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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

30mW transistor

Catalog Datasheet MFG & Type PDF Document Tags

mosfet marking 12W

Abstract: transistor marking code 12W wires). Thermal Design of the Heat Sink: At Pout=7W, VDD=12.5V and Pin=30mW each stage transistor , =7W (VGG control), VDD=12.5V, Pin=30mW · Broadband Frequency Range: 68-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 1 Drain , 13.2 V VGG Gate Voltage VDD , Output Power T 68 Total Efficiency nd Harmonic MIN 7 W 38 VDD=12.5V,VGG=5V, Pin=30mW
Mitsubishi
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GP 809 DIODE

Abstract: GP 839 DIODE , Silicon MOSFET Power Transistor 527MHz,1W Zout* (f=890, 915, 941MHz) Zo=50ohm @Pin=30mW, Vds=7.2V,Idq , Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed , , Silicon MOSFET Power Transistor 527MHz,1W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED , threshold Voltage Output power Drain efficiency VGS=10V, VDS=0V VDS=7.2V, IDS=1mA VDD=7.2V, Pin=30mW f , FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W TYPICAL
Mitsubishi
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RD01MUS2B-101 GP 809 DIODE GP 839 DIODE 4406 mosfet diode zener 7.2v mosfet vhf power amplifier 527MH

GP 809 DIODE

Abstract: GP 007 DIODE Compliance, Silicon MOSFET Power Transistor 527MHz,1W Zout* (f=890, 915, 941MHz) Zo=50ohm @Pin=30mW, Vds , Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically , FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W , =7.2V, Pin=30mW 1.0 1.6 - W Drain efficiency f=527MHz , Idq= 40mA 60 70 - % , , Silicon MOSFET Power Transistor 527MHz,1W TYPICAL CHARACTERISTICS (These are only typical curves and
Mitsubishi
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GP 007 DIODE

RA07M0608M-101

Abstract: Pin-30mW wires). Thermal Design of the Heat Sink: At Pout=7W, VDD=7.2V and Pin=30mW each stage transistor , =6W (VGG control), VDD=7.2V, Pin=30mW · Broadband Frequency Range: 66-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V) · Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW 1 Drain , 9.2 V VGG Gate Voltage VDD , Output Power T 66 Total Efficiency nd Harmonic MIN 7 W 45 VDD=7.2V,VGG=5V, Pin=30mW
Mitsubishi
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RA07M0608M RA07M0608M-101 Pin-30mW RA07M0608 66-88MH 88-MH

RA07H0608M-01

Abstract: RA07H0608M =12.5V, Pin=30mW · Broadband Frequency Range: 68-88MHz · Low-Power Control Current IGG=1mA (typ) at VGG , (IDD0 @ VDD=12.5V, VGG=0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 1 Drain Voltage (VDD), Battery , Drain Voltage VGG , nd Harmonic VDD=12.5V,VGG=5V, Pin=30mW Pout=7W (VGG control), VDD=12.5V, Pin=30mW in , control), Load VSWR=4:1 - Load VSWR Tolerance VDD=13.2V, Pin=30mW, Pout=7W (VGG control), Load
Mitsubishi
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RA07H0608M RA07H0608M-01 68-88MH I-20041
Abstract: RF Input (Pin) RF Output (Pout) 5 â'¢ ηT>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW â , ‰0 @ VDD=7.2V, VGG=0V) â'¢ Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW 2 3 RF Ground (Case) PACKAGE , VGG , nd Harmonic VDD=7.2V,VGG=5V, Pin=30mW Pout=6W (VGG control), VDD=7.2V, Pin=30mW ρin , ), IDD Mitsubishi
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RA07H0608M-101

Abstract: RA07H0608M RF Input (Pin) RF Output (Pout) 5 · T>38% @ Pout=7W (VGG control), VDD=12.5V, Pin=30mW · , =0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 2 3 RF Ground (Case) PACKAGE CODE: H46S RoHS , , VDD=12.5V,VGG=5V, Pin=30mW Pout=7W (VGG control), VDD=12.5V, Pin=30mW in Input VSWR IGG , - Load VSWR Tolerance VDD=13.2V, Pin=30mW, Pout=7W (VGG control), Load VSWR=20:1 No
Mitsubishi
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RA07H0608M-101 07H0608

RA07M0608M

Abstract: RA07M0608M-101 Heat Sink: At Pout=7W, VDD=7.2V and Pin=30mW each stage transistor operating conditions are: Pin , RF Input (Pin) RF Output (Pout) 5 · T>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW · , =0V) · Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW 2 3 RF Ground (Case) PACKAGE CODE: H46S RoHS , 9.2 V VGG Gate Voltage VDD , =7.2V,VGG=5V, Pin=30mW Pout=6W (VGG control), VDD=7.2V, Pin=30mW in Input VSWR IGG Gate
Mitsubishi
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07M0608

RA07M0608M

Abstract: RF MOSFET MODULE Heat Sink: At Pout=7W, VDD=7.2V and Pin=30mW each stage transistor operating conditions are: Pin , =6W (VGG control), VDD=7.2V, Pin=30mW · Broadband Frequency Range: 66-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V) · Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW 1 Drain , 9.2 V VGG Gate Voltage VDD , Pout=6W (VGG control), VDD=7.2V, Pin=30mW Gate Current - Stability VDD=6.0-9.2V, Pin
Mitsubishi
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RF MOSFET MODULE

hatfield attenuator

Abstract: RA07H060 =12.5V, Pin=30mW Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) 5 · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 2 4 · Enhancement-Mode MOSFET Transistors (IDD0 @ , Pout Output Power T TYP VDD=12.5V,VGG=5V, Pin=30mW MAX UNIT 88 68 Total Efficiency nd MIN MHz 7 W 38 % Pout=7W (VGG control), VDD=12.5V, Pin=30mW 2fo 2 ,
Mitsubishi
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hatfield attenuator RA07H060 metwn f88m RA07H0608M-E01
Abstract: =3.3V and Pin=30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , =3.3V, VGG=2.0V, Pin=30mW Gate Voltage (VGG), Power Control 3 FEATURES â'¢ Enhancement-Mode MOSFET , 2 Harmonic in CONDITIONS VDD=3.3V VGG=2.0V PiN=30mW Input VSWR VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, â'" Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW, Pout , 50 45 3 VDD=3.3V VGG=2.0V Pin=30mW Pout 2 35 30 25 20 15 1 HARMONICS (dBc Mitsubishi
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RA01L8693MA 865-928MH

MOSFET Power Amplifier Module 900Mhz

Abstract: RA01L8693MA =3.3V and Pin=30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , =2.0V, Pin=30mW Gate Voltage (VGG), Power Control 3 FEATURES · Enhancement-Mode MOSFET Transistors , in CONDITIONS VDD=3.3V VGG=2.0V PiN=30mW Input VSWR VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, - Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW, Pout =2W (VGG control), Zg , , TOTAL EFFICIENCY, versus FREQUENCY 5 2nd, 3 -30 50 45 3 VDD=3.3V VGG=2.0V Pin=30mW
Mitsubishi
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MOSFET Power Amplifier Module 900Mhz GP20
Abstract: RF Input (Pin) RF Output (Pout) 5 â'¢ ηT>38% @ Pout=7W (VGG control), VDD=12.5V, Pin=30mW , (IDDâ‰0 @ VDD=12.5V, VGG=0V) â'¢ Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 2 3 RF Ground (Case , Drain Voltage VGG , ηT Total Efficiency 2fo 2 nd Harmonic VDD=12.5V,VGG=5V, Pin=30mW Pout=7W (VGG control), VDD=12.5V, Pin=30mW ρin Input VSWR IGG Gate Current â'" Stability VDD Mitsubishi
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RF MOSFET MODULE

Abstract: RA07H0608 Heat Sink: At Pout=7W, VDD=12.5V and Pin=30mW each stage transistor operating conditions are: Pin , =7W (VGG control), VDD=12.5V, Pin=30mW · Broadband Frequency Range: 68-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 1 Drain , Drain Voltage 16 VDD Drain Voltage Gate Voltage VDD , Pout=7W (VGG control), VDD=12.5V, Pin=30mW Gate Current - Stability VDD=7.2-13.2V, Pin
Mitsubishi
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RA07H0608

transistor 9527

Abstract: T 9527 Pout=1.4W, VDD=3.3V and Pin=30mW each stage transistor operating conditions are: Pin Pout Rth , Voltage (VDD), Battery 4 RF Output (Pout) 5 · Pout>1.4W, T>35% @ VDD=3.3V, VGG=2.0V, Pin=30mW , =2.0V PiN=30mW Input VSWR VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, - Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW, Pout =2W (VGG control), Zg=50ohm, Load VSWR=20:1 Zg , =2.0V Pin=30mW 3 Pout 2 35 30 25 20 15 1 -35 HARMONICS (dBc) 4 TOTAL EFFICIENCY
Mitsubishi
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transistor 9527 T 9527 st 9535 data sheet transistor 9527 9542 mitsubishi RA01L9595M 952-954MH

mosfet st 9544

Abstract: =3.3V and Pin=30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , =2.0V, Pin=30mW Gate Voltage (VGG), Power Control 3 FEATURES â'¢ Enhancement-Mode MOSFET , â'" Total Efficiency nd 2fo 2 Harmonic in VDD=3.3V VGG=2.0V PiN=30mW , VDD=6.0V, PiN=30mW, Pout =2W (VGG control), Zg=50ohm, Load VSWR=20:1 Zg=50ohm, â'" Po , EFFICIENCY, versus FREQUENCY 5 -30 50 40 T VDD=3.3V VGG=2.0V Pin=30mW 3 Pout 2 35
Mitsubishi
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mosfet st 9544

transistor 9527

Abstract: 9544 transistor =3.3V and Pin=30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , · Pout>1.4W, T>35% @ VDD=3.3V, VGG=2.0V, Pin=30mW PACKAGE CODE: H58 · Frequency Range , Efficiency nd in Harmonic Pout(2) Output Power VDD=3.3V VGG=2.0V PiN=30mW Input VSWR Total Efficiency -30 VDD=5.0V, VGG=2.0V ,PiN=30mW VDD=5.0V PiN=30mW,POUT=2W (VGG control) VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW
Mitsubishi
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9544 transistor transistor 9529 9522 transistor RA Series RF MOSFET MODULE ra transistor 1w 9533

ra01l8693ma

Abstract: RF MOSFET MODULE ra required. Thermal Design of the Heat Sink: At Pout=1.4W, VDD=3.3V and Pin=30mW each stage transistor , · Pout>1.4W, T>38% @ VDD=3.3V, VGG=2.0V, Pin=30mW PACKAGE CODE: H58 · Broadband Frequency , =2.0V PiN=30mW Total Efficiency VDD=5.0V,VGG=2.0V, PiN=30mW VDD=5.0V PiN=30mW,POUT=2W (VGG control) VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW , (witch makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto the
Mitsubishi
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MITSUBISHI marking example
Abstract: Primary-side control for eliminating opto-coupler 10mW no-load input power Built-in 700V transistor/650V , -6 TV/STB AP3106 24W AP4312 Diodes
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AP3988 AP3983 AP3776 APR3415 AP3785

RA01L8693MA

Abstract: RF MOSFET MODULE required. Thermal Design of the Heat Sink: At Pout=1.4W, VDD=3.3V and Pin=30mW each stage transistor , =2.0V, Pin=30mW Gate Voltage (VGG), Power Control 3 FEATURES · Enhancement-Mode MOSFET Transistors , =3.3V VGG=2.0V PiN=30mW 2fo 2 -30 in Input VSWR - Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW, Pout =2W (VGG control), Zg=50ohm, Load VSWR=20:1 dBc 4.4 , the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto the substrate
Mitsubishi
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