| Contextual Datasheet Results |
1 - 50 of about 108 for 3500A |
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First line: 4cx3500a cpi 4cW50000J 4cx3500a 4CX3500A compact tetrode designed used power amplifier service. features Abstract: .. 4cx 3500a. cpi | 4cW50,000J. For information on this and other CPI products, visit our website at: www.cpii.com , or contact: CPI MPP Division, Eimac Operation, 607 Hansen Way, Palo Alto, CA 94303 .. datasheet abstract.. |
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First line: MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS ELIM ation ecific chan fiits Notice parame Abstract: .. VD = 3600V, IT = 3500A, IGM= 200A, Tj= 25/125°C diG/dt = 100A/μs see Fig. 1, 2 Recommended value 40kN Typical value 21 21 6000 6000 3600 VRRM VRSM VDRM VDSM VLTDS Unit Symbol Parameter .. datasheet abstract.. |
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First line: MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS ELIM ation ecific chan fiits Notice parame Abstract: .. 3500A● IT AV Average on-state current .. 1200A ● VDRM Repetitive peak off-state voltage .. 6000V● Anode short type VDM = 6000V .. datasheet abstract.. |
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First line: KOHSHIN HCL series Medium-sized high-capacity type Bolt type HCL Rated current ..800A~3000A Abstract: .. 0~±3500A. Characteristics chart HC-LE20V4B15 Time base : 5μs/div. Pulse current response characteristic. Noise characteristics Effects of impulse noise Noise characteristics Effects .. datasheet abstract.. |
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First line: KOHSHIN HCB series Large-sized high-capacity type Bolt type HCB High reliability power Abstract: .. ±3500A. 0~±3200A. ±8V±1% RL=10kΩ Within ±30mV. Within ±1% Within 10ms at di/dt=100A/ms .. datasheet abstract.. |
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First line: NTE5580 thru NTE5585 Silicon Controlled Rectifier Phase Control Applications Features Center Fired Abstract: .. 60Hz 3500A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum I2t for Fusing .. datasheet abstract.. |
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First line: MITSUBISHI Gate Commutated Turn-off THYRISTOR UNIT ation nge. pecific final Notice parame Abstract: .. 3500A. IT AV : Average on-state current .. 1200A. VDRM: Repetitive peak off-state voltage .. 6000V VRRM: Repetitive peak reverse .. datasheet abstract.. |
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First line: MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT ation nge. pecific final Notice parame Abstract: .. 3500A. IT AV Average on-state current .. 1200A. VDRM Repetitive peak off-state voltage .. 6000V. VRRM Repetitive .. datasheet abstract.. |
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First line: MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT ation nge. pecific final Notice parame Abstract: .. 3500A IT AV Average on-state current .. 1200A VDRM Repetitive peak off-state voltage .. 6000V VRRM Repetitive .. datasheet abstract.. |
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First line: ARREX TYPICAL APPLICATIONS Three-Wire Sensors transmitter instance Potentiometer / Resistance Temperature LIGHTING ARRESTERS 3-WIRE Abstract: .. 3500A 8x2 0 §Á <0.001nse c. < 1 ¥ì se c. Approx .0. 1 ¥Ø includin greturn 100m A. ¡¤ DI Nrai lo rwal .. datasheet abstract.. |
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First line: SII145S12 IGBT Modules Dimensions 1mm Absolute Maximum Ratings Symbol IGBT VCES ICRM Abstract: .. Qrr di/dt = 3500A/us uC. Err VGE = V mJ. FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25 125 oC 2.1 1.8 2.5 V. V TO Tj = 25 125 oC 1.4 V. rT Tj = 25 125 oC 9 13 m. IRRM IF = 100A; Tj = 25 125 .. datasheet abstract.. |
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First line: SID145S12 IGBT Modules Dimensions 1mm Absolute Maximum Ratings Symbol IGBT VCES ICRM Abstract: .. Qrr di/dt = 3500A/us uC. Err VGE = V mJ. FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25 125 oC 2.1 1.8 2.5 V. V TO Tj = 25 125 oC 1.4 V. rT Tj = 25 125 oC 9 13 m. IRRM IF = 100A; Tj = 25 125 .. datasheet abstract.. |
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First line: SDI145S12 IGBT Modules Dimensions 1mm Absolute Maximum Ratings Symbol IGBT VCES ICRM Abstract: .. Qrr di/dt = 3500A/us uC. Err VGE = V mJ. FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25 125 oC 2.1 1.8 2.5 V. V TO Tj = 25 125 oC 1.4 V. rT Tj = 25 125 oC 9 13 m. IRRM IF = 100A; Tj = 25 125 .. datasheet abstract.. |
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First line: Technische Information Technical Information Netz Thyristor Phase Control Thyristor Features Volle Hohe Abstract: .. tvj = tvj max ITM = 3500A, di/dt = 10A/μs VR = 0,5 VRRM , VRM = 0,8 VRRM Qr 12 mAs Rückstromspitze peak reverse recovery current tvj = tvj max ITM = 3500A, di/dt = 10 A/μs VR = 0,5⋅VRRM , VRM = 0,8⋅VRRM .. datasheet abstract.. |
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First line: Technische Information Technical Information Netz Thyristor Phase Control Thyristor Features Volle Hohe Abstract: .. tvj = tvj max ITM = 3500A, di/dt = 10A/μs VR = 0,5 VRRM , VRM = 0,8 VRRM Qr 12 mAs Rückstromspitze peak reverse recovery current tvj = tvj max ITM = 3500A, di/dt = 10 A/μs VR = 0,5⋅VRRM , VRM = 0,8⋅VRRM .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules KF6C Daten preliminary data Werte Maximum Abstract: .. Rückstromspitze IF = 600A, - diF/dt = 3500A/μsec peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C IRM - 430 - A VR = 900V, VGE = -10V, Tvj = 125°C - 520 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules Daten preliminary data Werte Maximum rated Abstract: .. Rückstromspitze IF = 300A, - diF/dt = 3500A/μs peak reverse recovery current VR = 900V, VGE = -15V, Tvj = 25°C IRM - 330 - A VR = 900V, VGE = -15V, Tvj = 125°C - 350 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules KF6C Werte Maximum rated values Elektrische Abstract: .. Rückstromspitze IF = 600A, - diF/dt = 3500A/μsec peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C IRM - 430 - A VR = 900V, VGE = -10V, Tvj = 125°C - 520 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules Daten preliminary data Werte Maximum rated Abstract: .. Rückstromspitze IF = 300A, - diF/dt = 3500A/μs peak reverse recovery current VR = 900V, VGE = -15V, Tvj = 25°C IRM - 370 - A VR = 900V, VGE = -15V, Tvj = 125°C - 400 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: Technische Information technical information IGBT-Module IGBT-Modules FS300R12KE3 Daten preliminary data Werte maximum Abstract: .. IF= 300A, -diF/dt= 3500A/μs Kurzschlussverhalten tP ≤ 10μs, VGE ≤ 15V, TVj ≤ 125°C ISC - 1200 - A SC data VCC= 900V, VCEmax= VCES - LσCE ·di/dt Einschaltverlustenergie pro Puls turn on energy .. datasheet abstract.. |
320.61 Kb |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules Daten preliminary data Werte Maximum rated Abstract: .. Rückstromspitze IF = 300A, - diF/dt = 3500A/μs peak reverse recovery current VR = 900V, VGE = -15V, Tvj = 25°C IRM - 370 - A VR = 900V, VGE = -15V, Tvj = 125°C - 400 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: European PowerSemiconductor Electronics Company Marketing Information screwing depth max. screwing depth max. Abstract: .. Rückstromspitze peak reverse recovery current IF = 800A, - diF/dt = 3500A/μsec IRM VR = 900V, VGE = -10V, Tvj = 25°C - 450 - A VR = 900V, VGE = -10V, Tvj = 125°C - 650 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules Daten preliminary data Werte Maximum rated Abstract: .. Rückstromspitze IF = 300A, - diF/dt = 3500A/μsec peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C IRM - 370 - A VR = 900V, VGE = -10V, Tvj = 125°C - 400 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: Technische Information technical information IGBT-Module IGBT-Modules FS300R12KE3 Daten preliminary data Werte maximum Abstract: .. IF=IC,nom, -diF/dt= 3500A/μs Durchlassspannung Charakteristische Werte / characteristic values IF= IC, nom, VGE= 0V, Tvj= 25°C IF= IC, nom, VGE= 0V, Tvj= 125°C Einschaltverzögerungszeit .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules KF6C Daten preliminary data Werte Maximum Abstract: .. Rückstromspitze IF = 600A, - diF/dt = 3500A/μsec peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C IRM - 430 - A VR = 900V, VGE = -10V, Tvj = 125°C - 520 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules KF6C Werte Maximum rated values Elektrische Abstract: .. Rückstromspitze IF = 600A, - diF/dt = 3500A/μsec peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C IRM - 430 - A VR = 900V, VGE = -10V, Tvj = 125°C - 520 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: Micro Commercial Corp. MBR50020CT THRU MBR500100CT Abstract: .. Peak Forward Surge Current IFSM 3500A 8.3ms, half sine. Maximum Instantaneous Forward Voltage. VF. IFM = 250 A; TA = 25°C. Maximum DC Reverse Current At Rated DC Blocking Voltage. IR 8 mA. TA = 25°C. Typical .. datasheet abstract.. |
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First line: Transys Electronics MBRF50020 R THRU MBRF50045 R SCHOTTKY DIODES MODULE TYPE 500A Features High Abstract: .. Peak Forward Surge Current IFSM 3500A 8.3ms , half. sine. Maximum Instantaneous Forward Voltage. VF. IR. mA. TJ = 25 TJ = Types Up to 45V VRRM. Maximum Thermal Resistance Junction To Case R j c /W. mA. E G. H. D. A A .. datasheet abstract.. |
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First line: Transys Electronics MBR50020CT R THRU MBR50045CT R SCHOTTKY DIODES MODULE TYPE 500A Features High Abstract: .. Peak Forward Surge Current IFSM 3500A 8.3ms , half. sine. Maximum Instantaneous Forward Voltage. VF. IR. mA. TJ = 25 TJ = Types Up to 45V VRRM. Maximum Thermal Resistance Junction To Case R j c /W. mA. MBR50020CT .. datasheet abstract.. |
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First line: NTE5374 NTE5375 Silicon Controlled Rectifier SCR High Speed Switching Maximum Ratings Electrical Abstract: .. t = 10ms, half sinewave, TJ initial = +125°C, VRM = 0.6VRRMmax 3500A . . . . . . . . . . . . . . . t = 10ms, half sinewave, TJ initial = +125°C, VRM ≤ 10V 3850A . . . . . . . . . . . . . . . . . . . . . . . Maximum Permissible .. datasheet abstract.. |
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First line: Bussmann Limitron Time-Delay Class Fuses Volt Dimensional Data Slots Holes 601-4000A other Abstract: .. 3500A to 4000A. .75" .75" .75" .5" 2.75" .44" 2.38" .38" .38" 2" 2.5" 2.53" Max. 2" 2.5" 2.78" Max. 3 .. datasheet abstract.. |
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First line: Bussmann Limitron Fast-Acting Class Fuses Volt Dimensional Data All other tolerances 601-6000A Abstract: .. 3500A to 4000A. 4500A to 5000A. 6000A. 1.75" 1.38" .81" .88" 1.75" 1.38" .88" 1.63" 6.75" 3.75" 1" 1 .. datasheet abstract.. |
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First line: SDD303KT 100mm RECTIFIER DIODE SDD303 rectifier diode features nominal 100mm diameter silicon Abstract: .. RC snubber required Maximum Average Current IF AV = 3500A @Tcase=100oC. PRINCIPAL LIMITS AND RATINGS PRINCIPAL LIMITS AND RATINGS PRINCIPAL LIMITS AND RATINGS PRINCIPAL LIMITS AND RATINGS .. datasheet abstract.. |
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First line: DCR1350F42 Phase Control Thyristor Preliminary Information DS5823-1.2 August LN25546 FEATURES Double Side Abstract: .. Threshold voltage – High level 1000A to 3500A at Tcase = 125°C - 1.000 V. rT On-state slope resistance – Low level 100A to 1000A at Tcase = 125°C - 0.5913 m . On-state slope resistance – High level 1000A .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules Daten preliminary data Werte Maximum rated Abstract: .. Rückstromspitze IF = 300A, - diF/dt = 3500A/μs peak reverse recovery current VR = 900V, VGE = -15V, Tvj = 25°C IRM - 330 - A VR = 900V, VGE = -15V, Tvj = 125°C - 350 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: DCR1830F22 Phase Control Thyristor Preliminary Information DS5866-1.1 August LN25532 FEATURES Double Side Abstract: .. Threshold voltage – High level 1100A to 3500A at Tcase = 125° C - 0.89 V. rT On-state slope resistance – Low level 100A to 1100A at Tcase = 125° C - 0.3231 m . On-state slope resistance – High level 1100A .. datasheet abstract.. |
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First line: DCR1640F28 Phase Control Thyristor Preliminary Information DS5824-1.2 August LN25539 FEATURES Double Side Abstract: .. Threshold voltage – High level 1000A to 3500A at Tcase = 125°C - 0.928 V. rT On-state slope resistance – Low level 100A to 1000A at Tcase = 125°C - 0.3967 m . On-state slope resistance – High level 1000A .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules KF6C Werte Maximum rated values Elektrische Abstract: .. Rückstromspitze IF = 600A, - diF/dt = 3500A/μsec peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C IRM - 430 - A VR = 900V, VGE = -10V, Tvj = 125°C - 520 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules KF6C Daten preliminary data Werte Maximum Abstract: .. Rückstromspitze IF = 600A, - diF/dt = 3500A/μsec peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C IRM - 430 - A VR = 900V, VGE = -10V, Tvj = 125°C - 520 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: Technische Information Technical Information IGBT-Module IGBT-Modules KF6C Werte Maximum rated values Elektrische Abstract: .. Rückstromspitze IF = 600A, - diF/dt = 3500A/μsec peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C IRM - 430 - A VR = 900V, VGE = -10V, Tvj = 125°C - 520 - A Sperrverzögerungsladung .. datasheet abstract.. |
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First line: DCR1350F42 Phase Control Thyristor Preliminary Information DS5823-1.0 January LN23749 FEATURES Double Side Abstract: .. Threshold voltage ‐ High level 1000A to 3500A at Tcase = 125° C - 1.000 V. rT On-state slope resistance ‐ Low level 100A to 1000A at Tcase = 125° C - 0.5913 mΩ. On-state slope resistance ‐ High level 1000A .. datasheet abstract.. |
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First line: TOSHIBA ST1500GXH22 TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST1500GXH22 HIGH POWER SWITCHING Abstract: .. ? ? ? = 20Ω/10Ω , Tj=125degC Di/dt=3500A/us Ls=<330nH? ? ? ? note.3 - 11.5 . μs. Turn-on loss. Eon - 7.6. 10 J Switching Dissipation of IEGT part ? ? note.3 Turn-off loss Eoff. ? VCC=2700V,IC=1500A .. datasheet abstract.. |
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First line: THYRISTOR MODULE PK PDPE 130FG UL E76102 Power Thyristor / Diode Module PK130FG series designed various rectifier Abstract: .. ● IT AV 130A, IT RMS 205A, ITSM 3500A?● di/dt 100A/μs?● dv/dt 1000V/μs. Applications Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches. Internal Configurations .. datasheet abstract.. |
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First line: THYRISTOR MODULE PK PDPE 130FG UL E76102 Power Thyristor / Diode Module PK130FG series designed various rectifier Abstract: .. ● IT AV 130A, IT RMS 205A, ITSM 3500A?● di/dt 100A/μs?● dv/dt 1000V/μs. Applications Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches. Internal Configurations .. datasheet abstract.. |
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First line: Digital Panel Meters Ammeters Voltmeters Type LDM30 AV1 / AV5 dummy zero µ-based digital Abstract: .. OFF OFF OFF ON 3.50A 35.0A 350A 3500A - 45.0V 450V 4500V. ON OFF OFF ON 4.00A 40.0A 400A 4000A - 50.0V 500V 5000V. OFF ON OFF ON 5.00A 50.0A 500A 5000A - 60.0V 600V 6000V. ON ON OFF ON 6.00A 60.0A 600A 6000A .. datasheet abstract.. |
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First line: Technische Information Technical Information Schnelle Diode Fast Diode Features Specially designed snubberless Abstract: .. decay rate of on-state current at turn-off iFM = 3500A, VCL = 3000V, clamp circuit Lσ ≤ 0,25 μH tvj = tvj max -diF/dt crit 1500 A/μs Charakteristische Werte / Characteristic values Gleichsperrspannung .. datasheet abstract.. |
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First line: DIM1200NSM12-E000 DIM1200NSM12-E000 Single Switch IGBT Module Replaces April version issue PDS5750-1.2 PDS5750-2.0 Abstract: .. dIF/dt = 3500A/μs. Parameter. Turn-off delay time. Fall time. Turn-off energy loss. Turn-on delay .. dIF/dt = 3500A/μs. Parameter. Turn-off delay time. Fall time. Turn-off energy loss. Turn-on delay .. datasheet abstract.. |
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First line: DIM1200DDM12-E000 DIM1200DDM12-E000 Dual Switch IGBT Module PDS5748-2.3 April FEATURES Trench Gate Field Abstract: .. dIF/dt = 3500A/μs. Parameter. Turn-off delay time. Fall time. Turn-off energy loss. Turn-on delay .. dIF/dt = 3500A/μs. Parameter. Turn-off delay time. Fall time. Turn-off energy loss. Turn-on delay .. datasheet abstract.. |
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First line: DF451 DF451 Fast Recovery Diode Replaces January version DS4142-5.0 DS4143-6.0 June FEATURES Abstract: .. IFSM 3500A. Qr 25μC. trr 1.22μs. 1600 1400 1200 1000. 800 600. DF451 16 DF451 14 DF451 12 DF451 10 DF451 .. datasheet abstract.. |
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First line: APTGT300U170D4G Single switch Trench Field Stop IGBT Power Module VCES 1700V 300A Abstract: .. = 125°C 525 ns Tj = 25°C 76 Qrr Reverse Recovery Charge IF = 300A VR = 900V di/dt =3500A/μs Tj = 125°C 124 μC. APTGT300U170D4G. APTGT300U170D4G – Rev 0 November, 2008. www.microsemi.com 3 - 5. Thermal and .. datasheet abstract.. |
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