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Part : CA3SK20JD Supplier : Schneider Electric Manufacturer : RS Components Stock : 3 Best Price : £37.5800 Price Each : £41.75
Part : 3SK233XWTL6D4 Supplier : Hitachi Manufacturer : ComSIT Stock : 2,760 Best Price : - Price Each : -
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Part : 3SK293(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 15,000 Best Price : $0.1134 Price Each : $0.1134
Part : 3SK294(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 2,900 Best Price : $0.7440 Price Each : $0.7440
Part : CA3SK20BD Supplier : Schneider Electric Manufacturer : element14 Asia-Pacific Stock : - Best Price : $56.03 Price Each : $65.1840
Part : CA3SK20BD. Supplier : Schneider Electric Manufacturer : element14 Asia-Pacific Stock : - Best Price : $44.74 Price Each : $52.0560
Part : RAC10-3.3SK/277 Supplier : RECOM Manufacturer : element14 Asia-Pacific Stock : 15 Best Price : $12.78 Price Each : $14.5360
Part : RAC10-3.3SK/277 Supplier : RECOM Manufacturer : Farnell element14 Stock : 15 Best Price : £8.73 Price Each : £9.93
Part : RAC10-3.3SK/277 Supplier : RECOM Manufacturer : New Advantage Stock : 15 Best Price : $12.91 Price Each : $12.91
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Part : RAC10-3.3SK/277 Supplier : RECOM Manufacturer : Symmetry Electronics Stock : 1 Best Price : $10.62 Price Each : $10.62
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3SK249 Datasheet

Part Manufacturer Description PDF Type
3SK249 Toshiba Field Effect Transistor, TV Tuner, UHF RF Amplifier Applications Original
3SK249 N/A High Frequency Device Data Book (Japanese) Scan
3SK249 Toshiba Field Effect Transistor Silicon N Channel Dual Gate MOS Type Scan
3SK249 Toshiba N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) Scan

3SK249

Catalog Datasheet MFG & Type PDF Document Tags

3SK249

Abstract: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 , â'" dB Noise Figure NF â'" 1.5 2.5 1 2001-05-31 TOSHIBA 3SK249 Fig.l Gps, NF Test Circuit l , , 10T 2 2001-05-31 TOSHIBA 3SK249 id - vds id - vds COMMON SOURCE VG2S = 4.5V Ta = 25°C _ 4 , ID (mA) 20 3 2001-05-31 TOSHIBA 3SK249 Gps, NF - VDS Gps, NF - ID 2 4 6 8 10 DRAIN-SOURCE , 0 2 4 6 8 10 OUTPUT CONDUCTANCE gos (mS) 12 4 2001-05-31 TOSHIBA 3SK249 PD - Ta 5 2001-05-31
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OCR Scan

MARKING N2

Abstract: 3SK249 TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 , Reliability Handbook. 862 TOSHIBA 3SK249 INPUT Rn = 50 ù â'"- SHIELD OUTPUT RL = 50O L2 # Ll l , The information contained herein is subject to change without notice. 863 TOSHIBA 3SK249 id - vds , V1'5 0 4 8 12 16 20 DRAIN CURRENT ID (mA) 864 TOSHIBA 3SK249 Gps, NF - VDS , 4 3 2 1 0 -2 0 2 4 6 8 10 12 OUTPUT CONDUCTANCE gos (mS) 865 TOSHIBA 3SK249 PD - Ta 866
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OCR Scan
MARKING N2 800MH
Abstract: 3SK249 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 TV Tuner, UHF RF Amplifier Applications · · · Superior cross modulation performance. Low reverse transfer , ±50 ±50 0.1 1.4 1.5 2.1 40 2.5 Unit nA nA V mA V V mS pF fF dB dB 1 2007-11-01 3SK249 , Test Circuit Marking 2 2007-11-01 3SK249 3 2007-11-01 3SK249 4 2007-11-01 3SK249 5 2007-11-01 3SK249 RESTRICTIONS ON PRODUCT USE · The information contained herein Toshiba
Original

3SK249

Abstract: 3SK249 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low , ¾ 1.5 2.5 dB Drain current 1 2003-04-04 3SK249 L1~L4: f0.8 mm silver plated , 2 2003-04-04 3SK249 3 2003-04-04 3SK249 4 2003-04-04 3SK249 5 2003-04-04 3SK249 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to
Toshiba
Original

l20pF

Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 3SK249 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm 2. 1+0. 1 · Superior Cross Modulation Performance. · Low Reverse Transfer Capacitance. : Crss = 20fF (Typ.) · Low Noise Figure. : NF=1.5dB (Typ , in the TOSH IBA Sem iconductor Reliability Handbook. 862 TOSHIBA 3SK249 INPUT RG = 50H , * < HS O NO j Z< * < 3SK249 NOISE FIGURE NF (dB) TOSHIBA 3SK249 P o - Ta 866
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OCR Scan
l20pF 961001EAA2

3SK249

Abstract: marking L4 toshiba 3SK249 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low , Drain current 1 2003-04-04 3SK249 L1~L4: 0.8 mm silver plated copper wire C: Air trimmer , wire 3 mm ID, 10 T Figure 1 Gps, NF Test Circuit Marking 2 2003-04-04 3SK249 3 2003-04-04 3SK249 4 2003-04-04 3SK249 5 2003-04-04 3SK249 RESTRICTIONS ON PRODUCT
Toshiba
Original
marking L4 toshiba

3SK249

Abstract: 3SK249 · · · SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR T V TU N E R , UHF , 768 3SK249 INPUT SHIELD OUTPUT CASE VG1S L !~ L 4 C RFC 1 RFC 2 : : : : j*0.8min , N C E jYfsi im S i , 1 i1 ' ?
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OCR Scan
TTA25A200A
Abstract: TO SHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 TV TUNER, UHF RF AM PLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 â'¢ Superior Cross , - 06-23 1/5 TO SHIBA 3SK249 F ig .l GpS, NF Test Circuit INPUT OUTPUT RL = 50 fl , O R < o ui to O c¡S O R < ü Ul < ö W 3SK249 INPUT SUSCEPTANCE , (dB) 1 3SK249 h 1 o a ai o < 03 gso go o o il 1 to q W II a g ffl S ° N« HZ 3 8 -
OCR Scan
100//A

3SK249

Abstract: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 TV TUNER , TOSHIBA 3SK249 Fig.l Gps, NF Test Circuit l~20pF Li~L4 C RFC 1 RFC 2 INPUT Rn = 50n â'"- SHIELD OUTPUT Rl , TOSHIBA 3SK249 id - VDS id - VDS 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) 50 40 30 20 10 01 COMMON SOURCE , 16 20 DRAIN CURRENT ID (mA) 1998-06-23 3/5 TOSHIBA 3SK249 Gps, NF - VDS Gps, NF - ID 2 4 6 8 10 , U.l i -2 0 2 4 6 8 10 OUTPUT CONDUCTANCE gos (mS) 12 1998-06-23 4/5 TOSHIBA 3SK249 PD - Ta
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OCR Scan

SK249

Abstract: TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 3 S , T O SH IB A 3SK249 IN P U T Ro= 5on Ll L2 A - SHIELD L3 _r è f O U TPU T R L = 50í 1 , TO SH IB A 3SK249 id - vds id - vos D R A IN - S O U R C E V O L T A G E Vpg , 3/5 TO SH IB A 3SK249 Gps, NF - VDS Gps, NF - ID 1 G PS COMMON SO URCE V d S , 3SK249 PB - Ta A M B IE N T T E M P E R A T U R E Ta (°C ) 1997 05-12 - 5/5
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OCR Scan
SK249

2SC2348

Abstract: 2SC2347 -61) 3SK207 3SK232 #3SK240 #3SK250 3SK249 3SK259 #3SK274 #3SK275 TA4006F USQ 3SK256 SM V SM C use ssc
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OCR Scan
3SK146 2SC2347 2SC2348 1SV259 1SV211 2SC382 SC-59 SC-70 3SK153 2SC3828 2SC4214

GI 242

Abstract: 3SK232 =6V,VG2S4. 5V, 800MHz H d VgS=VG1S=VG2S NF(dB) 1.40 2.50 Vds=6V. Vg2s4. 5V, 800MHz â'¢3SK249 SS
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OCR Scan
GI 242 470MH 900MH 100MH

3SK275

Abstract: transistor TT fet Remarks MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET GaAs MES FET GaAs MES FET 3SK249 3SK256 3SK257
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OCR Scan
transistor TT fet 2sk882 C439-4 FR90 2SC4116 2SA1586 2SC4117 2SA1587 2SA1015 2SC1815

FET K161

Abstract: Transistor C2216 UO 750 MT3S45T R4 607 3SK249 UO 753 MT4S03A MR 610 3SK256 UR , .) USQ PW-Mini 3SK199 3SK207 3SK232 Bipolar UHF 3SK249 3SK291 RF 3SK256 , 6 10 4.5 20/1.5 6 10 4.5 800 SMQ 3SK249 12.5 30 100 0~0.1 , (3SK256) 1 (3SK249) 3SK232 0 50 70 100 200 300 f (MHz) 40 500 700
Toshiba
Original
FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 050106DAD1 2SC382TM 2SC2114 2SK2497 2SC384 2SC1923

k192a

Abstract: c2458 3SK226 3SK232 3SK240 3SK249 3SK256 3SK257 3SK258 3SK259 3SK260 3SK274 3SK283 3SK284 HN3C01F HN3C02F
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OCR Scan
1SS371 1V02H C2216 C2347 C2498 C2499 c2458 C2668 C2717 C1923 Y 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269

SV153A

Abstract: Sv153 «3SK274 I3SK283 #3SK284 * 3SK259 3SK146 3SK199 * 3SK257 3SK207 * 3SK256 * 3SK258 3SK232 * 3SK249 USQ sm q
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OCR Scan
2SC491 4007F 1SV103 SK192A SV153A Sv153 varicap diode 1SV226 2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172

high frequency diode

Abstract: 15536-1 3SK250 USQ 3SK249 3SK256 3SK259 3SK274 3SK275 Sm all Product SSM 2SC4915 19 1. Using Device
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OCR Scan
high frequency diode 15536-1 1SS1 A1873 flowchart RN1421 RN2421 2SC2873 2SA1213 2SC3074 2SC3072

2N3904 331 transistor

Abstract: C549 transistor 3SK160 3SK195 3SK199 3SK207 3SK225 3SK226 3SK232 3SK240 3SK249 3SK250 3SK256 3SK257 device. Page -
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OCR Scan
02CZ2 02CZ5 02CZ6 02CZ27 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 2N5551 2SC1815 2SK246 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124

3SK73

Abstract: 3SK121 3SK249 3SK293 USQ 3SK260 3SK259 UHF VHF and Wide Band VHF Dual Gate FET S-MINI USC , Pack 3SK249 3SK293 SM8 TA4107F MT3S03A MT3S04A SMQ MT4S03A MT4S04A , 3SK292 USQ MT4S03A MT4S04A MT4S06 MT4S07 SMQ 3SK249 3SK293 3SK294 2
Toshiba
Original
2SC2328 3SK73 3SK78 3SK101 3SK112 3SK114 3SK121 S-AV24 TOSHIBA RF Power Module S-AV24 2SC2115 2SK2856 2SC385 2SC2349 2SK3276

2sc 1203

Abstract: 2sa 1300 equivalent * 3SK127 3SK146 3SK153 3SK199 3SK207* 3SK232* 2SC3828 2SC4214 * * 3SK249* 3SK256* RF MOS
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OCR Scan
2sc 1203 2sa 1300 equivalent 2Sc1923 equivalent 2SK241 equivalent 2SC 1902 2sc1815 equivalent 1815L 2SC2240 2SC1627 2SC752G 2SC2713 2SC4210
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