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First line: 3655 Buffered Linear-Ramp Generator Operates Rail-to-Rail from Single Supply SIGNAL GENERATION CIRCUITS 2005 APPLICATION NOTE 3655 Abstract: .. APPLICATION NOTE 3655. Buffered Linear-Ramp Generator Operates Rail-to-Rail from a Single Supply. A precision ramp generator produces a 0 to 5V ramp while operating from a single 5V supply. Using .. Tags: transistor 3655 mosfet amp ic MAX4490 3655 datasheet abstract.. |
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First line: MAX4490 Maxim Notes SIGNAL GENERATION CIRCUITS Keywords: Linear ramp generator, single supply, amp, voltage follower, voltage reference, MOSFET 2005 APPLICATION NOTE 3655 Buffered Linear-Ramp Generator Operates Rail-to-Rail from Single Supply Abstract: .. APPLICATION NOTE 3655. Buffered Linear-Ramp Generator Operates Rail-to-Rail from a Single Supply. Abstract: A precision ramp generator produces a 0 to 5V ramp while operating from a single 5V .. Tags: voltage follower transistor 3655 mosfet amp ic MAX4490 datasheet abstract.. |
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First line: 4e24 LC6554H* ic 3842 datasheet Ordering number Announcement Regarding Discontinuation Products Thank using SANYO semiconductor products. following SANYO semiconductor products, DIP64S (750mil), have been discontinued. Please check this list carefully contact your SANYO sales representative have que Abstract: .. LC6554H-3655. LC6554H-3863 LC6554H-3863 . LC6554H-4302 LC6554H-4302 . LC6554H-4122 LC6554H-4122 . LC6554H-3983 LC6554H-3983 . LC6554H-4301 LC6554H-4301 . Affected .. Tags: 4e24 4557 ic lc6554h-4958 LC6554H* LC6554D ic 4440 ic 3842 datasheet 4330 3842 DIP64S |
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First line: Abstract: .. . <3 ""3 3655. = "$6 36FF 36FF "53 3%"" " 5"% 3"$6 6%% 3"JC. $ %3% 3"CF JA% 353" !! !! 3C3 335% = <3 F% 3556 CJ .. Tags: diode A5F datasheet abstract.. |
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First line: Abstract: .. . <3 ""3 3655. = "$6 36FF 36FF "53 3%"" " 5"% 3"$6 6%% 3"JC. $ %3% 3"CF JA% 353" !! !! 3C3 335% = <3 F% 3556 CJ .. Tags: diode A5F 3655 datasheet abstract.. |
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First line: 3669 2sc3438 2SC3536 Type Manuf. SANYO TOSHIBA HITACHI FUJITSU MATSUSHITA MITSUBISHI ROHM 3640 2SC3643 2SC3536 251)1732 3641 2SC3644 2SC3536 3642 2SC3535 2SC3737 3643 2SC3536 2SC3738 3644 2SC3536 2SC3738 3645 2SC2880 2SD968A 3646 2SC2881 2i>Di4i9 2SC3438 ocniooo Abstract: .. 3652 Â S : 2SC4271 2SC4271 2SC3613 2SC3613 2SC 3653 -E DTC144BS DTC144BS 2SC 3654 z ft DTC124ES DTC124ES 2SC 3655 E. n DTC144WS DTC144WS 2SC 3656 H DTC114ES DTC114ES 2SC 3657 y 2SC3153 2SC3153 2SC3535 2SC3535 2SC3322 2SC3322 2SD1391 2SD1391 2SC 3658 S il 2SD870 2SD870 2SD1175 2SD1175 2SC 3659 a ii 2SD870 2SD870 .. Tags: 2SC3536 2sc3438 3669 2sc3153 2SC4464 datasheet abstract.. |
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First line: CRO3628A-LF Applications Satellite Communications Fixed Wireless Application Notes Abstract: .. 3588 3596 3604 3611 3619 3628 3637 3646 3655 3663. FREQUENCY MHz Physical Dimensions SOLDER MASK. GOLD PLATED PADS. NOTE: ALL DIMENSIONS ARE IN INCHES TOL: XXX: +/- 0.010. Z-COMM. XXXXXXXX-LF W/O .. Tags: 3655* 3637 015 CRO3628A-LF |
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First line: CRO3662A-LF Applications Point point radio Fixed Wireless Application Notes Abstract: .. 3655. 3660. 3665. 3670. 3675. 3680. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5. C. C. C. TUNING VOLTAGE Vdc FREQUENCY .. Tags: CRO3662A-LF |
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First line: 3655 Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEL: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. RDIMM Case 8 Rank = 8 Loading LRDIMM Case 8 Rank = 2 Loading MB. Rank 4 Rank 3 Rank 2 .. Tags: 3655 samsung ddr3 datasheet abstract.. |
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First line: 3655 CRO3662A-LF Abstract: .. 3655. 3660. 3665. 3670. 3675. 3680. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5. -15 -14. -13 -12. -11 -10. -9 -8. -7 -6. -5 -4. -3 -2. -1 .. Tags: 3655 CRO3662A-LF |
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First line: s3c2410 datasheet S3C2410A* RISC-Processor s3c2410 s3c2410 Samsung S3C2410 World's First ARM-Based Processor with NAND Flash Support Design Innovation Mobile Computing Samsung's S3C2410 16/32-bit RISC microprocessor designed provide cost effective, power, small size high performance microcontroller Abstract: .. Samsung Semiconductor, Inc. 3655 North First Street, San Jose, CA 95134-1713 Tel: 408-544-4000 Fax: 408-544-4950 www.usa.samsungsemi.com. DS-S3C2410AP-01 DS-S3C2410AP-01 PRINTED 2/03. The S3C2410 S3C2410 is developed .. Tags: S3C2410A*Â USB samsung touch screen controller samsung samsung* processors SAMSUNG nand S3C2410A* s3c2410* RISC-Processor s3c2410 interfacing mobile to a USB host microcontroller ICs for TFT LCD samsung Data sheet 1713 ARM920t datasheet S3C2410 |
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First line: 512Mx4 samsung ddr DIMMs Samsung registered DIMMs available speeds Mbps. Memory Solution Optimized Server Performance Today's servers require extensive memory fast data access overall performance. world's memory leader, Samsung offers broadest selection highest-density memory modules available serve Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEL: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. Components. DDR SDRAM Components. Density Org Speed Mbps Part Number Package. 1Gb .. Tags: samsung ddr 512Mx4 TSOP 66 Package tsop 66 1Gb tsop 66 SAMSUNG TSOP samsung ram circuit memory samsung Data sheet 1713 datasheet abstract.. |
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First line: rdram Samsung RDRAM PC1066 Samsung's RDRAM world's fastest, most efficient memory interface available today, providing controller pins single channel. Samsung's RDRAM designed computing, consumer communication applications that require highly reliable performance memory capabilities. RDRAM 1066 enab Abstract: .. US Samsung Semiconductor, Inc. Tel: 408-544-4000 3655 North First Street Fax: 408-544-4950. San Jose, CA 95134. http://www.usa.samsungsemi.com. Copyright 2002, by Samsung Semiconductor .. Tags: rdram PC1066 |
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First line: SI4435DY* Si4435DY_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic c Abstract: .. CT3 2.3655 N/A N/A. CT4 9.5591 N/A N/A. Vishay Siliconix Si4435DY Si4435DY _RC. www.vishay.com 2. Document Number: 74098 Revision 31-Aug-05 31-Aug-05 . R-C THERMAL MODEL FOR FILTER CONFIGURATION. Note: NA indicates .. Tags: SI4435DY* 8069 7446 Si4435DY RC |
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First line: FPD750 FPD7612 TOM3 TOM2 Models 27/01/2005 Modelling Report FPD7612 TOM3 TOM2 Models Abstract: .. IND ID=Is L =0.0 3655 nH. IND ID= Ig L=0.155 n H. CAP ID=CdsExt C= 0.0001 56 pF. IND ID= IsExt L=0.0072 nH. IND ID=Idext L=0.2414 n H. IND ID= Igext L=0.1607 nH. CAP ID=CgG round1 C= 0.051 24 pF. CAP ID= CgGround2 .. Tags: FPD7612 FPD750 FILTRONIC modeling report FPD7612 |
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First line: FPD3000 FPD3000 TOM3 TOM2 Models 27/01/2005 Modelling Report FPD3000 TOM3 TOM2 Models Abstract: .. IND ID=Is L =0.0 3655 nH. IND ID= Ig L=0.155 n H. CAP ID=CdsExt C= 0.0001 56 pF. IND ID= IsExt L=0.0072 nH. IND ID=Idext L=0.2414 n H. IND ID= Igext L=0.1607 nH. CAP ID=CgG round1 C= 0.051 24 pF. CAP ID= CgGround2 .. Tags: FPD3000 FILTRONIC modeling report FPD3000 |
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First line: FPD750 FPD750 TOM3 TOM2 Models 24/01/2005 Modelling Report FPD750 TOM3 TOM2 Models Abstract: .. IND ID=Is L =0.0 3655 nH. IND ID= Ig L=0.155 n H. CAP ID=CdsExt C= 0.0001 56 pF. IND ID= IsExt L=0.0072 nH. IND ID=Idext L=0.2414 n H. IND ID= Igext L=0.1607 nH. CAP ID=CgG round1 C= 0.051 24 pF. CAP ID= CgGround2 .. Tags: FPD750 FPD750 |
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First line: Modelling Report FPD6836 FPD6836 TOM3 TOM2 Models 24/01/2005 Modelling Report FPD6836 TOM3 TOM2 Models Abstract: .. IND ID=Is L =0.0 3655 nH. IND ID= Ig L=0.155 n H. CAP ID=CdsExt C= 0.0001 56 pF. IND ID= IsExt L=0.0072 nH. IND ID=I dext L=0.2414 n H. IND ID= Igext L=0.1607 nH. CAP ID=CgG round1 C= 0.051 24 pF. CAP ID= CgGround2 .. Tags: Modelling Report FPD6836 Modeling Report FPD6836 FPD6836 FILTRONIC modeling report Filtronic FPD6836 |
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First line: FPD200 TOM3 TOM2 Models 24/01/2005 Modelling Report FPD200 TOM3 TOM2 Models Abstract: .. IND ID=Is L =0.0 3655 nH. IND ID= Ig L=0.155 n H. CAP ID=CdsExt C= 0.0001 56 pF. IND ID= IsExt L=0.0072 nH. IND ID=Idext L=0.2414 n H. IND ID= Igext L=0.1607 nH. CAP ID=CgG round1 C= 0.051 24 pF. CAP ID= CgGround2 .. Tags: FPD200 Filtronic FPD200 |
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First line: FPD1500 FPD1500 TOM3 TOM2 Models 27/01/2005 Modelling Report FPD1500 TOM3 TOM2 Models Abstract: .. IND ID=Is L =0.0 3655 nH. IND ID= Ig L=0.155 n H. CAP ID=CdsExt C= 0.0001 56 pF. IND ID= IsExt L=0.0072 nH. IND ID=Idext L=0.2414 n H. IND ID= Igext L=0.1607 nH. CAP ID=CgG round1 C= 0.051 24 pF. CAP ID= CgGround2 .. Tags: FPD1500 modeling report FPD1500 FPD1500 |
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First line: 22129 c 64016 ams 3654 DTT500 DAFLON Thin Wall Teflon® Tubing 4/3/03 6:21 DAFLON Thin Wall Teflon® Tubing MIL-I-22129 3655 Description: Daflon tubing extruded from Dupont Tetrafluoroethylene resin unmatched other tubing applications hi-frequencies hi-temperatures. Rated continuous operation Abstract: .. DAFLON Thin Wall Teflon Tubing. MIL-I-22129 MIL-I-22129 AMS 3655. Daflon 500 tubing is extruded from Dupont Tetrafluoroethylene resin and is unmatched by any. other tubing for use in applications for hi-frequencies .. Tags: ams 3654 c 64016 22129 DTT500 |
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First line: thomson tgf THOMSON-CSF fast switching thyristors Arms thyristors rapides Aeff Tamb Type VRRM VDRM VTM/ 'TM (mA) di/dt (A/^s) dv/,|t# VDRM VRRM VDRM (mA) Case Arms Tease 3654 3655 3656 3657 3658 22,5 2,05 Arms Tease 3649 3650 3651 3652 3653 22,5 2,05 Abstract: .. "T VDRM max mA V max M Case 35 Arms / Tease = 40 C Tj = 120 C I2t = 200 A2 s lT = 10 A 2N 3654 2N 3655 2N 3656 2N 3657 2N 3658 22,5 50 100 200 300 400 200 2,05 25 3 180 400 200 6 - 10 35 Arms / Tease = 40 C Tj = 120 .. Tags: thomson tgf datasheet abstract.. |
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First line: omponents 20736 Marilla Street Chatsworth Abstract: .. 3655. <//&;31; M C C MMBTA14 MMBTA14 MMBTA13 MMBTA13 . Revision: 4 2008/01/01. TM. Micro Commercial Components. www .. Tags: datasheet abstract.. |
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First line: S3C2412 samsung lcd controller circuit diagram data sheet for samsung lcd USB Flash Memory SAMSUNG Samsung s3c2412 Samsung S3C2412 Mobile Processor High-performance, Low-power, Cost-effective Solution Handhelds Samsung S3C2412 mobile processor gives designers products such portable devices, PDAs, po Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEL: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. .. Tags: Samsung s3c2412 USB Flash Memory SAMSUNG circuit diagram data sheet for samsung lcd samsung lcd controller samsung* processors samsung nand samsung mobile Samsung MLC Samsung S3C2412 MLC nand flashes LCD for mobile lcd circuit diagram for samsung ICs for TFT LCD samsung ICs controller TFT LCD samsung S3C2412 |
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First line: ddr2 datasheet DDR2 Datasheet 256MB DDR2 Samsung DDR2: When Performance Matters Highest-Bandwidth Memory Desktops Samsung offers industry's broadest selection DDR2 DIMMs, available densities from 256MB 4GB. Today's Fastest DRAM Delivers Greater Speed, Uses Less Power Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEl: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. With Samsung. DDR2 memory, next-generation. desktops can support. better media playback .. Tags: DDR2 Datasheet 256MB SEMI GRAPHICS m378T6453FZ3 - ccc ddr2 32MX64 128*64 datasheet abstract.. |
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First line: DTR1000 hd receiver RCA catalog excellent quality eSTB line set-top-boxes fully guaranteed Samsung Digital Terrestrial Receiver DTR1000 Fully Compliant with ATSC Digital Television Standard Receives 8VSB Terrestrial Broadcasting signal 5.1-channel Dolby AC-3 Audio Decoding Supports Dolby Video Outpu Abstract: .. Samsung Electro-Mechanics America, Inc. 3655 North First Street, San Jose, CA. 95134 U.S.A. TEL : +1-408-544-5200~9, 5211~5, 5217~8 FAX : +1-408-544-4967~8 E-mail : ycha@usa.samsung.com .. Tags: RCA catalog hd receiver DTR1000 samsung rca Remote Digital Display DSUB-15 Dolby S DTR1000 |
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First line: Samsung Electro-Mechanics 11Mbps High Rate 802.11b Wireless WirelessLAN Card SAMSUNG MagicLan keeps free from wire Save time money spent installing network adding users onto existing network taking advantage Samsung's Wireless solution. Enjoy world convenience with Samsung MagicLAN. Abstract: .. Samsung Electro-Mechanics America Inc. 3655 North First Street, San Jose, CA. 95134 U,S.A. TEL:+1-408-544-5274 FAX:+1-408-544-4967. Sao Paulo Office Rua Prof. Manuelito De Ornellas. 303 .. Tags: Samsung Electro-Mechanics Magic* datasheet abstract.. |
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First line: MICRO SWITCH Honeywell Division FED. MFG. CODE 91929 SWITCH ENCLOSED CATALOG LISTING BZE6-2RN1812 Abstract: .. CATALOG LISTING BZE6-2RN1812 BZE6-2RN1812 CN ra z m CN I CO LÜ N CD rr> REVISIONS Ä1 :0-3655 T S M 22 APR 93 R I co~ D I77Î79A K D R 18 FEB 94 Q LU Ll- < CO O \ > < a: Q n U Q V- - 1.00 -ACROSS FLATS 3.0404.030 4X LEAD SEALING .. Tags: datasheet abstract.. |
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First line: SGS-THOMSON 3650 3658 FAST SWITCHING HIGH dl/dt dV/dt RATINGS 10ns 15ns FOLLOWING Vqrm/Vrrm HIGH STABILITY RELIABILITY Abstract: .. for soldering during 10 s at 4.5 mm from case 230 Â C Symbol Parameter 2N Unit 3650 3655 3651 3656 3653 3658 VdRM vrrm Repetitive peak off-state voltage Tj - 125 Â c 100 200 400 v July 1991 7^237 QOSTMflh .. Tags: datasheet abstract.. |
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First line: ZX05-C42LH+ CONVERSION LOSS (dB) (MHz) (MHz) 1000.1 1082.2 1164.2 1246.3 1328.3 1410.4 1492.4 1574.5 1656.5 1738.6 1820.6 1902.7 1984.7 2066.8 2148.8 2230.9 2312.9 2395.0 2477.0 2559.1 2641.1 2723.2 2805.2 2887.3 2969.3 3051.4 3133.4 3215.5 3297.5 3379.6 3461.6 3543.7 3625.7 3707.8 3789.8 3871.9 395 Abstract: .. 3625.7 3655.8 6.33 5.99 5.90 3655.8 32.5 30.4 28.7 24.7 25.5 25.7 3655.8 3625.7 18.7 3707.8 3737.8 6.55 5.97 5.72 3737.8 32.3 30.7 29.4 24.7 26.0 26.2 3737.8 3707.8 18.3 3789.8 3819.9 6.98 6.28 .. Tags: ZX05-C42LH+ |
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First line: hxtr-7011 hxtr-7111 HXTR-3625* HXTR-3625 HXTR-3615 HEWLETT-PACKARD^ CMPNTS T-3I-J? Noise Transistors HXTR-7011 Chip HXTR-7111, HXTR-3615, HXTR-3645, HXTR-3675, HSMX-3635 HSMX-3655 High Noise Abstract: .. , TX and TXV HXTR-3645 HXTR-3645 , TX and TXV HXTR-3675 HXTR-3675 , TX and TXV HSMX-3635 HSMX-3635 HSMX-3655 Features • High fT 6.0 GHz • Low Noise 1.2 dB at 1.0 GHz 2.8 dB at 4.0 GHz • HighGain 18.5 dB at 1.0 GHz 8.7 dB at 4.0 GHz • High PldB .. Tags: HXTR-3615 HXTR-3625 HXTR-3625* hxtr-7111 hxtr-7011 datasheet abstract.. |
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First line: SKY-53LHR Abstract: .. 3625.2 3655.2 6.41 6.14 6.02 3625.2 3655.2 16.85 18.46 17.40 3625.2 3655.2 0.91 0.63 0.58 3785.7 3815.7 6.30 6.17 6.09 3785.7 3815.7 18.83 16.38 15.21 3785.7 3815.7 1.15 0.83 0.83 3946.2 3976 .. Tags: 6995 dbm 5551 datasheet SKY-53LHR |
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First line: SKY-53LHR+ Abstract: .. 3625.2 3655.2 6.41 6.14 6.02 3625.2 3655.2 16.85 18.46 17.40 3625.2 3655.2 0.91 0.63 0.58 3785.7 3815.7 6.30 6.17 6.09 3785.7 3815.7 18.83 16.38 15.21 3785.7 3815.7 1.15 0.83 0.83 3946.2 3976 .. Tags: 6995 dbm 5581 5551 datasheet SKY-53LHR+ |
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First line: MCA-36FMH+ Abstract: .. 4085.0 3655.0 11.24 10.70 10.45 4085.0 3655.0 19.83 23.69 30.57 4085.0 3655.0 0.46 0.39 0.20 4120.0 3690.0 11.47 10.79 10.44 4120.0 3690.0 18.90 22.11 28.17 4120.0 3690.0 0.44 0.42 0.25 RF .. Tags: MCA-36FMH+ |
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First line: 9583 ZMX-7GR Abstract: .. 3625.1 3655.1 4.84 4.66 4.58 3625.1 3655.1 8.04 9.96 11.37 3625.1 3655.1 1.25 0.96 0.80 3837.6 3867.6 5.02 4.85 4.80 3837.6 3867.6 9.01 9.99 11.30 3837.6 3867.6 1.14 0.81 0.71 4050.1 4080.1 .. Tags: 9583 ZMX-7GR |
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First line: MCA-36FMH+ Abstract: .. 4085.0 3655.0 11.24 10.70 10.45 4085.0 3655.0 19.83 23.69 30.57 4085.0 3655.0 0.46 0.39 0.20 4120.0 3690.0 11.47 10.79 10.44 4120.0 3690.0 18.90 22.11 28.17 4120.0 3690.0 0.44 0.42 0.25 RF .. Tags: MCA-36FMH+ |
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First line: SKY-53LHR+ Abstract: .. 3625.2 3655.2 6.41 6.14 6.02 3625.2 3655.2 16.85 18.46 17.40 3625.2 3655.2 0.91 0.63 0.58 3785.7 3815.7 6.30 6.17 6.09 3785.7 3815.7 18.83 16.38 15.21 3785.7 3815.7 1.15 0.83 0.83 3946.2 3976 .. Tags: SKY-53LHR+ |
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First line: SKY-53LHR Abstract: .. 3625.2 3655.2 6.41 6.14 6.02 3625.2 3655.2 16.85 18.46 17.40 3625.2 3655.2 0.91 0.63 0.58 3785.7 3815.7 6.30 6.17 6.09 3785.7 3815.7 18.83 16.38 15.21 3785.7 3815.7 1.15 0.83 0.83 3946.2 3976 .. Tags: SKY-53LHR |
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First line: ZMX-7GR Abstract: .. 3625.1 3655.1 4.84 4.66 4.58 3625.1 3655.1 8.04 9.96 11.37 3625.1 3655.1 1.25 0.96 0.80 3837.6 3867.6 5.02 4.85 4.80 3837.6 3867.6 9.01 9.99 11.30 3837.6 3867.6 1.14 0.81 0.71 4050.1 4080.1 .. Tags: ZMX-7GR |
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First line: hxtr-7111 HXTR-3615 HEWLETT-PACKARD^ CMPNTS T-H-l*? Noise Transistors HXTR-7011 Chip HXTR-7111, HXTR-3615, HXTR-3645, HXTR-3675, HSMX-3635 HSMX-3655 High Noise Abstract: .. , TX and TXV HXTR-3645 HXTR-3645 , TX and TXV HXTR-3675 HXTR-3675 , TX and TXV HSMX-3635 HSMX-3635 HSMX-3655 Features • High fT 6.0 GHz • Low Noise 1.2 dB at 1.0 GHz 2.8 dB at 4.0 GHz • HighGain 18.5 dB at 1.0 GHz 8.7 dB at 4.0 GHz • High PldB .. Tags: HXTR-3615 hxtr-7111 datasheet abstract.. |
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First line: Ultra-fast thyristors Thyristors uita-rapides modified Abstract: .. 65 + 120 180 400 200 15 491 2N 3654 TO 48 50 50 35 40 1802 - 65 + 120 180 400 200 10 499 2N 3655 TO 48 100 100 35 40 1802 -65 + 120 180 400 200 10 499 2N 3656 TO 48 200 200 35 40 1802 -65 + 120 180 400 200 10 499 2N 3657 TO .. Tags: datasheet abstract.. |
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First line: Frequency Synthesizer Typical Performance Data FREQ. (MHz) POWER OUTPUT (dBm) HARMONICS (dBc) CURRENT (mA) SSN-3800A-119+ CURENT (mA) Abstract: .. 3655.00 3.16 2.56 2.12 -27.11 -35.83 -33.05 -44.13 -49.20 -50.13 38.62 40.75 42.36 15.06 16.25 18.57 3677.50 3.31 2.75 2.40 -28.25 -36.71 -33.51 -43.76 -48.61 -56.01 38.65 40.77 42.39 15.11 .. Tags: SSN-3800A-119+ |
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First line: Knob Marking Abstract: .. 1/8” 040-3615 040-3625 040-3635 040-3645 040-3655 040-3665. 2 040-3610 040-3620 040-3630 040-3640 040-3650 040-3660. matt. glossy. matt. glossy. with line. without line. packing unit: 100 pieces .. Tags: a 3115 044-3025 datasheet abstract.. |
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First line: DDR2 LDD5 Samsung DDR2: When Performance Matters Maximum Speed Mobility Notebooks Samsung DDR2 SODIMMs available densities from 256MB feature speeds 667Mb second. Power Fast Speed Notebook Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEl: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. Samsung DDR2. SODIMMs deliver. greater performance. per watt and improved. battery .. Tags: samsung* processors M470T3354CZ3 LDD5 DDR2 128*64 datasheet abstract.. |
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First line: SATA hard disk controller disk drive diagram HD753LJ HD502ij samsung hd501lj Samsung Spinpoint Hard Disk Drive Industry's First Three-disk Solution Terabyte Storage Samsung Spinpoint drive offers superior combination density, recording quality reliability. Better Reliability, Less Energy Consumption Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEL: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. Notes: Design and specifications are subject to change without prior notice. CAPACITy .. Tags: disk drive diagram SATA hard disk controller samsung hd501lj HD753LJ HD502ij hard disk 16MB "Vibration Sensor" datasheet abstract.. |
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First line: oneNand Datalight OneBoot Samsung OneNAND Flash Datalight software provides fast designers take advantage OneNAND Flash, market's highestperformance flash memory. OneNAND offers additional benefits like power requirements significant savings compared flash solution. Flash Software Layer Helps Provid Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEL: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. Datalight OneBoot and OneBoot + File help designers quickly get products to market .. Tags: oneNand flash oneNand datasheet abstract.. |
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First line: SAMSUNG LAPTOP Samsung HighPerformance 512Mb GDDR3 Graphics Memory Samsung's GDDR3 next-generation, JEDEC-standard graphics memory most advanced applications. Faster, Denser Memory Advanced Graphics Requirements Three-dimensional graphics applications require advanced memory with exceptionally high Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEL: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. Since just eight 512Mb 512Mb . Samsung components. are needed to achieve a. density of 512MB 512MB .. Tags: SAMSUNG LAPTOP graphics card graphic card gddr3 datasheet abstract.. |
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First line: samsung hdd samsung hdd motor Samsung Hybrid Hard Drive Reliable Storage Combining Best Flash Magnetic Media offers unique advantages: Boot Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEL: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. Samsung’s HHD gives. Windows Vista portable. PCs new levels of. performance and. reliability .. Tags: samsung hdd motor samsung hdd samsung hard drive oneNand flash oneNand datasheet abstract.. |
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First line: DDR3 socket datasheet ddr2 laptop pin DDR3 jedec samsung ddr3 DDR3 socket datasheet Samsung DDR3 SDRAM Next-Generation Memory Will Reach 1.6Gb/second Samsung DDR3 Unbuffered DIMMs will available densities from 256MB DDR3; component densities 512Mb 1Gb. Massive Bandwidth Power Consumption Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEl: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. Samsung DDR3 is the. optimal memory for. the new generation. of powerful, feature-rich .. Tags: ddr2 laptop pin DDR3 socket datasheet samsung ddr3 DDR3 socket datasheet DDR3 jedec DDR3 DIMM ddr3 datasheet DDR3 2gb ddr3 "DDR3 SDRAM" datasheet abstract.. |
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First line: s3c2443 sd card s3c2443* ARM9 400 mhz samsung ARM920t datasheet s3c2443 datasheet Samsung S3C2443 Mobile Processor Optimized Features High-end Handhelds Portable Navigation Devices Mobile device designs built Samsung S3C2443 have flexibility support multiple storage formats including NAND flash mini Abstract: .. 3655 North First St., San Jose, CA 95134-1713 TEL: 408-544-4000 FAX: 408-544-4950 www.usa.samsungsemi.com. The Samsung S3C2443 S3C2443 . mobile application. processor has the. performance, features .. Tags: ARM920t datasheet ARM9 400 mhz samsung samsung processor connections samsung Pop SAMSUNG osd application note samsung nand ddr Samsung MLC s3c2443 sd card s3c2443 datasheet s3c2443* pc camera controller OneNAND* ICs for TFT LCD samsung S3C2443 |
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