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30a snubber circuit

Catalog Datasheet MFG & Type PDF Document Tags

G2000VC450

Abstract: GTO thyristor circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit , fixed by the snubber circuit time constant, which must be allowed to fully discharge before the GTO , snubber circuit. Voltage will continue to rise across DUT until Dc turns-on at a voltage set by the , ITGQM Maximum peak turn-off current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2 , A/µs Notes: 1) VGK-2Volts. 2) Tj=125°C, VD=67%VDM, VDM
Westcode Semiconductors
Original

G1500N

Abstract: over the normal operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS , GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time constant , across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT , Maximum controllable on-state current, (note 2) Snubber loop inductance, ITM=ITGQM, (note 2) Mean on-state
Westcode Semiconductors
Original

G2000VC250

Abstract: GTO thyristor curves are effective over the normal operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed , snubber circuit time constant, which must be allowed to fully discharge before the GTO thyristor is , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will , Cs DUT Vc Cd RCD snubber Diagram 10, Turn-off test circuit. The definitions of
Westcode Semiconductors
Original

GTO thyristor 1200V 100A

Abstract: 10A fast Gate Turn-off Thyristor operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls , will usually be fixed by the snubber circuit time constant, which must be allowed to fully discharge , Gatedrive DUT RCD snubber Diagram 10, Turn-off test circuit. The definitions of turn-off parameters , W kW A V µs µs °C °C 2 Peak turn-off current, (note 2) Snubber loop inductance, ITM=ITGQ, (note
Westcode Semiconductors
Original

Westcode Semiconductors

Abstract: H0500KC device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , minimum on-time will usually be fixed by the snubber circuit time constant, which must be allowed to , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will , DUT RCD snubber Diagram 10, Turn-off test circuit. The definitions of turn-off parameters used , Maximum peak turn-off current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2) 0.3 µH
Westcode Semiconductors
Original

H0700KC

Abstract: GTO thyristor 1200V 50A operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls , ) the actual minimum on-time will usually be fixed by the snubber circuit time constant, which must be , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will , Cd RCD snubber Diagram 10, Turn-off test circuit. The definitions of turn-off parameters used
Westcode Semiconductors
Original
Abstract: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls , minimum on-time will usually be fixed by the snubber circuit time constant, which must be allowed to , across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT , snubber Diagram 10, Turn-off test circuit. The definitions of turn-off parameters used in the Westcode Semiconductors
Original
Abstract: circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is , across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT , snubber Diagram 10, Turn-off test circuit. The definitions of turn-off parameters used in the , Maximum peak turn-off current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2) 0.3 , =50%VDRM, ITGQ=500A, IGM=30A, diG/dt=15A/µs µs - 0.5 - VGT IGT td Gate trigger voltage Westcode Semiconductors
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MKP-X2

Abstract: gas turbine ignition system Snubber Capacitors Variable terminations SnubberMKP/FKP W1UA MKP 0M7 2000-rao- GTO Capacitors , >300.000 h â  Highest du/dt Snubber 0.01 JUF-25/JF 250-4000VDC Variable contacts SHs- Em Snubber , >300.000 h â  High reliability against active or passive flammability (MP) Snubber Capacitors 0.01 /jF - 25/JF 250 - 4000 VDC Variable terminations H Snubber MKP/FKP Snubber MKP/FKP Snubber MKP/FKP â , Snubber Cap. O.OI/JF-25/JF 250-4000VDC Variable terminations WW* 10.047 I i Solito 2000-W? | Snubber MKP
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OCR Scan
MKP-X2 gas turbine ignition system PE 1000 MKP WIMA MKS 3 airbag control unit FKP1 2000-TOO- F-220/ 50-2000VDC

GTO 100A IXYS

Abstract: GTO thyristor snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland , fixed by the snubber circuit time constant, which must be allowed to fully discharge before the GTO , snubber circuit. Voltage will continue to rise across DUT until Dc turns-on at a voltage set by the , ITGQM Maximum peak turn-off current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2 , , re-applied voltage VD=VR10V. 5) IT=2000A repetitive, IGM=30A, diGM/dt=40A/µs, for higher di/dt please
Westcode Semiconductors
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GTO 100A IXYS GTO thyristor GTO thyristor 10A G3000TC 40A GTO thyristor anode gate thyristor G3000TC250 D-68623

SC454

Abstract: SC452 virtually eliminated Snubber SmartDriveTM Page 3 Semtech Confidential October, 2007 Semtech , thermal pad Page 5 Snubber SmartDriveTM Semtech Confidential October, 2007 IMVP6/6+ LV/ULV , # support · Use Rsense or DCR-sense · 32L MLP 5x5 · In Production Page 6 Snubber SmartDriveTM Semtech Confidential October, 2007 SC454 Application Schematic Snubber SmartDriveTM Page 7 , ­ Droop ­ Power Monitor Page 8 Snubber SmartDriveTM Semtech Confidential October, 2007
Semtech
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SC452 SC440 SC441 SC412A SC415 SC416 SC183 GPU board diagram SC189 SC560C

GTO thyristor Application notes

Abstract: S0500KC25 assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an , turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time constant, which must , across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT , W kW A V µs µs °C °C 2 Peak turn-off current, (note 2) Snubber loop inductance, ITM=ITGQ, (note , which the gate circuit is required to remain low impedance to allow for the passage of tail current
Westcode Semiconductors
Original
S0500KC25 GTO thyristor Application notes s0500
Abstract: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls , minimum on-time will usually be fixed by the snubber circuit time constant, which must be allowed to , across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT , snubber Diagram 10, Turn-off test circuit. The definitions of turn-off parameters used in the Westcode Semiconductors
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S0500KC25G

N1467NS

Abstract: N1467NS260 25°C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory , local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated
Westcode Semiconductors
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N1467NS260 N1467NS N1467NS200

N1802NC120-160

Abstract: Repetitive dv/dt Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6.0 , snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below
IXYS
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N1802NC120-160 N1802NC120 N1802NC160 N1802NC140

TO93 package

Abstract: RC snubber dc motor 30A/µs, Gate open circuit - 20 µs Typ. Max. Units VT(TO) t(ON)TOT *Typical , % VDRM Tj = 125oC, Gate open circuit - 200 V/µs Gate source 20V, 20 Repetitive 50Hz - , Total turn-on time Tj = 25°C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A/µs, dIG/dt = 1A/µs 3 , 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7 Fig.7 Energy per pulse for sinusoidal pulses NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7 Fig.8 Maximum allowable peak on-state
Dynex
Original
TO93 package RC snubber dc motor DK27 RC snubber ac motor 50A 1200V DS4269-4 DS4269-5 12FAK 12FAM

DYNEX

Abstract: FAST SWITCHING THYRISTOR , Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source , = 25°C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 125°C, IT = 200A, VR = 50V, tq code: A dV/dt = 200V/µs (Linear to 60% VDRM), dIR/dt = 30A/µs, Gate open circuit Repetitive 50Hz Non-repetitive Min. 1.5* 3* Max. 1.85 25 200 500 800 1.2 1.0 70 20 , www.dynexsemi.com DK27.FA NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7 Fig
Dynex
Original
DYNEX FAST SWITCHING THYRISTOR
Abstract: Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber , snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of , current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at IXYS
Original
N1297NC200 N1297NC260
Abstract: Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber , snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of , current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at IXYS
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N1449QL200 N1449QL220 NX306QL200-220 VDRM/100

N1114LC120

Abstract: /dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber , apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
IXYS
Original
N1114LC120 N1114LC180 N1114LC140
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