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3904+TRANSISTOR+PNP

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Abstract: 18 TEL:0758-2865088 2865091 FAX:0758-2849749 SOT-89 Plastic-Encapsulate Transistors FHA1213 TRANSISTORPNP FEATURES Power dissipation PCM : 0.5 W Tamb=25 Collector current ICM: -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJTstg: -55 to +150 1. Vout 2.Gnd 3.Vin DEVICE MARKING FHA1213 = NY ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified CLASSIFICATION OF Hfe Rank Range O Y 70~140 120~240 Page 0 Fenghua Advanced Technology
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sot89 sot-89 marking 4 SOT89 sot89 FHA1213 sot 89 sot89 Br
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTORPNP SOT-89 FEATURES Low speed switching 1 2 3 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Jiangsu Changjiang Electronics Technology
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B772 br b772 TRANSISTOR b772 B772 PNP B772 SOT-89 sot 89 b772
Abstract: SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1774 TRANSISTORPNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.15 WTamb=25 Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Symbol Parameter Test 3. COLLECTOR unless otherwise conditions specified MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic -
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Plastic-Encapsulate Transistors
Abstract: SOT-523 Plastic-Encapsulate Transistors SOT-523 MMBT2907AT TRANSISTORPNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.15 WTamb=25 Collector current ICM : -0.6 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol Test 3. COLLECTOR unless otherwise specified conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic -
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marking 2f
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTORPNP TO-92 FEATURE Power dissipation PCM : 0.625 WTamb=25 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range Tj, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 unless Test otherwise specified conditions MIN Jiangsu Changjiang Electronics Technology
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IC 555 270TYP 050TYP
Abstract: SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1832 TRANSISTORPNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.1 WTamb=25 Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Symbol Parameter Test 3. COLLECTOR unless otherwise conditions specified MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC -
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marking SG transistors
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1505 TRANSISTORPNP FEATURES · Excellent hFE linearity: 1. BASE 2. EMITTER 3. COLLECTOR · Complementary to KTC3876 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Jiangsu Changjiang Electronics Technology
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AZY TRANSISTOR
Abstract: @vic AV4403 TO-92 Plastic-Encapsulate Transistors AV4403 TRANSISTORPNP FEATURES Power dissipation PCM : 0.625 Collector current ICM : -0.6 Collector-base voltage V(BR)CBO : -40 TO-92 W Tamb=25 1.EMILTTER A 2.BASE V 3. COLLECTOR 1 2 3 Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Parameter unless Symbol otherwise Test specified conditions MIN MAX UNIT Collector-base Avic Electronics
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datasheet of ic 555 100MH
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