NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: .151-0061 1-46-3 2002 2 25 TM 3 M27205 M27205 10 SkyRailTM SerDes UNH 10 ( 1463 / ) TM(NASDAQ:CNXT) )3 3.2Gbps 68x6834x3417x17 SONET(synchronous optical network)SAN(small storage area network) DWDM(dense wave division multiplexing) M21130 M21130 68x68M21120 34x34 M21110 M21110 17x17 (M21130 M21130 68x68 40%M21110 M21110 17x17 4 ) 17x17 1998 10 1999 , CDBGA(cavity down ball grid array) M21130 M21130 68x68 695 M21120 M21120 34x34 435 M21110 M21110 17x17 255 1000 ... | Original |
3 pages, |
M27205 M21130 M21120 M21110 M27205 abstract |
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| Abstract: ICON OC-48 OC-48 Products 8/20/2002 CX20507 CX20507: 3.3Gbps 34x34 Crosspoint Switch in 23mm x 23mm Package Last Time Buy Notice Mindspeed TechnologiesTM, A Conexant Business, is committed to providing its , Circuit Optical Networks (ICON) 3.3 Gbps 34x34 High Isolation Crosspoint Switch product, CX20507 CX20507, will be , 12/13/2002. Replacement Devices For new designs we recommend our ICON M21120 M21120 3.3 Gbps 34x34 High , Last Time Buy Notification Acknowledgement Form ICON CX20507 CX20507: 3.3Gbps 34x34 Crosspoint Switch The ... | Original |
2 pages, |
M21120 CX20507XPT OC-48 CX20507 OC-48 abstract |
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| Abstract: LED modules Thermally conductive adhesive transfer tapes 19x19 Ø28 34x34 Ø43 49x49 , Ref. No. X Adhesive pad 19x19 529158 Adhesive pad Ø28 536248 Adhesive pad 34x34 529155 , 34x34 0.25 37.5  50 0.6 3.9 x1011 /cm Ø43 0.20 76 0.8 1011 Adhesive ... | Original |
1 pages, |
WU-M-291 WU-M-292 WU-M-293 WU-M-294 WU-M-295 WU-M-291 abstract |
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| Abstract: ; www.bergquistcompany.com). Thermally conductive adhesive transfer tapes 19x19 Ø28 34x34 Ø43 49x49 306x11 , 0.6 3.9 x1011 34x34 0.25 37.5  50 0.6 3.9 x1011 Ø43 0.20 76 0.8 1011 , 0.8 1011 Adhesive pad 19x19 529158 Adhesive pad Ø28 536248 Adhesive pad 34x34 529155 ... | Original |
1 pages, |
X1011 datasheet abstract |
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| Abstract: leichter Druck erforderlich. Transferklebebänder 19x19 Ø28 34x34 Ø43 49x49 306x11 , Ø28 536248 Ø28 0,25 37,5  30 0,6 3,9 x1011 Klebepad 34x34 529155 34x34 ... | Original |
1 pages, |
19X19 x1011 WU-M-291 WU-M-292 WU-M-293 WU-M-294 WU-M-295 WU-M-291 abstract |
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| Abstract: > Product Overview M21111 M21111 3.2 Gbps 17x17 and M21121 M21121 3.2 Gbps 34x34 Crosspoint Switch The M21111/21 M21111/21, designed for today's demanding video, telecom and datacom switching applications are low-power , Product Brief M21111/21 M21111/21 3.2 Gbps 17x17/34x34 Crosspoint Switch In order to improve signal integrity , control methodology enabling a single PCB design to support both 17x17 and 34x34 system solutions. The , M21121 M21121 Switch Matrix 17x17 34x34 2.6 4 23 mm, 404 ball PBGA 23 mm, 404 ball PBGA ... | Original |
2 pages, |
pcb layout mindspeed MINDSPEED express card DVB Equalizer chart 424M 17X17 PBGA 23X23 M21111 M21121 M21111/21 M21111 abstract |
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| Abstract: TM A CONEXANT BUSINESS 34x34 3.2 Gbps Crosspoint Switch with Input Equalization M21120 M21120 Highest performance, lowest power crosspoint switch in the industry > K E Y F E AT U R E S > Low , demanding telecom and datacom applications, is a low-power, high-speed 34x34 crosspoint switch with input , Gbps Ethernet traffic. ation 34x34 Crosspoint product (CX20472 CX20472). The M21120 M21120 is a pin-for-pin , to a 34x34 Crosspoint with IE) and the M21130 M21130 (68x68 Crosspoint with IE). This upward with IE ... | Original |
2 pages, |
M21130 M21120 M21110 17X17 M21120 abstract |
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| Abstract: ,5Â50 0,6 3,9 x1011 Klebepad 34x34 529155 34x34 WU-M-294 WU-M-294 0,25 37,5Â50 0,6 ... | Original |
1 pages, |
8810 WU-M-294 datasheet abstract |
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| Abstract: R PK087 PK087 (v1.1) April 13, 2006 Ceramic Flip-Chip (CF1144 CF1144) With Column Attach Package 34X34-COLUMN CERAMIC FLIP-CHIP, 1.00MM PITCH (CF1144 CF1144) © 2006 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at http://www.xilinx.com/legal.htm. All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice. PK087 PK087 (v1.1) April 13, 2006 www.xilinx.com 1 ... | Original |
2 pages, |
Xilinx 34x34 PK087 CF1144 34X34-COLUMN PK087 abstract |
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| Abstract: Adhesive pad Ø28 536248 Ø28 0.25 37.5  30 1.0 PowerEmitter Adhesive pad 34x34 529155 34x34 0.25 37.5  50 0.5 WU-M-294 WU-M-294 Adhesive pad Ø43 536977 Ø43 0.20 ... | Original |
1 pages, |
WU-M-392 8815 k adhesive datasheet abstract |
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| Abstract: PROCESS CP630 CP630 Power Transistors PNP - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 80 MILS Die Thickness 8 MILS Base Bonding Pad Area 18 X 27 MILS Emitter Bonding Pad Area 34 X 34 MILS Top Side Metalization Al - 30,000Ã... Back Side Metalization Ti/Pd/Ag (20,000Ã...) GEOMETRY GROSS DIE PER 4 INCH WAFER 1,445 PRINCIPAL DEVICE TYPES CZT127 CZT127 CJD127 CJD127 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 1 ... | Original |
1 pages, |
ti 631 power transistor pnp darlington CZT127 CP630 CJD127 darlington transistor power CHIP TRANSISTOR "Darlington Transistor" CP630 abstract |
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| Abstract: PROCESS CP230 CP230 Power Transistors NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 80 MILS Die Thickness 8 MILS Base Bonding Pad Area 18 X 27 MILS Emitter Bonding Pad Area 34 X 34 MILS Top Side Metalization Al - 30,000Ã... Back Side Metalization Ti/Pd/Ag (20,000Ã...) GEOMETRY GROSS DIE PER 4 INCH WAFER 1,445 PRINCIPAL DEVICE TYPES CZT122 CZT122 CJD122 CJD122 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 1 ... | Original |
1 pages, |
CZT122 CP230 CJD122 darlington transistor power "Darlington Transistor" CP230 abstract |
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| Abstract: Part Number S2080 S2080 Revision 1.0 - January 25, 2001 S2080 S2080 Jitter Test Report 34 x 34 3.2 Gbps Differential Crosspoint Switch APPLICATION NOTE Introduction This document is intended to assist customers in using AMCC's S2080 S2080 34 x 34 port 3.2 Gbps Differential Crosspoint Switch. Eye diagrams are presented showing jitter performance with only one input/output pair switching (best case crosstalk condition) and are contrasted with eye diagrams where all inputs and outputs are active (worst ... | Original |
6 pages, |
S2080 eye pattern "Crosspoint Switch" S2080 abstract |
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| Abstract: PROCESS CP630 CP630 Power Transistor PNP - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 18 x 27 MILS Emitter Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 30,000Ã... Back Side Metalization Ti/Pd/Ag - 20,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 1,445 PRINCIPAL DEVICE TYPES CZT127 CZT127 CJD127 CJD127 R2 (22-March 2010) w w w. c e n t r a l s e m i ... | Original |
2 pages, |
CZT127 CP630 CJD127 "Darlington Transistor" CP630 abstract |
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| Abstract: PROCESS CP230 CP230 Power Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 18 x 27 MILS Emitter Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 30,000Ã... Back Side Metalization Ti/Pd/Ag - 20,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 1,445 PRINCIPAL DEVICE TYPES CZT122 CZT122 CJD122 CJD122 R2 (22-March 2010) w w w. c e n t r a l s e m i . c ... | Original |
2 pages, |
CZT122 CP230 CJD122 CP230 abstract |
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| Abstract: PROCESS CPD16 CPD16 Ultra Fast Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 14 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Ni/Au - 5,000Ã.../2,000Ã... Back Side Metalization Ni/Au - 5,000Ã.../2,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,250 PRINCIPAL DEVICE TYPES UES1001 UES1001 thru UES1003 UES1003 UF4001 UF4001 thru UF4007 UF4007 CMR1U-01 CMR1U-01 Series CMR1U-01M CMR1U-01M Series BACKSIDE CATHOD ... | Original |
2 pages, |
UF4007 UES1003 UES1001 CPD16 CMR1U-01 CMR1U-01M CPD16 abstract |
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| Abstract: PROCESS CPD16 CPD16 Ultra Fast Rectifier 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Ã... Back Side Metalization Au - 2,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES UES1001 UES1001 thru UES1003 UES1003 UF4001 UF4001 thru UF4007 UF4007 CMR1U-01 CMR1U-01 Series CMR1U-01M CMR1U-01M Series BACKSIDE CATHODE 145 Adams Ave ... | Original |
2 pages, |
UES1003 UES1001 diode uf4007 CPD16 CMR1U-01M CMR1U-01 uf4007 diode data sheet UF4007 CPD16 abstract |
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| Abstract: PROCESS CPD24 CPD24 Central Fast Recovery Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Ã... Back Side Metalization Au - 2,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 4,520 PRINCIPAL DEVICE TYPES 1N4933 1N4933 thru 1N4937 1N4937 1N4942 1N4942 thru 1N4948 1N4948 1N5615 1N5615 thru 1N5623 1N5623 CMR1F-0 ... | Original |
1 pages, |
CPD24 CMR1F-02M 1N5623 1N5615 1N4948 1N4942 1N4937 1N4933 CPD24 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| X Stream 34 x 34, 3.2 Gb/s Digital Crosspoint Switch Features Low Cost 34 x 34, Fully Differential, Nonblocking Array 3.2 Gbps per Port NRZ Data Rate Wide Power Supply Range: +2.5 V to +3.3 V Low Power: 2.0 W, @ +2.5 V (Outputs Enabled) PECL Compatible LVTTLCMOS/TTL-Level Control Inputs: @ 2.5 V to 3.3 V Low Jitter: 45 ps Drives a Backplane Directly Programmable Output Swing - 100 mV -1.6 V Differential - 50 Ω On-Chip I/O Termination - User-Controlled Voltage www.datasheetarchive.com/files/analog-devices/doc/productdescriptions/2008.html |
Analog Devices | 1.69 Kb | HTML | 2008.html | |
| Description= X Stream™ 34 x 34, 3.2 Gb/s Digital Crosspoint Switch Features Low Cost 34 x 34, Fully Differential, Nonblocking Array 3.2 Gbps per Port NRZ Data Rate Wide Power Supply Range: +2.5 V to +3.3 V Low Power: 2.0 W, @ +2.5 V (Outputs Enabled) PECL Compatible LVTTLCMOS/TTL-Level Control Inputs: @ 2.5 V to 3.3 V Low Jitter: 45 ps Drives a Backplane Directly Programmable Output Swing - 100 mV -1.6 V Differential - 50 Ω On-Chip I/O Termination - User-Controlled Voltage www.datasheetarchive.com/files/analog-devices/gendesc/1899.htm |
Analog Devices | 05/06/2003 | 1.76 Kb | HTM | 1899.htm |
| * AD8152 AD8152 AD8152 AD8152 Transmission Model * Description: Converter * Generic Desc: Digital Xpoint Switch, 34x34, 3.2Gbps * Developed by: SPL / ADI * Revision History: 08/10/2012 - Updated to new header style * 3.0 (04/2002) * Copyright 2001, 2012 by Analog Devices, Inc. * * Refer to for License Statement. Use of this model * indicates your acceptance with the terms and provisions in the License Statement www.datasheetarchive.com/files/analog-devices/static/spice_models/ad8152_1x1_v3.cir |
Analog Devices | 20/08/2012 | 4.68 Kb | CIR | ad8152_1x1_v3.cir |
| Xstream 3.2Gb/s, 34 x 34 Synchronous Crosspoint Feature-Rich, Lowest-Power Crosspoint Solution for High-Speed Networking Applications Features 34 Channels Running Up to 3.2 Gbps - Each Channel Includes CDR, Input EQ, and Output Premphasis - Drives 30 FR4 + 2 Connectors Directly Low Power: www.datasheetarchive.com/files/analog-devices/doc/productdescriptions/20642.html |
Analog Devices | 2.13 Kb | HTML | 20642.html | |
| Description= Xstream™ 3.2Gb/s, 34 x 34 Synchronous Crosspoint Feature-Rich, Lowest-Power Crosspoint Solution for High-Speed Networking Applications Features 34 Channels Running Up to 3.2 Gbps - Each Channel Includes CDR, Input EQ, and Output Premphasis - Drives 30Â" FR4 + 2 Connectors Directly Low Power: www.datasheetarchive.com/files/analog-devices/gendesc/2727.htm |
Analog Devices | 05/06/2003 | 2.19 Kb | HTM | 2727.htm |
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SGS-Thomson | 12/05/1995 | 1.2 Kb | MAP | spsa2bs.map |
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SGS-Thomson | 12/05/1995 | 2.05 Kb | MAP | grk2bs.map |
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SGS-Thomson | 12/05/1995 | 1.57 Kb | MAP | wst2ocrb.map |
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SGS-Thomson | 12/05/1995 | 2.42 Kb | MAP | wst2bsps.map |
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SGS-Thomson | 12/05/1995 | 2.16 Kb | MAP | cyr2bs.map |