NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

368000h-36FFFFh

Catalog Datasheet Results Type PDF Document Tags
Abstract: 370000H-377FFFH 370000H-377FFFH BA109 BA109 32 Kwords 368000H-36FFFFH BA108 BA108 32 Kwords 360000H-367FFFH 360000H-367FFFH BA107 BA107 32 , Kwords 368000H-36FFFFH BA115 BA115 32 Kwords 360000H-367FFFH 360000H-367FFFH BA114 BA114 Bank4 32 Kwords BA127 BA127 ... Original
datasheet

40 pages,
595.87 Kb

samsung ba89 DQ15-DQ7 transistor BA29 BA102 diode BA96 Ba91 BA102 BA109 Transistor BA21 BA74 diode ba102 ba38 transistor BA106 BA-51 K5T6432YT K5T6432YT abstract
datasheet frame
Abstract: 368000H-36FFFFH BA108 BA108 32 Kwords 360000H-367FFFH 360000H-367FFFH BA107 BA107 32 Kwords 358000H-35FFFFH 358000H-35FFFFH BA106 BA106 32 , Kwords 368000H-36FFFFH BA115 BA115 32 Kwords 360000H-367FFFH 360000H-367FFFH BA114 BA114 Bank4 32 Kwords BA127 BA127 ... Original
datasheet

39 pages,
585.26 Kb

BA81 BA114 BA122 BA125 BA125 Diode BA134 bufer BA102 SAMSUNG MCP BA102 diode BA133 diode diode ba102 BA100 diode K5C6417YT K5C6417YT abstract
datasheet frame
Abstract: BA110 BA110 32 Kwords 370000H-377FFFH 370000H-377FFFH BA109 BA109 32 Kwords 368000H-36FFFFH BA108 BA108 32 Kwords , Kwords 370000H-377FFFH 370000H-377FFFH BA116 BA116 32 Kwords 368000H-36FFFFH BA115 BA115 32 Kwords ... Original
datasheet

39 pages,
586.16 Kb

diode ba102 BA134 BA125 Diode BA106 BA100 Samsung MCP BA102 BA100 diode K5C6481NT K5C6481NT abstract
datasheet frame
Abstract: 380000H-387FFFH 380000H-387FFFH 378000H-37FFFFH 378000H-37FFFFH 370000H-377FFFH 370000H-377FFFH 368000H-36FFFFH 360000H-367FFFH 360000H-367FFFH 358000H-35FFFFH 358000H-35FFFFH , 368000H-36FFFFH 360000H-367FFFH 360000H-367FFFH 358000H-35FFFFH 358000H-35FFFFH 350000H-357FFFH 350000H-357FFFH 348000H-34FFFFH 348000H-34FFFFH 340000H-347FFFH 340000H-347FFFH ... Original
datasheet

73 pages,
689.62 Kb

wes 237 flash 8m*16bit CEF 83 A 3 MX69LW12832T/B/U/D 128M-BIT 32M-BIT MX69LW12832T/B/U/D abstract
datasheet frame
Abstract: 388000H-38FFFFH 388000H-38FFFFH 380000H-387FFFH 380000H-387FFFH 378000H-37FFFFH 378000H-37FFFFH 370000H-377FFFH 370000H-377FFFH 368000H-36FFFFH 360000H-367FFFH 360000H-367FFFH ... Original
datasheet

74 pages,
1180.29 Kb

FF4000h-FF5FFFh FB0000h-FBFFFFh C10000h-C1FFFFh 9F0000h-9FFFFFh C000H-DFFFH MX29LW128T/B/U/D 128M-BIT MX29LW128T/B/U/D abstract
datasheet frame
Abstract: 368000h-36FFFFh BA108 BA108 32 Kwords 360000h-367FFFh BA107 BA107 32 Kwords 358000h-35FFFFh BA106 BA106 32 , Kwords 368000h-36FFFFh BA115 BA115 32 Kwords 360000h-367FFFh BA114 BA114 32 Kwords ... Original
datasheet

41 pages,
606.28 Kb

samsung nor BA134 BA127 Diode BA102 samsung nor flash K8A6415ET K8A6415ET abstract
datasheet frame
Abstract: BA110 BA110 32 Kwords 370000H-377FFFH 370000H-377FFFH BA109 BA109 32 Kwords 368000H-36FFFFH BA108 BA108 32 Kwords , Kwords 370000H-377FFFH 370000H-377FFFH BA116 BA116 32 Kwords 368000H-36FFFFH BA115 BA115 32 Kwords ... Original
datasheet

48 pages,
1025.31 Kb

samsung NAND memory UtRAM Density MITSUBISHI SR-40 BA127 Diode BA102 transistor sr61 SAMSUNG MCP samsung date code decorder KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M KBA0101A0M abstract
datasheet frame
Abstract: 388000h-38FFFFh 380000h-387FFFh 378000h-37FFFFh 370000h-377FFFh 368000h-36FFFFh 360000h-367FFFh 358000h-35FFFFh , 370000h-377FFFh 368000h-36FFFFh 360000h-367FFFh 358000h-35FFFFh 350000h-357FFFh 348000h-34FFFFh 340000h-347FFFh ... Original
datasheet

41 pages,
587.62 Kb

K8A6415ET K8A6415ET abstract
datasheet frame
Abstract: M29W640GH M29W640GH, M29W640GL M29W640GL M29W640GT M29W640GT, M29W640GB M29W640GB 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory Feature summary Supply Voltage ­ VCC = 2.7V to 3.6V for Program, Erase, Read ­ VPP =12V for Fast Program (optional) Asynchronous Random/Page Read ­ Page Width: 4 Words ­ Page Access: 25ns ­ Random Access: 60ns, 70ns Fast Program commands ­ 2 Words/4 Bytes Program (without VPP=12V) ­ 4 Words/8 Bytes Program (with VPP=12V) ­ 16 Word/32 Byte Write Buffer Programming time ­ 10 µs per Byte/Word t ... Original
datasheet

90 pages,
580.2 Kb

M29W640GH 2298H M29W640 M29W640GL M29W640GT M29W640GB M29W640GH/L M29W640GT/B M29W640GH abstract
datasheet frame
Abstract: M29W640GH M29W640GH M29W640GL M29W640GL M29W640GT M29W640GT M29W640GB M29W640GB 64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block) 3 V supply flash memory Feature Supply voltage ­ VCC = 2.7 to 3.6 V for program/erase/read ­ VPP =12 V for fast program (optional) TSOP48 TSOP48 (NA) 12 x 20 mm Asynchronous random/page read ­ Page width: 4 words ­ Page access: 25 ns ­ Random access: 60 ns, 70 ns, 90 ns TFBGA48 TFBGA48 (ZA) 6 x 8 mm FBGA64 FBGA64 (ZS) 11 x 13 mm TBGA64 TBGA64 (ZF) 10 x 13 mm(1) 1. Packages only available upo ... Original
datasheet

90 pages,
1690.33 Kb

220ch TFBGA48 numonyx m29 M29W640GH M29W640GB M29W640 M29W640GL TSOP56 M29W640GT M29W640GH/L M29W640GT/B M29W640GH abstract
datasheet frame
Abstract: SA276 S29PL-J S29PL-J 128 / 128 / 64 / 32M 8 / 8 / 4 / 2M - 16 - CMOS 3.0 V / Enhanced VersatileIO TM S29PL-J S29PL-J Cover Sheet (Advance Information) : Spansion ADVANCE INFORMATION PRELIMINARY FULL PRODUCTION S29PL-J S29PL-J_00_J 10 2007 11 2 D a ta S h e e t ( A d va n c e I n fo r m a t i o n ) ADVANCE INFORMATION PRELIMINARY Spansion Advance Information ADVANCE INFORMATION Spansion Inc. ADVANCE INFORMATION Spansion Inc ... Original
datasheet

97 pages,
2868.61 Kb

Sapnsion AM29PDL S29PL-J 10100101XX SA216 sa1, NXB Pl064j SA178 PL032J SA-194 SA182 S29PL-J abstract
datasheet frame
Abstract: MBM29LV650UE90/MBM29LV651UE90 MBM29LV650UE90/MBM29LV651UE90 ( ) MBM29LV650UE90/MBM29LV651UE90 MBM29LV650UE90/MBM29LV651UE90 Cover Sheet Spansion Spansion Publication Number MBM29LV650UE90/MBM29LV651UE90 MBM29LV650UE90/MBM29LV651UE90 Revision DS05-20882-6 DS05-20882-6 Amendment none Issue Date March 9, 2009 D a ta S h e e t ( R e t i r e d P r o d u c t ) 2 MBM29LV650UE90/MBM29LV651UE90 MBM29LV650UE90/MBM29LV651UE90_DS05-20882-6none March 9, 2009 2003 9 , , , AMD "Am" "MBM" , , AMD DS05�882� DAT ... Original
datasheet

51 pages,
525.15 Kb

TN48 Marking code M19 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90 SGA29 sga31 DS05 SA124 MBM29LV650UE-90 MBM29LV650UE90/MBM29LV651UE90 MBM29LV650UE90/MBM29LV651UE90 abstract
datasheet frame
Abstract: SA540 SA1-141 2003 9 , , , AMD "Am" "MBM" , , AMD DS05�882� DATA SHEET CMOS 64M (4M � 16) MBM29LV650UE90 MBM29LV650UE90 MBM29LV651UE90 MBM29LV651UE90 s MBM29LV650UE/651UE MBM29LV650UE/651UE 67,108,864 bit 3V + EPROM CMOS MBM29LV650UE/651UE MBM29LV650UE/651UE (32K � 128 16bit 4M � 32K 128 TSOP 1 48 ) 1 0.5 1.0 1 MBM29LV650UE/651UE MBM29LV650UE/651UE s MBM29LV650UE90/651UE90 MBM29LV650UE90/651UE90 -40 85 90 ns 3.3 V � 0.3 V 5 MHz 5 ... Original
datasheet

49 pages,
256.03 Kb

sa76 307F DS05 FPT-48P-M19 FPT-48P-M20 MBM29LV650UE MBM29LV650UE-90 MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90 SA127 22D7H marking code M19 datasheet abstract
datasheet frame
Abstract: TH50VSF4682/4683AASB TH50VSF4682/4683AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF4682/4683AASB TH50VSF4682/4683AASB is a mixed multi-chip package containing a 16,777,216-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. The TH50VSF4682/468 TH50VSF4682/468 ... Original
datasheet

55 pages,
571.3 Kb

TH50VSF4683AASB BA110 BA134 BK11 A12F diode ba102 diode ba127 TH50VSF4682AASB BA102 BA111 BK16 BA127 ba112 BA118 TH50VSF4682/4683AASB TH50VSF4682/4683AASB TH50VSF4682/4683AASB TH50VSF4682/4683AASB abstract
datasheet frame