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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: select Word mode (16 bits) or Byte mode (8 bits) for the TH50VSF3580/3581AASB. When VIH is input to CIOF , TH50VSF3580/3581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3580/3581AASB is a mixed multi-chip , /3581AASB can range from 2.67 V to 3.3 V. The TH50VSF3580/3581AASB is available in a 69-pin BGA package , 2001-10-24 1/50 TH50VSF3580/3581AASB PIN ASSIGNMENT (TOP VIEW) · Case: CIOF = VCC, CIOS = VSS (Ã-16 ... | Original |
50 pages, |
TH50VSF3581AASB TH50VSF3580AASB A12F TH50VSF3580/3581AASB TH50VSF3580/3581AASB abstract |
| Abstract: select Word mode (16 bits) or Byte mode (8 bits) for the TH50VSF3580/3581AASB. When VIH is input to CIOF , TH50VSF3580/3581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3580/3581AASB is a mixed multi-chip , /3581AASB can range from 2.7 V to 3.3 V. The TH50VSF3580/3581AASB is available in a 69-pin BGA package , made at the customer's own risk. 2001-03-06 1/50 TH50VSF3580/3581AASB PIN ASSIGNMENT (TOP VIEW ... | Original |
50 pages, |
TH50VSF3581AASB TH50VSF3580AASB A12F TH50VSF3580/3581AASB TH50VSF3580/3581AASB abstract |
| Abstract: TH50VSF3582/3583AASB TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3582/3583AASB TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. Th ... | Original |
50 pages, |
TH50VSF3583AASB TH50VSF3582AASB A12F TH50VSF3582/3583AASB TH50VSF3582/3583AASB abstract |