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330nF

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 3.9nF 2.7nF 2.2nF 1.5nF 0805 X7R X5R 330nF 220nF 220nF 680nF 470nF 390nF 330nF 0805 , 6.8uF 4.7uF 3.3uF 1825 470nF 330nF 220nF 150nF 1825 X7R X5R 4.7uF 3.9uF 1.8uF , 2220 470nF 330nF 220nF 150nF (FA4/971/1) 15uF 12uF 10uF 6.8uF 2225 560nF 470nF 330nF 220nF 2220 X7R X5R 5.6uF 4.7uF 3.3uF 18uF 12uF 10uF 6.8uF 3640 5550 8060 330nF Syfer Technology
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220NF 10uf 470nF 0603 50V 470nF X7R 0603 50V 470nF 50V 10uF X7R 50/63V
Abstract: = 2,7W, CGE = 330nF, T vj = 25°C td,on Anstiegszeit (induktive Last) rise time (inductive , Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) - VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C tr VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C td,off Fallzeit (induktive Last) fall time (inductive load) VGE = ±15V, RG = 2,7W, CGE = 330nF, T Eupec
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FZ1200R33KL2 aic2300 kl2 diode FZ 44 NS
Abstract: 1 Vdd D1 R1 2 1mH-100mA C1 DRAIN 1 8 7 6 5 4 VIPER 22 Vdd 39V 500mW L1 Q1 BC557A R2 4K7 1/4 4k7 1/4 R3 22uF 50V 10K 1/4 CONTROL R4 10K1/4 SOURCE C6 330nF 16V 1 2 FB 10 -1W _10% 3 R7 1 D3 J1 C4 2 1 4 - + 3 L2 J2 1mH 1 2 C7 330nF 400VDC/470nF 400VDC R5 1R5_1/4_1% 330nF 16V BRIDGE CON2 2 CON2 D2 STTH1R06 Q2 BC547A + C8 330nF 400VDC C3 -
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VIPER 22 viper22 con2 6k8 1w 2.2uf 450V 1MH12 H-100 400VDC/470 STEVAL-ILL26V1 STEVAL-ILL026V1-SCHEMATIC
Abstract: JP1 JP5 1 2 3 C1 1 2 JP7 1 2 3D0 330nF LHPin RSPKout J6 J2 N.A , PGND 3D1 27 3D0 RHPin VCC 30 330nF 29 PGND 1 2 PVCCR JP6 ROUT , N.A. HPVCC HPout CP- 330nF LHP G0 13 32 HPVCC BEEP 12 1 2 31 , C4 C17 330nF R4 100k J9 HDEN 1uF 1 2 VCC C15 SPKREN RSPKin 1uF , J10 J11 N.A. 330nF N.A. 47k PCBEEPin VCC JP4 VCC HPVCC JP18 2 1 1 2 3 -
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JP16 JP18 DSASW003737 JP13 STEVAL-CCA019V1 TS4982
Abstract: =0V, f=100kHz, Tj=25oC VCC=1,650V, Ic=1,500A Ls=100nH RG=2.7â"¦/2.7â"¦, CGE=330nF (3) VGE=±15V, Tj , =125oC Ls=100nH, RG=2.7â"¦/2.7â"¦, Turn Off Loss J/P 2.4 CGE=330nF (3) Eoff(full) o 2.5 Tj=150 C V , '' Ls=100nH Vcc=1650V VG=±15V RG=2.7Ω CGE=330nF Tc=125â"ƒ 9.0 8.0 Eon(full) ï¼150â"ƒ) Ls=100nH Vcc=1650V VG=±15V RG=2.7Ω CGE=330nF Tc=125â"ƒ 5.5 5.0 IC V CE Eoff(full , ±15V RG=2.7Ω CGE=330nF Tc=125â"ƒ 2.5 Err(full) 2.0 Err(full) ï¼-40â"ƒï¼‰ 1.5 Err(10 Hitachi Semiconductor
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MBN1500E33E2 IGBT-SP-08002
Abstract: + + Speaker 12 330nF Cin2 8 Ohms 330nF P2 Cb 1uF BIAS STBY 2 4 5 STBY , , Cb=1uF, Cin=330nF 1 % PSRR Power Supply Rejection Ratio (1) F = 217Hz, RL = 8) Vripple = 200mVpp, Input Grounded, Cb=1uF, Cin=330nF 75 85 dB CMRR Common Mode Rejection Ratio (2) F = 217Hz, RL = 8, Vincm = 200mVpp, Cb = 1uF, Cin=330nF 45 61 dB Signal-to-Noise , 250mW rms, THD + N 20Hz < F < 20kHz, RL = 8, 0dB gain, Cb=1uF, Cin=330nF 380 % PSRR Power STMicroelectronics
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TS4974 DFN10 Dynamic Measurements JESD97 TS4974IQT
Abstract: application schematics VCC + 1uF Cs Vin+ + 330nF OUT1 DIFFERENTIAL INPUT STAGE 8 + VinOUT2 330nF BIAS TS4974 DIGITAL VOLUME CONTROL BYPASS 1uF + STBY Cb STDBY , , 0dB gain, Cb=1uF, Cin=330nF 1 % PSRR Power Supply Rejection Ratio1 F = 217Hz, RL = 8, ) Vripple = 200mVpp, Input Grounded, Cb=1uF, Cin=330nF 75 85 dB CMRR Common Mode Rejection Ratio2 F = 217Hz, RL = 8, Vincm = 200mVpp, Cb = 1uF, Cin=330nF 45 61 dB Signal-to-Noise STMicroelectronics
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A74 marking A74 marking amplifier a74 marking code TS4974IQ
Abstract: (MIP+MIN) LHP Amplifier Cin1 A1 MIP + 330nF MODE4: GxLIN Stereo Input Left LHP B6 16/32 Ohms PHG Amplifier Cin2 A2 Diff. input - MIN + 330nF Stereo Input Right , 330nF SE input right Cin4 RHP 16/32 Ohms D6 Select B4 A5 LIN RIN Stereo , Input Right 8 Ohms D2 MODE5: Gx(MIP+MIN) MODE6: Gx(LIN + RIN) MLO Amplifier + 330nF , SE input left Mode Cin3 + 330nF SE input right Cin4 RHP D6 Select B4 A5 STMicroelectronics
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AN2465 TS4956 trs stereo jack female jack pcb 3.5mm female stereo pins 3.5mm mono jack pinout female kp1040 trs connector audio connector RS232
Abstract: 150nF 220nF 270nF 330nF 470nF 820nF 1 F 2.2 4.7 10 22 F F F F 27 F 33 F 47 F 21 0402 0603 , 47nF 56nF 68nF 100nF 150nF 220nF 270nF 330nF 470nF 820nF 1 F 2.2 4.7 10 22 F F F F 27 F 33 F 47 F , 33nF 39nF 47nF 56nF 68nF 100nF 150nF 220nF 270nF 330nF 470nF 820nF 1 2.2 4.7 6.8 10 22 33 47 F F F F F , 27nF 33nF 39nF 47nF 56nF 68nF 100nF 150nF 220nF 270nF 330nF 470nF 820nF 1 2.2 4.7 6.8 10 22 33 47 F F F -
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capacitor 0402 X7R 100NF 50V 10 capacitor 0402 X7R 470NF 50V 10 capacitor 100nf 10v 0402 CHIP 15nF 50V X7R 0402 capacitor 33nf 50v 0402 ceramic capacitor 100pf 63V 100PF 330PF 470PF 680PF 1000PF
Abstract: housing LIE-202-# Test circuit: +15V uA78L12ACPK Signal and noise measurement @ 10Hz 330nF , +15V uA78L12ACPK 330nF 220nF FFT analyzer + OPA 129 47kOhm - 33nF OPA 129 , circuit: Signal and noise measurement @ 10Hz +15V uA78L06ACPK 330nF 220nF 100kOhm OPA 129 - TI (Burr-Brown) + - - + FFT analyzer OPA 129 + L79L06ACU 330nF 220nF , LIE-241-# Test circuit: Signal and noise measurement @ 10Hz +15V uA78L06ACPK 330nF 220nF Laser Components
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LIE-200 LIE-302 LME-300 LME-301 LME-316 LME-335 LIE-301 LIE-306 LME-351 LIE-502 LIE-202 LIE-216 LIE-235 LIE-241 LIE-245
Abstract: =25 C VCC=1,650V, Ic=1,500A L=100nH RG=2.7Ω/2.7Ω, CGE=330nF (3) o VGE=ï'±15V, Tj=125 C o IF , the newest revision. Turn On Loss J/P VCC=1,650V, Ic=1,500A, L=100nH, RG=2.7Ω/2.7Ω, CGE=330nF , ±15V RG=2.7Ω CGE=330nF Tc=125â"ƒ 8.0 Eon(full) ï¼150â"ƒ) 0 IC 10% 10% Eon(full , =100nH Vcc=1650V VG=±15V RG=2.7Ω CGE=330nF Tc=125â"ƒ 5.0 VCE 7.0 ã'Conditionsã'' 5.5 , ±15V RG=2.7Ω CGE=330nF Tc=125â"ƒ 5.0 Switching time, ton, tr, toff, tf, trr (μs) Reverse Hitachi Semiconductor
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IGBT-SP-10002 MBN1500E33E3
Abstract: 100nF 220nF 330nF 470nF 680nF 1uF 2.2uF 1 1 1 1 1 2 2 D 9.3 9.3 9.3 9.3 9.3 10.1 , +- BN074E0334+- BN074E0474+- BN074E0684+- BN074E0105+- - 100/63 33nF 47nF 100nF 220nF 330nF 470nF , +- BN104D0155+- BN104D0225+- - 63/40 220nF 330nF 470nF 680nF 1uF 1.5uF 2.2uF E0 E0 E0 E0 E0 , +- BN104E0474+- BN104E0684+- BN104E0105+- - 100/63 68nF 100nF 150nF 220nF 330nF 470nF 680nF 1000nF , +- BN104G0474+- - 250/115 33nF 47nF 68nF 100nF 150nF 220nF 330nF 470nF E0 E0 E0 E0 E0 4 4 AVX
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CPM-85 bn27 384-1/CECC 30000/UTE 384-2/CECC 30400/UTE
Abstract: 47nF 56nF 68nF 100nF 150nF 220nF 270nF 330nF 470nF 820nF 1 F 2.2 F 4.7 F 10 F , 68nF 100nF 150nF 220nF 270nF 330nF 470nF 820nF 1 F 2.2 F 4.7 F 10 F 22 F , 68nF 100nF 150nF 220nF 270nF 330nF 470nF 820nF 1 F 2.2 F 4.7 F 6.8 F 10 , 270nF 330nF 470nF 820nF 1 F 2.2 F 4.7 F 6.8 F 10 F 22 F 33 F Fenghua Advanced Technology
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capacitor 470nf 50v capacitor 33nF
Abstract: N.A. J5 N.A. VCC JP1 JP5 1 2 3 C1 1 2 JP7 1 2 3D0 330nF LHPin , 26 VCC JP8 PGND 3D1 27 3D0 RHPin VCC 30 330nF 29 PGND 1 2 , - CPVSS GND BYP 28 J4 7 G1 LSPKin 24 J16 HPout 12 330nF HPVCC BEEP , 2 1uF C5 JP12 C4 C17 330nF R4 100k J9 HDEN 1uF 1 2 VCC C15 , C6 1 2 J10 J11 N.A. 330nF N.A. 47k PCBEEPin VCC JP4 VCC HPVCC JP18 STMicroelectronics
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TS2012 QFN20 AM05060
Abstract: 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 100nF 220nF 330nF 470nF 560nF 680nF 1 2.2 3.3 4.7 10 22 , 10V 16V 25V 6.3V 10V 16V 25V 6.3V 10V 16V 25V 100nF 220nF 330nF 470nF 560nF 680nF 1 2.2 3.3 4.7 10 , 6.3V 10V 16V 25V Capacitance 100nF 220nF 330nF 470nF 560nF 680nF 1 2.2 3.3 4.7 10 22 33 47 100 F F F F , 220nF 330nF 470nF 560nF 680nF 1 2.2 3.3 4.7 10 22 33 F F F F F F F 102 Fenghua Advanced Fenghua Advanced Technology
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capacitor 330nf 63V capacitor 220nF 63V Multilayer Ceramic Capacitor 100nF 63V capacitor 1206 63V 470nF Capacitor 6.3v 22 680nF
Abstract: CC0805HY5V104ZTR 100nF 2.00 CC0805HY5V154ZTR 150nF 2.00 CC0805HY5V224ZTR 220nF 2.30 CC0805HY5V334ZTR 330nF 3.20 , CC1206HY5V104ZTR 100nF 2.25 CC1206HY5V154ZTR 150nF 2.95 CC1206HY5V224ZTR 220nF 3.80 CC1206HY5V334ZTR 330nF 3.50 , CC0603CY5V224ZTR 220nF 2.20 CC0603CY5V334ZTR 330nF 2.95 0805 (Metric Equiv' C2012) Part Number Value £/100 10nF , CC0805CY5V224ZTR 220nF 2.30 CC0805CY5V334ZTR 330nF 3.20 CC0805CY5V474ZTR 470nF 2.55 CC0805CY5V684ZTR 680nF 5.50 1uF , CC1206CY5V224ZTR 220nF 2.80 CC1206CY5V334ZTR 330nF 3.50 CC1206CY5V474ZTR 470nF 4.05 CC1206CY5V684ZTR 680nF 4.95 1uF -
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CC0805CY5V225ZTR 10nF 50V 0805 footprint X7R CC1206CY5V106Z CC0805CY5V334Z CC0603H CC0603CY5V104ZTR CC0603 CC0805 CC1206 C3216 CC0805CY5V473ZTR CC0805CY5V683ZTR
Abstract: o VCE=10V, VGE=0V, f=100kHz, Tj=25 C VCC=1,650V, Ic=1,500A L=100nH RG=2.7/2.7, CGE=330nF (3) o VGE , . VCC=1,650V, Ic=1,500A, L=100nH, RG=2.7/2.7, CGE=330nF (3) VGE=±15V IGBT MODULE Spec.No.IGBT-SP , TYPICAL 10.0 TYPICAL 6.0 Conditions Conditions Ls=100nH Vcc=1650V VG=±15V RG=2.7 CGE=330nF Tc=125 V CE Conditions Conditions Ls=100nH Vcc=1650V VG=±15V RG=2.7 CGE=330nF Tc=125 IC 9.0 , =±15V RG=2.7 CGE=330nF Tc=125 Conditions Conditions Ls=100nH Vcc=1650V VG=±15V RG=2.7 CGE=330nF Tc Hitachi Semiconductor
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330nf 250 v Hitachi DSA00281
Abstract: (ON) = 2.7 RG(OFF) = 4.7 Cge = 330nF Gate charge L 100nH EON Turn-on energy loss IC = 1200A, VGE = ±15V, VCE = 1800V,RG = 1.65 , Cge = 330nF, L~ 100nH Qrr Diode reverse , Parameter Rise time RG(ON) = 2.7 RG(OFF) = 4.7 Cge = 330nF, L 100nH EON Turn-on energy loss IC = 1200A, VGE = ±15V, VCE = 1800V,RG = 1.65 , Cge = 330nF, L~ 100nH Qrr Diode reverse , = 1200A, Vcc = 1800V, Cge = 330nF, Vge = ±15V 7000 Switching energy, Esw - (mJ Dynex
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DIM1200ESM33-F000 bi-directional switches IGBT DS5831-1 LN25870
Abstract: RIN- 3 Cin2 RIN+ Rin2 330nF Cin3 Rin3 330nF 25k P3 Cin4 12 LOUT , Diff. input R+ Left Speaker 8 Ohms Right Speaker RIGHT Rin4 330nF LOUT- + 3D 25k Diff. input R- LEFT P2 Diff. input L+ 3D1 330nF Vcc 3D0 Cin1 1uF 13 , VCC 1 2 3 16 Rin1 TS4997 - QFN16 24k 330nF Cin2 100nF Cn5 Rin2 24k 1 LI N- 2 LI N+ 4 330nF RIN- 3D1 Vcc 3D0 4 3 2 1 Cs2 13 Cin1 STMicroelectronics
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AN2514 amplifier QFN16
Abstract: 1KV 2KV 3KV 4KV 5KV R01 560nF/2 390nF/1.5 330nF/1 270nF/ 680nF 120nF , 7.5/10 6.2/6.8 2.7 1 330nF 180nF 100nF 33nF 18nF R06 39 28 24 18 6.8 3 1 470nF 330nF 100nF 47nF R07 33 27 22 10 6.8 2.4 820nF 560nF 330nF 220nF 82nF R08 47 33 22 16 10 4.7 1.8 820nF , 27nF 8.2nF R10 47 39 30 24 16 8 2.7 1.5 1 330nF 180nF R11 Holy Stone Enterprise
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390nf 820nF 502 25v 2kv R0639 r 221 1kv CV 203 1000/C
Abstract: = 2,7W, CGE = 330nF, T vj = 25°C td,on Anstiegszeit (induktive Last) rise time (inductive , Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) - VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C tr VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C td,off Fallzeit (induktive Last) fall time (inductive load) VGE = ±15V, RG = 2,7W, CGE = 330nF, T ABB Switzerland
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cosmi 1500E330305 5SYA2039 CH-5600 1500N330305
Abstract: C12 330nF C13 1 mF C14 100 pF C1N POS1 R10 1kW C9 68 pF R1 470 kW R2 39 kW , positive charge pump. Typically a 330nF flying capacitor is required. C2P 2 I/O Positive terminal of the flying capacitor for the positive charge pump. Typically a 330nF flying capacitor is , capacitor for the positive charge pump. Typically a 330-nF flying capacitor is required. C1N 6 27 , capacitor for the positive charge pump. Typically a 330-nF flying capacitor is required. Switch pin of ABB Switzerland
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5SNA1500E330305
Abstract: Vout+ Speaker 8 330nF Cin2 + 8 Ohms 330nF BIAS P2 Cb 1uF STBY 5 4 , 5 4 3 2 1 0 -1 -2 -3 -4 2.5 Cin=4.7 F Cin=330nF Cin=4.7 F Cin=4.7 F G=0dB Cin=330nF 20 100 10000 20k 1000 Frequency (Hz) Figure 34. Frequency response Figure , Cin=330nF Vcc = 5V, 3.3V, 2.6V ZL = 16 + 500pF Tamb = 25 ° C G=+12dB Cin=4.7 F G=+6dB Cin=330nF Cin=4.7 F 100 RL=8 0.5 0.4 RL=16 0.3 RL=32 0.2 0.0 0.0 10000 ABB Switzerland
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1300K450300
Abstract: + - uA78L12ACPK S3 Channel 3 + - +15V 220nF 330nF S4 Channel 4 - OPA 129 47kOhm , ®) Signal and noise @ 10Hz uA78L12ACPK S1 + +15V 220nF Channel 1 - 330nF S2 Channel 2 - , - 330nF S2 Channel 2 - OPA 129 47kOhm 33nF FFT analyzer + -15V Parameters , 330nF 220nF +15V OPA 129 - TI (Burr-Brown) 330kOhm FFT analyzer OPA 129 + Out2 L79L06ACU 330nF 220nF Channel 2 - + Parameters: Aperture size Element size / type Beamsplitter Thermal ABB Switzerland
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2000K450300
Abstract: 100nF C 3.3uF R 330nF C 10uF R HOW TO ORDER S9 13 4 G 0104 K ­­ Type Class Voltage Texas Instruments
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TPS65165 SLVS723A DO3316P-103 SLUA271 TPS65165RSBR
Abstract: C12 330nF C13 1 mF C14 100 pF C1N POS1 R10 1kW C9 68 pF R1 470 kW R2 39 kW , positive charge pump. Typically a 330nF flying capacitor is required. C2P 2 I/O Positive terminal of the flying capacitor for the positive charge pump. Typically a 330nF flying capacitor is , capacitor for the positive charge pump. Typically a 330-nF flying capacitor is required. C1N 6 27 , capacitor for the positive charge pump. Typically a 330-nF flying capacitor is required. Switch pin of Texas Instruments
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lcd t-con price
Abstract: (MIP+MIN) LHP Amplifier Cin1 A1 MIP + 330nF MODE4: GxLIN Stereo Input Left LHP B6 16/32 Ohms PHG Amplifier Cin2 A2 Diff. input - MIN + 330nF Stereo Input Right , 330nF SE input right Cin4 RHP 16/32 Ohms D6 Select B4 A5 LIN RIN Stereo , Input Right 8 Ohms D2 MODE5: Gx(MIP+MIN) MODE6: Gx(LIN + RIN) MLO Amplifier + 330nF , SE input left Mode Cin3 + 330nF SE input right Cin4 RHP D6 Select B4 A5 ABB Switzerland
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Abstract: 3.9nF 2.7nF 2.2nF 1.5nF 0805 X7R X5R 330nF 220nF 220nF 680nF 470nF 390nF 330nF 0805 , 6.8uF 4.7uF 3.3uF 1825 470nF 330nF 220nF 150nF 1825 X7R X5R 4.7uF 3.9uF 1.8uF , 2220 470nF 330nF 220nF 150nF (FA4/971/1) 15uF 12uF 10uF 6.8uF 2225 560nF 470nF 330nF 220nF 2220 X7R X5R 5.6uF 4.7uF 3.3uF 18uF 12uF 10uF 6.8uF 3640 5550 8060 330nF STMicroelectronics
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DFN10 thermal resistance rl892 VU MARKING ST MAKE
Abstract: application schematics VCC + 1uF Cs Vin+ + 330nF OUT1 DIFFERENTIAL INPUT STAGE 8 + VinOUT2 330nF BIAS TS4974 DIGITAL VOLUME CONTROL BYPASS 1uF + STBY Cb STDBY , , 0dB gain, Cb=1uF, Cin=330nF 1 % PSRR Power Supply Rejection Ratio1 F = 217Hz, RL = 8, ) Vripple = 200mVpp, Input Grounded, Cb=1uF, Cin=330nF 75 85 dB CMRR Common Mode Rejection Ratio2 F = 217Hz, RL = 8, Vincm = 200mVpp, Cb = 1uF, Cin=330nF 45 61 dB Signal-to-Noise Laser Components
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LIM-011 LIM-054 LIM-114 LIM-122 LIM-222 LIM-262 LMM-244 LMM-242 LIM-112 LIM-242 LIM-012 LIM-032 LIM-052
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