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Part : E39-E10 Supplier : OMRON Manufacturer : Avnet Stock : - Best Price : $32.79 Price Each : $40.49
Part : RD3.9E(10)-T2-AZ Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 10,000 Best Price : $0.04 Price Each : $0.05
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Part : 239E1025 Supplier : Vishay Sprague Manufacturer : Bristol Electronics Stock : 14 Best Price : $4.48 Price Each : $8.96
Part : 239E1015 Supplier : Vishay Sprague Manufacturer : basicEparts Stock : 490 Best Price : - Price Each : -
Part : 239E1025 Supplier : Vishay Sprague Manufacturer : basicEparts Stock : 3,000 Best Price : - Price Each : -
Part : E39-E10 Supplier : OMRON Manufacturer : Sager Stock : - Best Price : $31.60 Price Each : $34.93
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39E-10

Catalog Datasheet MFG & Type PDF Document Tags

10E2 diode

Abstract: FQD60N03L 5.0e-10 CB 15 14 3.9e-10 CIN 6 8 7.8e-10 RLSOURCE S1A 12 S2A S1B CA 15 14 13 13 8 , = 4.53e-9 l.lsource n3 n7 = 5.38e-10 2 10 c.ca n12 n8 = 5.0e-10 c.cb n15 n14 = 3.9e-10
Fairchild Semiconductor
Original
FQD60N03L 10E2 diode

N315AD

Abstract: NL-11 DRAIN 2 5 + .SUBCKT ISL9N315AD3 2 1 3 ; CA 12 8 5.0e-10 CB 15 14 3.9e-10 CIN 6 8 7.8e-10 , = 4.53e-9 l.lsource n3 n7 = 5.38e-10 2 10 c.ca n12 n8 = 5.0e-10 c.cb n15 n14 = 3.9e-10
Fairchild Semiconductor
Original
ISL9N315AD3ST N315AD NL-11 kp35 n315

FQD60N03L

Abstract: .SUBCKT FQD60N03L 2 1 3 ; CA 12 8 5.0e-10 CB 15 14 3.9e-10 CIN 6 8 7.8e-10 rev June 02 LDRAIN , 3.9e-10 c.cin n6 n8 = 7.8e-10 15 17 18 RVTEMP CB + + 6 8 EGS - RLSOURCE
Fairchild Semiconductor
Original

marking m062

Abstract: 5.0e-10 CB 15 14 3.9e-10 CIN 6 8 7.8e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD , 1e-5, roff = 0.1, von = 0.3, voff = -0.5) DPLCAP 5 DRAIN c.ca n12 n8 = 5.0e-10 c.cb n15 n14 = 3.9e-10
Fairchild Semiconductor
Original
marking m062

n318ad

Abstract: ISL9N318AD3ST 15 14 3.9e-10 CIN 6 8 7.8e-10 RLSOURCE S1A 12 S2A 13 8 14 13 S1B CA RBREAK , = 4.53e-9 l.lsource n3 n7 = 5.38e-10 2 10 c.ca n12 n8 = 5.0e-10 c.cb n15 n14 = 3.9e-10
Fairchild Semiconductor
Original
ISL9N318AD3ST n318ad

n318ad

Abstract: ISL9N318AD3ST 15 14 3.9e-10 CIN 6 8 7.8e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK , c.cb n15 n14 = 3.9e-10 c.cin n6 n8 = 7.8e-10 dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 =
Fairchild Semiconductor
Original

AN7254

Abstract: AN7260 1.1e-3 TRS2 = 2.0e-6 IKF= 2.3 XTI = 0 N=1.12 CJO = 3.9e-10 TT = 8.0e-9 M = 0.43) .MODEL DBREAKMOD D (RS , = 2.0e-10, rs = 1.34e-2, trs1 = 1.1e-3, trs2 = 2.0e-6, ikf = 2.3, xti = 0, cjo = 3.9e-10, tt =
Intersil
Original
ITF87008DQT ITF87008DQT2 AN7254 AN7260 TB370 EIA-481 ISO9000

67E4

Abstract: AN7254 1.1e-3 TRS2 = 2.0e-6 IKF= 2.3 XTI = 0 N=1.12 CJO = 3.9e-10 TT = 8.0e-9 M = 0.43) .MODEL DBREAKMOD D (RS , 2.0e-6, ikf = 2.3, xti = 0, cjo = 3.9e-10, tt = 8.0e-9, nl = 1.12, m = 0.43) dp.model dbreakmod = (rs =
Fairchild Semiconductor
Original
67E4

AN7254

Abstract: AN7260 IKF= 2.3 XTI = 0 N=1.12 CJO = 3.9e-10 TT = 8.0e-9 M = 0.43) .MODEL DBREAKMOD D (RS = 2.3e-1 TRS1 = , , xti = 0, cjo = 3.9e-10, tt = 8.0e-9, nl = 1.12, m = 0.43) dp.model dbreakmod = (rs = 2.3e-1, trs1 =
Fairchild Semiconductor
Original

AN7254

Abstract: AN7260 IKF= 2.3 XTI = 0 N=1.12 CJO = 3.9e-10 TT = 8.0e-9 M = 0.43) .MODEL DBREAKMOD D (RS = 2.3e-1 TRS1 = , , trs1 = 1.1e-3, trs2 = 2.0e-6, ikf = 2.3, xti = 0, cjo = 3.9e-10, tt = 8.0e-9, nl = 1.12, m = 0.43
Intersil
Original

Li ION spice model charge

Abstract: 67e4 = 0 N=1.12 CJO = 3.9e-10 TT = 8.0e-9 M = 0.43) .MODEL DBREAKMOD D (RS = 2.3e-1 TRS1 = 4.0e-3 TRS2 = , 2.0e-6, ikf = 2.3, xti = 0, cjo = 3.9e-10, tt = 8.0e-9, nl = 1.12, m = 0.43) dp.model dbreakmod = (rs =
-
OCR Scan
Li ION spice model charge IS09000

39e6

Abstract: RFT1P06E LSOURCE 3 7 3.9e-10 DBREAK LSOURCE CIN RSOURCE 8 SOURCE 3 7 RLSOURCE S1A 12 13
Intersil
Original
RFT1P06E TB334 39e6 TA49044 R1P06E

Plasma Etch Induced Surface Damage and Its Impacts on GaAs Schottky Diodes

Abstract: damage removal the surface states density is 8.0E10 cm-2 for the 450 W wafer, compared to only 3.9E10 cm
Skyworks Solutions
Original
Plasma Etch Induced Surface Damage and Its Impacts on GaAs Schottky Diodes

63E07

Abstract: 31 band graphic equalizer 3.9E-09 3.3E-09 2.4E-09 2.0E-09 1.6E-09 1.3E-09 1.0E-09 8.2E-10 6.8E-10 5.1E-10 3.9E-10 C2
Texas Instruments
Original
63E07 31 band graphic equalizer mfb bandpass filter Graphic Equalizer Audio Amplifiers audio circuit collection 85E-11 C011905 SLYT134

AN7254

Abstract: AN7260 ) LDRAIN DRAIN 2 5 RSLC1 51 RLDRAIN RDBREAK RSLC2 c.ca n12 n8 = 3.9e-10 c.cb n15 n14 =
Intersil
Original
HUF76407P3 AN9321 AN9322 76407P
Abstract: ) sw_vcsp.model s2bmod = (ron = 1e-5, roff = 0.1, von = 0, voff = -0.5) c.ca n12 n8 = 3.9e-10 c.cb n15 n14 = Intersil
Original
HUFA76407P3

p06e

Abstract: Mosfet Sot223 7 3.9e-10 RLSOURCE S1A 12 13 8 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21
Intersil
Original
p06e Mosfet Sot223

SOT223 package

Abstract: 6 20 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 1.73e-9 LSOURCE 3 7 3.9e-10 MMED 16 6 8 8 MMEDMOD
Harris Semiconductor
Original
SOT223 package 1-800-4-HARRIS

SRAM Cross References

Abstract: UT9Q512K8 3.9E-10 8.3E-09 1.7E-08 1.7E-08 3.0E-11 3.1E-10 1.1E-08 1.3E-08 1.6E-08 1.4E-08 1.6E-11 3.3E-10
Aeroflex
Original
UT8Q512K8 SRAM Cross References UT9Q512K8 SRAM SAMSUNG 36E-4 weibull test data 6ZVL04 14E-8 5E-11 0E-11 5E-09
Abstract: ) c.ca n12 n8 = 3.9e-10 c.cb n15 n14 = 4.9e-10 c.cin n6 n8 = 3.25e-10 d.dbody n7 n71 = model=dbodymod Intersil
Original
HUFA76407D3 HUFA76407D3S 76407D HUFA76407D3ST
Abstract: 1 _ m Y \ _ so SOURCE 3 LDRAIN 2 5 1e-9 LGATE 1 9 1,73e-9 LSOURCE 3 7 3.9e-10 RLSOURCE -
OCR Scan

76407D

Abstract: AN7254 s2bmod = (ron = 1e-5, roff = 0.1, von = 0, voff = -0.5) c.ca n12 n8 = 3.9e-10 c.cb n15 n14 = 4.9e-10
Fairchild Semiconductor
Original

76407P

Abstract: AN7254 -0.5) c.ca n12 n8 = 3.9e-10 c.cb n15 n14 = 4.9e-10 c.cin n6 n8 = 3.25e-10 DRAIN 2 RSLC1 51
Fairchild Semiconductor
Original

AN7254

Abstract: AN9321 -0.5) c.ca n12 n8 = 3.9e-10 c.cb n15 n14 = 4.9e-10 c.cin n6 n8 = 3.25e-10 RSLC1 51 RSLC2
Fairchild Semiconductor
Original
pspice model list
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