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APTM20DUM05G Microsemi Corporation Power Field-Effect Transistor, 317A I(D), 200V, 0.006ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP6, 7 PIN visit Digikey Buy
APTM20AM05FG Microsemi Corporation Power Field-Effect Transistor, 317A I(D), 200V, 0.005ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7 visit Digikey Buy
APTM20DAM05G Microsemi Corporation Power Field-Effect Transistor, 317A I(D), 200V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP6, 5 PIN visit Digikey Buy
APTM20SKM05G Microsemi Corporation Power Field-Effect Transistor, 317A I(D), 200V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP6, 5 PIN visit Digikey Buy

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317A-01

Catalog Datasheet MFG & Type PDF Document Tags

2N5109 motorola

Abstract: BFY90 MOTOROLA  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , MRF517 15/60 2200 7.5/300 -60 -72 -57 + 45 TO-39 BFW92A 5/2 4500* 3.0*/500 317A-01 MRF586 14/70 4500* 3.0/500 -50 -72 + 50 TO-39 BFR90 10/14 5000* 2.47500 317A-01 BFR91 5/35 5000* 1.97500 317A-01 BFR96 10/50 5000* 3.07500 317A-01 MRF961 10/50 5000* 2.07500 317-01 MRF962 10/50 5000
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2N3866A 2N5943 2N5583 MRF965 MM4049 2N5109 motorola BFY90 MOTOROLA bfr91 motorola MOTOROLA 2N5179 2N3866 2N5160 MM4018 2N3948 2N4427

2n5835

Abstract: 2n4957  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , MRF517 15/60 2200 7.5/300 -60 -72 -57 + 45 TO-39 BFW92A 5/2 4500* 3.0*/500 317A-01 MRF586 14/70 4500* 3.0/500 -50 -72 + 50 TO-39 BFR90 10/14 5000* 2.47500 317A-01 BFR91 5/35 5000* 1.97500 317A-01 BFR96 10/50 5000* 3.07500 317A-01 MRF961 10/50 5000* 2.07500 317-01 MRF962 10/50 5000
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MRF207 MRF502 MRF911 MRF544 MRF542 MRF543 2n5835 2n4957 rf power package selection guide mrf502 transistor motorola 2N3866 2N5109 2N5836 2N5837 MRF511 MRF525

900 mhz oscillator using bfr91 transistor

Abstract: Mrf648  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola , MRF517 15/60 2200 7.5/300 -60 -72 -57 + 45 TO-39 BFW92A 5/2 4500* 3.0*/500 317A-01 MRF586 14/70 4500* 3.0/500 -50 -72 + 50 TO-39 BFR90 10/14 5000* 2.47500 317A-01 BFR91 5/35 5000* 1.97500 317A-01 BFR96 10/50 5000* 3.07500 317A-01 MRF961 10/50 5000* 2.07500 317-01 MRF962 10/50 5000 , Emitter TO.-39 *Typ "V(BR)CBO Plastic â'" SOE â'" Case 317-01/317A-01 Gain -BW Noise Figure Gian
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900 mhz oscillator using bfr91 transistor Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 2N2857 2N3339 2N5179 MRF501 BFX89 BFY90

MRF965

Abstract: 2N5109 motorola  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of , * 3.0*/500 317A-01 MRF586 14/70 4500* 3.0/500 -50 -72 + 50 TO-39 BFR90 10/14 5000* 2.47500 317A-01 BFR91 5/35 5000* 1.97500 317A-01 BFR96 10/50 5000* 3.07500 317A-01 MRF961 10/50 5000
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2N6603 MRF901 high gain PNP RF TRANSISTOR 2n6603 transistor RF 2N3866 2N3866 MOTOROLA s parameters 2N3866 RF output Design 2N4958 2N4959 MRF904 2N6604

2N5109 motorola

Abstract: MRF536  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola , MRF517 15/60 2200 7.5/300 -60 -72 -57 + 45 TO-39 BFW92A 5/2 4500* 3.0*/500 317A-01 MRF586 14/70 4500* 3.0/500 -50 -72 + 50 TO-39 BFR90 10/14 5000* 2.47500 317A-01 BFR91 5/35 5000* 1.97500 317A-01 BFR96 10/50 5000* 3.07500 317A-01 MRF961 10/50 5000* 2.07500 317-01 MRF962 10/50 5000 , /317A-01 Gain -BW Noise Figure Gian Maximum Ratings h 'c NF f 'C dB f 'C PT Device Type GHz mA
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MRF931 MRF536 BFR90 application 244A-01 BFR90 transistor transistor MRF536 MRF914 317-01/317A-01 MRF559 MRF580 MRF581

317A-01

Abstract: 2N5583 15/60 2200 7.5/300 -60 -72 -57 + 45 TO-39 BFW92A 5/2 4500* 3.0*/500 317A-01 MRF586 14/70 4500* 3.0/500 -50 -72 + 50 TO-39 BFR90 10/14 5000* 2.47500 317A-01 BFR91 5/35 5000* 1.97500 317A-01 BFR96 10/50 5000* 3.07500 317A-01 MRF961 10/50 5000* 2.07500 317-01 MRF962 10/50 5000
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317A-01 transistor bfr96 MRF587 2N3959 2N3960

transistor MRF 254

Abstract: MRF561 VCBO Ve b o 'c Pd Chip 10 20 3.0 30 0.4 T j = 200°C max Case 317A-01 Case 317-01 Case 303-01 , 317A-01 CASE 317-01 SEATIN G PLA N E 0.100" CERAMIC STRIPLINE STYLE 1 : PIN 1 . 2. 3. 4
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MRF560 MRF561 transistor MRF 254 Motorola transistors M 724 R/High frequency MRF transistor 724 motorola NPN Transistor MRF562 MRF563 MRFC592

mrf502 gold transistor

Abstract: transistor 2n4959  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these , 17 200 2.50 tGrounded Emitter TO.-39 *Typ "V(BR)CBO Plastic â'" SOE â'" Case 317-01/317A-01 Gain
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MRF309 mrf502 gold transistor transistor 2n4959 MRF515 305A-01 MOTOROLA SELECTION mrf237 MRF2369 MRF313 2N6439 T0-205 2N4428 MRF5174 MRF321

case 317-01

Abstract: MRF2369  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these , .-39 *Typ "V(BR)CBO Plastic â'" SOE â'" Case 317-01/317A-01 Gain -BW Noise Figure Gian Maximum Ratings
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2N5947 case 317-01 RF Transistor Selection Y parameters of transistors case BFX89 2n3866 noise MRF571 MRF572

BFR90 transistor

Abstract: BFR90 application 317A­01, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector­Emitter Voltage , 0.065 G STYLE 2: PIN 1. COLLECTOR 2. EMITTER 3. BASE C CASE 317A­01 ISSUE B Motorola
Motorola
Original
BFR90 MOTOROLA BFR90D s-tech HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BFR90/D DEVICEBFR90/D

2n4427 MOTOROLA

Abstract: MRF536  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated
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2n4427 MOTOROLA motorola 2N4427 macro-X ceramic motorola rf Power Transistor MRF534

transistor bfr96

Abstract: BFR96 10 Watts mW/°C Storage Temperature Tstg ­ 65 to +150 °C CASE 317A­01, STYLE 2 , CASE 317A­01 ISSUE B MOTOROLA RF DEVICE DATA BFR96 5 Motorola reserves the right to make
Motorola
Original
BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts datasheet for transistor bfr96 motorola J50 BFR96 TRANSISTOR RF TRANSISTOR 1.5 GHZ BFR96/D DEVICEBFR96/D

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated
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2N5032 2N3866 MOTOROLA 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA RF POWER TRANSISTOR NPN, motorola 2N2857 JAN 2N3839 MM8009 2N5108 2N5829 2N5031 RF572/M

MRF931

Abstract: MRF961 Plastic â'" SOE â'" Case 317-01/317A-01 Gain -BW Noise Figure Gian Maximum Ratings h 'c NF f 'C
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MOTOROLA MASTER SELECTION GUIDE RF

MRF542

Abstract: MRF545  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated
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MRF545 2N33 mrf*965 317D-01

MOTOROLA SELECTION mrf237

Abstract: Motorola transistors MRF630  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated
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MRF604 MRF227 MRF629 mrf237 MOTOROLA MRF630 MOTOROLA 2N3553 motorola Transistor MRF630 Motorola transistors MRF629 MRF229 MRF553 MRF607 2N6255 2N3553

mrf8372

Abstract: Nitride Passivated Ion Implanted Arsenic Emitters CASE 317â'"01, STYLE 2 MACROâ'"X MRF837 â , 0.415 0.450 â'"â'"â'" 0.065 CASE 317â'"01 ISSUE E MRF837 SEATING PLANE 8 MILLIMETERS
Motorola
Original
mrf8372 MRF837/D MRF8372

2N5179

Abstract: high gain PNP RF TRANSISTOR  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated
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motorola european master selection transistors for uhf oscillators Selection guide of Transistors

MRF239

Abstract: MOTOROLA TRANSISTOR MRF239  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated
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MRF237 MRF260 MRF212 MRF262 MRF4070 MRF238 MRF239 MOTOROLA TRANSISTOR MRF239 mrf239 MOTOROLA T0-206AB T0-205AD 2N6080 T0-220AB

2N4427 equivalent bfr91

Abstract: bfr90 equivalent Typ c mA Device MHz v (BR)CEO Volts ·c mA PT mW Package Cas« 317A-01/2 - , available in various packages. Polarity ia NPN unlesa otherwise noted. Case Number 317A-01/2 Curve Number 1 , /1 318-06/6 317A-01/2 79-04/1 317A-01/2 317-01 2 303-01/1 26-03/1 (continued) -2 6/5 20/00 12.5 , 50 + 50 + 50 1.2 (20) 1.2 (20) 1.6(20) 18 15 15 17 13 13 13 20 1 Package/ Style 317A-0V2 317A-01
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OCR Scan
2N5503 2N4427 equivalent bfr91 bfr90 equivalent MRA1600-30 TPV-595A 2N3553 equivalent MRF138 MRF140 MRF148 MRF150 MRF153 MRF154
Showing first 20 results.