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Abstract: 0.004 2X 0.125 Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ 3600mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ 3600mA Gain Flatness f = 14.40-15.35GHz VDS = 10 V, IDSQ 3600mA Power Added Efficiency at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ 3600mA Drain Current at 1dB Compression 0.120 MIN YYWW SN PARAMETERS/TEST CONDITIONS1 ... Original
datasheet

1 pages,
77.19 Kb

EID1415-15 EID1415-15 abstract
datasheet frame
Abstract: Spec Sheet INDUCTORS SMD Power Inductors (NR series S type) NRS5020T1R0NMGJ NRS5020T1R0NMGJ Features Item Summary 1.0H(�%), 4000mA, 3600mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 800pcs Products characteristics table CaseSize (EIA/JIS) Inductance Inductance Measuring Frequency Rated Current -Saturation Current Rated Current -Temperature Rise Current DC Resistance (max) Avg. , Soldering Method -/5020 1.0H(�%) 100kHz 4000mA 3600mA 0.0252 0.021 -25 to 125 81MHz Yes Yes Reflow ... Original
datasheet

1 pages,
125.29 Kb

NRS5020T1 NRS5020T1R0NMGJ NRS5020T1R0NMGJ abstract
datasheet frame
Abstract: Spec Sheet INDUCTORS SMD Power Inductors (NR series S type) NRS8030T4R7MJGJ NRS8030T4R7MJGJ Features Item Summary 4.7H(�%), 3600mA, 4000mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table CaseSize (EIA/JIS) Inductance Inductance Measuring Frequency Rated Current -Saturation Current Rated Current -Temperature Rise Current DC Resistance (max) Avg. , Soldering Method -/8030 4.7H(�%) 100kHz 3600mA 4000mA 0.0286 0.022 -25 to 125 40MHz Yes Yes Reflow ... Original
datasheet

1 pages,
125.29 Kb

NRS8030T4R7MJGJ NRS8030T4R7MJGJ abstract
datasheet frame
Abstract: Compression f=14.4-15.4GHz, Vds=10V, Idsq=3600mA Gain at 1dB Compression f=14.4-15.4GHz, Vds=10V, Idsq=3600mA Gain Flatness f = 14.4-15.4GHz, Vds = 10 V, Idsq = 3600mA Power Added Efficiency at 1dB compression f=14.4-15.4GHz, Vds=10V, Idsq=3600mA MIN TYP MAX UNIT 41 42 dBm 5 6 ... Original
datasheet

2 pages,
35.49 Kb

EID1415A1-15 EID1415A1-15 abstract
datasheet frame
Abstract: CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ 3600mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ 3600mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ 3600mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 3600mA f = 8.50-9.60GHz Drain , of package) VDS = 10 V, IDSQ 3600mA 0 .4 -0 0. 4 3. 0 10 0 4. 0 -5. ... Original
datasheet

4 pages,
173.22 Kb

pHEMT transistor 60GHz transistor 60Ghz EID8596-12 4600 fet transistor EID8596-12 abstract
datasheet frame
Abstract: Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ 3600mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ 3600mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ 3600mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 3600mA f = 8.50-9.60GHz MIN TYP MAX UNITS , package) VDS = 10 V, IDSQ 3600mA S11 and S22 0 .4 -0 0. 4 3. 0 10 0 4. 0 ... Original
datasheet

4 pages,
164.5 Kb

EID8596-12 60Ghz 4600 fet RF TRANSISTOR 10GHZ 60Ghz transistor 4600 fet transistor amplifier TRANSISTOR 12 GHZ EID8596A1-12 EID8596A1-12 abstract
datasheet frame
Abstract: data sheet system: Lithium-Ion-Battery nominal voltage: 3,7V end charge voltage: 4,2V max. charge current: 1800mA charge conditions standard charge: fast charge: charging method: 900mA for 3,5h min. 1800mA for 2,5h min. CC-CV (constant current and constant voltage) capacity nominal: minimal: after standard charge 1800mAh at 0,2C discharge to 2,75V 1680mAh at 0,2C discharge 1600mAh at 1C discharge max. discharge current: 3600mA life time expectancy: > 300 ... Original
datasheet

1 pages,
93.49 Kb

1800mAh 1800-mAh datasheet abstract
datasheet frame
Abstract: 1800mAh ( % ) 1.1 Low Rate Discharge 1 1.5 0.9 5400mA 3600mA (2C) (3C) 0.8 0.7 0 10 ... Original
datasheet

1 pages,
55.69 Kb

datasheet abstract
datasheet frame
Abstract: ) 0.8 0.7 0 10 3600mA (2C) 1800mA (1C) 20 30 40 50 Discharge Time ( Mins ) 60 ... Original
datasheet

1 pages,
30.17 Kb

180mA GP181AFH GP181AFH abstract
datasheet frame
Abstract: 20 C 1.3 1.2 1.1 1 4.7(REF.) 0.9 0.7 1800mA (1C) 5400mA 3600mA (3C) (2C) 0.8 ... Original
datasheet

1 pages,
35.15 Kb

GP180AAH GP180AAHC GP180AAHC abstract
datasheet frame
Abstract: Charging Discharging Storage Storage (1 week) 3600 mA (1C) 1.5 : 1800mA to 3600mA (0.5C to 1C ... Original
datasheet

1 pages,
112.34 Kb

ZRS5038 3600mAh GP370SCHR GP370SCHR abstract
datasheet frame
Abstract: +105°C High Frequency Low Impedance Radial Lead Aluminum Electrolytic Capacitor Part Number: 687KXM035M 687KXM035M General Specifications (PDF) Special Order Options KXM document (PDF) Electrical Specifications Capacitance: 680.0 uF Tolerance: -20 %, +20 % Dissipation Factor: 0.12 at 120 Hz ESR: 0.293 Ohms at 20° C and 120 Hz Impedance: 0.021 Ohms at 20°C 100 kHz 0.053 Ohms at -10°C 100 kHz Impedance Ratios: 2.0 at -25°C/20°C 3.0 at -40°C/20°C Load Life: 5000 Hours at 105°C with 100% of ... Original
datasheet

1 pages,
134.3 Kb

687KXM035M 687KXM035M abstract
datasheet frame
Abstract: +105°C High Frequency Low Impedance Radial Lead Aluminum Electrolytic Capacitor Part Number: 158KXM016M 158KXM016M General Specifications (PDF) Special Order Options KXM document (PDF) Electrical Specifications Capacitance: 1,500.0 uF Tolerance: -20 %, +20 % Dissipation Factor: 0.18 at 120 Hz ESR: 0.199 Ohms at 20° C and 120 Hz Impedance: 0.021 Ohms at 20°C 100 kHz 0.053 Ohms at -10°C 100 kHz Impedance Ratios: 2.0 at -25°C/20°C 3.0 at -40°C/20°C Load Life: 5000 Hours at 105°C with 100% ... Original
datasheet

1 pages,
133.88 Kb

158KXM016M 158KXM016M abstract
datasheet frame
Abstract: +105°C High Frequency Low Impedance Radial Lead Aluminum Electrolytic Capacitor Part Number: 108KXM025M 108KXM025M General Specifications (PDF) Special Order Options KXM document (PDF) Electrical Specifications Capacitance: 1,000.0 uF Tolerance: -20 %, +20 % Dissipation Factor: 0.12 at 120 Hz ESR: 0.199 Ohms at 20° C and 120 Hz Impedance: 0.021 Ohms at 20°C 100 kHz 0.053 Ohms at -10°C 100 kHz Impedance Ratios: 2.0 at -25°C/20°C 3.0 at -40°C/20°C Load Life: 5000 Hours at 105°C with 100% ... Original
datasheet

1 pages,
134.01 Kb

108KXM025M 108KXM025M abstract
datasheet frame

Extended Electronics Archive (Experimental)

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Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
| * | Philips Semiconductors Inc. | Logic Products Group | | IBIS model of PCA9556 PCA9556 PCA9556 PCA9556 | Octal SMBus Registered Interface | TSSOP 16-pin Package | * | [IBIS ver] 2.1 [File name] pca9556.ibs [File Rev] 1.0 [Date] Aug. 25, 1999 [Source] File created from simulations by TA Philips Semiconductors Alb
www.datasheetarchive.com/files/philips/files/products/standard/logic/ibis/pca9556.ibs
Philips 11/06/2002 66.89 Kb IBS pca9556.ibs
| * | Philips Semiconductors Inc. | Logic Products Group | | IBIS model of PCA9559 PCA9559 PCA9559 PCA9559 | 5-bit multiplexed/1-bit latched 6-bit I2C | TSSOP 20-pin Package | * | [IBIS ver] 2.1 [File name] pca9559.ibs [File Rev] 0 [Date] Sep. 15, 1999 [Notes] 1.5K pullup to Vdd added to SDA & 5K pullups to NMXOUT & |
www.datasheetarchive.com/files/philips/files/products/standard/logic/ibis/pca9559.ibs
Philips 11/06/2002 81.39 Kb IBS pca9559.ibs
|* | [IBIS Ver] 2.1 [File name] i960rm.ibs [File Rev] 1.1 [Date] 10/15/98 [Source] File originated at Intel Corporation. [Notes] The following information corresponds to the 3.3 volt 80960RN 80960RN 80960RN 80960RN processor in the 540 Lead PLGA package. This file has programmable buffers for: SA[11:0], SBA[1:0], SRAS#,SCAS#,SWE#,SDQM[7:0]
www.datasheetarchive.com/download/951481-279824ZC/80960r~1.rtf
Intel 25/02/1999 193.67 Kb RTF 80960r~1.rtf
|* | [IBIS Ver] 2.1 [File name] i960rn.ibs [File Rev] 1.1 [Date] 10/15/98 [Source] File originated at Intel Corporation. [Notes] The following information corresponds to the 3.3 volt 80960RN 80960RN 80960RN 80960RN processor in the 540 Lead PLGA package. This file has programmable buffers for: SA[11:0], SBA[1:0], SRAS#,SCAS#,SWE#,SDQM[7:0]
www.datasheetarchive.com/download/68188590-279825ZC/80960r~2.rtf
Intel 25/02/1999 194.35 Kb RTF 80960r~2.rtf
|* ||* | [IBIS Ver] 3.2 [File Name] ad9516.ibs [File Rev] 1.0 [Source] This file originated at analog devices. The original version of this file was automatically generated by the Easy IBIS Wizard v.3.0 (build 120) I/V curves Based on sims , package RLC from vendor. CREATED BY VPN
www.datasheetarchive.com/files/analog-devices/ibismodels/ad9516.ibs
Analog Devices 11/04/2007 43.42 Kb IBS ad9516.ibs
|* ||* | [IBIS Ver] 3.2 [File Name] ad9517.ibs [File Rev] 1.0 [Source] This file originated at analog devices. The original version of this file was automatically generated by the Easy IBIS Wizard v.3.0 (build 120) I/V curves Based on sims , package RLC from vendor. CREATED BY VPN
www.datasheetarchive.com/files/analog-devices/ibismodels/ad9517.ibs
Analog Devices 02/10/2009 43.28 Kb IBS ad9517.ibs
|* | National Semiconductor Corporation | PC Systems Division | IBIS Model of PC87309VLJ PC87309VLJ PC87309VLJ PC87309VLJ | SuperI/O | |* | IBIS file PC87309 PC87309 PC87309 PC87309.ibs created by s2ibis2 version 0.91BETA 91BETA 91BETA 91BETA | North Carolina State University Electronics Research Laboratory 1995 |*
www.datasheetarchive.com/files/national/other/nsc03272.ibs
National 13/08/1999 163.24 Kb IBS nsc03272.ibs
|* | National Semiconductor Corporation | PC System Division | IBIS Model of PC87307VUL PC87307VUL PC87307VUL PC87307VUL | Super I/O |* [IBIS ver] 2.1 [File name] pc87307.ibs [File Rev] 1.0 [Date] Tuesday, August 13, 1996 [Source] ns2ibis Version 1.0 SPICE to IBIS con
www.datasheetarchive.com/files/national/other/nsc03271.ibs
National 13/08/1999 218.54 Kb IBS nsc03271.ibs
|* | National Semiconductor Corporation | PC System Division | IBIS Model of PC87307VUL PC87307VUL PC87307VUL PC87307VUL | Super I/O |* [IBIS ver] 2.1 [File name] pc87307.ibs [File Rev] 1.0 [Date] Tuesday, August 13, 1996 [Source] ns2ibis Version 1.0 SPICE to IBIS con
www.datasheetarchive.com/files/national/docs/wcd0000c/wcd00cfa.txt
National 02/04/1998 218.54 Kb TXT wcd00cfa.txt
|* | IBIS file cir317.ibs created by s2ibis2 version 0.91BETA 91BETA 91BETA 91BETA | North Carolina State University Electronics Research Laboratory 1995 |* | [IBIS ver] 2.1 [File name] pc317.ibs [File Rev] 1.0 [Date] Sunday, November 03, 1996 [Source] [Notes] National Semiconductor Corporation hereby grants the user of
www.datasheetarchive.com/files/national/other/nsc04051.ibs
National 16/08/2002 222.03 Kb IBS nsc04051.ibs