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30a snubber circuit
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G2000VC450Abstract: GTO thyristor circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit , fixed by the snubber circuit time constant, which must be allowed to fully discharge before the GTO , snubber circuit. Voltage will continue to rise across DUT until Dc turnson at a voltage set by the , ITGQM Maximum peak turnoff current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2 , A/µs Notes: 1) VGK2Volts. 2) Tj=125°C, VD=67%VDM, VDM 
Westcode Semiconductors Original 


G1500NAbstract: over the normal operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS , GTO at turnon) the actual minimum ontime will usually be fixed by the snubber circuit time constant , across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT , Maximum controllable onstate current, (note 2) Snubber loop inductance, ITM=ITGQM, (note 2) Mean onstate 
Westcode Semiconductors Original 


G2000VC250Abstract: GTO thyristor curves are effective over the normal operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed , snubber circuit time constant, which must be allowed to fully discharge before the GTO thyristor is , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will , Cs DUT Vc Cd RCD snubber Diagram 10, Turnoff test circuit. The definitions of 
Westcode Semiconductors Original 


GTO thyristor 1200V 100AAbstract: 10A fast Gate Turnoff Thyristor operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls , will usually be fixed by the snubber circuit time constant, which must be allowed to fully discharge , Gatedrive DUT RCD snubber Diagram 10, Turnoff test circuit. The definitions of turnoff parameters , W kW A V µs µs °C °C 2 Peak turnoff current, (note 2) Snubber loop inductance, ITM=ITGQ, (note 
Westcode Semiconductors Original 


Westcode SemiconductorsAbstract: H0500KC device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , minimum ontime will usually be fixed by the snubber circuit time constant, which must be allowed to , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will , DUT RCD snubber Diagram 10, Turnoff test circuit. The definitions of turnoff parameters used , Maximum peak turnoff current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2) 0.3 µH 
Westcode Semiconductors Original 


H0700KCAbstract: GTO thyristor 1200V 50A operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls , ) the actual minimum ontime will usually be fixed by the snubber circuit time constant, which must be , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will , Cd RCD snubber Diagram 10, Turnoff test circuit. The definitions of turnoff parameters used 
Westcode Semiconductors Original 


Abstract: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls , minimum ontime will usually be fixed by the snubber circuit time constant, which must be allowed to , across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT , snubber Diagram 10, Turnoff test circuit. The definitions of turnoff parameters used in the 
Westcode Semiconductors Original 


Abstract: circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is , across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT , snubber Diagram 10, Turnoff test circuit. The definitions of turnoff parameters used in the , Maximum peak turnoff current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2) 0.3 , =50%VDRM, ITGQ=500A, IGM=30A, diG/dt=15A/Âµs Âµs  0.5  VGT IGT td Gate trigger voltage 
Westcode Semiconductors Original 


MKPX2Abstract: gas turbine ignition system Snubber Capacitors Variable terminations SnubberMKP/FKP W1UA MKP 0M7 2000rao GTO Capacitors , >300.000 h â Highest du/dt Snubber 0.01 JUF25/JF 2504000VDC Variable contacts SHs Em Snubber , >300.000 h â High reliability against active or passive flammability (MP) Snubber Capacitors 0.01 /jF  25/JF 250  4000 VDC Variable terminations H Snubber MKP/FKP Snubber MKP/FKP Snubber MKP/FKP â , Snubber Cap. O.OI/JF25/JF 2504000VDC Variable terminations WW* 10.047 I i Solito 2000W?  Snubber MKP 
 OCR Scan 

MKPX2 gas turbine ignition system PE 1000 MKP WIMA MKS 3 airbag control unit FKP1 2000TOO F220/ 502000VDC 
GTO 100A IXYSAbstract: GTO thyristor snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland , fixed by the snubber circuit time constant, which must be allowed to fully discharge before the GTO , snubber circuit. Voltage will continue to rise across DUT until Dc turnson at a voltage set by the , ITGQM Maximum peak turnoff current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2 , , reapplied voltage VD=VR10V. 5) IT=2000A repetitive, IGM=30A, diGM/dt=40A/µs, for higher di/dt please 
Westcode Semiconductors Original 

GTO 100A IXYS GTO thyristor GTO thyristor 10A G3000TC 40A GTO thyristor anode gate thyristor G3000TC250 D68623 
SC454Abstract: SC452 virtually eliminated Snubber SmartDriveTM Page 3 Semtech Confidential October, 2007 Semtech , thermal pad Page 5 Snubber SmartDriveTM Semtech Confidential October, 2007 IMVP6/6+ LV/ULV , # support · Use Rsense or DCRsense · 32L MLP 5x5 · In Production Page 6 Snubber SmartDriveTM Semtech Confidential October, 2007 SC454 Application Schematic Snubber SmartDriveTM Page 7 , Droop Power Monitor Page 8 Snubber SmartDriveTM Semtech Confidential October, 2007 
Semtech Original 

SC452 SC440 SC441 SC412A SC415 SC416 SC183 GPU board diagram SC189 SC560C 
GTO thyristor Application notesAbstract: S0500KC25 assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an , turnon) the actual minimum ontime will usually be fixed by the snubber circuit time constant, which must , across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT , W kW A V µs µs °C °C 2 Peak turnoff current, (note 2) Snubber loop inductance, ITM=ITGQ, (note , which the gate circuit is required to remain low impedance to allow for the passage of tail current 
Westcode Semiconductors Original 

S0500KC25 GTO thyristor Application notes s0500 
Abstract: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls , minimum ontime will usually be fixed by the snubber circuit time constant, which must be allowed to , across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT , snubber Diagram 10, Turnoff test circuit. The definitions of turnoff parameters used in the 
Westcode Semiconductors Original 

S0500KC25G 
N1467NSAbstract: N1467NS260 25Â°C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory , local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated 
Westcode Semiconductors Original 

N1467NS260 N1467NS N1467NS200 
N1802NC120160Abstract: Repetitive dv/dt Standard dv/dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6.0 , snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below 
IXYS Original 

N1802NC120160 N1802NC120 N1802NC160 N1802NC140 
TO93 packageAbstract: RC snubber dc motor 30A/µs, Gate open circuit  20 µs Typ. Max. Units VT(TO) t(ON)TOT *Typical , % VDRM Tj = 125oC, Gate open circuit  200 V/µs Gate source 20V, 20 Repetitive 50Hz  , Total turnon time Tj = 25°C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A/µs, dIG/dt = 1A/µs 3 , 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7 Fig.7 Energy per pulse for sinusoidal pulses NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7 Fig.8 Maximum allowable peak onstate 
Dynex Original 

TO93 package RC snubber dc motor DK27 RC snubber ac motor 50A 1200V DS42694 DS42695 12FAK 12FAM 
DYNEXAbstract: FAST SWITCHING THYRISTOR , Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source , = 25°C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 125°C, IT = 200A, VR = 50V, tq code: A dV/dt = 200V/µs (Linear to 60% VDRM), dIR/dt = 30A/µs, Gate open circuit Repetitive 50Hz Nonrepetitive Min. 1.5* 3* Max. 1.85 25 200 500 800 1.2 1.0 70 20 , www.dynexsemi.com DK27.FA NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7 Fig 
Dynex Original 

DYNEX FAST SWITCHING THYRISTOR 
Abstract: Standard dv/dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber , snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of , current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at 
IXYS Original 

N1297NC200 N1297NC260 
Abstract: Standard dv/dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber , snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of , current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at 
IXYS Original 

N1449QL200 N1449QL220 NX306QL200220 VDRM/100 
N1114LC120Abstract: /dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber , apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 
IXYS Original 

N1114LC120 N1114LC180 N1114LC140 
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