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2N3810L Microsemi Corporation Transistor visit Digikey
2N2904AL Microsemi Corporation Transistor visit Digikey
2N3499L Microsemi Corporation Transistor visit Digikey
2N2222AUA Microsemi Corporation Transistor visit Digikey
SRF4427G Microsemi Corporation Transistor visit Digikey
2N2907AUA Microsemi Corporation Transistor visit Digikey

358 SMD transistor

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Abstract: transistor TO-92 Q3 2N3905 PNP transistor TO-92 BUTTON - Push button SMD, top side , MATERIALS Ref Value Type Package Description D1 - LED SMD AVAGO TECHNOLOGIES - HSMW-A100-U40J1 LED, SMD, PLCC2, WHITE C1 100n Capacitor SMD 0805 C2 100n Capacitor SMD 0805 C3 100n Capacitor SMD 0805 C4 100n Capacitor SMD 0805 C5 100n Capacitor SMD 0603 C6 10u Capacitor SMD 0805 R1 2.2k Resistor SMD 0603 R2 Micro Analog Systems
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2N3904 smd MARKING SMD transistor R11 transistor smd marking code c3 2N3904 TRANSISTOR SMD TRANSISTOR SMD MARKING CODE R8 TRANSISTOR SMD MARKING CODE 1K DAEV6240 MAS6240 MAS6240C2 MAS6240C1 SMAT-21 M7565-05
Abstract: SMD NPN Transistor T2 BC846C SMC NPN Transistor Table 3 Resistors COMPONENTS VALUES , . The amplifier is equipped with the Philips BLV2045, a NPN silicon planar transistor in a 2-lead SOT390 , profile. When operated from a 26 V supply in class AB mode the transistor has a minimum power gain of 8 , input- and output of the transistor are designed for an optimum gain flatness and efficiency over the , tantal SMD capacitor C3, C4 multilayer ceramic chip capacitor; note 2 20 pF C5 multilayer Philips Semiconductors
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smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 CERAMIC CAPACITOR SMD PHILIPS capacitor SMD PHILIPS transistor SMD DK AN98023 SCA57
Abstract: transistor packages in the world. · Conventional and SMD packages available with maximum power , Resistor-equipped transistors ­ diffused with the transistor in a single die ­ to save board space and handling , solution for digital applications. Integrating up to two biasing resistors on a small-signal transistor , available in conventional and the latest SMD packages, with maximum power dissipation ratings between 150 , transistor packages in the world - SC-89 and SC-75 Ordering To order or receive more information Philips Semiconductors
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MSD230 smd transistor 203 smd transistor 493 MSD231
Abstract: DESCRIPTION Semiconductors D1 BZX84, C6V2 SMD Zener Diode T1 MJD31C SMD NPN Transistor T2 BC846C SMC NPN Transistor R1 1.1 k SMD resistor Philips 1206 R2 4.3 k SMD , . The amplifier is equipped with the Philips BLV2044, a NPN silicon planar transistor in a 2-lead SOT437 , profile. When operated from a 26 V supply in class-AB mode the transistor has a minimum power gain of 8 , of the transistor are designed for an optimum gain flatness and efficiency over the PCS band. Bypass Philips Semiconductors
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AN98022 SMD DIODE gp 817 philips smd 1206 resistor SMD Transistor 6f SMD TRANSISTOR L6 philips smd 1206 philips 1206
Abstract: application note contains information on a 9 W class-AB amplifier based on the SMD transistor BLV909. The , . The next sections contain information on the transistor, the amplifier construction and the typical RF performance obtained. 2 TRANSISTOR BACKGROUND The BLV909 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AIN) substrate , INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE 5 Philips Semiconductors
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AN98020 MGH80 AN98017 AN98026 SMD TRANSISTOR TRANSISTOR SMD catalog
Abstract: application note contains information on a 4 W class-AB amplifier based on the SMD transistor BLV2042. The , 1990 MHz. The next sections contain information on the transistor, the amplifier construction and the typical RF performance obtained. 2 TRANSISTOR BACKGROUND The BLV2042 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AlN) substrate , INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION 4 AMPLIFIER PERFORMANCE 5 Philips Semiconductors
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AN98018 smd-transistor DATA BOOK rt/duroid 6006 Philips 2222-581 smd-transistor -1.am Duroid 6006 Capacitor Tantal SMD 106
Abstract: INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The amplifier described can be used for driver stages in cellular radio base stations in the GSM band 935 - 960 MHz. The next chapters contain information on the transistor, the amplifier construction and the typical RF performance obtained. TRANSISTOR BACKGROUND The BLV904 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AIN Philips Semiconductors
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AN98019 l14 254 AL SMD transistor transistor 935 SMD philips capacitor 470 MGH816 821 ceramic capacitor
Abstract: transistor in a SOT23 plastic package. NPN complements: BC846 and BC847. handbook, halfpage BC856; BC857 , 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 , BC8 Description PNP transistor in a SOT23 plastic package. NPN complements: BC846 and BC847 , device status Standard Marking * Reel Pack, SMD, Low Profile Standard Marking * Reel Pack, SMD, Low Profile Standard Marking * Reel Pack, SMD, Low Profile Standard Marking * Reel Pack, SMD, Low Profile Philips Semiconductors
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SMD MARKING CODE TRANSISTOR 501 TRANSISTOR SMD MARKING CODE 3d TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP MV smd marking code SOT23 M3D088 BC856A BC856B BC857A BC857B BC857C
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product , Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 , planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B , power transistor BLV859 LIMITING VALUES In accordance with the Absolute Maximum Rating System , linear push-pull power transistor BLV859 CHARACTERISTICS Values apply to either transistor section Philips Semiconductors
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DK230 transistor bd139 bvc62 philips 2322 734 smd L17 npn philips power transistor bd139 MAM031 SCA51
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product , UHF linear push-pull power transistor BLV859 PINNING SOT262B FEATURES · Double internal , DESCRIPTION e NPN silicon planar transistor with two sections in push-pull configuration. The device is , specification UHF linear push-pull power transistor BLV859 LIMITING VALUES In accordance with the , Product specification UHF linear push-pull power transistor BLV859 CHARACTERISTICS Values apply Philips Semiconductors
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philips SMD resistor 805 philips resistor 2322-734 chip die npn transistor 2322 722 L3L5 tr2 smd
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT491A NPN BISS transistor , specification NPN BISS transistor FEATURES · High current (max. 1 A) · Low collector-emitter saturation , power consumption are important. DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a , SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit , 1999 Aug 04 2 Philips Semiconductors Product specification NPN BISS transistor THERMAL Philips Semiconductors
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TRANSISTOR SMD MARKING CODE 9A smd 551 code marking sot23 ST 9340 SMD transistor MARKING CODE 43 smd TRANSISTOR code marking pb sot23 SMD TRANSISTOR MARKING 93 PMMT591A MAM255
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT591A PNP BISS transistor , specification PNP BISS transistor FEATURES · High current (max. 1 A) · Low collector-emitter saturation , power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a , VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board , Aug 04 2 Philips Semiconductors Product specification PNP BISS transistor THERMAL Philips Semiconductors
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SMD TRANSISTOR MARKING 9b SMD TRANSISTOR MARKING 9B NPN TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD CODE PACKAGE SOT23 501 301 marking code PNP transistor SMD TRANSISTOR MARKING 76 MAM256
Abstract: transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 13 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES · Low current (max. 100 mA) · High voltage , high-voltage transistor in a SOT23 plastic package. NPN complement: PMBTA42. handbook, halfpage PMBTA92 , System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 , high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 Philips Semiconductors
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2d SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODE 2d SMD TRANSISTOR MARKING 2D TRANSISTOR SMD MARKING CODE 41 2d SMD npn TRANSISTOR transistor SMD MARKING CODE L 33
Abstract: transistor FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. APPLICATIONS · , DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 2 3 e , DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System , soldering point of the collector pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1 Philips Semiconductors
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MAM043 SCDS48 771-BLT80-T/R
Abstract: P1 SMD resistor potentiometer 3.3 2 k 805 2322 734 23308 T1 T2 NPN transistor , DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product , UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B · Internal input , e NPN silicon planar transistor with two sections in push-pull configuration. The device is , Product specification UHF linear push-pull power transistor BLV857 LIMITING VALUES In accordance Philips Semiconductors
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smd transistor 805 239 SMD transistor L17 STR 457 transistor 5- pin smd IC 358 philips resistor 2322 smd transistor t2 MAM217 SCA53
Abstract: transistor BLT80 FEATURES â'¢ SMD encapsulation â'¢ Gold metallization ensures excellent reliability , DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes , band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL , Semiconductors Product specification UHF power transistor BLT80 LIMITING VALUES In accordance with Philips Semiconductors
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Abstract: (PF) SMD/LEADED gmL KBR3.58MSATRPC10 3.58 Leaded 0 gmL PBRC3.58ARPC10 3.58 , 220 OSC2 KBR3.58MSATRPC10 3.58 Leaded 0 OSC2 PBRC3.58ARPC10 3.58 SMD 0 , a PVdd Rbias Xtal2 Xtal1 Figure 1. Vss channel transistor. The main difference with , switched on under certain conditions, e.g. when the oscillator is disabled.These transistor then connect Xtal1 and Xtal2 to the ground. To avoid the flow of (too) much current into the pulldown transistor it Philips Semiconductors
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AN96103 80C51 PCF8583 PDS51 KBR-12 PCF8583 equivalent ic software program pcf8583 KBR-6.0MSA P83CL P83CL434
Abstract: transistor BLT80 FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. 4 , DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 , DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , transistor BLT80 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1 mm, collector pad 35 × 17 Philips Semiconductors
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4894 4312 020 36640 KM10 SMD ic catalogue
Abstract: transistor BLT81 FEATURES â'¢ SMD encapsulation â'¢ Gold metallization ensures excellent reliability , DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes , band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL , . 77 2 Gp (dB) Philips Semiconductors Product specification UHF power transistor Philips Semiconductors
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Abstract: power transistor BLT81 FEATURES · SMD encapsulation · Gold metallization ensures excellent , DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification , communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL , 2 Philips Semiconductors Product specification UHF power transistor BLT81 LIMITING Philips Semiconductors
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2222 730
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