYPE TV TUNER, VHF RF AMPLIFIER APPLICATION 3SK294 : Crss -20fF (Typ.) : NF = 1.4dB (Typ.) r*- Unit in , change without notice. 1998 03-12 1/4 - TO SH IB A 3SK294 Fig. 1 Gps/NF TEST CIRCUIT , ) DRAIN CURRENT Iq , h g Ifl s g g M h « -
OCR Scan
100//A
Abstract: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm â'¢ Superior cross modulation performance â'¢ Low , mA, f = 500 MHz (Figure 1) Start of commercial production 1996-10 1 2014-03-01 3SK294 , Circuit Marking 4 3 Type name U 1 V 2 2 2014-03-01 3SK294 3 2014-03-01 3SK294 4 2014-03-01 3SK294 RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its Toshiba
Original
Abstract: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application · · · Superior cross modulation performance Low reverse transfer capacitance: Crss = 20 fF (typ.) Low noise figure: NF = 1.4dB (typ.) Unit: mm Absolute Maximum Ratings (Ta , VDS = 6 V, VG2S = 4.5 V, ID = 10 mA, f = 500 MHz 1 2007-05-08 3SK294 L1~L4: 0.8 mm silver , 1 2 2 2007-05-08 3SK294 3 2007-05-08 3SK294 4 2007-05-08 3SK294 Toshiba
Original
Abstract: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm â'¢ Superior cross modulation performance â'¢ Low reverse transfer capacitance: Crss = 20 fF (typ.) â'¢ Low noise figure: NF = 1.4dB (typ , mA, f = 500 MHz (Figure 1) 1 2010-06-30 3SK294 L1 to L4: Ï0.8 mm silver plated copper , 1 V 2 2 2010-06-30 3SK294 3 2010-06-30 3SK294 4 2010-06-30 3SK294 Toshiba
Original

3SK294

Abstract: TOSHIBA 3SK294 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK294 TV TUNER, VHF RF AMPLIFIER APPLICATION Unit in mm â'¢ Superior Cross Modulation Performance â , made at the customer's own risk. 2000-09-11 1/4 TOSHIBA 3SK294 Fig. 1 Gps/NF TEST CIRCUIT INPUT , The information contained herein is subject to change without notice. 2000-09-11 2/4 TOSHIBA 3SK294 , 1 k \ I 0 4 8 12 16 DRAIN CURRENT ID (mA) 20 2000-09-11 3/4 TOSHIBA 3SK294
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OCR Scan

trimmer 20pF

Abstract: 3SK294 TOSHIBA 3SK294 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK294 TV TUNER, VHF RF AMPLIFIER APPLICATION Wi : mm â'¢ Superior Cross Modulation Performance â'¢ Low , others. # The information contained herein is subject to change without notice. 917 TOSHIBA 3SK294 , .D.7T RFC 2 : /0.35mm VEW 3I.D.10T 918 TOSHIBA 3SK294 id - vds COMMON SOURCE VG2S = 4.5V Ta = 25 , TOSHIBA 3SK294 Gps, NF - YDS ¡JO VG2S =
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OCR Scan
trimmer 20pF 800MH

3SK294

Abstract: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm · Superior cross modulation performance · Low , , VG2S = 4.5 V, ID = 10 mA, f = 500 MHz (Figure 1) 1 2010-06-30 3SK294 L1 to L4: 0.8 mm , name U 1 V 2 2 2010-06-30 3SK294 3 2010-06-30 3SK294 4 2010-06-30 3SK294 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates
Toshiba
Original

3SK294

Abstract: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm · Superior cross modulation performance · Low , dB 1 2003-04-04 3SK294 L1~L4: f0.8 mm silver plated copper wire C: Air trimmer , Figure 1 Gps, NF Test Circuit Marking 2 2003-04-04 3SK294 3 2003-04-04 3SK294 4 2003-04-04 3SK294 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually
Toshiba
Original
Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR 3SK294 SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK294 TV TUNER, VHF RF AM PLIFIER APPLICATION Unit in mm r*- · · · Superior Cross Modulation , to ch a n g e w ith o u t notice. 1997 08-30 1/4 - TOSHIBA 3SK294 Fig. 1 G ps/NF TEST , ) 3SK294 3/4 TOSHIBA INPUT CAPACITANCE Ciss V £ ? il , 08-30 4/4 - < < s % o I f l h « ° i l « < NF £ 3SK294 NOISE FIGURE NF (dB) -
OCR Scan

TA4029CTC

Abstract: TA4032FT MT3S20R MT3S20P MT3S21P MT3S22P 2SC5087 2SC5087R 3SK291 3SK292 3SK293 3SK294 MT4S03BU MT4S24U , , Mix, VCO and Driver Amp (Dual Gate MOSFET) SMQ USQ VHF 3SK292 3SK291 3SK294 3SK293 , Max PD VDS (V) VHF RF, MIX ID 3SK292 3SK294 3SK291 3SK293 12.5 12.5 (mA
Toshiba
Original
TA4029CTC TA4029TU TB7601TU TB7602TU TA4032FT MT4S300T MT4S300U MT4S301T JDH2S04FS JDH3D01FV TCX4A02WBG TB7600CTC TB7601CTC

FET K161

Abstract: Transistor C2216 3SK293 UF 798 MT4S100U P6 628 3SK294 UV 804 MT4S101T P7 631 MT3S03AFS , RF MOS 3SK225 3SK226 Bipolar 2SC3123 3SK258 3SK292 VHF 3SK257 3SK294 , 2SC1815 2SC2458 2SC2712 2SC380TM IF 2SC4915 Dual Gate MOS Bipolar OSC 3SK294 , 4.5 500 SMQ 3SK294 12.5 30 100 0~0.1 6 0/4.5 23.5 6 10 4.5
Toshiba
Original
FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 050106DAD1 2SC382TM 2SC2114 2SK2497 2SC384 2SC1923

MT4S300T

Abstract: TA4032FT MT3S20TU MT3S20R MT3S20P MT3S21P MT3S22P 2SC5087 2SC5087R 3SK291 3SK292 3SK293 3SK294 MT4S03BU , VHF 3SK292 3SK291 3SK294 3SK293 UHF Diodes Application PIN Band SW Varicap S-FLAT , PD VDS (V) VHF RF, MIX UHF RF, MIX 3SK292 3SK294 3SK291 3SK293 12.5 12.5 (mA
Toshiba
Original
MT3S111TU JAPANESE 2SC TRANSISTOR 2010 TB7602CTC JAPANESE TRANSISTOR 2SC 2010 MT3S111P 2sk3476 BCE0003F

3sk catalog

Abstract: 3SK291 3SK292 3SK293 3SK294 MT4S03BU MT4S24U MT4S23U MT4S300U MT4S300T MT4S301U MT4S301T , ) ANT SW Application SMQ USQ Application VHF 3SK292 3SK291 3SK294 3SK293 USC , ) VHF RF, MIX UHF RF, MIX 3SK292 3SK294 3SK291 3SK293 12.5 12.5 (mA) (mW) 30 30 150
Toshiba
Original
3sk catalog JDH2S02FS TCX4A01WBG BCE0003H

JDV2S31CT

Abstract: 2SK1875 3SK294 MGC TU6 SM8 TA4017FT AGC SM8 TA4018F MGC IF Amp 1SV290B , S-Mini USM VHFUHF FET VDS UHF RF, MIX PD 3SK292 3SK294 3SK291 3SK293 12.5
Toshiba
Original
JDV2S31CT 2SK1875 1SV283B 1SV271 antenna CDMA GPRS 2SK3078 CST16 BCJ0003F BCJ0003E

3SK73

Abstract: 3SK121 3SK294 VHF (wide band) RF Amp Dual Gate FET SMQ 3SK199 3SK207 3SK232 3SK291 USQ 3SK256 , 3SK292 USQ MT4S03A MT4S04A MT4S06 MT4S07 SMQ 3SK249 3SK293 3SK294 2
Toshiba
Original
2SC2328 3SK73 3SK78 3SK101 3SK112 3SK114 3SK121 S-AV24 TOSHIBA RF Power Module S-AV24 2SC2115 2SK2856 2SC385 2SC2349 2SK3276

TA1343NG

Abstract: TB1318FG UHF Dual-gate FET 3SK294 3SK291 1SV242 1SS295 (dual) 1SS315 JDH3D01S (dual) JDH2S01FS
Toshiba
Original
TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TA1375FG TA1396FG SSOP24 TA1398FNG LQFP48 TA1395FNG

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 3SK257 3SK258 3SK294 VHF (wide band) RF Amp Dual Gate FET SMQ 3SK199 3SK207 3SK232 3SK291 , SMQ 3SK249 3SK293 3SK294 2'nd OSC Bipolar transistor *: 33 USC
Toshiba
Original
2SC386A diode varicap BB 112 varicap v147 2SK1310 2sc5066 V101 varicap diode 1SS154 2SC385A 2SC2395 3SK22 2SC385ATM 2SC2531

TB1253N

Abstract: TB1240 1SV216 SMQ 3SK195 3SK225 3SK226 3SK292 3SK259 3SK257 3SK258 3SK294 USQ USM 2SC4250
Toshiba
Original
TB1253N TB1240 TA8792N TA8792 tb1238 f062dsl TA1231F/FN SSOP16 TA1281FN TA1303AFN SSOP30 TA1324FN
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