NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: BA6432 370000H-377FFFH 370000H-377FFFH BA109 BA109 32 Kwords 368000H-36FFFFH BA108 BA108 32 Kwords 360000H-367FFFH 360000H-367FFFH BA107 BA107 32 , Kwords 368000H-36FFFFH BA115 BA115 32 Kwords 360000H-367FFFH 360000H-367FFFH BA114 BA114 Bank4 32 Kwords BA127 BA127 ... | Original |
40 pages, |
BA116 BA124 BA133 BA134 ba26 transistor BA102 ba30 transistor Transistor BA21 BA96 SAMSUNG MCP K5T6432YT diode ba102 BA74 BA-51 K5T6432YT abstract |
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| Abstract: BA110 BA110 32 Kwords 370000H-377FFFH 370000H-377FFFH BA109 BA109 32 Kwords 368000H-36FFFFH BA108 BA108 32 Kwords , Kwords 370000H-377FFFH 370000H-377FFFH BA116 BA116 32 Kwords 368000H-36FFFFH BA115 BA115 32 Kwords ... | Original |
39 pages, |
diode ba102 BA134 BA125 Diode BA100 BA102 BA100 diode K5C6481NT K5C6481NT abstract |
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| Abstract: 368000H-36FFFFH BA108 BA108 32 Kwords 360000H-367FFFH 360000H-367FFFH BA107 BA107 32 Kwords 358000H-35FFFFH 358000H-35FFFFH BA106 BA106 32 , Kwords 368000H-36FFFFH BA115 BA115 32 Kwords 360000H-367FFFH 360000H-367FFFH BA114 BA114 Bank4 32 Kwords BA127 BA127 ... | Original |
39 pages, |
BA81 BA114 BA122 BA125 BA125 Diode BA134 bufer SAMSUNG MCP BA102 BA102 diode BA133 diode diode ba102 BA100 diode K5C6417YT K5C6417YT abstract |
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| Abstract: 380000H-387FFFH 380000H-387FFFH 378000H-37FFFFH 378000H-37FFFFH 370000H-377FFFH 370000H-377FFFH 368000H-36FFFFH 360000H-367FFFH 360000H-367FFFH 358000H-35FFFFH 358000H-35FFFFH , 368000H-36FFFFH 360000H-367FFFH 360000H-367FFFH 358000H-35FFFFH 358000H-35FFFFH 350000H-357FFFH 350000H-357FFFH 348000H-34FFFFH 348000H-34FFFFH 340000H-347FFFH 340000H-347FFFH ... | Original |
73 pages, |
wes 237 flash 8m*16bit CEF 83 A 3 MX69LW12832T/B/U/D 128M-BIT 32M-BIT MX69LW12832T/B/U/D abstract |
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| Abstract: 388000H-38FFFFH 388000H-38FFFFH 380000H-387FFFH 380000H-387FFFH 378000H-37FFFFH 378000H-37FFFFH 370000H-377FFFH 370000H-377FFFH 368000H-36FFFFH 360000H-367FFFH 360000H-367FFFH ... | Original |
74 pages, |
FB0000h-FBFFFFh 9F0000h-9FFFFFh MX29LW128T/B/U/D 128M-BIT MX29LW128T/B/U/D abstract |
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| Abstract: 368000h-36FFFFh BA108 BA108 32 Kwords 360000h-367FFFh BA107 BA107 32 Kwords 358000h-35FFFFh BA106 BA106 32 , Kwords 368000h-36FFFFh BA115 BA115 32 Kwords 360000h-367FFFh BA114 BA114 32 Kwords ... | Original |
41 pages, |
samsung nor flash samsung nor BA134 BA127 Diode BA102 K8A6415ET K8A6415ET abstract |
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| Abstract: BA110 BA110 32 Kwords 370000H-377FFFH 370000H-377FFFH BA109 BA109 32 Kwords 368000H-36FFFFH BA108 BA108 32 Kwords , Kwords 370000H-377FFFH 370000H-377FFFH BA116 BA116 32 Kwords 368000H-36FFFFH BA115 BA115 32 Kwords ... | Original |
48 pages, |
MITSUBISHI SR-40 BA127 Diode BA102 transistor sr61 SAMSUNG MCP samsung date code decorder KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M KBA0101A0M abstract |
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| Abstract: M29W640GH M29W640GH, M29W640GL M29W640GL M29W640GT M29W640GT, M29W640GB M29W640GB 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory Feature summary Supply Voltage  VCC = 2.7V to 3.6V for Program, Erase, Read  VPP =12V for Fast Program (optional) Asynchronous Random/Page Read  Page Width: 4 Words  Page Access: 25ns  Random Access: 60ns, 70ns Fast Program commands  2 Words/4 Bytes Program (without VPP=12V)  4 Words/8 Bytes Program (with VPP=12V)  16 Word/32 Byte Write Buffer Program ... | Original |
91 pages, |
TSOP56 M29W640GB M29W640GH 640g morocco TFBGA48 Led matrix 8x8 M29W640GT st m29w640gb M29W640GL M29W640GH/L M29W640GT/B M29W640GH abstract |
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| Abstract: M29W640GH M29W640GH M29W640GL M29W640GL M29W640GT M29W640GT M29W640GB M29W640GB 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory Feature Supply Voltage  VCC = 2.7 to 3.6 V for Program/Erase/Read  VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read  Page Width: 4 words  Page Access: 25 ns  Random Access: 60 ns, 70 ns, 90 ns FBGA TSOP48 TSOP48 (NA) 12 x 20mm FBGA Fast Program commands  2 word/4 byte Program (without VPP=12 V)  4 word/8 byte Program (with VPP=12 V) ... | Original |
90 pages, |
TSOP56 TFBGA48 NUMONYX M29W640GT M29W640GL M29W640GH M29W640GB M29W640G M29W640GH/L M29W640GT/B M29W640GH abstract |
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| Abstract: M29W640GH M29W640GH M29W640GL M29W640GL M29W640GT M29W640GT M29W640GB M29W640GB 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory Feature Supply Voltage  VCC = 2.7 to 3.6 V for Program/Erase/Read  VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read  Page Width: 4 words  Page Access: 25 ns  Random Access: 60 ns, 70 ns, 90 ns TSOP48 TSOP48 (NA) 12 x 20mm Programming time  10 us per byte/word typical  Chip Program time: 10 s (4-word Program) Memory organization  M29W640G M29W640G ... | Original |
90 pages, |
TSOP56 TFBGA48 M29W640GH M29W640GB 640g morocco st m29w640gb M29W640GT M29W640GL M29W640GH/L M29W640GT/B M29W640GH abstract |
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| Abstract: SA540 2003 9 , , , AMD "Am" "MBM" , , AMD DS05�882� DATA SHEET CMOS 64M (4M � 16) MBM29LV650UE90 MBM29LV650UE90 MBM29LV651UE90 MBM29LV651UE90 s MBM29LV650UE/651UE MBM29LV650UE/651UE 67,108,864 bit 3V + EPROM CMOS MBM29LV650UE/651UE MBM29LV650UE/651UE (32K � 128 16bit 4M � 32K 128 TSOP 1 48 ) 1 0.5 1.0 1 MBM29LV650UE/651UE MBM29LV650UE/651UE s MBM29LV650UE90/651UE90 MBM29LV650UE90/651UE90 -40 85 90 ns 3.3 V � 0.3 V 5 MHz 5 ... | Original |
49 pages, |
sa76 DS05 FPT-48P-M19 FPT-48P-M20 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90 SA127 307F marking code M19 datasheet abstract |
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| Abstract: SA1926 S29PL-J S29PL-J 128 / 128 / 64 / 32M 8 / 8 / 4 / 2M Ã- 16 - CMOS 3.0 V / Enhanced VersatileIO TM S29PL-J S29PL-J Cover Sheet (Advance Information) : Spansion ADVANCE INFORMATION PRELIMINARY FULL PRODUCTION S29PL-J S29PL-J_00_J 10 2007 11 2 D a ta S h e e t ( A d va n c e I n fo r m a t i o n ) ADVANCE INFORMATION PRELIMINARY Spansion Advance Information ADVANCE INFORMATION Spansion Inc. ADVANCE INFORMATION Spansion Inc ... | Original |
97 pages, |
S29PL-J Pl064j PL032J AM29PDL SA-194 SA178 SA182 S29PL-J abstract |
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| Abstract: MBM29LV650UE90/MBM29LV651UE90 MBM29LV650UE90/MBM29LV651UE90 ( ) MBM29LV650UE90/MBM29LV651UE90 MBM29LV650UE90/MBM29LV651UE90 Cover Sheet Spansion Spansion Publication Number MBM29LV650UE90/MBM29LV651UE90 MBM29LV650UE90/MBM29LV651UE90 Revision DS05-20882-6 DS05-20882-6 Amendment none Issue Date March 9, 2009 D a ta S h e e t ( R e t i r e d P r o d u c t ) 2 MBM29LV650UE90/MBM29LV651UE90 MBM29LV650UE90/MBM29LV651UE90_DS05-20882-6none March 9, 2009 2003 9 , , , AMD "Am" "MBM" , , AMD DS05�882� DAT ... | Original |
51 pages, |
MBM29LV651UE90 MBM29LV651UE MBM29LV650UE90 MBM29LV650UE Marking code M19 DS05 SA124 MBM29LV650UE90/MBM29LV651UE90 MBM29LV650UE90/MBM29LV651UE90 abstract |
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| Abstract: TC58FVM6 TC58FVM6(T/B)2A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT 64MBIT (8M Ã- 8 BITS/4M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words Ã- 8 bits or as 4194304 words Ã- 16 bits. The TC58FVM6T2A/B2A TC58FVM6T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. ... | Original |
61 pages, |
TC58FVM6T2AFT65 TC58FVM6T2A TC58FVM6B2A TC58 BA134 TOSHIBA TC58 TC58FVM6 64MBIT TC58FVM6T2A/B2A TC58FVM6 abstract |
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| Abstract: TC58FVT641/B641FT/XB-70 TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 64-MBIT (8M Ã- 8 BITS / 4M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words Ã- 8 bits or as 4,194,304 words Ã- 16 bits. The TC58FVT641/B641 TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDE ... | Original |
53 pages, |
diode ba102 BA111 B641 PTFBGA-63 BA102 P-TFBGA63-0911-0 TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 TC58FVT641/B641FT/XB-70 abstract |
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| Abstract: TC58FVM6 TC58FVM6(T/B)2A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT 64MBIT (8M Ã- 8 BITS / 4M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words Ã- 8 bits or as 4194304 words Ã- 16 bits. The TC58FVM6T2A/B2A TC58FVM6T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard ... | Original |
61 pages, |
TC58FVM6T2AFT65 TC58FVM6T2A TC58FVM6B2A TC58 BA102 TC58FVM6 64MBIT TC58FVM6T2A/B2A TC58FVM6 abstract |
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