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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIBPAL16R6-30MWB Texas Instruments Low-Power High-Performance Impact<TM> PAL<R> Circuits 20-CFP -55 to 125 visit Texas Instruments
TIBPAL16L8-30MWB Texas Instruments Low-Power High-Performance Impact PAL Circuits 20-CFP -55 to 125 visit Texas Instruments

30mW transistor

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mosfet marking 12W

Abstract: transistor marking code 12W wires). Thermal Design of the Heat Sink: At Pout=7W, VDD=12.5V and Pin=30mW each stage transistor , =7W (VGG control), VDD=12.5V, Pin=30mW · Broadband Frequency Range: 68-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 1 Drain , 13.2 V VGG Gate Voltage VDD , Output Power T 68 Total Efficiency nd Harmonic MIN 7 W 38 VDD=12.5V,VGG=5V, Pin=30mW
Mitsubishi
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GP 809 DIODE

Abstract: GP 839 DIODE , Silicon MOSFET Power Transistor 527MHz,1W Zout* (f=890, 915, 941MHz) Zo=50ohm @Pin=30mW, Vds=7.2V,Idq , Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed , , Silicon MOSFET Power Transistor 527MHz,1W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED , threshold Voltage Output power Drain efficiency VGS=10V, VDS=0V VDS=7.2V, IDS=1mA VDD=7.2V, Pin=30mW f , FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W TYPICAL
Mitsubishi
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RD01MUS2B-101 GP 809 DIODE GP 839 DIODE 4406 mosfet diode zener 7.2v mosfet vhf power amplifier 527MH

GP 809 DIODE

Abstract: GP 007 DIODE Compliance, Silicon MOSFET Power Transistor 527MHz,1W Zout* (f=890, 915, 941MHz) Zo=50ohm @Pin=30mW, Vds , Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically , FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W , =7.2V, Pin=30mW 1.0 1.6 - W Drain efficiency f=527MHz , Idq= 40mA 60 70 - % , , Silicon MOSFET Power Transistor 527MHz,1W TYPICAL CHARACTERISTICS (These are only typical curves and
Mitsubishi
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GP 007 DIODE

RA07M0608M-101

Abstract: Pin-30mW wires). Thermal Design of the Heat Sink: At Pout=7W, VDD=7.2V and Pin=30mW each stage transistor , =6W (VGG control), VDD=7.2V, Pin=30mW · Broadband Frequency Range: 66-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V) · Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW 1 Drain , 9.2 V VGG Gate Voltage VDD , Output Power T 66 Total Efficiency nd Harmonic MIN 7 W 45 VDD=7.2V,VGG=5V, Pin=30mW
Mitsubishi
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RA07M0608M RA07M0608M-101 Pin-30mW RA07M0608 66-88MH 88-MH

RA07H0608M-01

Abstract: RA07H0608M =12.5V, Pin=30mW · Broadband Frequency Range: 68-88MHz · Low-Power Control Current IGG=1mA (typ) at VGG , (IDD0 @ VDD=12.5V, VGG=0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 1 Drain Voltage (VDD), Battery , Drain Voltage VGG , nd Harmonic VDD=12.5V,VGG=5V, Pin=30mW Pout=7W (VGG control), VDD=12.5V, Pin=30mW in , control), Load VSWR=4:1 - Load VSWR Tolerance VDD=13.2V, Pin=30mW, Pout=7W (VGG control), Load
Mitsubishi
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RA07H0608M RA07H0608M-01 68-88MH I-20041
Abstract: RF Input (Pin) RF Output (Pout) 5 â'¢ ηT>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW â , ‰0 @ VDD=7.2V, VGG=0V) â'¢ Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW 2 3 RF Ground (Case) PACKAGE , VGG , nd Harmonic VDD=7.2V,VGG=5V, Pin=30mW Pout=6W (VGG control), VDD=7.2V, Pin=30mW ρin , ), IDD Mitsubishi
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RA07H0608M-101

Abstract: RA07H0608M RF Input (Pin) RF Output (Pout) 5 · T>38% @ Pout=7W (VGG control), VDD=12.5V, Pin=30mW · , =0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 2 3 RF Ground (Case) PACKAGE CODE: H46S RoHS , , VDD=12.5V,VGG=5V, Pin=30mW Pout=7W (VGG control), VDD=12.5V, Pin=30mW in Input VSWR IGG , - Load VSWR Tolerance VDD=13.2V, Pin=30mW, Pout=7W (VGG control), Load VSWR=20:1 No
Mitsubishi
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RA07H0608M-101 07H0608

RA07M0608M

Abstract: RA07M0608M-101 Heat Sink: At Pout=7W, VDD=7.2V and Pin=30mW each stage transistor operating conditions are: Pin , RF Input (Pin) RF Output (Pout) 5 · T>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW · , =0V) · Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW 2 3 RF Ground (Case) PACKAGE CODE: H46S RoHS , 9.2 V VGG Gate Voltage VDD , =7.2V,VGG=5V, Pin=30mW Pout=6W (VGG control), VDD=7.2V, Pin=30mW in Input VSWR IGG Gate
Mitsubishi
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07M0608

RA07M0608M

Abstract: RF MOSFET MODULE Heat Sink: At Pout=7W, VDD=7.2V and Pin=30mW each stage transistor operating conditions are: Pin , =6W (VGG control), VDD=7.2V, Pin=30mW · Broadband Frequency Range: 66-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V) · Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW 1 Drain , 9.2 V VGG Gate Voltage VDD , Pout=6W (VGG control), VDD=7.2V, Pin=30mW Gate Current - Stability VDD=6.0-9.2V, Pin
Mitsubishi
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RF MOSFET MODULE

hatfield attenuator

Abstract: RA07H060 =12.5V, Pin=30mW Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) 5 · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 2 4 · Enhancement-Mode MOSFET Transistors (IDD0 @ , Pout Output Power T TYP VDD=12.5V,VGG=5V, Pin=30mW MAX UNIT 88 68 Total Efficiency nd MIN MHz 7 W 38 % Pout=7W (VGG control), VDD=12.5V, Pin=30mW 2fo 2 ,
Mitsubishi
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hatfield attenuator RA07H060 metwn f88m RA07H0608M-E01
Abstract: =3.3V and Pin=30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , =3.3V, VGG=2.0V, Pin=30mW Gate Voltage (VGG), Power Control 3 FEATURES â'¢ Enhancement-Mode MOSFET , 2 Harmonic in CONDITIONS VDD=3.3V VGG=2.0V PiN=30mW Input VSWR VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, â'" Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW, Pout , 50 45 3 VDD=3.3V VGG=2.0V Pin=30mW Pout 2 35 30 25 20 15 1 HARMONICS (dBc Mitsubishi
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RA01L8693MA 865-928MH

MOSFET Power Amplifier Module 900Mhz

Abstract: RA01L8693MA =3.3V and Pin=30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , =2.0V, Pin=30mW Gate Voltage (VGG), Power Control 3 FEATURES · Enhancement-Mode MOSFET Transistors , in CONDITIONS VDD=3.3V VGG=2.0V PiN=30mW Input VSWR VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, - Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW, Pout =2W (VGG control), Zg , , TOTAL EFFICIENCY, versus FREQUENCY 5 2nd, 3 -30 50 45 3 VDD=3.3V VGG=2.0V Pin=30mW
Mitsubishi
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MOSFET Power Amplifier Module 900Mhz GP20
Abstract: RF Input (Pin) RF Output (Pout) 5 â'¢ ηT>38% @ Pout=7W (VGG control), VDD=12.5V, Pin=30mW , (IDDâ‰0 @ VDD=12.5V, VGG=0V) â'¢ Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 2 3 RF Ground (Case , Drain Voltage VGG , ηT Total Efficiency 2fo 2 nd Harmonic VDD=12.5V,VGG=5V, Pin=30mW Pout=7W (VGG control), VDD=12.5V, Pin=30mW ρin Input VSWR IGG Gate Current â'" Stability VDD Mitsubishi
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RF MOSFET MODULE

Abstract: RA07H0608 Heat Sink: At Pout=7W, VDD=12.5V and Pin=30mW each stage transistor operating conditions are: Pin , =7W (VGG control), VDD=12.5V, Pin=30mW · Broadband Frequency Range: 68-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW 1 Drain , Drain Voltage 16 VDD Drain Voltage Gate Voltage VDD , Pout=7W (VGG control), VDD=12.5V, Pin=30mW Gate Current - Stability VDD=7.2-13.2V, Pin
Mitsubishi
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RA07H0608

transistor 9527

Abstract: T 9527 Pout=1.4W, VDD=3.3V and Pin=30mW each stage transistor operating conditions are: Pin Pout Rth , Voltage (VDD), Battery 4 RF Output (Pout) 5 · Pout>1.4W, T>35% @ VDD=3.3V, VGG=2.0V, Pin=30mW , =2.0V PiN=30mW Input VSWR VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, - Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW, Pout =2W (VGG control), Zg=50ohm, Load VSWR=20:1 Zg , =2.0V Pin=30mW 3 Pout 2 35 30 25 20 15 1 -35 HARMONICS (dBc) 4 TOTAL EFFICIENCY
Mitsubishi
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transistor 9527 T 9527 st 9535 9542 mitsubishi RA01L9595M 952-954MH

mosfet st 9544

Abstract: =3.3V and Pin=30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , =2.0V, Pin=30mW Gate Voltage (VGG), Power Control 3 FEATURES â'¢ Enhancement-Mode MOSFET , â'" Total Efficiency nd 2fo 2 Harmonic in VDD=3.3V VGG=2.0V PiN=30mW , VDD=6.0V, PiN=30mW, Pout =2W (VGG control), Zg=50ohm, Load VSWR=20:1 Zg=50ohm, â'" Po , EFFICIENCY, versus FREQUENCY 5 -30 50 40 T VDD=3.3V VGG=2.0V Pin=30mW 3 Pout 2 35
Mitsubishi
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mosfet st 9544

transistor 9527

Abstract: 9544 transistor =3.3V and Pin=30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , · Pout>1.4W, T>35% @ VDD=3.3V, VGG=2.0V, Pin=30mW PACKAGE CODE: H58 · Frequency Range , Efficiency nd in Harmonic Pout(2) Output Power VDD=3.3V VGG=2.0V PiN=30mW Input VSWR Total Efficiency -30 VDD=5.0V, VGG=2.0V ,PiN=30mW VDD=5.0V PiN=30mW,POUT=2W (VGG control) VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW
Mitsubishi
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9544 transistor transistor 9529 9522 transistor RA Series RF MOSFET MODULE ra transistor 1w 9533

ra01l8693ma

Abstract: RF MOSFET MODULE ra required. Thermal Design of the Heat Sink: At Pout=1.4W, VDD=3.3V and Pin=30mW each stage transistor , · Pout>1.4W, T>38% @ VDD=3.3V, VGG=2.0V, Pin=30mW PACKAGE CODE: H58 · Broadband Frequency , =2.0V PiN=30mW Total Efficiency VDD=5.0V,VGG=2.0V, PiN=30mW VDD=5.0V PiN=30mW,POUT=2W (VGG control) VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW , (witch makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto the
Mitsubishi
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MITSUBISHI marking example
Abstract: Primary-side control for eliminating opto-coupler 10mW no-load input power Built-in 700V transistor/650V , -6 TV/STB AP3106 24W AP4312 Diodes
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AP3988 AP3983 AP3776 APR3415 AP3785

RA01L8693MA

Abstract: RF MOSFET MODULE required. Thermal Design of the Heat Sink: At Pout=1.4W, VDD=3.3V and Pin=30mW each stage transistor , =2.0V, Pin=30mW Gate Voltage (VGG), Power Control 3 FEATURES · Enhancement-Mode MOSFET Transistors , =3.3V VGG=2.0V PiN=30mW 2fo 2 -30 in Input VSWR - Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN=30mW, Pout =2W (VGG control), Zg=50ohm, Load VSWR=20:1 dBc 4.4 , the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto the substrate
Mitsubishi
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